номер части Производитель / Марка Краткое описание Статус деталиТип полевого транзистораФункция FETСлив к источнику напряжения (Vdss)Ток - непрерывный слив (Id) при 25 ° CRds On (Макс.) @ Id, VgsVgs (th) (Max) @ IdЗаряд затвора (Qg) (Макс.) @ VgsВходная емкость (Ciss) (Макс.) @ VdsМощность - макс.Рабочая ТемператураТип монтажаУпаковка / чехолПакет устройств поставщика
Advanced Linear Devices Inc. MOSFET 2N-CH 10.6V 8SOIC в производстве2 N-Channel (Dual) Matched PairStandard10.6V
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500 Ohm @ 5V1V @ 1µA
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3pF @ 5V500mW0°C ~ 70°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
Advanced Linear Devices Inc. MOSFET 4N-CH 10.6V 14SOIC в производстве4 N-Channel, Matched PairStandard10.6V
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500 Ohm @ 5V1V @ 1µA
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3pF @ 5V500mW0°C ~ 70°C (TJ)SMD Поверхностный монтаж14-SOIC (0.154", 3.90mm Width)14-SOIC
Advanced Linear Devices Inc. MOSFET 2N/2P-CH 10.6V 14DIP в производстве2 N and 2 P-Channel Matched PairStandard10.6V
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500 Ohm @ 5V1V @ 1µA
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3pF @ 5V500mW0°C ~ 70°C (TJ)Through Hole14-DIP (0.300", 7.62mm)14-PDIP
Advanced Linear Devices Inc. MOSFET 2N/2P-CH 10.6V 14DIP в производстве2 N and 2 P-Channel Matched PairStandard10.6V40mA, 16mA75 Ohm @ 5V1V @ 10µA
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10pF @ 5V500mW0°C ~ 70°C (TJ)Through Hole14-DIP (0.300", 7.62mm)14-PDIP
Advanced Linear Devices Inc. MOSFET 2N-CH 10.6V 8SOIC в производстве2 N-Channel (Dual) Matched PairStandard10.6V
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500 Ohm @ 4V20mV @ 1µA
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2.5pF @ 5V500mW0°C ~ 70°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
Advanced Linear Devices Inc. MOSFET 2N/2P-CH 10.6V 14SOIC в производстве2 N and 2 P-Channel Matched PairStandard10.6V
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500 Ohm @ 5V1V @ 1µA
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3pF @ 5V500mW0°C ~ 70°C (TJ)SMD Поверхностный монтаж14-SOIC (0.154", 3.90mm Width)14-SOIC
Advanced Linear Devices Inc. MOSFET 2N-CH 10.6V 8SOIC в производстве2 N-Channel (Dual) Matched PairStandard10.6V
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500 Ohm @ 5.9V3.35V @ 1µA
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2.5pF @ 5V500mW0°C ~ 70°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
Advanced Linear Devices Inc. MOSFET 2N-CH 10.6V 8SOIC в производстве2 N-Channel (Dual) Matched PairStandard10.6V12mA, 3mA500 Ohm @ 4.8V810mV @ 1µA
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2.5pF @ 5V500mW0°C ~ 70°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
Advanced Linear Devices Inc. MOSFET 2N-CH 10.6V 8DIP в производстве2 N-Channel (Dual) Matched PairStandard10.6V
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75 Ohm @ 5V1V @ 10µA
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500mW0°C ~ 70°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-PDIP
Advanced Linear Devices Inc. MOSFET 2P-CH 10.6V 8DIP в производстве2 P-Channel (Dual) Matched PairStandard10.6V
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270 Ohm @ 5V1.2V @ 10µA
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10pF @ 5V500mW0°C ~ 70°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-PDIP
Advanced Linear Devices Inc. MOSFET 2N-CH 10.6V 8SOIC в производстве2 N-Channel (Dual) Matched PairStandard10.6V
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75 Ohm @ 5V1V @ 10µA
