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Taiwan Semiconductor Corporation |
DIODE 10V 500MW DO35 |
в производстве | 10V | ±2% | 500mW | 20 Ohms | 7mA @ 200mV | 1.5V @ 100mA | -55°C ~ 175°C (TJ) | Through Hole | DO-204AH, DO-35, Axial | DO-35 |
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Taiwan Semiconductor Corporation |
DIODE 11V 500MW DO35 |
в производстве | 11V | ±2% | 500mW | 20 Ohms | 8mA @ 100mV | 1.5V @ 100mA | -55°C ~ 175°C (TJ) | Through Hole | DO-204AH, DO-35, Axial | DO-35 |
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Taiwan Semiconductor Corporation |
DIODE 12V 500MW DO35 |
в производстве | 12V | ±2% | 500mW | 25 Ohms | 8mA @ 100mV | 1.5V @ 100mA | -55°C ~ 175°C (TJ) | Through Hole | DO-204AH, DO-35, Axial | DO-35 |
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Taiwan Semiconductor Corporation |
DIODE 13V 500MW DO35 |
в производстве | 13V | ±2% | 500mW | 30 Ohms | 8mA @ 100mV | 1.5V @ 100mA | -55°C ~ 175°C (TJ) | Through Hole | DO-204AH, DO-35, Axial | DO-35 |
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Taiwan Semiconductor Corporation |
DIODE 15V 500MW DO35 |
в производстве | 15V | ±2% | 500mW | 30 Ohms | 10.5mA @ 50mV | 1.5V @ 100mA | -55°C ~ 175°C (TJ) | Through Hole | DO-204AH, DO-35, Axial | DO-35 |
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Taiwan Semiconductor Corporation |
DIODE 18V 500MW DO35 |
в производстве | 18V | ±2% | 500mW | 45 Ohms | 12.6mA @ 50mV | 1.5V @ 100mA | -55°C ~ 175°C (TJ) | Through Hole | DO-204AH, DO-35, Axial | DO-35 |
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Taiwan Semiconductor Corporation |
DIODE 20V 500MW DO35 |
в производстве | 20V | ±2% | 500mW | 55 Ohms | 14mA @ 50mV | 1.5V @ 100mA | -55°C ~ 175°C (TJ) | Through Hole | DO-204AH, DO-35, Axial | DO-35 |
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Taiwan Semiconductor Corporation |
DIODE 24V 500MW DO35 |
в производстве | 24V | ±2% | 500mW | 70 Ohms | 16.8mA @ 50mV | 1.5V @ 100mA | -55°C ~ 175°C (TJ) | Through Hole | DO-204AH, DO-35, Axial | DO-35 |
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Taiwan Semiconductor Corporation |
DIODE 27V 500MW DO35 |
в производстве | 27V | ±2% | 500mW | 80 Ohms | 18.9mA @ 50mV | 1.5V @ 100mA | -55°C ~ 175°C (TJ) | Through Hole | DO-204AH, DO-35, Axial | DO-35 |
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Taiwan Semiconductor Corporation |
DIODE 3.6V 500MW DO35 |
в производстве | 3.6V | ±2% | 500mW | 90 Ohms | 1mA @ 15V | 1.5V @ 100mA | -55°C ~ 175°C (TJ) | Through Hole | DO-204AH, DO-35, Axial | DO-35 |
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Taiwan Semiconductor Corporation |
DIODE 3.9V 500MW DO35 |
в производстве | 3.9V | ±2% | 500mW | 90 Ohms | 1mA @ 10V | 1.5V @ 100mA | -55°C ~ 175°C (TJ) | Through Hole | DO-204AH, DO-35, Axial | DO-35 |
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Taiwan Semiconductor Corporation |
DIODE 43V 500MW DO35 |
в производстве | 43V | ±2% | 500mW | 150 Ohms | 30.1mA @ 50mV | 1.5V @ 100mA | -55°C ~ 175°C (TJ) | Through Hole | DO-204AH, DO-35, Axial | DO-35 |
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Taiwan Semiconductor Corporation |
DIODE 47V 500MW DO35 |
в производстве | 47V | ±2% | 500mW | 170 Ohms | 32.9mA @ 50mV | 1.5V @ 100mA | -55°C ~ 175°C (TJ) | Through Hole | DO-204AH, DO-35, Axial | DO-35 |
