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Производители для Память

Adesto Technologies
AKM Semiconductor
Alliance Memory, Inc.
Cypress Semiconductor
Everspin Technologies, Inc.
Fremont Micro Devices
Fujitsu Electronics America, Inc.
GigaDevice
Honeywell Aerospace
Insignis Technology Corporation
Integrated Device Technology, Inc.
Integrated Silicon Solution, Inc. (ISSI)
Intel
Intersil (Renesas Electronics America)
Macronix
Maxim Integrated
Microchip Technology
Micron Technology
Nuvoton Technology Corporation America
NXP Semiconductors
ON Semiconductor
Panasonic
Parallax, Inc.
Qimonda
Renesas Electronics America
ROHM Semiconductor
SanDisk
Sharp Microelectronics
ABLIC U.S.A. Inc.
Socle Technology Corporation
STMicroelectronics
Swissbit
Texas Instruments
Toshiba Memory America, Inc.
Viking Technology
Winbond Electronics
номер части Производитель / Марка Краткое описание Статус деталиТип памятиФормат памятиТехнологииРазмер памятиЧастота часовВремя цикла записи - слово, страницаВремя доступаИнтерфейс памятиНапряжение - ПоставкаРабочая ТемператураТип монтажаУпаковка / чехолПакет устройств поставщика
DS2227-100
 Maxim Integrated IC NVSRAM 4M PARALLEL 72SIMM устарелыйNon-VolatileNVSRAMNVSRAM (Non-Volatile SRAM)4Mb (128K x 32, 256K x 16, 512K x 8)
-
100ns100nsParallel4.5 V ~ 5.5 V0°C ~ 70°C (TA)Socket72-SIMM72-SIMM
DS2227-070
 Maxim Integrated IC NVSRAM 4M PARALLEL 72SIMM устарелыйNon-VolatileNVSRAMNVSRAM (Non-Volatile SRAM)4Mb (128K x 32, 256K x 16, 512K x 8)
-
70ns70nsParallel4.5 V ~ 5.5 V0°C ~ 70°C (TA)Socket72-SIMM72-SIMM
DS2229-85
 Maxim Integrated IC NVSRAM 8M PARALLEL 80SIMM устарелыйNon-VolatileNVSRAMNVSRAM (Non-Volatile SRAM)8Mb (512K x 16)
-
85ns85nsParallel4.5 V ~ 5.5 V0°C ~ 70°C (TA)Socket80-SIMM80-SIMM
DS1265Y-100
 Maxim Integrated IC NVSRAM 8M PARALLEL 36EDIP устарелыйNon-VolatileNVSRAMNVSRAM (Non-Volatile SRAM)8Mb (1M x 8)
-
100ns100nsParallel4.5 V ~ 5.5 V0°C ~ 70°C (TA)Through Hole36-DIP Module (0.600", 15.24mm)36-EDIP
DS1265AB-100
 Maxim Integrated IC NVSRAM 8M PARALLEL 36EDIP устарелыйNon-VolatileNVSRAMNVSRAM (Non-Volatile SRAM)8Mb (1M x 8)
-
100ns100nsParallel4.75 V ~ 5.25 V0°C ~ 70°C (TA)Through Hole36-DIP Module (0.600", 15.24mm)36-EDIP
DS1265W-150
 Maxim Integrated IC NVSRAM 8M PARALLEL 36EDIP устарелыйNon-VolatileNVSRAMNVSRAM (Non-Volatile SRAM)8Mb (1M x 8)
-
