1. Главная
  2. Продукты
  3. Дискретный полупроводник
  4. Транзисторы - полевые транзисторы, МОП-транзисторы - массивы
  5. Продукты

Производители для Транзисторы - полевые транзисторы, МОП-транзисторы - массивы

Advanced Linear Devices, Inc.
Alpha and Omega Semiconductor, Inc.
Central Semiconductor
Comchip Technology
Diodes Incorporated
EPC
GeneSiC Semiconductor
Infineon Technologies
IXYS Corporation
Micro Commercial Components (MCC)
Microchip Technology
Microsemi
Monolithic Power Systems
Nexperia
NXP Semiconductors
ON Semiconductor
Panasonic
Renesas Electronics America
ROHM Semiconductor
Sanken Electric Co., Ltd.
Sanyo Denki
Skyworks Solutions, Inc.
STMicroelectronics
Taiwan Semiconductor
Texas Instruments
Toshiba Semiconductor and Storage
Transphorm
TT Electronics/Optek Technology
Vishay
Wolfspeed
номер части Производитель / Марка Краткое описание Статус деталиТип полевого транзистораФункция FETСлив к источнику напряжения (Vdss)Ток - непрерывный слив (Id) при 25 ° CRds On (Макс.) @ Id, VgsVgs (th) (Max) @ IdЗаряд затвора (Qg) (Макс.) @ VgsВходная емкость (Ciss) (Макс.) @ VdsМощность - макс.Рабочая ТемператураТип монтажаУпаковка / чехолПакет устройств поставщика
DMN63D8LDW-7
 Diodes Incorporated MOSFET 2N-CH 30V 0.22A SOT363 в производстве2 N-Channel (Dual)Logic Level Gate30V220mA2.8 Ohm @ 250mA, 10V1.5V @ 250µA870nC @ 10V22pF @ 25V300mW-55°C ~ 150°C (TJ)SMD Поверхностный монтаж6-TSSOP, SC-88, SOT-363SOT-363
DMN65D8LDW-7
 Diodes Incorporated MOSFET 2N-CH 60V 0.18A SOT363 в производстве2 N-Channel (Dual)Logic Level Gate60V180mA6 Ohm @ 115mA, 10V2V @ 250µA0.87nC @ 10V22pF @ 25V300mW-55°C ~ 150°C (TJ)SMD Поверхностный монтаж6-TSSOP, SC-88, SOT-363SOT-363
2N7002DWQ-7-F
 Diodes Incorporated MOSFET 2N-CH 60V 0.23A SOT363 в производстве2 N-Channel (Dual)Standard60V230mA7.5 Ohm @ 50mA, 5V2V @ 250µA
-
50pF @ 25V310mW-55°C ~ 150°C (TJ)SMD Поверхностный монтаж6-TSSOP, SC-88, SOT-363SOT-363
DMC2990UDJ-7
 Diodes Incorporated MOSFET N/P-CH 20V SOT963 в производствеN and P-ChannelLogic Level Gate20V450mA, 310mA990 mOhm @ 100mA, 4.5V1V @ 250µA0.5nC @ 4.5V27.6pF @ 15V350mW-55°C ~ 150°C (TJ)SMD Поверхностный монтажSOT-963SOT-963
DMN5L06VK-7
 Diodes Incorporated MOSFET 2N-CH 50V 0.28A SOT-563 в производстве2 N-Channel (Dual)Logic Level Gate50V280mA2 Ohm @ 50mA, 5V1V @ 250µA
-
50pF @ 25V250mW-55°C ~ 150°C (TJ)SMD Поверхностный монтажSOT-563, SOT-666SOT-563
BSS8402DW-7-F
 Diodes Incorporated MOSFET N/P-CH 60V/50V SC70-6 в производствеN and P-ChannelLogic Level Gate60V, 50V115mA, 130mA7.5 Ohm @ 50mA, 5V2.5V @ 250µA
-
50pF @ 25V200mW-55°C ~ 150°C (TJ)SMD Поверхностный монтаж6-TSSOP, SC-88, SOT-363SOT-363
DMN2004DMK-7
