Taiwan Semiconductor агент по продажам - Диоды - Мостовые выпрямители - GBPC1504 T0G GBPC1504M T0G - ICCHIP

номер части	Производитель / Марка	Краткое описание	Статус детали	Тип диода	Технологии	Напряжение - Реверс пика (макс.)	Текущий - средний отрегулированный (Io)	Напряжение - Вперед (Vf) (Макс.) @ Если	Текущий - обратный утечек @ Vr	Рабочая Температура	Тип монтажа	Упаковка / чехол	Пакет устройств поставщика
GBPC1504 T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 400V 15A GBPC	в производстве	Single Phase	Standard	400V	15A	1.1V @ 7.5A	5µA @ 400V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, GBPC	GBPC
GBPC1504M T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 400V 15A GBPC-M	в производстве	Single Phase	Standard	400V	15A	1.1V @ 7.5A	5µA @ 400V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, GBPC-M	GBPC-M
GBPC1504W T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 400V 15A GBPC-W	в производстве	Single Phase	Standard	400V	15A	1.1V @ 7.5A	5µA @ 400V	-55°C ~ 150°C (TJ)	Through Hole	4-Square, GBPC-W	GBPC-W
GBPC25005 T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 50V 25A GBPC	в производстве	Single Phase	Standard	50V	25A	1.1V @ 12.5A	5µA @ 50V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, GBPC	GBPC
GBPC25005M T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 50V 25A GBPC-M	в производстве	Single Phase	Standard	50V	25A	1.1V @ 12.5A	5µA @ 50V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, GBPC-M	GBPC-M
GBPC25005W T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 50V 25A GBPC-W	в производстве	Single Phase	Standard	50V	25A	1.1V @ 12.5A	5µA @ 50V	-55°C ~ 150°C (TJ)	Through Hole	4-Square, GBPC-W	GBPC-W
GBPC1506 T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 600V 15A GBPC	в производстве	Single Phase	Standard	600V	15A	1.1V @ 7.5A	5µA @ 600V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, GBPC	GBPC
GBPC1506M T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 600V 15A GBPC-M	в производстве	Single Phase	Standard	600V	15A	1.1V @ 7.5A	5µA @ 600V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, GBPC-M	GBPC-M
GBPC1506W T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 600V 15A GBPC-W	в производстве	Single Phase	Standard	600V	15A	1.1V @ 7.5A	5µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-Square, GBPC-W	GBPC-W
GBPC2501 T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 100V 25A GBPC	в производстве	Single Phase	Standard	100V	25A	1.1V @ 12.5A	5µA @ 100V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, GBPC	GBPC
GBPC2501M T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 100V 25A GBPC-M	в производстве	Single Phase	Standard	100V	25A	1.1V @ 12.5A	5µA @ 100V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, GBPC-M	GBPC-M
GBPC2501W T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 100V 25A GBPC-W	в производстве	Single Phase	Standard	100V	25A	1.1V @ 12.5A	5µA @ 100V	-55°C ~ 150°C (TJ)	Through Hole	4-Square, GBPC-W	GBPC-W
GBPC2502 T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 200V 25A GBPC	в производстве	Single Phase	Standard	200V	25A	1.1V @ 12.5A	5µA @ 200V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, GBPC	GBPC
GBPC2502M T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 200V 25A GBPC-M	в производстве	Single Phase	Standard	200V	25A	1.1V @ 12.5A	5µA @ 200V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, GBPC-M	GBPC-M
GBPC2502W T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 200V 25A GBPC-W	в производстве	Single Phase	Standard	200V	25A	1.1V @ 12.5A	5µA @ 200V	-55°C ~ 150°C (TJ)	Through Hole	4-Square, GBPC-W	GBPC-W
GBPC1508 T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 800V 15A GBPC	в производстве	Single Phase	Standard	800V	15A	1.1V @ 7.5A	5µA @ 800V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, GBPC	GBPC
GBPC1508M T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 800V 15A GBPC-M	в производстве	Single Phase	Standard	800V	15A	1.1V @ 7.5A	5µA @ 800V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, GBPC-M	GBPC-M
GBPC1508W T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 800V 15A GBPC-W	в производстве	Single Phase	Standard	800V	15A	1.1V @ 7.5A	5µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-Square, GBPC-W	GBPC-W
GBPC1510 T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 1KV 15A GBPC	в производстве	Single Phase	Standard	1kV	15A	1.1V @ 7.5A	5µA @ 1000V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, GBPC	GBPC
GBPC1510M T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 1KV 15A GBPC-M	в производстве	Single Phase	Standard	1kV	15A	1.1V @ 7.5A	5µA @ 1000V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, GBPC-M	GBPC-M
GBPC1510W T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 1KV 15A GBPC-W	в производстве	Single Phase	Standard	1kV	15A	1.1V @ 7.5A	5µA @ 1000V	-55°C ~ 150°C (TJ)	Through Hole	4-Square, GBPC-W	GBPC-W
GBPC2504 T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 400V 25A GBPC	в производстве	Single Phase	Standard	400V	25A	1.1V @ 12.5A	5µA @ 400V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, GBPC	GBPC
GBPC2504M T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 400V 25A GBPC-M	в производстве	Single Phase	Standard	400V	25A	1.1V @ 12.5A	5µA @ 400V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, GBPC-M	GBPC-M
GBPC2504W T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 400V 25A GBPC-W	в производстве	Single Phase	Standard	400V	25A	1.1V @ 12.5A	5µA @ 400V	-55°C ~ 150°C (TJ)	Through Hole	4-Square, GBPC-W	GBPC-W