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Taiwan Semiconductor Corporation |
DIODE 4.3V 500MW DO35 |
в производстве | 4.3V | ±2% | 500mW | 90 Ohms | 1mA @ 5V | 1.5V @ 100mA | -55°C ~ 175°C (TJ) | Through Hole | DO-204AH, DO-35, Axial | DO-35 |
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Taiwan Semiconductor Corporation |
DIODE 4.7V 500MW DO35 |
в производстве | 4.7V | ±2% | 500mW | 80 Ohms | 2mA @ 3V | 1.5V @ 100mA | -55°C ~ 175°C (TJ) | Through Hole | DO-204AH, DO-35, Axial | DO-35 |
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Taiwan Semiconductor Corporation |
DIODE 51V 500MW DO35 |
в производстве | 51V | ±2% | 500mW | 180 Ohms | 35.7mA @ 50mV | 1.5V @ 100mA | -55°C ~ 175°C (TJ) | Through Hole | DO-204AH, DO-35, Axial | DO-35 |
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Taiwan Semiconductor Corporation |
DIODE 56V 500MW DO35 |
в производстве | 56V | ±2% | 500mW | 200 Ohms | 39.2mA @ 50mV | 1.5V @ 100mA | -55°C ~ 175°C (TJ) | Through Hole | DO-204AH, DO-35, Axial | DO-35 |
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Taiwan Semiconductor Corporation |
DIODE 5.1V 500MW DO35 |
в производстве | 5.1V | ±2% | 500mW | 60 Ohms | 2mA @ 2V | 1.5V @ 100mA | -55°C ~ 175°C (TJ) | Through Hole | DO-204AH, DO-35, Axial | DO-35 |
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Taiwan Semiconductor Corporation |
DIODE 5.6V 500MW DO35 |
в производстве | 5.6V | ±2% | 500mW | 40 Ohms | 2mA @ 1V | 1.5V @ 100mA | -55°C ~ 175°C (TJ) | Through Hole | DO-204AH, DO-35, Axial | DO-35 |
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Taiwan Semiconductor Corporation |
DIODE 62V 500MW DO35 |
в производстве | 62V | ±2% | 500mW | 215 Ohms | 43.4mA @ 50mV | 1.5V @ 100mA | -55°C ~ 175°C (TJ) | Through Hole | DO-204AH, DO-35, Axial | DO-35 |
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Taiwan Semiconductor Corporation |
DIODE 68V 500MW DO35 |
в производстве | 68V | ±2% | 500mW | 240 Ohms | 47.6mA @ 50mV | 1.5V @ 100mA | -55°C ~ 175°C (TJ) | Through Hole | DO-204AH, DO-35, Axial | DO-35 |
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Taiwan Semiconductor Corporation |
DIODE 6.2V 500MW DO35 |
в производстве | 6.2V | ±2% | 500mW | 10 Ohms | 4mA @ 3V | 1.5V @ 100mA | -55°C ~ 175°C (TJ) | Through Hole | DO-204AH, DO-35, Axial | DO-35 |
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Taiwan Semiconductor Corporation |
DIODE 6.8V 500MW DO35 |
в производстве | 6.8V | ±2% | 500mW | 15 Ohms | 4mA @ 2V | 1.5V @ 100mA | -55°C ~ 175°C (TJ) | Through Hole | DO-204AH, DO-35, Axial | DO-35 |
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Taiwan Semiconductor Corporation |
DIODE 75V 500MW DO35 |
в производстве | 75V | ±2% | 500mW | 255 Ohms | 52.5mA @ 50mV | 1.5V @ 100mA | -55°C ~ 175°C (TJ) | Through Hole | DO-204AH, DO-35, Axial | DO-35 |
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Taiwan Semiconductor Corporation |
DIODE 7.5V 500MW DO35 |
в производстве | 7.5V | ±2% | 500mW | 15 Ohms | 5mA @ 1V | 1.5V @ 100mA | -55°C ~ 175°C (TJ) | Through Hole | DO-204AH, DO-35, Axial | DO-35 |
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Taiwan Semiconductor Corporation |
DIODE 8.2V 500MW DO35 |
в производстве | 8.2V | ±2% | 500mW | 15 Ohms | 5mA @ 700mV | 1.5V @ 100mA | -55°C ~ 175°C (TJ) | Through Hole | DO-204AH, DO-35, Axial | DO-35 |