 Diodes Incorporated MOSFET 2N-CH 20V 0.54A SOT-26 в производстве2 N-Channel (Dual)Logic Level Gate20V540mA550 mOhm @ 540mA, 4.5V1V @ 250µA
-
150pF @ 16V225mW-65°C ~ 150°C (TJ)SMD Поверхностный монтажSOT-23-6SOT-26
DMN3135LVT-7
 Diodes Incorporated MOSFET 2N-CH 30V 3.5A TSOT26 в производстве2 N-Channel (Dual)Logic Level Gate30V3.5A60 mOhm @ 3.1A, 10V2.2V @ 250µA4.1nC @ 4.5V305pF @ 15V840mW-55°C ~ 150°C (TJ)SMD Поверхностный монтажSOT-23-6 Thin, TSOT-23-6TSOT-26
DMN2041LSD-13
 Diodes Incorporated MOSFET 2N-CH 20V 7.63A 8SO в производстве2 N-Channel (Dual)Logic Level Gate20V7.63A28 mOhm @ 6A, 4.5V1.2V @ 250µA15.6nC @ 10V550pF @ 10V1.16W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
DMG4822SSD-13
 Diodes Incorporated MOSFET 2N-CH 30V 10A 8SO в производстве2 N-Channel (Dual)Logic Level Gate30V10A20 mOhm @ 8.5A, 10V3V @ 250µA10.5nC @ 10V478.9pF @ 16V1.42W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
DMC4040SSD-13
 Diodes Incorporated MOSFET N/P-CH 40V 6.8A 8SO в производствеN and P-ChannelLogic Level Gate40V6.8A25 mOhm @ 3A, 10V1.8V @ 250µA37.6nC @ 10V1790pF @ 20V1.8W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
ZXMHC6A07N8TC
 Diodes Incorporated MOSFET 2N/2P-CH 60V 8-SOIC в производстве2 N and 2 P-Channel (H-Bridge)Logic Level Gate60V1.39A, 1.28A250 mOhm @ 1.8A, 10V3V @ 250µA3.2nC @ 10V166pF @ 40V870mW-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOP
ZXMN6A25DN8TA
 Diodes Incorporated MOSFET 2N-CH 60V 3.8A 8-SOIC в производстве2 N-Channel (Dual)Logic Level Gate60V3.8A50 mOhm @ 3.6A, 10V1V @ 250µA (Min)20.4nC @ 10V1063pF @ 30V1.8W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOP
ZXMP6A18DN8TA
 Diodes Incorporated MOSFET 2P-CH 60V 3.7A 8-SOIC в производстве2 P-Channel (Dual)Logic Level Gate60V3.7A55 mOhm @ 3.5A, 10V1V @ 250µA (Min)44nC @ 10V1580pF @ 30V1.8W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOP
DMC2400UV-13
 Diodes Incorporated MOSFET N/P-CH 20V SOT563 в производствеN and P-ChannelStandard20V1.03A, 700mA480 mOhm @ 200mA, 5V900mV @ 250µA0.5nC @ 4.5V37.1pF @ 10V450mW-55°C ~ 150°C (TJ)SMD Поверхностный монтажSOT-563, SOT-666SOT-563
DMN62D0UDW-7
 Diodes Incorporated MOSFET 2N-CH 60V 0.35A в производстве2 N-Channel (Dual)Standard60V350mA2 Ohm @ 100mA, 4.5V1V @ 250µA0.5nC @ 4.5V32pF @ 30V320mW-55°C ~ 150°C (TJ)SMD Поверхностный монтаж6-TSSOP, SC-88, SOT-363SOT-363
DMP3085LSD-13
 Diodes Incorporated MOSFET 2P-CH 30V 3.9A 8SO в производстве2 P-Channel (Dual)Logic Level Gate30V3.9A70 mOhm @ 5.3A, 10V3V @ 250µA11nC @ 10V563pF @ 25V1.1W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
DMN2990UDJ-7
