1. Главная
  2. Продукты
  3. Изоляторы
  4. Оптоизоляторы - транзистор, фотогальванический выход
  5. Продукты

Производители для Оптоизоляторы - транзистор, фотогальванический выход

Broadcom Limited
CEL (California Eastern Laboratories)
Everlight Electronics
Infineon Technologies
Isocom
IXYS Integrated Circuits Division
Lite-On, Inc.
Lumex, Inc.
ON Semiconductor
Panasonic
QT Brightek
Renesas Electronics America
Sharp Microelectronics
Skyworks Solutions, Inc.
Socle Technology Corporation
Standex-Meder Electronics
Taiwan Semiconductor
Toshiba Semiconductor and Storage
TT Electronics/Optek Technology
Vishay
Weidmüller
номер части Производитель / Марка Краткое описание Статус деталиКоличество каналовНапряжение - изоляцияКоэффициент передачи в реальном времени (мин.)Коэффициент передачи тока (макс.)Время включения / выключения (Тип)Время нарастания / падения (Тип)Тип вводаТип выходаНапряжение - выход (макс.)Текущий - выход / каналНапряжение - Вперед (Vf) (Тип)Current - DC Forward (If) (Max)Vce Saturation (Макс.)Рабочая ТемператураТип монтажаУпаковка / чехолПакет устройств поставщика
TLP624-2(F)
 Toshiba Semiconductor and Storage OPTOISOLATOR 5KV 2CH TRANSISTOR 8-DIP в производстве25000Vrms100% @ 1mA1200% @ 1mA10µs, 8µs8µs, 8µsDCTransistor55V50mA1.15V50mA400mV-55°C ~ 100°CThrough Hole8-DIP (0.300", 7.62mm)8-DIP
TLP626-2(F)
 Toshiba Semiconductor and Storage OPTOISOLATOR 5KV 2CH TRANSISTOR 8-DIP в производстве25000Vrms100% @ 1mA1200% @ 1mA10µs, 8µs8µs, 8µsAC, DCTransistor55V50mA1.15V50mA400mV-55°C ~ 100°CThrough Hole8-DIP (0.300", 7.62mm)8-DIP
TLP627-4F
 Toshiba Semiconductor and Storage OPTOISO 5KV 4CH DARLINGTON 16DIP в производстве45000Vrms1000% @ 1mA
-
50µs, 15µs40µs, 15µsDCDarlington300V150mA1.15V50mA1.2V-55°C ~ 100°CThrough Hole16-DIP (0.300", 7.62mm)16-DIP
TLP631(GB,F)
 Toshiba Semiconductor and Storage OPTOISO 5KV TRANSISTOR W/BASE 6DIP в производстве15000Vrms100% @ 5mA600% @ 5mA3µs, 3µs2µs, 3µsDCTransistor with Base55V50mA1.15V60mA400mV-55°C ~ 100°CThrough Hole6-DIP (0.300", 7.62mm)6-DIP
TLP732(D4-GR-LF2,F
 Toshiba Semiconductor and Storage OPTOISOLATR 4KV TRANSISTOR 6DIP в производстве14000Vrms50% @ 5mA600% @ 5mA3µs, 3µs2µs, 3µsDCTransistor55V50mA1.15V60mA400mV-55°C ~ 100°CThrough Hole6-DIP (0.400", 10.16mm)6-DIP
TLP281(GB-TP,F)
 Toshiba Semiconductor and Storage OPTOISOLATOR 2.5KV TRANSISTOR 4-SOP устарелый12500Vrms100% @ 5mA600% @ 5mA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.15V50mA400mV-55°C ~ 100°CSMD Поверхностный монтаж4-SOIC (0.173", 4.40mm Width)4-SOP
TLP281-4(GB-TP,J,F
 Toshiba Semiconductor and Storage OPTOISO 2.5KV 4CH TRANSISTOR 16-SOP устарелый42500Vrms100% @ 5mA600% @ 5mA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.15V50mA400mV-55°C ~ 100°CSMD Поверхностный монтаж16-SOIC (0.173", 4.40mm Width)16-SOP