GBPC2506 T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 600V 25A GBPC	в производстве	Single Phase	Standard	600V	25A	1.1V @ 12.5A	5µA @ 600V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, GBPC	GBPC
GBPC2506M T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 600V 25A GBPC-M	в производстве	Single Phase	Standard	600V	25A	1.1V @ 12.5A	5µA @ 600V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, GBPC-M	GBPC-M
GBPC2506W T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 600V 25A GBPC-W	в производстве	Single Phase	Standard	600V	25A	1.1V @ 12.5A	5µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-Square, GBPC-W	GBPC-W
GBPC2508 T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 800V 25A GBPC	в производстве	Single Phase	Standard	800V	25A	1.1V @ 12.5A	5µA @ 800V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, GBPC	GBPC
GBPC2508M T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 800V 25A GBPC-M	в производстве	Single Phase	Standard	800V	25A	1.1V @ 12.5A	5µA @ 800V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, GBPC-M	GBPC-M
GBPC2508W T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 800V 25A GBPC-W	в производстве	Single Phase	Standard	800V	25A	1.1V @ 12.5A	5µA @ 800V	-55°C ~ 150°C (TJ)	Through Hole	4-Square, GBPC-W	GBPC-W
GBPC2510 T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 1KV 25A GBPC	в производстве	Single Phase	Standard	1kV	25A	1.1V @ 12.5A	5µA @ 1000V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, GBPC	GBPC
GBPC2510M T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 1KV 25A GBPC-M	в производстве	Single Phase	Standard	1kV	25A	1.1V @ 12.5A	5µA @ 1000V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, GBPC-M	GBPC-M
GBPC2510W T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 1KV 25A GBPC-W	в производстве	Single Phase	Standard	1kV	25A	1.1V @ 12.5A	5µA @ 1000V	-55°C ~ 150°C (TJ)	Through Hole	4-Square, GBPC-W	GBPC-W
GBPC35005 T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 50V 35A GBPC	в производстве	Single Phase	Standard	50V	35A	1.1V @ 17.5A	5µA @ 50V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, GBPC	GBPC
GBPC35005M T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 50V 35A GBPC-M	в производстве	Single Phase	Standard	50V	35A	1.1V @ 17.5A	5µA @ 50V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, GBPC-M	GBPC-M
GBPC35005W T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 50V 35A GBPC-W	в производстве	Single Phase	Standard	50V	35A	1.1V @ 17.5A	5µA @ 50V	-55°C ~ 150°C (TJ)	Through Hole	4-Square, GBPC-W	GBPC-W
GBPC3501 T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 100V 35A GBPC	в производстве	Single Phase	Standard	100V	35A	1.1V @ 17.5A	5µA @ 100V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, GBPC	GBPC
GBPC3501M T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 100V 35A GBPC-M	в производстве	Single Phase	Standard	100V	35A	1.1V @ 17.5A	5µA @ 100V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, GBPC-M	GBPC-M
GBPC3501W T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 100V 35A GBPC-W	в производстве	Single Phase	Standard	100V	35A	1.1V @ 17.5A	5µA @ 100V	-55°C ~ 150°C (TJ)	Through Hole	4-Square, GBPC-W	GBPC-W
GBPC3502 T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 200V 35A GBPC	в производстве	Single Phase	Standard	200V	35A	1.1V @ 17.5A	5µA @ 200V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, GBPC	GBPC
GBPC3502M T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 200V 35A GBPC-M	в производстве	Single Phase	Standard	200V	35A	1.1V @ 17.5A	5µA @ 200V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, GBPC-M	GBPC-M
GBPC3502W T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 200V 35A GBPC-W	в производстве	Single Phase	Standard	200V	35A	1.1V @ 17.5A	5µA @ 200V	-55°C ~ 150°C (TJ)	Through Hole	4-Square, GBPC-W	GBPC-W
GBPC3504 T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 400V 35A GBPC	в производстве	Single Phase	Standard	400V	35A	1.1V @ 17.5A	5µA @ 400V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, GBPC	GBPC
GBPC3504M T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 400V 35A GBPC-M	в производстве	Single Phase	Standard	400V	35A	1.1V @ 17.5A	5µA @ 400V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, GBPC-M	GBPC-M
GBPC3504W T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 400V 35A GBPC-W	в производстве	Single Phase	Standard	400V	35A	1.1V @ 17.5A	5µA @ 400V	-55°C ~ 150°C (TJ)	Through Hole	4-Square, GBPC-W	GBPC-W
GBPC3506 T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 600V 35A GBPC	в производстве	Single Phase	Standard	600V	35A	1.1V @ 17.5A	5µA @ 600V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, GBPC	GBPC
GBPC3506M T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 600V 35A GBPC-M	в производстве	Single Phase	Standard	600V	35A	1.1V @ 17.5A	5µA @ 600V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, GBPC-M	GBPC-M
GBPC3506W T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 600V 35A GBPC-W	в производстве	Single Phase	Standard	600V	35A	1.1V @ 17.5A	5µA @ 600V	-55°C ~ 150°C (TJ)	Through Hole	4-Square, GBPC-W	GBPC-W
GBPC3508 T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1PHASE 800V 35A GBPC	в производстве	Single Phase	Standard	800V	35A	1.1V @ 17.5A	5µA @ 800V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, GBPC	GBPC
GBPC3508M T0G	Taiwan Semiconductor Corporation	BRIDGE RECT 1P 800V 35A GBPC-M	в производстве	Single Phase	Standard	800V	35A	1.1V @ 17.5A	5µA @ 800V	-55°C ~ 150°C (TJ)	QC Terminal	4-Square, GBPC-M	GBPC-M

Производители для Диоды - Мостовые выпрямители