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Производители для Оптоизоляторы - транзистор, фотогальванический выход

Broadcom Limited
CEL (California Eastern Laboratories)
Everlight Electronics
Infineon Technologies
Isocom
IXYS Integrated Circuits Division
Lite-On, Inc.
Lumex, Inc.
ON Semiconductor
Panasonic
QT Brightek
Renesas Electronics America
Sharp Microelectronics
Skyworks Solutions, Inc.
Socle Technology Corporation
Standex-Meder Electronics
Taiwan Semiconductor
Toshiba Semiconductor and Storage
TT Electronics/Optek Technology
Vishay
Weidmüller
номер части Производитель / Марка Краткое описание Статус деталиКоличество каналовНапряжение - изоляцияКоэффициент передачи в реальном времени (мин.)Коэффициент передачи тока (макс.)Время включения / выключения (Тип)Время нарастания / падения (Тип)Тип вводаТип выходаНапряжение - выход (макс.)Текущий - выход / каналНапряжение - Вперед (Vf) (Тип)Current - DC Forward (If) (Max)Vce Saturation (Макс.)Рабочая ТемператураТип монтажаУпаковка / чехолПакет устройств поставщика
TLP331(F)
 Toshiba Semiconductor and Storage OPTOISO 5KV TRANSISTOR W/BASE 6DIP в производстве15000Vrms100% @ 1mA1200% @ 1mA10µs, 8µs8µs, 8µsDCTransistor with Base55V50mA1.15V50mA400mV-55°C ~ 100°CThrough Hole6-DIP (0.300", 7.62mm)6-DIP
TLP292-4(GB-TP,E
 Toshiba Semiconductor and Storage OPTOISOLATOR 3.75KV TRANSISTOR SO16 в производстве43750Vrms100% @ 5mA600% @ 5mA3µs, 3µs2µs, 3µsAC, DCTransistor80V50mA1.25V50mA300mV-55°C ~ 125°CSMD Поверхностный монтаж16-SOIC (0.179", 4.55mm Width)16-SO
TLP109(IGM-TPR,E
 Toshiba Semiconductor and Storage OPTOISO 3.75KV TRANSISTOR 6-SO 5 LEAD в производстве13750Vrms25% @ 10mA75% @ 10mA450ns, 450ns
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DCTransistor20V8mA1.64V20mA
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-55°C ~ 125°CSMD Поверхностный монтаж6-SOIC (0.179", 4.55mm Width), 5 Leads6-SO, 5 Lead
TLP559(F)
 Toshiba Semiconductor and Storage OPTOISOLATOR 2.5KV TRANSISTOR 8-DIP в производстве12500Vrms20% @ 16mA
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200ns, 300ns
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DCTransistor15V8mA1.65V25mA
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-55°C ~ 100°CThrough Hole8-DIP (0.300", 7.62mm)8-DIP
TLP559(IGM,F)
 Toshiba Semiconductor and Storage OPTOISOLATOR 2.5KV TRANSISTOR 8-DIP в производстве12500Vrms25% @ 10mA75% @ 10mA450ns, 450ns
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DCTransistor20V8mA1.65V25mA
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-55°C ~ 100°CThrough Hole8-DIP (0.300", 7.62mm)8-DIP
TLP620-4(F)
 Toshiba Semiconductor and Storage OPTOISOLTR 5KV 4CH TRANSISTOR 16-DIP в производстве45000Vrms50% @ 5mA600% @ 5mA3µs, 3µs2µs, 3µsAC, DCTransistor55V50mA1.15V50mA400mV-55°C ~ 100°CThrough Hole16-DIP (0.300", 7.62mm)16-DIP
TLP191B(U,C,F)
 Toshiba Semiconductor and Storage OPTOISOLTR 2.5KV PHVOLT 6-MFSOP в производстве12500Vrms
-
-