TLP624-4(F)
 Toshiba Semiconductor and Storage OPTOISOLTR 5KV 4CH TRANSISTOR 16-DIP в производстве45000Vrms100% @ 1mA1200% @ 1mA10µs, 8µs8µs, 8µsDCTransistor55V50mA1.15V50mA400mV-55°C ~ 100°CThrough Hole16-DIP (0.300", 7.62mm)16-DIP
TLP620-2(GBTP1,F,T)
 Toshiba Semiconductor and Storage OPTOISOLATOR 5KV 2CH TRANSISTOR 8-SMD Discontinued at -25000Vrms100% @ 5mA600% @ 5mA3µs, 3µs2µs, 3µsAC, DCTransistor55V50mA1.15V50mA400mV-55°C ~ 100°CSMD Поверхностный монтаж8-SMD, Gull Wing8-SMD
TLP131(F)
 Toshiba Semiconductor and Storage OPTOISO 3.75KV TRANSISTOR 6-MFSOP в производстве13750Vrms50% @ 5mA600% @ 5mA3µs, 3µs2µs, 3µsDCTransistor with Base80V50mA1.15V50mA400mV-55°C ~ 100°CSMD Поверхностный монтаж6-SOIC (0.173", 4.40mm Width), 5 Leads6-MFSOP, 5 Lead
TLP131(GB-TPR,F)
 Toshiba Semiconductor and Storage OPTOISO 3.75KV TRANSISTOR 6-MFSOP Discontinued at -13750Vrms100% @ 5mA600% @ 5mA3µs, 3µs2µs, 3µsDCTransistor with Base80V50mA1.15V50mA400mV-55°C ~ 100°CSMD Поверхностный монтаж6-SOIC (0.173", 4.40mm Width), 5 Leads6-MFSOP, 5 Lead
4N25A(SHORT,F)
 Toshiba Semiconductor and Storage OPTOISO 2.5KV TRANSISTOR W/BASE 6DIP в производстве12500Vrms20% @ 10mA
-
-
2µs, 200µsDCTransistor with Base30V100mA1.15V80mA500mV-55°C ~ 100°CThrough Hole6-DIP (0.300", 7.62mm)6-DIP
TLP504A(F)
 Toshiba Semiconductor and Storage OPTOISOLTR 2.5KV 2CH TRANSISTOR 8-DIP устарелый22500Vrms50% @ 5mA600% @ 5mA3µs, 3µs2µs, 3µsDCTransistor55V50mA1.15V60mA400mV-55°C ~ 100°CThrough Hole8-DIP (0.300", 7.62mm)8-DIP
TLP731(D4-GR,F)
 Toshiba Semiconductor and Storage OPTOISO 4KV TRANSISTOR W/BASE 6DIP в производстве14000Vrms50% @ 5mA600% @ 5mA3µs, 3µs2µs, 3µsDCTransistor with Base55V50mA1.15V60mA400mV-55°C ~ 100°CThrough Hole6-DIP (0.300", 7.62mm)6-DIP
TLP627(TP1,F)
 Toshiba Semiconductor and Storage OPTOISOLTR 5KV DARLINGTON 4-SMD в производстве15000Vrms1000% @ 1mA
-
50µs, 15µs40µs, 15µsDCDarlington300V150mA1.15V60mA1.2V-55°C ~ 100°CSMD Поверхностный монтаж4-SMD, Gull Wing4-SMD
TLP280-4(GB-TP,J,F
 Toshiba Semiconductor and Storage OPTOISO 2.5KV 4CH TRANSISTOR 16-SOP устарелый42500Vrms100% @ 5mA600% @ 5mA3µs, 3µs2µs, 3µsAC, DCTransistor80V50mA1.15V50mA400mV-55°C ~ 100°CSMD Поверхностный монтаж16-SOIC (0.173", 4.40mm Width)16-SOP
4N26(SHORT,F)
 Toshiba Semiconductor and Storage OPTOISO 2.5KV TRANSISTOR W/BASE 6DIP в производстве12500Vrms20% @ 10mA
-
-
2µs, 200µsDCTransistor with Base30V100mA1.15V80mA500mV-55°C ~ 100°CThrough Hole6-DIP (0.300", 7.62mm)6-DIP
6N138(TP1,F)
 Toshiba Semiconductor and Storage OPTOISO 2.5KV DARL W/BASE 8SMD в производстве12500Vrms300% @ 1.6mA
-
1µs, 4µs
-
DCDarlington with Base18V60mA1.65V20mA
-
0°C ~ 70°CSMD Поверхностный монтаж8-SMD, Gull Wing8-SMD
TLP331(BV,F)