-
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500mW0°C ~ 70°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
Advanced Linear Devices Inc. MOSFET 4N-CH 10.6V 16SOIC в производстве4 N-Channel, Matched PairDepletion Mode10.6V12mA, 3mA540 Ohm @ 0V3.45V @ 1µA
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2.5pF @ 5V500mW0°C ~ 70°C (TJ)SMD Поверхностный монтаж16-SOIC (0.154", 3.90mm Width)16-SOIC
Advanced Linear Devices Inc. MOSFET 2N-CH 10.6V 8SOIC в производстве2 N-Channel (Dual) Matched PairStandard10.6V
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75 Ohm @ 5V1V @ 10µA
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500mW0°C ~ 70°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
Advanced Linear Devices Inc. MOSFET N/P-CH 10.6V 8DIP в производствеN and P-Channel ComplementaryStandard10.6V
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1800 Ohm @ 5V1V @ 1µA
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3pF @ 5V500mW0°C ~ 70°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-PDIP
Advanced Linear Devices Inc. MOSFET 4N-CH 10.6V 14DIP в производстве4 N-Channel, Matched PairStandard10.6V
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500 Ohm @ 5V1V @ 1µA
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3pF @ 5V500mW0°C ~ 70°C (TJ)Through Hole14-DIP (0.300", 7.62mm)14-PDIP
Advanced Linear Devices Inc. MOSFET 2N-CH 10.6V 8DIP в производстве2 N-Channel (Dual) Matched PairStandard10.6V
-
500 Ohm @ 5V1V @ 1µA
-
3pF @ 5V500mW0°C ~ 70°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-PDIP
Advanced Linear Devices Inc. MOSFET 2P-CH 10.6V 8SOIC в производстве2 P-Channel (Dual) Matched PairStandard10.6V
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1800 Ohm @ 5V1V @ 1µA
-
3pF @ 5V500mW0°C ~ 70°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
Advanced Linear Devices Inc. MOSFET 2N-CH 10.6V 8SOIC в производстве2 N-Channel (Dual) Matched PairStandard10.6V
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500 Ohm @ 4.2V220mV @ 1µA
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2.5pF @ 5V500mW0°C ~ 70°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
Advanced Linear Devices Inc. MOSFET 2N-CH 10.6V 8DIP в производстве2 N-Channel (Dual) Matched PairStandard10.6V
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500 Ohm @ 4V20mV @ 1µA
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2.5pF @ 5V500mW0°C ~ 70°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-PDIP
Advanced Linear Devices Inc. MOSFET 2N-CH 10.6V 8SOIC в производстве2 N-Channel (Dual) Matched PairStandard10.6V12mA, 3mA500 Ohm @ 5.4V1.42V @ 1µA
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2.5pF @ 5V500mW0°C ~ 70°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
Advanced Linear Devices Inc. MOSFET 2N-CH 10.6V 8SOIC в производстве2 N-Channel (Dual) Matched PairDepletion Mode10.6V12mA, 3mA500 Ohm @ 2.7V1.26V @ 1µA
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2.5pF @ 5V500mW0°C ~ 70°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
Advanced Linear Devices Inc. MOSFET 4N-CH 10.6V 16DIP в производстве4 N-Channel, Matched PairStandard10.6V
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500 Ohm @ 4V20mV @ 1µA
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2.5pF @ 5V500mW0°C ~ 70°C (TJ)Through Hole16-DIP (0.300", 7.62mm)16-PDIP
Advanced Linear Devices Inc. MOSFET 2N-CH 10.6V 0.08A 8DIP в производстве2 N-Channel (Dual) Matched PairLogic Level Gate10.6V80mA14 Ohm20mV @ 20µA
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30pF @ 5V500mW0°C ~ 70°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-PDIP
