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Microsemi Corporation |
DIODE SCHOTTKY 20V 1A POWERMITE1 |
в производстве | Schottky | 20V | 1A | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400µA @ 20V | - | SMD Поверхностный монтаж | DO-216AA | Powermite 1 (DO216-AA) | -55°C ~ 125°C |
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Microsemi Corporation |
DIODE SCHOTTKY 40V 1A POWERMITE1 |
в производстве | Schottky | 40V | 1A | 550mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 40V | 60pF @ 5V, 1MHz | SMD Поверхностный монтаж | DO-216AA | Powermite 1 (DO216-AA) | -55°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 50V 2.5A DO216 |
в производстве | Standard | 50V | 2.5A | 975mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 2µA @ 50V | - | SMD Поверхностный монтаж | DO-216AA | DO-216 | -55°C ~ 150°C |
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Microsemi Corporation |
DIODE SCHOTTKY 15V 1A DO214AC |
в производстве | Schottky | 15V | 1A | 220mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10mA @ 15V | - | SMD Поверхностный монтаж | DO-214AC, SMA | DO-214AC | -55°C ~ 150°C |
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Microsemi Corporation |
DIODE SCHOTTKY 100V 5A POWERMITE |
в производстве | Schottky | 100V | 5A | 810mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 100V | 150pF @ 4V, 1MHz | SMD Поверхностный монтаж | Powermite®3 | Powermite 3 | -55°C ~ 125°C |
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Microsemi Corporation |
DIODE SCHOTTKY 40V 8A POWERMITE3 |
в производстве | Schottky | 40V | 8A | 450mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 40V | - | SMD Поверхностный монтаж | Powermite®3 | Powermite 3 | -55°C ~ 125°C |
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Microsemi Corporation |
DIODE GEN PURP 75V 200MA DO35 |
в производстве | Standard | 75V | 200mA | 1.2V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 20ns | 500nA @ 75V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 75V 200MA DO213AA |
в производстве | Standard | 75V | 200mA | 1.2V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 20ns | 500nA @ 75V | - | SMD Поверхностный монтаж | DO-213AA (Glass) | DO-213AA | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 400V 400MA DO35 |
в производстве | Standard | 400V | 400mA | 1V @ 400mA | Standard Recovery >500ns, > 200mA (Io) | - | 50nA @ 400V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 1KV 40A TO247 |
в производстве | Standard | 1000V | 40A | 3V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 100µA @ 1000V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
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Microsemi Corporation |
DIODE SCHOTTKY 200V 75A TO247 |
в производстве | Schottky | 200V | 75A | 900mV @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 1mA @ 200V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 150°C |
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Microsemi Corporation |
DIODE SCHOTTKY 200V 120A TO247 |
в производстве | Schottky | 200V | 120A | 950mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | 70ns | 2mA @ 200V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 100V 3A AXIAL |
в производстве | Standard | 100V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 100V | 60pF @ 10V, 1MHz | Through Hole | B, Axial | - | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 150V 1A D5A |
в производстве | Standard | 150V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 150V | 25pF @ 10V, 1MHz | SMD Поверхностный монтаж | SQ-MELF, A | D-5A | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 150V 3A B-MELF |
в производстве | Standard | 150V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 50V | 60pF @ 10V, 1MHz | SMD Поверхностный монтаж | SQ-MELF, B | B, SQ-MELF | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 75V 300MA D5D |
в производстве | Standard | 75V | 300mA | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 5ns | 500nA @ 75V | 5pF @ 0V, 1MHz | SMD Поверхностный монтаж | SQ-MELF, D | D-5D | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE SCHOTTKY 40V 3A B-MELF |
в производстве | Schottky | 40V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100mA @ 40V | - | SMD Поверхностный монтаж | SQ-MELF, B | B, SQ-MELF | -65°C ~ 125°C |
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Microsemi Corporation |
DIODE SCHOTTKY 20V 1A POWERMITE1 |
в производстве | Schottky | 20V | 1A | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | SMD Поверхностный монтаж | DO-216AA | Powermite 1 (DO216-AA) | -55°C ~ 150°C |
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Microsemi Corporation |
DIODE SCHOTTKY 100V 3A POWERMITE |
в производстве | Schottky | 100V | 3A | 760mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 100V | 85pF @ 4V, 1MHz | SMD Поверхностный монтаж | Powermite®3 | Powermite 3 | -55°C ~ 125°C |
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Microsemi Corporation |
DIODE SCHOTTKY 15V 1A POWERMITE |
в производстве | Schottky | 15V | 1A | 220mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10mA @ 15V | 150pF @ 5V, 1MHz | SMD Поверхностный монтаж | DO-216AA | Powermite | -55°C ~ 150°C |
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Microsemi Corporation |
DIODE SCHOTTKY 60V 7A POWERMITE3 |
в производстве | Schottky | 60V | 7A | 600mV @ 7A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | 375pF @ 4V, 1MHz | SMD Поверхностный монтаж | Powermite®3 | Powermite 3 | -55°C ~ 125°C |
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Microsemi Corporation |
DIODE GEN PURP 225V 400MA DO35 |
в производстве | Standard | 225V | 400mA | 1V @ 400mA | Standard Recovery >500ns, > 200mA (Io) | - | 50nA @ 225V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 600V 40A TO247 |
в производстве | Standard | 600V | 40A | 2.4V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 25µA @ 600V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 600V 30A TO247 |