 Toshiba Semiconductor and Storage OPTOISO 5KV TRANSISTOR W/BASE 6DIP в производстве15000Vrms200% @ 1mA1200% @ 1mA10µs, 8µs8µs, 8µsDCTransistor with Base55V50mA1.15V50mA400mV-55°C ~ 100°CThrough Hole6-DIP (0.300", 7.62mm)6-DIP
TLP631(BL,F)
 Toshiba Semiconductor and Storage OPTOISO 5KV TRANSISTOR W/BASE 6DIP в производстве15000Vrms200% @ 5mA600% @ 5mA3µs, 3µs2µs, 3µsDCTransistor with Base55V50mA1.15V60mA400mV-55°C ~ 100°CThrough Hole6-DIP (0.300", 7.62mm)6-DIP
TLP631(GR,F)
 Toshiba Semiconductor and Storage OPTOISO 5KV TRANSISTOR W/BASE 6DIP в производстве15000Vrms100% @ 5mA300% @ 5mA3µs, 3µs2µs, 3µsDCTransistor with Base55V50mA1.15V60mA400mV-55°C ~ 100°CThrough Hole6-DIP (0.300", 7.62mm)6-DIP
TLP781(BL,F)
 Toshiba Semiconductor and Storage OPTOISOLATR 5KV TRANSISTOR 4-DIP в производстве15000Vrms200% @ 5mA600% @ 5mA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.15V60mA400mV-55°C ~ 110°CThrough Hole4-DIP (0.300", 7.62mm)4-DIP
TLP781(D4-GR,F)
 Toshiba Semiconductor and Storage OPTOISOLATR 5KV TRANSISTOR 4-DIP в производстве15000Vrms100% @ 5mA300% @ 5mA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.15V60mA400mV-55°C ~ 110°CThrough Hole4-DIP (0.300", 7.62mm)4-DIP
TLP781(F)
 Toshiba Semiconductor and Storage OPTOISOLATR 5KV TRANSISTOR 4-DIP устарелый15000Vrms50% @ 5mA600% @ 5mA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.15V60mA400mV-55°C ~ 110°CThrough Hole4-DIP (0.300", 7.62mm)4-DIP
TLP781(GB,F)
 Toshiba Semiconductor and Storage OPTOISOLATR 5KV TRANSISTOR 4-DIP в производстве15000Vrms100% @ 5mA600% @ 5mA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.15V60mA400mV-55°C ~ 110°CThrough Hole4-DIP (0.300", 7.62mm)4-DIP
TLP281-4(TP,J,F)
 Toshiba Semiconductor and Storage OPTOISO 2.5KV 4CH TRANSISTOR 16-SOP устарелый42500Vrms50% @ 5mA600% @ 5mA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.15V50mA400mV-55°C ~ 100°CSMD Поверхностный монтаж16-SOIC (0.173", 4.40mm Width)16-SOP
TLP781(GB-LF6,F)
 Toshiba Semiconductor and Storage OPTOISOLATR 5KV TRANSISTOR 4-SMD в производстве15000Vrms100% @ 5mA600% @ 5mA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.15V60mA400mV-55°C ~ 110°CSMD Поверхностный монтаж4-SMD, Gull Wing4-SMD
TLP781(GB-TP6,F)
 Toshiba Semiconductor and Storage OPTOISOLATR 5KV TRANSISTOR 4-SMD Discontinued at -15000Vrms100% @ 5mA600% @ 5mA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.15V60mA400mV-55°C ~ 110°CSMD Поверхностный монтаж4-SMD, Gull Wing4-SMD
4N36(SHORT,F)
 Toshiba Semiconductor and Storage OPTOISO 2.5KV TRANSISTOR W/BASE 6DIP в производстве12500Vrms40% @ 10mA
-
3µs, 3µs
-
DCTransistor with Base30V100mA1.15V60mA300mV-55°C ~ 100°CThrough Hole6-DIP (0.300", 7.62mm)6-DIP
TLP512(F)
 Toshiba Semiconductor and Storage OPTOISOLATOR 2.5KV TRANSISTOR 6-DIP в производстве12500Vrms15% @ 16mA