150ns150nsParallel3 V ~ 3.6 V0°C ~ 70°C (TA)Through Hole36-DIP Module (0.600", 15.24mm)36-EDIP
DS1265W-100
 Maxim Integrated IC NVSRAM 8M PARALLEL 36EDIP устарелыйNon-VolatileNVSRAMNVSRAM (Non-Volatile SRAM)8Mb (1M x 8)
-
100ns100nsParallel3 V ~ 3.6 V0°C ~ 70°C (TA)Through Hole36-DIP Module (0.600", 15.24mm)36-EDIP
DS1265AB-70
 Maxim Integrated IC NVSRAM 8M PARALLEL 36EDIP устарелыйNon-VolatileNVSRAMNVSRAM (Non-Volatile SRAM)8Mb (1M x 8)
-
70ns70nsParallel4.75 V ~ 5.25 V0°C ~ 70°C (TA)Through Hole36-DIP Module (0.600", 15.24mm)36-EDIP
DS1265Y-70
 Maxim Integrated IC NVSRAM 8M PARALLEL 36EDIP устарелыйNon-VolatileNVSRAMNVSRAM (Non-Volatile SRAM)8Mb (1M x 8)
-
70ns70nsParallel4.5 V ~ 5.5 V0°C ~ 70°C (TA)Through Hole36-DIP Module (0.600", 15.24mm)36-EDIP
DS1250BL-100
 Maxim Integrated IC NVSRAM 4M PARALLEL 34LPM устарелыйNon-VolatileNVSRAMNVSRAM (Non-Volatile SRAM)4Mb (512K x 8)
-
100ns100nsParallel4.75 V ~ 5.25 V0°C ~ 70°C (TA)SMD Поверхностный монтаж34-LPM34-LPM
DS1250YL-100
 Maxim Integrated IC NVSRAM 4M PARALLEL 34LPM устарелыйNon-VolatileNVSRAMNVSRAM (Non-Volatile SRAM)4Mb (512K x 8)
-
100ns100nsParallel4.5 V ~ 5.5 V0°C ~ 70°C (TA)SMD Поверхностный монтаж34-LPM34-LPM
DS1265Y-70IND
 Maxim Integrated IC NVSRAM 8M PARALLEL 36EDIP устарелыйNon-VolatileNVSRAMNVSRAM (Non-Volatile SRAM)8Mb (1M x 8)
-
70ns70nsParallel4.5 V ~ 5.5 V-40°C ~ 85°C (TA)Through Hole36-DIP Module (0.600", 15.24mm)36-EDIP
DS1265AB-70IND
 Maxim Integrated IC NVSRAM 8M PARALLEL 36EDIP устарелыйNon-VolatileNVSRAMNVSRAM (Non-Volatile SRAM)8Mb (1M x 8)
-
70ns70nsParallel4.75 V ~ 5.25 V-40°C ~ 85°C (TA)Through Hole36-DIP Module (0.600", 15.24mm)36-EDIP
DS1250BL-70
 Maxim Integrated IC NVSRAM 4M PARALLEL 34LPM устарелыйNon-VolatileNVSRAMNVSRAM (Non-Volatile SRAM)4Mb (512K x 8)
-
70ns70nsParallel4.75 V ~ 5.25 V0°C ~ 70°C (TA)SMD Поверхностный монтаж34-LPM34-LPM
DS1250YL-70
 Maxim Integrated IC NVSRAM 4M PARALLEL 34LPM устарелыйNon-VolatileNVSRAMNVSRAM (Non-Volatile SRAM)4Mb (512K x 8)
-
70ns70nsParallel4.5 V ~ 5.5 V0°C ~ 70°C (TA)SMD Поверхностный монтаж34-LPM34-LPM
DS1250YL-70-IND
 Maxim Integrated IC NVSRAM 4M PARALLEL 34LPM устарелыйNon-VolatileNVSRAMNVSRAM (Non-Volatile SRAM)4Mb (512K x 8)
-
70ns70nsParallel4.5 V ~ 5.5 V-40°C ~ 85°C (TA)SMD Поверхностный монтаж34-LPM34-LPM
DS1250BL-70-IND