200µs, 3ms
-
DCPhotovoltaic8V24µA1.4V50mA
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-40°C ~ 80°CSMD Поверхностный монтаж6-SMD (4 Leads), Gull Wing6-MFSOP, 4 Lead
TLP185(GB-TPR,E)
 Toshiba Semiconductor and Storage OPTOISO 3.75KV TRANSISTOR 6-SO 4 LEAD в производстве13750Vrms100% @ 5mA400% @ 5mA9µs, 9µs5µs, 9µsDCTransistor80V50mA1.25V50mA300mV-55°C ~ 110°CSMD Поверхностный монтаж6-SOIC (0.179", 4.55mm Width), 4 Leads6-SO, 4 Lead
TLP185(GR-TPR,E)
 Toshiba Semiconductor and Storage OPTOISO 3.75KV TRANSISTOR 6-SO 4 LEAD в производстве13750Vrms100% @ 5mA300% @ 5mA9µs, 9µs5µs, 9µsDCTransistor80V50mA1.25V50mA300mV-55°C ~ 110°CSMD Поверхностный монтаж6-SOIC (0.179", 4.55mm Width), 4 Leads6-SO, 4 Lead
TLP183(GR-TPL,E
 Toshiba Semiconductor and Storage OPTOISO 3.75KV TRANSISTOR 6-SO 4 LEAD в производстве13750Vrms100% @ 5mA300% @ 5mA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.25V50mA300mV-55°C ~ 125°CSMD Поверхностный монтаж6-SOIC (0.179", 4.55mm Width), 4 Leads6-SO, 4 Lead
TLP293(GB-TPL,E
 Toshiba Semiconductor and Storage OPTOISOLATOR 3.75KV TRANSISTOR 4-SO в производстве13750Vrms100% @ 5mA600% @ 5mA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.25V50mA300mV-55°C ~ 125°CSMD Поверхностный монтаж4-SOIC (0.179", 4.55mm Width)4-SO
TLP293(GR-TPL,E
 Toshiba Semiconductor and Storage OPTOISOLATOR 3.75KV TRANSISTOR 4-SO в производстве13750Vrms100% @ 5mA300% @ 5mA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.25V50mA300mV-55°C ~ 125°CSMD Поверхностный монтаж4-SOIC (0.179", 4.55mm Width)4-SO
TLP187(TPL,E
 Toshiba Semiconductor and Storage OPTOISO 3.75KV DARL 6-SO 4 LEAD в производстве13750Vrms1000% @ 1mA
-
50µs, 15µs40µs, 15µsDCDarlington300V150mA1.25V50mA1.2V-55°C ~ 110°CSMD Поверхностный монтаж6-SOIC (0.179", 4.55mm Width), 4 Leads6-SO, 4 Lead
TLP291-4(TP,E)
 Toshiba Semiconductor and Storage OPTOISOLTR 2.5KV 4CH TRANSISTOR 16-SO в производстве42500Vrms50% @ 5mA400% @ 5mA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.2V50mA400mV-55°C ~ 110°CSMD Поверхностный монтаж16-SOIC (0.179", 4.55mm Width)16-SO
TLP291-4(GB-TP,E)
 Toshiba Semiconductor and Storage OPTOISOLTR 2.5KV 4CH TRANSISTOR 16-SO в производстве42500Vrms100% @ 5mA400% @ 5mA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.2V50mA400mV-55°C ~ 110°CSMD Поверхностный монтаж16-SOIC (0.179", 4.55mm Width)16-SO
TLP293-4(LGBTP,E
 Toshiba Semiconductor and Storage OPTOISOLATOR 3.75KV TRANSISTOR SO16 в производстве43750Vrms100% @ 500µA600% @ 500µA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.25V50mA300mV-55°C ~ 125°CSMD Поверхностный монтаж16-SOIC (0.179", 4.55mm Width)16-SO
TLP291(BL-TP,SE
 Toshiba Semiconductor and Storage OPTOISOLATOR 3.75KV TRANSISTOR 4-SO в производстве13750Vrms200% @ 5mA600% @ 5mA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.25V50mA300mV-55°C ~ 110°CSMD Поверхностный монтаж4-SOIC (0.179", 4.55mm Width)4-SO
TLP291(GB-TP,SE