Advanced Linear Devices Inc. MOSFET 4N-CH 10.6V 16SOIC в производстве4 N-Channel, Matched PairStandard10.6V12mA, 3mA500 Ohm @ 5.4V1.42V @ 1µA
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2.5pF @ 5V500mW0°C ~ 70°C (TJ)SMD Поверхностный монтаж16-SOIC (0.154", 3.90mm Width)16-SOIC
Advanced Linear Devices Inc. MOSFET 4N-CH 10.6V 0.08A 16SOIC в производстве4 N-Channel, Matched PairLogic Level Gate10.6V80mA25 Ohm20mV @ 10µA
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15pF @ 5V500mW0°C ~ 70°C (TJ)SMD Поверхностный монтаж16-SOIC (0.154", 3.90mm Width)16-SOIC
Advanced Linear Devices Inc. MOSFET 2N-CH 10.6V 8SOIC в производстве2 N-Channel (Dual) Matched PairStandard10.6V
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500 Ohm @ 4V10mV @ 1µA
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2.5pF @ 5V500mW0°C ~ 70°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
Advanced Linear Devices Inc. MOSFET 2N-CH 10.6V 8DIP в производстве2 N-Channel (Dual) Matched PairStandard10.6V
-
500 Ohm @ 4V10mV @ 1µA
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2.5pF @ 5V500mW0°C ~ 70°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-PDIP
Advanced Linear Devices Inc. MOSFET 2P-CH 10.6V 8SOIC в производстве2 P-Channel (Dual) Matched PairStandard10.6V
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270 Ohm @ 5V1.2V @ 10µA
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10pF @ 5V500mW0°C ~ 70°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
Advanced Linear Devices Inc. MOSFET 2N/2P-CH 10.6V 14SOIC в производстве2 N and 2 P-Channel Matched PairStandard10.6V40mA, 16mA75 Ohm @ 5V1V @ 10µA
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10pF @ 5V500mW0°C ~ 70°C (TJ)SMD Поверхностный монтаж14-SOIC (0.154", 3.90mm Width)14-SOIC
Advanced Linear Devices Inc. MOSFET 4N-CH 10.6V 0.08A 16DIP в производстве4 N-Channel, Matched PairLogic Level Gate10.6V80mA25 Ohm10mV @ 10µA
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15pF @ 5V500mW0°C ~ 70°C (TJ)Through Hole16-DIP (0.300", 7.62mm)16-PDIP
Advanced Linear Devices Inc. MOSFET 4N-CH 10.6V 16DIP в производстве4 N-Channel, Matched PairDepletion Mode10.6V12mA, 3mA500 Ohm @ 3.6V380mV @ 1µA
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2.5pF @ 5V500mW0°C ~ 70°C (TJ)Through Hole16-DIP (0.300", 7.62mm)16-PDIP
Advanced Linear Devices Inc. MOSFET 2P-CH 10.6V 8SOIC в производстве2 P-Channel (Dual) Matched PairStandard10.6V
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270 Ohm @ 5V1.2V @ 10µA
-
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500mW0°C ~ 70°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
Advanced Linear Devices Inc. MOSFET 2N-CH 10.6V 8DIP в производстве2 N-Channel (Dual) Matched PairStandard10.6V
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500 Ohm @ 4.2V220mV @ 1µA
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2.5pF @ 5V500mW0°C ~ 70°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-PDIP
Advanced Linear Devices Inc. MOSFET 2N-CH 10.6V 8SOIC в производстве2 N-Channel (Dual) Matched PairDepletion Mode10.6V12mA, 3mA500 Ohm @ 3.6V360mV @ 1µA
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2.5pF @ 5V500mW0°C ~ 70°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
Advanced Linear Devices Inc. MOSFET 4N-CH 10.6V 16DIP в производстве4 N-Channel, Matched PairStandard10.6V12mA, 3mA500 Ohm @ 4.4V420mV @ 1µA
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2.5pF @ 5V500mW0°C ~ 70°C (TJ)Through Hole16-DIP (0.300", 7.62mm)16-PDIP
Advanced Linear Devices Inc. MOSFET 4N-CH 10.6V 16DIP в производстве4 N-Channel, Matched PairStandard10.6V