-
800ns, 800ns (Max)
-
DCTransistor15V8mA1.65V25mA
-
-55°C ~ 100°CThrough Hole6-DIP (0.300", 7.62mm)6-DIP
TLP285(TP,F)
 Toshiba Semiconductor and Storage OPTOISOLATOR 3.75KV TRANSISTOR 4-SOP устарелый13750Vrms50% @ 5mA600% @ 5mA3µs, 3µs2µs, 3µsDCTransistor80V50mA1.15V50mA400mV-55°C ~ 110°CSMD Поверхностный монтаж4-SOIC (0.173", 4.40mm Width)4-SOP
TLP283(TP,F)
 Toshiba Semiconductor and Storage OPTOISOLATOR 2.5KV TRANSISTOR 4-SOP устарелый12500Vrms100% @ 1mA400% @ 1mA7.5µs, 70µs
-
DCTransistor100V50mA1.15V50mA400mV-55°C ~ 100°CSMD Поверхностный монтаж4-SOIC (0.173", 4.40mm Width)4-SOP
TLP626(TP1,F)
 Toshiba Semiconductor and Storage OPTOISOLATR 5KV TRANSISTOR 4-SMD в производстве15000Vrms100% @ 1mA1200% @ 1mA10µs, 8µs8µs, 8µsAC, DCTransistor55V50mA1.15V60mA400mV-55°C ~ 100°CSMD Поверхностный монтаж4-SMD, Gull Wing4-SMD
TLP290(E)
 Toshiba Semiconductor and Storage OPTOISOLATOR 3.75KV TRANSISTOR 4-SO в производстве13750Vrms50% @ 5mA400% @ 5mA7µs, 7µs4µs, 7µsAC, DCTransistor80V50mA1.25V50mA300mV-55°C ~ 110°CSMD Поверхностный монтаж4-SOIC (0.179", 4.55mm Width)4-SO
TLP291(E)
 Toshiba Semiconductor and Storage OPTOISOLATOR 3.75KV TRANSISTOR 4-SO в производстве13750Vrms50% @ 5mA400% @ 5mA7µs, 7µs4µs, 7µsDCTransistor80V50mA1.25V50mA300mV-55°C ~ 110°CSMD Поверхностный монтаж4-SOIC (0.179", 4.55mm Width)4-SO
TLP291(GR,E)
 Toshiba Semiconductor and Storage OPTOISOLATOR 3.75KV TRANSISTOR 4-SO в производстве13750Vrms100% @ 5mA300% @ 5mA7µs, 7µs4µs, 7µsDCTransistor80V50mA1.25V50mA300mV-55°C ~ 110°CSMD Поверхностный монтаж4-SOIC (0.179", 4.55mm Width)4-SO
TLP290(GR-TP,E)
 Toshiba Semiconductor and Storage OPTOISOLATOR 3.75KV TRANSISTOR 4-SO в производстве13750Vrms100% @ 5mA300% @ 5mA7µs, 7µs4µs, 7µsAC, DCTransistor80V50mA1.25V50mA300mV-55°C ~ 110°CSMD Поверхностный монтаж4-SOIC (0.179", 4.55mm Width)4-SO
TLP290(TP,E)
 Toshiba Semiconductor and Storage OPTOISOLATOR 3.75KV TRANSISTOR 4-SO Discontinued at -13750Vrms50% @ 5mA400% @ 5mA7µs, 7µs4µs, 7µsAC, DCTransistor80V50mA1.25V50mA300mV-55°C ~ 110°CSMD Поверхностный монтаж4-SOIC (0.179", 4.55mm Width)4-SO
TLP290(GB-TP,E)
 Toshiba Semiconductor and Storage OPTOISOLATOR 3.75KV TRANSISTOR 4-SO в производстве13750Vrms100% @ 5mA400% @ 5mA7µs, 7µs4µs, 7µsAC, DCTransistor80V50mA1.25V50mA300mV-55°C ~ 110°CSMD Поверхностный монтаж4-SOIC (0.179", 4.55mm Width)4-SO
TLP291(GR-TP,E)
 Toshiba Semiconductor and Storage OPTOISOLATOR 3.75KV TRANSISTOR 4-SO в производстве13750Vrms100% @ 5mA300% @ 5mA7µs, 7µs4µs, 7µsDCTransistor80V50mA1.25V50mA300mV-55°C ~ 110°CSMD Поверхностный монтаж4-SOIC (0.179", 4.55mm Width)4-SO
  1. 1
  2. 2
  3. 3
  4. 4
  5. 5
  6. 6
  7. 7
  8. 8
Email: sales@icchip.ru
Copyright © 2019 ICCHIP ® Все права защищены