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Производители для Диоды - выпрямители - одиночные

AVX Corporation
Bourns
Central Semiconductor
Comchip Technology
Sensata Technologies – Crydom
Diodes Incorporated
GeneSiC Semiconductor
Global Power Technologies Group, Inc.
Infineon Technologies
IXYS Corporation
Littelfuse
MACOM Technology Solutions
Micro Commercial Components (MCC)
Microsemi
Nexperia
NXP Semiconductors
ON Semiconductor
Panasonic
Phoenix Contact
Power Integrations
Powerex, Inc.
Renesas Electronics America
ROHM Semiconductor
Sanken Electric Co., Ltd.
Semtech
SMC Diode Solutions
Esterline Connection Technologies
STMicroelectronics
Taiwan Semiconductor
Texas Instruments
Torex Semiconductor
Toshiba Semiconductor and Storage
TT Electronics/Optek Technology
Vishay
WeEn Semiconductors Co., Ltd
Wolfspeed
номер части Производитель / Марка Краткое описание Статус деталиТип диодаНапряжение - Реверс постоянного тока (Vr) (макс.)Текущий - средний отрегулированный (Io)Напряжение - Вперед (Vf) (Макс.) @ ЕслискоростьВремя обратного восстановления (trr)Текущий - обратный утечек @ VrЕмкость @ Vr, FТип монтажаУпаковка / чехолПакет устройств поставщикаРабочая температура - Соединение
1SS352,H3F
 Toshiba Semiconductor and Storage DIODE GEN PURP 80V 100MA SC76-2 в производствеStandard80V100mA1.2V @ 100mASmall Signal =< 200mA (Io), Any Speed4ns500nA @ 80V3pF @ 0V, 1MHzSMD Поверхностный монтажSC-76ASC-76-2125°C (Max)
CUS520,H3F
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 30V 200MA в производствеSchottky30V200mA280mV @ 10mAFast Recovery =< 500ns, > 200mA (Io)
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5µA @ 30V17pF @ 0V, 1MHzSMD Поверхностный монтажSC-76, SOD-323USC125°C (Max)
CUS10S30,H3F
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 30V 1A USC в производствеSchottky30V1A230mV @ 100mAFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 30V135pF @ 0V, 1MHzSMD Поверхностный монтажSC-76, SOD-323USC125°C (Max)
CRS01(TE85L,Q,M)
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 30V 1A SFLAT в производствеSchottky30V1A360mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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1.5mA @ 30V40pF @ 10V, 1MHzSMD Поверхностный монтажSOD-123FS-FLAT (1.6x3.5)-40°C ~ 125°C
CRS04(TE85L,Q,M)
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 40V 1A SFLAT в производствеSchottky40V1A510mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 40V47pF @ 10V, 1MHzSMD Поверхностный монтажSOD-123FS-FLAT (1.6x3.5)-40°C ~ 150°C
CRS08(TE85L,Q,M)
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 30V 1.5A SFLAT в производствеSchottky30V1.5A360mV @ 1.5AFast Recovery =< 500ns, > 200mA (Io)
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1mA @ 30V90pF @ 10V, 1MHzSMD Поверхностный монтажSOD-123FS-FLAT (1.6x3.5)-40°C ~ 125°C
CRH01(TE85L,Q,M)
 Toshiba Semiconductor and Storage DIODE GEN PURP 200V 1A SFLAT в производствеStandard200V1A980mV @ 1AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 200V
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SMD Поверхностный монтажSOD-123FS-FLAT (1.6x3.5)-40°C ~ 150°C
CMS06(TE12L,Q,M)
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 30V 2A MFLAT в производствеSchottky30V2A370mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
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3mA @ 30V130pF @ 10V, 1MHzSMD Поверхностный монтажSOD-128M-FLAT (2.4x3.8)-40°C ~ 125°C
CMS03(TE12L,Q,M)
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 30V 3A MFLAT в производствеSchottky30V3A450mV @ 3AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 30V
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SMD Поверхностный монтажSOD-128M-FLAT (2.4x3.8)-40°C ~ 150°C
CMS05(TE12L,Q,M)
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 30V 5A MFLAT в производствеSchottky30V5A450mV @ 5AFast Recovery =< 500ns, > 200mA (Io)