 Toshiba Semiconductor and Storage OPTOISOLATOR 3.75KV TRANSISTOR 4-SO в производстве13750Vrms100% @ 5mA600% @ 5mA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.25V50mA300mV-55°C ~ 110°CSMD Поверхностный монтаж4-SOIC (0.179", 4.55mm Width)4-SO
TLP291(Y-TP,SE
 Toshiba Semiconductor and Storage OPTOISOLATOR 3.75KV TRANSISTOR 4-SO в производстве13750Vrms50% @ 5mA150% @ 5mA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.25V50mA300mV-55°C ~ 110°CSMD Поверхностный монтаж4-SOIC (0.179", 4.55mm Width)4-SO
TLP185(GRH-TL,SE
 Toshiba Semiconductor and Storage OPTOISO 3.75KV TRANSISTOR 6-SO 4 LEAD в производстве13750Vrms150% @ 5mA300% @ 5mA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.25V50mA300mV-55°C ~ 110°CSMD Поверхностный монтаж6-SOIC (0.179", 4.55mm Width), 4 Leads6-SO, 4 Lead
TLP290(BL-TP,SE
 Toshiba Semiconductor and Storage OPTOISOLATOR 3.75KV TRANSISTOR 4-SO в производстве13750Vrms200% @ 5mA600% @ 5mA3µs, 3µs2µs, 3µsAC, DCTransistor80V50mA1.25V50mA300mV-55°C ~ 110°CSMD Поверхностный монтаж4-SOIC (0.179", 4.55mm Width)4-SO
TLP290(GR-TP,SE
 Toshiba Semiconductor and Storage OPTOISOLATOR 3.75KV TRANSISTOR 4-SO в производстве13750Vrms100% @ 5mA300% @ 5mA3µs, 3µs2µs, 3µsAC, DCTransistor80V50mA1.25V50mA300mV-55°C ~ 110°CSMD Поверхностный монтаж4-SOIC (0.179", 4.55mm Width)4-SO
TLP185(GB-TPL,SE
 Toshiba Semiconductor and Storage OPTOISO 3.75KV TRANSISTOR 6-SO 4 LEAD в производстве13750Vrms100% @ 5mA600% @ 5mA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.25V50mA300mV-55°C ~ 110°CSMD Поверхностный монтаж6-SOIC (0.179", 4.55mm Width), 4 Leads6-SO, 4 Lead
TLP185(Y-TPL,SE
 Toshiba Semiconductor and Storage OPTOISO 3.75KV TRANSISTOR 6-SO 4 LEAD в производстве13750Vrms50% @ 5mA150% @ 5mA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.25V50mA300mV-55°C ~ 110°CSMD Поверхностный монтаж6-SOIC (0.179", 4.55mm Width), 4 Leads6-SO, 4 Lead
TLP184(BL-TPL,SE
 Toshiba Semiconductor and Storage OPTOISO 3.75KV TRANSISTOR 6-SO 4 LEAD в производстве13750Vrms200% @ 5mA600% @ 5mA3µs, 3µs2µs, 3µsAC, DCTransistor80V50mA1.25V50mA300mV-55°C ~ 110°CSMD Поверхностный монтаж6-SOIC (0.179", 4.55mm Width), 4 Leads6-SO, 4 Lead
TLP184(GR-TPL,SE
 Toshiba Semiconductor and Storage OPTOISO 3.75KV TRANSISTOR 6-SO 4 LEAD в производстве13750Vrms100% @ 5mA300% @ 5mA3µs, 3µs2µs, 3µsAC, DCTransistor80V50mA1.25V50mA300mV-55°C ~ 110°CSMD Поверхностный монтаж6-SOIC (0.179", 4.55mm Width), 4 Leads6-SO, 4 Lead
TLP292(GB-TPL,E
 Toshiba Semiconductor and Storage OPTOISOLATOR 3.75KV TRANSISTOR 4-SO в производстве13750Vrms100% @ 5mA600% @ 5mA3µs, 3µs2µs, 3µsAC, DCTransistor80V50mA1.25V50mA300mV-55°C ~ 125°CSMD Поверхностный монтаж4-SOIC (0.179", 4.55mm Width)4-SO
TLP293(BL-TPL,E
 Toshiba Semiconductor and Storage OPTOISOLATOR 3.75KV TRANSISTOR 4-SO в производстве13750Vrms200% @ 5mA600% @ 5mA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.25V50mA300mV-55°C ~ 125°CSMD Поверхностный монтаж4-SOIC (0.179", 4.55mm Width)4-SO
TLP383(D4BLLTL,E