 Diodes Incorporated MOSFET 2N-CH 20V 0.45A SOT-963 в производстве2 N-Channel (Dual)Logic Level Gate20V450mA990 mOhm @ 100mA, 4.5V1V @ 250µA0.5nC @ 4.5V27.6pF @ 16V350mW-55°C ~ 150°C (TJ)SMD Поверхностный монтажSOT-963SOT-963
DMG1026UV-7
 Diodes Incorporated MOSFET 2N-CH 60V 0.41A SOT-563 в производстве2 N-Channel (Dual)Logic Level Gate60V410mA1.8 Ohm @ 500mA, 10V1.8V @ 250µA0.45nC @ 10V32pF @ 25V580mW-55°C ~ 150°C (TJ)SMD Поверхностный монтажSOT-563, SOT-666SOT-563
2N7002VC-7
 Diodes Incorporated MOSFET 2N-CH 60V 0.28A SOT-563 в производстве2 N-Channel (Dual)Standard60V280mA7.5 Ohm @ 50mA, 5V2.5V @ 250µA
-
50pF @ 25V150mW-55°C ~ 150°C (TJ)SMD Поверхностный монтажSOT-563, SOT-666SOT-563
DMN2004VK-7
 Diodes Incorporated MOSFET 2N-CH 20V 0.54A SOT-563 в производстве2 N-Channel (Dual)Logic Level Gate20V540mA550 mOhm @ 540mA, 4.5V1V @ 250µA
-
150pF @ 16V250mW-55°C ~ 150°C (TJ)SMD Поверхностный монтажSOT-563, SOT-666SOT-563
DMP210DUDJ-7
 Diodes Incorporated MOSFET 2P-CH 20V 0.2A SOT-963 в производстве2 P-Channel (Dual)Logic Level Gate20V200mA5.5 Ohm @ 100mA, 4.5V1.15V @ 250µA
-
27.44pF @ 15V330mW-55°C ~ 150°C (TJ)SMD Поверхностный монтажSOT-963SOT-963
BSS84V-7
 Diodes Incorporated MOSFET 2P-CH 50V 0.13A SOT-563 в производстве2 P-Channel (Dual)Logic Level Gate50V130mA10 Ohm @ 100mA, 5V2V @ 1mA
-
45pF @ 25V150mW-55°C ~ 150°C (TJ)SMD Поверхностный монтажSOT-563, SOT-666SOT-563
DMN1029UFDB-7
 Diodes Incorporated MOSFET 2N-CH 12V 5.6A 6UDFN в производстве2 N-Channel (Dual)Standard12V5.6A29 mOhm @ 5A, 4.5V1V @ 250µA19.6nC @ 8V914pF @ 6V1.4W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж6-UDFN Exposed PadU-DFN2020-6 (Type B)
DMN5L06DMK-7
 Diodes Incorporated MOSFET 2N-CH 50V 0.305A SOT-26 в производстве2 N-Channel (Dual)Logic Level Gate50V305mA2 Ohm @ 50mA, 5V1V @ 250µA
-
50pF @ 25V400mW-65°C ~ 150°C (TJ)SMD Поверхностный монтажSOT-23-6SOT-26
DMN601DMK-7
 Diodes Incorporated MOSFET 2N-CH 60V 0.51A SOT26 в производстве2 N-Channel (Dual)Logic Level Gate60V510mA2.4 Ohm @ 200mA, 10V2.5V @ 1mA304nC @ 4.5V50pF @ 25V700mW-55°C ~ 150°C (TJ)SMD Поверхностный монтажSOT-23-6SOT-26
DMN32D2LV-7
 Diodes Incorporated MOSFET 2N-CH 30V 0.4A SOT-563 в производстве2 N-Channel (Dual)Logic Level Gate30V400mA1.2 Ohm @ 100mA, 4V1.2V @ 250µA
-
39pF @ 3V400mW-55°C ~ 150°C (TJ)SMD Поверхностный монтажSOT-563, SOT-666SOT-563
DMG9926USD-13
 Diodes Incorporated MOSFET 2N-CH 20V 8A SOP8L в производстве2 N-Channel (Dual)Logic Level Gate20V8A24 mOhm @ 8.2A, 4.5V900mV @ 250µA8.8nC @ 4.5V867pF @ 15V1.3W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOP
DMG6968UDM-7
 Diodes Incorporated MOSFET 2N-CH 20V 6.5A SOT-26 в производстве2 N-Channel (Dual) Common DrainLogic Level Gate20V6.5A24 mOhm @ 6.5A, 4.5V900mV @ 250µA8.8nC @ 4.5V143pF @ 10V850mW-55°C ~ 150°C (TJ)SMD Поверхностный монтажSOT-23-6SOT-26