в производстве | Standard | 600V | 30A | 1.8V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 85ns | 250µA @ 600V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 600V 400MA DO35 |
в производстве | Standard | 600V | 400mA | 1V @ 400mA | Standard Recovery >500ns, > 200mA (Io) | - | 50nA @ 600V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 600V 75A TO247 |
в производстве | Standard | 600V | 75A | 2.5V @ 75A | Fast Recovery =< 500ns, > 200mA (Io) | 31ns | 25µA @ 600V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 1KV 30A TO247 |
в производстве | Standard | 1000V | 30A | 2.3V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 290ns | 250µA @ 1000V | - | Through Hole | TO-247-2 | TO-247 | -55°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 600V 60A TO247 |
в производстве | Standard | 600V | 60A | 1.8V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 130ns | 250µA @ 600V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 400V 1A AXIAL |
в производстве | Standard | 400V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 400V | - | Through Hole | A, Axial | - | -65°C ~ 200°C |
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Microsemi Corporation |
DIODE GEN PURP 800V 1A AXIAL |
в производстве | Standard | 800V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 800V | - | Through Hole | A, Axial | - | -65°C ~ 200°C |
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Microsemi Corporation |
DIODE GEN PURP 1KV 60A TO247 |
в производстве | Standard | 1000V | 60A | 2.5V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 280ns | 250µA @ 1000V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
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Microsemi Corporation |
DIODE SCHOTTKY 20V 75MA DO35 |
в производстве | Schottky | 20V | 75mA | 1V @ 35mA | Small Signal =< 200mA (Io), Any Speed | - | 150nA @ 16V | 2pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | -65°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 50V 1A AXIAL |
в производстве | Standard | 50V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 50V | 25pF @ 10V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE SCHOTTKY 70V 33MA DO35 |
в производстве | Schottky | 70V | 33mA | 1V @ 15mA | Small Signal =< 200mA (Io), Any Speed | - | 200nA @ 50V | 2pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | -65°C ~ 150°C |
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Microsemi Corporation |
DIODE SCHOTTKY 45V 1A DO213AB |
в производстве | Schottky | 45V | 1A | 490mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 45V | 70pF @ 5V, 1MHz | SMD Поверхностный монтаж | DO-213AB, MELF | DO-213AB | -65°C ~ 125°C |
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Microsemi Corporation |
DIODE SCHOTTKY 1.2KV 43A TO247 |
в производстве | Silicon Carbide Schottky | 1200V | 43A (DC) | 1.8V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 104pF @ 400V, 1MHz | Through Hole | TO-247-2 | TO-247 | -55°C ~ 175°C |
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Microsemi Corporation |
DIODE SCHOTTKY 1.2KV 30A TO247 |
в производстве | Silicon Carbide Schottky | 1200V | 30A (DC) | 1.5V @ 30A | No Recovery Time > 500mA (Io) | 0ns | - | - | Through Hole | TO-247-2 | TO-247 | - |
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Microsemi Corporation |
DIODE GEN PURP 400V 1A AXIAL |
в производстве | Standard | 400V | 1A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | - | Through Hole | A, Axial | - | -55°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 150V 6A AXIAL |
в производстве | Standard | 150V | 6A | 925mV @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 150V | - | Through Hole | B, Axial | - | 175°C (Max) |
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Microsemi Corporation |
DIODE GEN PURP 600V 30A TO247 |
в производстве | Standard | 600V | 30A | 2.4V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 25µA @ 600V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 600V 60A TO247 |
в производстве | Standard | 600V | 60A | 2.4V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 25µA @ 600V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 1.2KV 30A TO247 |
в производстве | Standard | 1200V | 30A | 3.3V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 320ns | 100µA @ 1200V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 600V 1A AXIAL |
в производстве | Standard | 600V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 500nA @ 600V | 25pF @ 12V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 1.2KV 60A TO247 |
в производстве | Standard | 1200V | 60A | 2.5V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 250µA @ 1200V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 200V 1A D5A |
в производстве | Standard | 200V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 200V | - | SMD Поверхностный монтаж | SQ-MELF, A | D-5A | -65°C ~ 200°C |
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Microsemi Corporation |
DIODE GEN PURP 100V 1A D5A |
в производстве | Standard | 100V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 100V | 25pF @ 10V, 1MHz | SMD Поверхностный монтаж | SQ-MELF, A | D-5A | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE SCHOTTKY 50V 33MA DO213AA |
в производстве | Schottky | 50V | 33mA | 410mV @ 1mA | Small Signal =< 200mA (Io), Any Speed | - | 200nA @ 50V | 2pF @ 0V, 1MHz | SMD Поверхностный монтаж | DO-213AA | DO-213AA | -65°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 1KV 60A TO247 |
в производстве | Standard | 1000V | 60A | 3V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 255ns | 100µA @ 1000V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 200V 1A AXIAL |
в производстве | Standard | 200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 200V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 400V 1A D5A |
в производстве | Standard | 400V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 400V | - | SMD Поверхностный монтаж | SQ-MELF, A | D-5A | -65°C ~ 200°C |