 Toshiba Semiconductor and Storage OPTOISO 5KV TRANSISTOR SO6L в производстве15000Vrms200% @ 500µA400% @ 500µA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.25V50mA300mV-55°C ~ 125°CSMD Поверхностный монтаж6-SOIC (0.173", 4.40mm Width), 4 Leads6-SO
TLP2301(TPL,E
 Toshiba Semiconductor and Storage OPTOISO 3.75KV TRANSISTOR 6-SO 4 LEAD в производстве13750Vrms50% @ 1mA600% @ 1mA
-
-
DCTransistor40V50mA1.25V50mA300mV-55°C ~ 125°CSMD Поверхностный монтаж6-SOIC (0.179", 4.55mm Width), 4 Leads6-SO, 4 Lead
TLP291(GB,SE
 Toshiba Semiconductor and Storage OPTOISOLATOR 3.75KV TRANSISTOR 4-SO в производстве13750Vrms100% @ 5mA600% @ 5mA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.25V50mA300mV-55°C ~ 110°CSMD Поверхностный монтаж4-SOIC (0.179", 4.55mm Width)4-SO
TLP292-4(LA-TR,E
 Toshiba Semiconductor and Storage OPTOISOLATOR 3.75KV TRANSISTOR SO16 в производстве43750Vrms50% @ 500µA600% @ 500µA3µs, 3µs2µs, 3µsAC, DCTransistor80V50mA1.25V50mA300mV-55°C ~ 125°CSMD Поверхностный монтаж16-SOIC (0.179", 4.55mm Width)16-SO
TLP292-4(V4-TP,E
 Toshiba Semiconductor and Storage OPTOISOLATOR 3.75KV TRANSISTOR SO16 в производстве43750Vrms50% @ 5mA600% @ 5mA3µs, 3µs2µs, 3µsAC, DCTransistor80V50mA1.25V50mA300mV-55°C ~ 125°CSMD Поверхностный монтаж16-SOIC (0.179", 4.55mm Width)16-SO
TLP719(TP,F)
 Toshiba Semiconductor and Storage OPTOISOLATOR 5KV TRANSISTOR 6-SDIP GW в производстве15000Vrms20% @ 16mA
-
800ns, 800ns (Max)
-
DCTransistor20V8mA1.65V25mA
-
-55°C ~ 100°CSMD Поверхностный монтаж6-SOIC (0.268", 6.80mm Width)6-SDIP Gull Wing
TLP291(GR-TP,SE
 Toshiba Semiconductor and Storage OPTOISOLATOR 3.75KV TRANSISTOR 4-SO в производстве13750Vrms100% @ 5mA300% @ 5mA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.25V50mA300mV-55°C ~ 110°CSMD Поверхностный монтаж4-SOIC (0.179", 4.55mm Width)4-SO
TLP185(GRL-TL,SE
 Toshiba Semiconductor and Storage OPTOISO 3.75KV TRANSISTOR 6-SO 4 LEAD в производстве13750Vrms100% @ 5mA200% @ 5mA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.25V50mA300mV-55°C ~ 110°CSMD Поверхностный монтаж6-SOIC (0.179", 4.55mm Width), 4 Leads6-SO, 4 Lead
TLP183(BLL-TPL,E
 Toshiba Semiconductor and Storage OPTOISO 3.75KV TRANSISTOR 6-SO 4 LEAD в производстве13750Vrms200% @ 5mA600% @ 5mA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.25V50mA300mV-55°C ~ 125°CSMD Поверхностный монтаж6-SOIC (0.179", 4.55mm Width), 4 Leads6-SO, 4 Lead
TLP293-4(GBTPR,E
 Toshiba Semiconductor and Storage OPTOISOLATOR 3.75KV TRANSISTOR SO16 в производстве43750Vrms100% @ 5mA600% @ 5mA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.25V50mA300mV-55°C ~ 125°CSMD Поверхностный монтаж16-SOIC (0.179", 4.55mm Width)16-SO
TLP293-4(LA-TP,E
 Toshiba Semiconductor and Storage OPTOISOLATOR 3.75KV TRANSISTOR SO16 в производстве43750Vrms50% @ 500µA600% @ 500µA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.25V50mA300mV-55°C ~ 125°CSMD Поверхностный монтаж16-SOIC (0.179", 4.55mm Width)16-SO
TLP293-4(V4LATPE