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Taiwan Semiconductor Corporation |
DIODE 9.1V 500MW DO35 |
в производстве | 9.1V | ±2% | 500mW | 15 Ohms | 6mA @ 500mV | 1.5V @ 100mA | -55°C ~ 175°C (TJ) | Through Hole | DO-204AH, DO-35, Axial | DO-35 |
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Taiwan Semiconductor Corporation |
DIODE 10V 500MW MINI MELF |
в производстве | 10V | ±5% | 500mW | 15 Ohms | 100nA @ 7.5V | 1V @ 10mA | -65°C ~ 175°C (TJ) | SMD Поверхностный монтаж | DO-213AC, MINI-MELF, SOD-80 | Mini MELF |
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Taiwan Semiconductor Corporation |
DIODE 11V 500MW MINI MELF |
в производстве | 11V | ±5% | 500mW | 20 Ohms | 100nA @ 8.2V | 1V @ 10mA | -65°C ~ 175°C (TJ) | SMD Поверхностный монтаж | DO-213AC, MINI-MELF, SOD-80 | Mini MELF |
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Taiwan Semiconductor Corporation |
DIODE 12V 500MW MINI MELF |
в производстве | 12V | ±5% | 500mW | 20 Ohms | 100nA @ 9.1V | 1V @ 10mA | -65°C ~ 175°C (TJ) | SMD Поверхностный монтаж | DO-213AC, MINI-MELF, SOD-80 | Mini MELF |
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Taiwan Semiconductor Corporation |
DIODE 13V 500MW MINI MELF |
в производстве | 13V | ±5% | 500mW | 26 Ohms | 100nA @ 10V | 1V @ 10mA | -65°C ~ 175°C (TJ) | SMD Поверхностный монтаж | DO-213AC, MINI-MELF, SOD-80 | Mini MELF |
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Taiwan Semiconductor Corporation |
DIODE 15V 500MW MINI MELF |
в производстве | 15V | ±5% | 500mW | 30 Ohms | 100nA @ 11V | 1V @ 10mA | -65°C ~ 175°C (TJ) | SMD Поверхностный монтаж | DO-213AC, MINI-MELF, SOD-80 | Mini MELF |
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Taiwan Semiconductor Corporation |
DIODE 16V 500MW MINI MELF |
в производстве | 16V | ±5% | 500mW | 40 Ohms | 100nA @ 12V | 1V @ 10mA | -65°C ~ 175°C (TJ) | SMD Поверхностный монтаж | DO-213AC, MINI-MELF, SOD-80 | Mini MELF |
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Taiwan Semiconductor Corporation |
DIODE 18V 500MW MINI MELF |
в производстве | 18V | ±5% | 500mW | 50 Ohms | 100nA @ 13V | 1V @ 10mA | -65°C ~ 175°C (TJ) | SMD Поверхностный монтаж | DO-213AC, MINI-MELF, SOD-80 | Mini MELF |
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Taiwan Semiconductor Corporation |
DIODE 20V 500MW MINI MELF |
в производстве | 20V | ±5% | 500mW | 55 Ohms | 100nA @ 15V | 1V @ 10mA | -65°C ~ 175°C (TJ) | SMD Поверхностный монтаж | DO-213AC, MINI-MELF, SOD-80 | Mini MELF |
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Taiwan Semiconductor Corporation |
DIODE 22V 500MW MINI MELF |
в производстве | 22V | ±5% | 500mW | 55 Ohms | 100nA @ 16V | 1V @ 10mA | -65°C ~ 175°C (TJ) | SMD Поверхностный монтаж | DO-213AC, MINI-MELF, SOD-80 | Mini MELF |
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Taiwan Semiconductor Corporation |
DIODE 24V 500MW MINI MELF |
в производстве | 24V | ±5% | 500mW | 80 Ohms | 100nA @ 18V | 1V @ 10mA | -65°C ~ 175°C (TJ) | SMD Поверхностный монтаж | DO-213AC, MINI-MELF, SOD-80 | Mini MELF |
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Taiwan Semiconductor Corporation |
DIODE 27V 500MW MINI MELF |
в производстве | 27V | ±5% | 500mW | 80 Ohms | 100nA @ 20V | 1V @ 10mA | -65°C ~ 175°C (TJ) | SMD Поверхностный монтаж | DO-213AC, MINI-MELF, SOD-80 | Mini MELF |
