|
|
Renesas Electronics America |
DIODE GEN PURP 600V 30A TO220FP |
Discontinued at - | Standard | 600V | 30A (DC) | 3V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220FP-2L | 150°C (Max) |
|
|
Renesas Electronics America |
DIODE GEN PURP 600V 5A TO252 |
в производстве | Standard | 600V | 5A | 2V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 70ns | 1µA @ 600V | - | SMD Поверхностный монтаж | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 150°C (Max) |
|
|
Renesas Electronics America |
DIODE GEN PURP 600V 10A TO252 |
в производстве | Standard | 600V | 10A | 2.1V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 1µA @ 600V | - | SMD Поверхностный монтаж | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | 150°C (Max) |
|
|
Renesas Electronics America |
DIODE GEN PURP 600V 5A TO220FP |
в производстве | Standard | 600V | 5A | 2V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 70ns | 1µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220FP-2L | 150°C (Max) |
|
|
Renesas Electronics America |
DIODE GEN PURP 600V 10A TO220FP |
Discontinued at - | Standard | 600V | 10A (DC) | 3V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220FP-2L | 150°C (Max) |
|
|
Renesas Electronics America |
DIODE GEN PURP 600V 10A TO220FP |
Discontinued at - | Standard | 600V | 10A | 2.1V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 1µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220FP-2L | 150°C (Max) |
|
|
Renesas Electronics America |
DIODE GEN PURP 600V 20A TO220FP |
Discontinued at - | Standard | 600V | 20A (DC) | 3V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220FP-2L | 150°C (Max) |
|
|
Renesas Electronics America |
DIODE GEN PURP 600V 30A TO220FP |
в производстве | Standard | 600V | 30A | 2V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 1µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220FP-2L | 150°C (Max) |
|
|
Renesas Electronics America |
DIODE SCHOTTKY 600V 10A TO220FP |
в производстве | Schottky | 600V | 10A (DC) | 1.8V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 15ns | 10µA @ 600V | - | SMD Поверхностный монтаж | TO-220-3 Full Pack | TO-220FP | -55°C ~ 150°C |
|
|
Renesas Electronics America |
DIODE SCHOTTKY 600V 15A TO220FP |
в производстве | Schottky | 600V | 15A (DC) | 1.8V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 15ns | 10µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220FP-2L | -55°C ~ 150°C |
|
|
Renesas Electronics America |
DIODE GEN PURP 360V 10A LDPAK |
в производстве | Standard | 360V | 10A (DC) | 1.7V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 360V | - | SMD Поверхностный монтаж | SC-83 | 4-LDPAK | -55°C ~ 150°C |
|
|
Renesas Electronics America |
DIODE GEN PURP 360V 20A TO252 |
в производстве | Standard | 360V | 20A | 1.7V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 1µA @ 360V | - | SMD Поверхностный монтаж | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | -55°C ~ 150°C |
|
|
Renesas Electronics America |
DIODE GEN PURP 430V 10A LDPAK |
в производстве | Standard | 430V | 10A | 1.9V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 430V | - | SMD Поверхностный монтаж | SC-83 | 4-LDPAK | -55°C ~ 150°C |
|
|
Renesas Electronics America |
DIODE GP 430V 10A TO220FP-2L |
в производстве | Standard | 430V | 10A | 1.9V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 430V | - | Through Hole | TO-220-2 Full Pack | TO-220FP-2L | -55°C ~ 150°C |
|
|
Renesas Electronics America |
DIODE GEN PURP 430V 20A TO252 |
в производстве | Standard | 430V | 20A | 1.8V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 430V | - | SMD Поверхностный монтаж | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | -55°C ~ 150°C |
|
|
Renesas Electronics America |
DIODE GEN PURP 430V 20A LDPAK |
в производстве | Standard | 430V | 20A | 1.8V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 430V | - | SMD Поверхностный монтаж | SC-83 | 4-LDPAK | -55°C ~ 150°C |
|
|
Renesas Electronics America |
DIODE GP 430V 20A TO220FP-2L |
в производстве | Standard | 430V | 20A | 1.8V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 430V | - | Through Hole | TO-220-2 Full Pack | TO-220FP-2L | -55°C ~ 150°C |
|
|
Renesas Electronics America |
DIODE GEN PURP 600V 20A TO252 |
в производстве | Standard | 600V | 20A | 3V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 600V | - | SMD Поверхностный монтаж | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | -55°C ~ 150°C |
|
|
Renesas Electronics America |
DIODE GEN PURP 600V 20A LDPAK |
в производстве | Standard | 600V | 20A | 3V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 600V | - | SMD Поверхностный монтаж | SC-83 | 4-LDPAK | -55°C ~ 150°C |
|
|
Renesas Electronics America |
DIODE GEN PURP 600V 20A LDPAK |
в производстве | Standard | 600V | 20A | 3V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 600V | - | SMD Поверхностный монтаж | SC-83 | 4-LDPAK | -55°C ~ 150°C |
|
|
Renesas Electronics America |
DIODE GEN PURP 600V 20A TO220FL |
в производстве | Standard | 600V | 20A | 3V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 600V | - | Through Hole | TO-220-3 Full Pack | TO-220FL | -55°C ~ 150°C |
|
|
Renesas Electronics America |
DIODE GEN PURP 600V 30A LDPAK |
в производстве | Standard | 600V | 30A | 3V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 600V | - | SMD Поверхностный монтаж | SC-83 | 4-LDPAK | -55°C ~ 150°C |