 Maxim Integrated IC NVSRAM 4M PARALLEL 34LPM устарелыйNon-VolatileNVSRAMNVSRAM (Non-Volatile SRAM)4Mb (512K x 8)
-
70ns70nsParallel4.75 V ~ 5.25 V-40°C ~ 85°C (TA)SMD Поверхностный монтаж34-LPM34-LPM
DS1350YL-100
 Maxim Integrated IC NVSRAM 4M PARALLEL 34LPM устарелыйNon-VolatileNVSRAMNVSRAM (Non-Volatile SRAM)4Mb (512K x 8)
-
100ns100nsParallel4.5 V ~ 5.5 V0°C ~ 70°C (TA)SMD Поверхностный монтаж34-LPM34-LPM
DS1350BL-100
 Maxim Integrated IC NVSRAM 4M PARALLEL 34LPM устарелыйNon-VolatileNVSRAMNVSRAM (Non-Volatile SRAM)4Mb (512K x 8)
-
100ns100nsParallel4.75 V ~ 5.25 V0°C ~ 70°C (TA)SMD Поверхностный монтаж34-LPM34-LPM
DS1350BL-70
 Maxim Integrated IC NVSRAM 4M PARALLEL 34LPM устарелыйNon-VolatileNVSRAMNVSRAM (Non-Volatile SRAM)4Mb (512K x 8)
-
70ns70nsParallel4.75 V ~ 5.25 V0°C ~ 70°C (TA)SMD Поверхностный монтаж34-LPM34-LPM
DS1350YL-70
 Maxim Integrated IC NVSRAM 4M PARALLEL 34LPM устарелыйNon-VolatileNVSRAMNVSRAM (Non-Volatile SRAM)4Mb (512K x 8)
-
70ns70nsParallel4.5 V ~ 5.5 V0°C ~ 70°C (TA)SMD Поверхностный монтаж34-LPM34-LPM
DS1350BL-70IND
 Maxim Integrated IC NVSRAM 4M PARALLEL 34LPM устарелыйNon-VolatileNVSRAMNVSRAM (Non-Volatile SRAM)4Mb (512K x 8)
-
70ns70nsParallel4.75 V ~ 5.25 V-40°C ~ 85°C (TA)SMD Поверхностный монтаж34-LPM34-LPM
DS1350YL-70IND
 Maxim Integrated IC NVSRAM 4M PARALLEL 34LPM устарелыйNon-VolatileNVSRAMNVSRAM (Non-Volatile SRAM)4Mb (512K x 8)
-
70ns70nsParallel4.5 V ~ 5.5 V-40°C ~ 85°C (TA)SMD Поверхностный монтаж34-LPM34-LPM
DS1270Y-100
 Maxim Integrated IC NVSRAM 16M PARALLEL 36EDIP устарелыйNon-VolatileNVSRAMNVSRAM (Non-Volatile SRAM)16Mb (2M x 8)
-
100ns100nsParallel4.5 V ~ 5.5 V0°C ~ 70°C (TA)Through Hole36-DIP Module (0.600", 15.24mm)36-EDIP
DS1270W-150
 Maxim Integrated IC NVSRAM 16M PARALLEL 36EDIP устарелыйNon-VolatileNVSRAMNVSRAM (Non-Volatile SRAM)16Mb (2M x 8)
-
150ns150nsParallel3 V ~ 3.6 V0°C ~ 70°C (TA)Through Hole36-DIP Module (0.600", 15.24mm)36-EDIP
DS1270AB-100
 Maxim Integrated IC NVSRAM 16M PARALLEL 36EDIP устарелыйNon-VolatileNVSRAMNVSRAM (Non-Volatile SRAM)16Mb (2M x 8)
-
100ns100nsParallel4.75 V ~ 5.25 V0°C ~ 70°C (TA)Through Hole36-DIP Module (0.600", 15.24mm)36-EDIP
DS1270AB-70
 Maxim Integrated IC NVSRAM 16M PARALLEL 36EDIP устарелыйNon-VolatileNVSRAMNVSRAM (Non-Volatile SRAM)16Mb (2M x 8)
-
70ns70nsParallel4.75 V ~ 5.25 V0°C ~ 70°C (TA)Through Hole36-DIP Module (0.600", 15.24mm)36-EDIP