DMN61D8LVT-7
 Diodes Incorporated MOSFET 2N-CH 60V 0.63A TSOT26 в производстве2 N-Channel (Dual)Logic Level Gate60V630mA1.8 Ohm @ 150mA, 5V2V @ 1mA0.74nC @ 5V12.9pF @ 12V820mW-55°C ~ 150°C (TJ)SMD Поверхностный монтажSOT-23-6 Thin, TSOT-23-6TSOT-26
DMN3032LFDBQ-7
 Diodes Incorporated MOSFET 2N-CH 30V 6.2A U-DFN2020 в производстве2 N-Channel (Dual)Standard30V6.2A30 mOhm @ 5.8A, 10V2V @ 250µA10.6nC @ 10V500pF @ 15V1W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж6-UDFN Exposed PadU-DFN2020-6 (Type B)
DMN3018SSD-13
 Diodes Incorporated MOSFET 2N-CH 30V 6.7A 8SO в производстве2 N-Channel (Dual)Logic Level Gate30V6.7A22 mOhm @ 10A, 10V2.1V @ 250µA13.2nC @ 10V697pF @ 15V1.5W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
DMN6070SSD-13
 Diodes Incorporated MOSFET 2N-CH 60V 3.3A 8-SO в производстве2 N-Channel (Dual)Logic Level Gate60V3.3A80 mOhm @ 12A, 10V3V @ 250µA12.3nC @ 10V588pF @ 30V1.2W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
DMN3024LSD-13
 Diodes Incorporated MOSFET 2N-CH 30V 6.8A 8SO в производстве2 N-Channel (Dual)Logic Level Gate30V6.8A24 mOhm @ 7A, 10V3V @ 250µA12.9nC @ 10V608pF @ 15V1.8W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
DMC4050SSD-13
 Diodes Incorporated MOSFET N/P-CH 40V 5.3A 8SO в производствеN and P-ChannelLogic Level Gate40V5.3A45 mOhm @ 3A, 10V1.8V @ 250µA37.56nC @ 10V1790.8pF @ 20V1.8W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
DMP4047SSD-13
 Diodes Incorporated MOSFET 2P-CH 40V 5.1A 8SOIC в производстве2 P-Channel (Dual)Logic Level Gate40V5.1A45 mOhm @ 4.4A, 10V3V @ 250µA21.5nC @ 10V1154pF @ 20V1.3W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
DMC4050SSDQ-13
 Diodes Incorporated MOSFET N/P-CH 40V 5.3A 8SO в производствеN and P-Channel ComplementaryStandard40V5.3A45 mOhm @ 3A, 10V1.8V @ 250µA37.56nC @ 10V1790.8pF @ 20V1.8W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
DMP3036SSD-13
 Diodes Incorporated MOSFET 2P-CH 30V 10.6A 8-SO в производстве2 P-Channel (Dual)Logic Level Gate30V10.6A20 mOhm @ 9A, 10V3V @ 250µA16.5nC @ 10V1931pF @ 15V1.2W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
DMP4050SSD-13
 Diodes Incorporated MOSFET 2P-CH 40V 4A 8SO в производстве2 P-Channel (Dual)Standard40V4A50 mOhm @ 6A, 10V3V @ 250µA13.9nC @ 10V674pF @ 20V1.8W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOP
ZXMN6A11DN8TA
 Diodes Incorporated MOSFET 2N-CH 60V 2.5A 8-SOIC в производстве2 N-Channel (Dual)Logic Level Gate60V2.5A120 mOhm @ 2.5A, 10V1V @ 250µA (Min)5.7nC @ 10V330pF @ 40V1.8W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOP
ZXMHC10A07N8TC
 Diodes Incorporated MOSFET 2N/2P-CH 100V 8-SOIC в производстве2 N and 2 P-Channel (H-Bridge)Standard100V800mA, 680mA700 mOhm @ 1.5A, 10V4V @ 250µA2.9nC @ 10V138pF @ 60V870mW-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOP
DMTH4007SPD-13
 Diodes Incorporated MOSFET BVDSS 31V 40V POWERDI506 в производстве2 N-Channel (Dual)Standard40V14.2A8.6 mOhm @ 17A, 10V4V @ 250µA41.9nC @ 10V2026pF @ 30V2.6W-55°C ~ 175°C (TJ)SMD Поверхностный монтаж8-PowerTDFNPowerDI5060-8
ZXMN3A04DN8TA
 Diodes Incorporated MOSFET 2N-CH 30V 6.5A 8-SOIC в производстве2 N-Channel (Dual)Logic Level Gate30V6.5A20 mOhm @ 12.6A, 10V1V @ 250µA (Min)36.8nC @ 10V1890pF @ 15V1.81W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOP
DMN2019UTS-13
 Diodes Incorporated MOSFET 2N-CH 20V 5.4A TSSOP-8 в производстве2 N-Channel (Dual) Common DrainLogic Level Gate20V5.4A18.5 mOhm @ 7A, 10V950mV @ 250µA8.8nC @ 4.5V143pF @ 10V780mW-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-TSSOP (0.173", 4.40mm Width)8-TSSOP
DMN61D8LVTQ-7
 Diodes Incorporated MOSFET 2N-CH 60V 0.63A TSOT26 в производстве2 N-Channel (Dual)Logic Level Gate60V630mA1.8 Ohm @ 150mA, 5V2V @ 1mA0.74nC @ 5V12.9pF @ 12V820mW-55°C ~ 150°C (TJ)SMD Поверхностный монтажSOT-23-6 Thin, TSOT-23-6TSOT-26
DMG8601UFG-7
 Diodes Incorporated MOSFET 2N-CH 20V 6.1A DFN в производстве2 N-Channel (Dual) Common DrainLogic Level Gate20V6.1A23 mOhm @ 6.5A, 4.5V1.05V @ 250µA8.8nC @ 4.5V143pF @ 10V920mW-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-PowerUDFNU-DFN3030-8
DMT3020LFDB-7
 Diodes Incorporated MOSFET 2N-CHA 30V 7.7A DFN2020 в производстве2 N-Channel (Dual)Standard30V7.7A20 mOhm @ 9A, 10V3V @ 250µA7nC @ 10V393pF @ 15V700mW-55°C ~ 150°C (TJ)SMD Поверхностный монтаж6-UDFN Exposed PadU-DFN2020-6 (Type B)
DMP2066LSD-13
 Diodes Incorporated MOSFET 2P-CH 20V 5.8A 8-SOIC в производстве2 P-Channel (Dual)Logic Level Gate20V5.8A40 mOhm @ 4.6A, 4.5V1.2V @ 250µA10.1nC @ 4.5V820pF @ 15V2W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOP
DMN1033UCB4-7
 Diodes Incorporated MOSFET 2N-CH 12V U-WLB1818-4 в производстве2 N-Channel (Dual) Common DrainLogic Level Gate
-
-
-
-
37nC @ 4.5V
-
1.45W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-UFBGA, WLBGAU-WLB1818-4
DMN2011UFX-7
 Diodes Incorporated MOSFET 2N-CH 20V 12.2A DFN2050-4 в производстве2 N-Channel (Dual)Standard20V12.2A (Ta)9.5 mOhm @ 10A, 4.5V1V @ 250µA56nC @ 10V2248pF @ 10V2.1W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-VFDFN Exposed PadV-DFN2050-4
  1. 1
  2. 2
  3. 3
  4. 4
  5. 5
  6. 6
  7. 7
  8. 8
  9. 9
Email: sales@icchip.ru
Copyright © 2019 ICCHIP ® Все права защищены