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500 Ohm @ 4.2V220mV @ 1µA
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2.5pF @ 5V500mW0°C ~ 70°C (TJ)Through Hole16-DIP (0.300", 7.62mm)16-PDIP
Advanced Linear Devices Inc. MOSFET 2N-CH 10.6V 0.08A 8DIP в производстве2 N-Channel (Dual) Matched PairLogic Level Gate10.6V80mA14 Ohm10mV @ 20µA
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30pF @ 5V500mW0°C ~ 70°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-PDIP
Advanced Linear Devices Inc. MOSFET 4N-CH 10.6V 0.08A 16SOIC в производстве4 N-Channel, Matched PairLogic Level Gate10.6V80mA25 Ohm10mV @ 10µA
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15pF @ 5V500mW0°C ~ 70°C (TJ)SMD Поверхностный монтаж16-SOIC (0.154", 3.90mm Width)16-SOIC
Advanced Linear Devices Inc. MOSFET 4 P-CH 8V 16DIP в производстве4 P-Channel, Matched PairStandard8V
-
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20mV @ 1µA
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2.5pF @ 5V500mW0°C ~ 70°CThrough Hole16-DIP (0.300", 7.62mm)16-PDIP
Advanced Linear Devices Inc. MOSFET 4 P-CH 8V 16SOIC в производстве4 P-Channel, Matched PairStandard8V
-
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780mV @ 1µA
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2.5pF @ 5V500mW0°C ~ 70°CSMD Поверхностный монтаж16-SOIC (0.154", 3.90mm Width)16-SOIC
Advanced Linear Devices Inc. MOSFET 2N-CH 10.6V 8SOIC в производстве2 N-Channel (Dual) Matched PairDepletion Mode10.6V12mA, 3mA540 Ohm @ 0V3.45V @ 1µA
-
2.5pF @ 5V500mW0°C ~ 70°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
Advanced Linear Devices Inc. MOSFET 4P-CH 10.6V 14DIP в производстве4 P-Channel, Matched PairStandard10.6V
-
1800 Ohm @ 5V1V @ 1µA
-
3pF @ 5V500mW0°C ~ 70°C (TJ)Through Hole14-DIP (0.300", 7.62mm)14-PDIP
Advanced Linear Devices Inc. MOSFET 2P-CH 10.6V 8DIP в производстве2 P-Channel (Dual) Matched PairStandard10.6V
-
1800 Ohm @ 5V1V @ 1µA
-
3pF @ 5V500mW0°C ~ 70°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-PDIP
Advanced Linear Devices Inc. MOSFET 4P-CH 10.6V 14SOIC в производстве4 P-Channel, Matched PairStandard10.6V
-
1800 Ohm @ 5V1V @ 1µA
-
3pF @ 5V500mW0°C ~ 70°C (TJ)SMD Поверхностный монтаж14-SOIC (0.154", 3.90mm Width)14-SOIC
Advanced Linear Devices Inc. MOSFET 4N-CH 10.6V 16SOIC в производстве4 N-Channel, Matched PairStandard10.6V
-
500 Ohm @ 4V10mV @ 1µA
-
2.5pF @ 5V500mW0°C ~ 70°C (TJ)SMD Поверхностный монтаж16-SOIC (0.154", 3.90mm Width)16-SOIC
Advanced Linear Devices Inc. MOSFET 2N-CH 10.6V 8DIP в производстве2 N-Channel (Dual) Matched PairStandard10.6V12mA, 3mA500 Ohm @ 4.4V420mV @ 1µA
-
2.5pF @ 5V500mW0°C ~ 70°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-PDIP
Advanced Linear Devices Inc. MOSFET 2N-CH 10.6V 8SOIC в производстве2 N-Channel (Dual) Matched PairStandard10.6V12mA, 3mA500 Ohm @ 4.4V420mV @ 1µA
-
2.5pF @ 5V500mW0°C ~ 70°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
Advanced Linear Devices Inc. MOSFET 4N-CH 10.6V 16SOIC в производстве4 N-Channel, Matched PairStandard10.6V
-
500 Ohm @ 4.2V220mV @ 1µA
-
2.5pF @ 5V500mW0°C ~ 70°C (TJ)SMD Поверхностный монтаж16-SOIC (0.154", 3.90mm Width)16-SOIC
Advanced Linear Devices Inc. MOSFET 4N-CH 10.6V 16SOIC в производстве4 N-Channel, Matched PairStandard10.6V12mA, 3mA500 Ohm @ 4.4V420mV @ 1µA
-
2.5pF @ 5V500mW0°C ~ 70°C (TJ)SMD Поверхностный монтаж16-SOIC (0.154", 3.90mm Width)16-SOIC
Advanced Linear Devices Inc. MOSFET 4N-CH 10.6V 16DIP в производстве4 N-Channel, Matched PairStandard10.6V12mA, 3mA500 Ohm @ 4.8V810mV @ 1µA
-
2.5pF @ 5V500mW0°C ~ 70°C (TJ)Through Hole16-DIP (0.300", 7.62mm)16-PDIP
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