DS1270Y-70
 Maxim Integrated IC NVSRAM 16M PARALLEL 36EDIP устарелыйNon-VolatileNVSRAMNVSRAM (Non-Volatile SRAM)16Mb (2M x 8)
-
70ns70nsParallel4.5 V ~ 5.5 V0°C ~ 70°C (TA)Through Hole36-DIP Module (0.600", 15.24mm)36-EDIP
DS1270W-100
 Maxim Integrated IC NVSRAM 16M PARALLEL 36EDIP устарелыйNon-VolatileNVSRAMNVSRAM (Non-Volatile SRAM)16Mb (2M x 8)
-
100ns100nsParallel3 V ~ 3.6 V0°C ~ 70°C (TA)Through Hole36-DIP Module (0.600", 15.24mm)36-EDIP
DS1270AB-70IND
 Maxim Integrated IC NVSRAM 16M PARALLEL 36EDIP устарелыйNon-VolatileNVSRAMNVSRAM (Non-Volatile SRAM)16Mb (2M x 8)
-
70ns70nsParallel4.75 V ~ 5.25 V-40°C ~ 85°C (TA)Through Hole36-DIP Module (0.600", 15.24mm)36-EDIP
DS1270Y-70IND
 Maxim Integrated IC NVSRAM 16M PARALLEL 36EDIP устарелыйNon-VolatileNVSRAMNVSRAM (Non-Volatile SRAM)16Mb (2M x 8)
-
70ns70nsParallel4.5 V ~ 5.5 V-40°C ~ 85°C (TA)Through Hole36-DIP Module (0.600", 15.24mm)36-EDIP
DS1200
 Maxim Integrated IC SRAM 1K I2C 4MHZ 10DIP устарелыйVolatileSRAMSRAM1Kb (1K x 1)4MHz
-
-
I²C4.5 V ~ 5.5 V0°C ~ 70°C (TA)Through Hole10-DIP (0.300", 7.62mm)10-PDIP
DS2506S
 Maxim Integrated IC EPROM 64K 1WIRE 8SO в производствеNon-VolatileEPROMEPROM - OTP64Kb (64K x 1)
-
-
2µs1-Wire®
-
-40°C ~ 85°C (TA)SMD Поверхностный монтаж8-SOIC (0.209", 5.30mm Width)8-SO
DS2506
 Maxim Integrated IC EPROM 64K 1WIRE TO92-3 в производствеNon-VolatileEPROMEPROM - OTP64Kb (64K x 1)
-
-
2µs1-Wire®
-
-40°C ~ 85°C (TA)Through HoleTO-226-3, TO-92-3 Long BodyTO-92-3
DS2016-150
 Maxim Integrated IC SRAM 16K PARALLEL 24DIP устарелыйVolatileSRAMSRAM16Kb (2K x 8)
-
150ns150nsParallel2.7 V ~ 5.5 V-40°C ~ 85°C (TA)Through Hole24-DIP (0.600", 15.24mm)24-PDIP
DS2433S
 Maxim Integrated IC EEPROM 4K 1WIRE 8SO в производствеNon-VolatileEEPROMEEPROM4Kb (256 x 16)
-
-
2µs1-Wire®
-
-40°C ~ 85°C (TA)SMD Поверхностный монтаж8-SOIC (0.209", 5.30mm Width)8-SO
DS2502P
 Maxim Integrated IC EPROM 1K 1WIRE 6TSOC устарелыйNon-VolatileEPROMEPROM - OTP1Kb (1K x 1)
-
-
15µs1-Wire®
-
-40°C ~ 85°C (TA)SMD Поверхностный монтаж6-LSOJ (0.148", 3.76mm Width)6-TSOC
DS2502P-E64
 Maxim Integrated IC EPROM 1K 1WIRE 6TSOC в производствеNon-VolatileEPROMEPROM - OTP1Kb (1K x 1)
-
-
15µs1-Wire®
-
-40°C ~ 85°C (TA)SMD Поверхностный монтаж6-LSOJ (0.148", 3.76mm Width)6-TSOC
DS2502-E64
 Maxim Integrated IC EPROM 1K 1WIRE TO92-3 в производствеNon-VolatileEPROMEPROM - OTP1Kb (1K x 1)