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Taiwan Semiconductor Corporation |
DIODE 2.4V 500MW MINI MELF |
в производстве | 2.4V | ±5% | 500mW | 85 Ohms | 50µA @ 1V | 1V @ 10mA | -65°C ~ 175°C (TJ) | SMD Поверхностный монтаж | DO-213AC, MINI-MELF, SOD-80 | Mini MELF |
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Taiwan Semiconductor Corporation |
DIODE 2.7V 500MW MINI MELF |
в производстве | 2.7V | ±5% | 500mW | 85 Ohms | 10µA @ 1V | 1V @ 10mA | -65°C ~ 175°C (TJ) | SMD Поверхностный монтаж | DO-213AC, MINI-MELF, SOD-80 | Mini MELF |
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Taiwan Semiconductor Corporation |
DIODE 30V 500MW MINI MELF |
в производстве | 30V | ±5% | 500mW | 80 Ohms | 100nA @ 22V | 1V @ 10mA | -65°C ~ 175°C (TJ) | SMD Поверхностный монтаж | DO-213AC, MINI-MELF, SOD-80 | Mini MELF |
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Taiwan Semiconductor Corporation |
DIODE 33V 500MW MINI MELF |
в производстве | 33V | ±5% | 500mW | 80 Ohms | 100nA @ 24V | 1V @ 10mA | -65°C ~ 175°C (TJ) | SMD Поверхностный монтаж | DO-213AC, MINI-MELF, SOD-80 | Mini MELF |
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Taiwan Semiconductor Corporation |
DIODE 36V 500MW MINI MELF |
в производстве | 36V | ±5% | 500mW | 80 Ohms | 100nA @ 27V | 1V @ 10mA | -65°C ~ 175°C (TJ) | SMD Поверхностный монтаж | DO-213AC, MINI-MELF, SOD-80 | Mini MELF |
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Taiwan Semiconductor Corporation |
DIODE 39V 500MW MINI MELF |
в производстве | 39V | ±5% | 500mW | 90 Ohms | 100nA @ 28V | 1V @ 10mA | -65°C ~ 175°C (TJ) | SMD Поверхностный монтаж | DO-213AC, MINI-MELF, SOD-80 | Mini MELF |
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Taiwan Semiconductor Corporation |
DIODE 3V 500MW MINI MELF |
в производстве | 3V | ±5% | 500mW | 85 Ohms | 4µA @ 1V | 1V @ 10mA | -65°C ~ 175°C (TJ) | SMD Поверхностный монтаж | DO-213AC, MINI-MELF, SOD-80 | Mini MELF |
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Taiwan Semiconductor Corporation |
DIODE 3.3V 500MW MINI MELF |
в производстве | 3.3V | ±5% | 500mW | 85 Ohms | 2µA @ 1V | 1V @ 10mA | -65°C ~ 175°C (TJ) | SMD Поверхностный монтаж | DO-213AC, MINI-MELF, SOD-80 | Mini MELF |
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Taiwan Semiconductor Corporation |
DIODE 3.6V 500MW MINI MELF |
в производстве | 3.6V | ±5% | 500mW | 85 Ohms | 2µA @ 1V | 1V @ 10mA | -65°C ~ 175°C (TJ) | SMD Поверхностный монтаж | DO-213AC, MINI-MELF, SOD-80 | Mini MELF |
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Taiwan Semiconductor Corporation |
DIODE 3.9V 500MW MINI MELF |
в производстве | 3.9V | ±5% | 500mW | 85 Ohms | 2µA @ 1V | 1V @ 10mA | -65°C ~ 175°C (TJ) | SMD Поверхностный монтаж | DO-213AC, MINI-MELF, SOD-80 | Mini MELF |
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Taiwan Semiconductor Corporation |
DIODE 43V 500MW MINI MELF |
в производстве | 43V | ±5% | 500mW | 90 Ohms | 100nA @ 32V | 1V @ 10mA | -65°C ~ 175°C (TJ) | SMD Поверхностный монтаж | DO-213AC, MINI-MELF, SOD-80 | Mini MELF |
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Taiwan Semiconductor Corporation |
DIODE 47V 500MW MINI MELF |
в производстве | 47V | ±5% | 500mW | 110 Ohms | 100nA @ 35V | 1V @ 10mA | -65°C ~ 175°C (TJ) | SMD Поверхностный монтаж | DO-213AC, MINI-MELF, SOD-80 | Mini MELF |