 Toshiba Semiconductor and Storage OPTOISOLATOR 3.75KV TRANSISTOR SO16 в производстве43750Vrms50% @ 500µA600% @ 500µA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.25V50mA300mV-55°C ~ 125°CSMD Поверхностный монтаж16-SOIC (0.179", 4.55mm Width)16-SO
TLP293-4(V4LATRE
 Toshiba Semiconductor and Storage OPTOISOLATOR 3.75KV TRANSISTOR SO16 в производстве43750Vrms50% @ 500µA600% @ 500µA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.25V50mA300mV-55°C ~ 125°CSMD Поверхностный монтаж16-SOIC (0.179", 4.55mm Width)16-SO
TLP293-4(V4-TP,E
 Toshiba Semiconductor and Storage OPTOISOLATOR 3.75KV TRANSISTOR SO16 в производстве43750Vrms50% @ 5mA600% @ 5mA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.25V50mA300mV-55°C ~ 125°CSMD Поверхностный монтаж16-SOIC (0.179", 4.55mm Width)16-SO
TLP292-4(GBTPR,E
 Toshiba Semiconductor and Storage OPTOISOLATOR 3.75KV TRANSISTOR SO16 в производстве43750Vrms100% @ 5mA600% @ 5mA3µs, 3µs2µs, 3µsAC, DCTransistor80V50mA1.25V50mA300mV-55°C ~ 125°CSMD Поверхностный монтаж16-SOIC (0.179", 4.55mm Width)16-SO
TLP292-4(LGBTP,E
 Toshiba Semiconductor and Storage OPTOISOLATOR 3.75KV TRANSISTOR SO16 в производстве43750Vrms100% @ 500µA600% @ 500µA3µs, 3µs2µs, 3µsAC, DCTransistor80V50mA1.25V50mA300mV-55°C ~ 125°CSMD Поверхностный монтаж16-SOIC (0.179", 4.55mm Width)16-SO
TLP292-4(TPR,E
 Toshiba Semiconductor and Storage OPTOISOLATOR 3.75KV TRANSISTOR SO16 в производстве43750Vrms50% @ 5mA600% @ 5mA3µs, 3µs2µs, 3µsAC, DCTransistor80V50mA1.25V50mA300mV-55°C ~ 125°CSMD Поверхностный монтаж16-SOIC (0.179", 4.55mm Width)16-SO
TLP185(E)
 Toshiba Semiconductor and Storage OPTOISO 3.75KV TRANSISTOR 6-SO 4 LEAD в производстве13750Vrms50% @ 5mA400% @ 5mA9µs, 9µs5µs, 9µsDCTransistor80V50mA1.25V50mA300mV-55°C ~ 110°CSMD Поверхностный монтаж6-SOIC (0.179", 4.55mm Width), 4 Leads6-SO, 4 Lead
TLP185(GB,E)
 Toshiba Semiconductor and Storage OPTOISO 3.75KV TRANSISTOR 6-SO 4 LEAD в производстве13750Vrms100% @ 5mA400% @ 5mA9µs, 9µs5µs, 9µsDCTransistor80V50mA1.25V50mA300mV-55°C ~ 110°CSMD Поверхностный монтаж6-SOIC (0.179", 4.55mm Width), 4 Leads6-SO, 4 Lead
TLP184(GB,E)
 Toshiba Semiconductor and Storage OPTOISO 3.75KV TRANSISTOR 6-SO 4 LEAD в производстве13750Vrms100% @ 5mA400% @ 5mA9µs, 9µs5µs, 9µsAC, DCTransistor80V50mA1.25V50mA300mV-55°C ~ 125°CSMD Поверхностный монтаж6-SOIC (0.179", 4.55mm Width), 4 Leads6-SO, 4 Lead
TLP293-4(V4LGB,E
 Toshiba Semiconductor and Storage OPTOISOLATOR 3.75KV TRANSISTOR SO16 в производстве43750Vrms100% @ 500µA600% @ 500µA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.25V50mA300mV-55°C ~ 125°CSMD Поверхностный монтаж16-SOIC (0.179", 4.55mm Width)16-SO
TLP293-4(LGB,E
 Toshiba Semiconductor and Storage OPTOISOLATOR 3.75KV TRANSISTOR SO16 в производстве43750Vrms100% @ 500µA600% @ 500µA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.25V50mA300mV-55°C ~ 125°CSMD Поверхностный монтаж16-SOIC (0.179", 4.55mm Width)16-SO
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