-
-
15µs1-Wire®
-
-40°C ~ 85°C (TA)Through HoleTO-226-3, TO-92-3 (TO-226AA)TO-92-3
DS2502
 Maxim Integrated IC EPROM 1K 1WIRE TO92-3 в производствеNon-VolatileEPROMEPROM - OTP1Kb (1K x 1)
-
-
15µs1-Wire®
-
-40°C ~ 85°C (TA)Through HoleTO-226-3, TO-92-3 (TO-226AA)TO-92-3
DS2502/T&R
 Maxim Integrated IC EPROM 1K 1WIRE TO92-3 устарелыйNon-VolatileEPROMEPROM - OTP1Kb (1K x 1)
-
-
15µs1-Wire®
-
-40°C ~ 85°C (TA)Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92-3
DS2502/T&R/SL
 Maxim Integrated IC EPROM 1K 1WIRE TO92-3 устарелыйNon-VolatileEPROMEPROM - OTP1Kb (1K x 1)
-
-
15µs1-Wire®
-
-40°C ~ 85°C (TA)Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92-3
DS2502P/T&R
 Maxim Integrated IC EPROM 1K 1WIRE 6TSOC устарелыйNon-VolatileEPROMEPROM - OTP1Kb (1K x 1)
-
-
15µs1-Wire®
-
-40°C ~ 85°C (TA)SMD Поверхностный монтаж6-LSOJ (0.148", 3.76mm Width)6-TSOC
DS2430A/T&R
 Maxim Integrated IC EEPROM 256 1WIRE TO92-3 устарелыйNon-VolatileEEPROMEEPROM256b (32 x 8)
-
-
15µs1-Wire®
-
-40°C ~ 85°C (TA)Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92-3
DS2502S/T&R
 Maxim Integrated IC EPROM 1K 1WIRE 8SOIC устарелыйNon-VolatileEPROMEPROM - OTP1Kb (1K x 1)
-
-
15µs1-Wire®
-
-40°C ~ 85°C (TA)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
DS2430AX-S/T&R
 Maxim Integrated IC EEPROM 256 1WIRE 4FLIPCHIP устарелыйNon-VolatileEEPROMEEPROM256b (32 x 8)
-
-
15µs1-Wire®
-
-40°C ~ 85°C (TA)SMD Поверхностный монтаж4-UBGA, FCBGA4-FlipChip (2.39x1.73)
DS2505P/T&R
 Maxim Integrated IC EPROM 16K 1WIRE 6TSOC устарелыйNon-VolatileEPROMEPROM - OTP16Kb (16K x 1)
-
-
15µs1-Wire®
-
-40°C ~ 85°C (TA)SMD Поверхностный монтаж6-LSOJ (0.148", 3.76mm Width)6-TSOC
DS2505/T&R
 Maxim Integrated IC EPROM 16K 1WIRE TO92-3 устарелыйNon-VolatileEPROMEPROM - OTP16Kb (16K x 1)
-
-
15µs1-Wire®
-
-40°C ~ 85°C (TA)Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92-3
DS2433X-S/T&R
 Maxim Integrated IC EEPROM 4K 1WIRE 6FLIPCHIP устарелыйNon-VolatileEEPROMEEPROM4Kb (256 x 16)
-
-
2µs1-Wire®
-
-40°C ~ 85°C (TA)SMD Поверхностный монтаж6-VBGA, FCBGA6-FlipChip (2.82x2.54)
DS2433Y-Z01/T&R
 Maxim Integrated IC EEPROM 4K 1WIRE 8SOIC устарелыйNon-VolatileEEPROMEEPROM4Kb (256 x 16)
-
-
2µs1-Wire®
-
-40°C ~ 85°C (TA)SMD Поверхностный монтаж8-SOIC (0.209", 5.30mm Width)8-SOIC
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