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800µA @ 30V330pF @ 10V, 1MHzSMD Поверхностный монтажSOD-128M-FLAT (2.4x3.8)-40°C ~ 150°C
CMS04(TE12L,Q,M)
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 30V 5A MFLAT в производствеSchottky30V5A370mV @ 5AFast Recovery =< 500ns, > 200mA (Io)
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8mA @ 30V330pF @ 10V, 1MHzSMD Поверхностный монтажSOD-128M-FLAT (2.4x3.8)-40°C ~ 125°C
CTS520,L3F
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 30V 200MA CST2 в производствеSchottky30V200mA600mV @ 200mAFast Recovery =< 500ns, > 200mA (Io)
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5µA @ 30V16pF @ 0V, 1MHzSMD Поверхностный монтажSOD-882CST2125°C (Max)
1SS389,L3F
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 10V 100MA ESC в производствеSchottky10V100mA500mV @ 100mAFast Recovery =< 500ns, > 200mA (Io)
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20µA @ 10V40pF @ 0V, 1MHzSMD Поверхностный монтажSC-79, SOD-523ESC125°C (Max)
CES388,L3F
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 40V 100MA ESC в производствеSchottky40V100mA600mV @ 100mASmall Signal =< 200mA (Io), Any Speed
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5µA @ 40V25pF @ 0V, 1MHzSMD Поверхностный монтажSC-79, SOD-523ESC125°C (Max)
1SS387CT,L3F
 Toshiba Semiconductor and Storage DIODE GEN PURP 80V 100MA CST2 в производствеStandard80V100mA1.2V @ 100mASmall Signal =< 200mA (Io), Any Speed1.6ns500nA @ 80V0.5pF @ 0V, 1MHzSMD Поверхностный монтажSOD-882CST2150°C (Max)
1SS387,L3F
 Toshiba Semiconductor and Storage DIODE GEN PURP 80V 100MA ESC в производствеStandard80V100mA1.2V @ 100mASmall Signal =< 200mA (Io), Any Speed4ns500nA @ 80V3pF @ 0V, 1MHzSMD Поверхностный монтажSC-79, SOD-523ESC125°C (Max)
1SS427,L3M
 Toshiba Semiconductor and Storage DIODE GEN PURP 80V 100MA SOD923 в производствеStandard80V100mA1.2V @ 100mASmall Signal =< 200mA (Io), Any Speed1.6ns500nA @ 80V0.3pF @ 0V, 1MHzSMD Поверхностный монтажSOD-923SOD-923-55°C ~ 150°C
1SS413,L3M
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 20V 50MA FSC в производствеSchottky20V50mA550mV @ 50mASmall Signal =< 200mA (Io), Any Speed
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500nA @ 20V3.9pF @ 0V, 1MHzSMD Поверхностный монтаж2-SMD, Flat LeadfSC125°C (Max)
1SS416,L3M
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 30V 100MA FSC в производствеSchottky30V100mA500mV @ 100mASmall Signal =< 200mA (Io), Any Speed
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50µA @ 30V15pF @ 0V, 1MHzSMD Поверхностный монтаж2-SMD, Flat LeadfSC125°C (Max)
1SS193,LF
 Toshiba Semiconductor and Storage DIODE GEN PURP 80V 100MA SMINI в производствеStandard80V100mA1.2V @ 100mASmall Signal =< 200mA (Io), Any Speed4ns500nA @ 80V3pF @ 0V, 1MHzSMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3S-Mini125°C (Max)
CTS05S30,L3F
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 30V 500MA CST2 в производствеSchottky30V500mA340mV @ 100mAFast Recovery =< 500ns, > 200mA (Io)
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150µA @ 10V55pF @ 0V, 1MHzSMD Поверхностный монтажSOD-882CST2125°C (Max)
CUS05S40,H3F
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 40V 500MA USC в производствеSchottky40V500mA350mV @ 100mAFast Recovery =< 500ns, > 200mA (Io)
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30µA @ 10V42pF @ 0V, 1MHzSMD Поверхностный монтажSC-76, SOD-323USC125°C (Max)
CUS10F30,H3F
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 30V 1A USC в производствеSchottky30V1A500mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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50µA @ 30V170pF @ 0V, 1MHzSMD Поверхностный монтажSC-76, SOD-323USC125°C (Max)
1SS403,H3F
 Toshiba Semiconductor and Storage DIODE GEN PURP 200V 100MA USC в производствеStandard200V100mA1.2V @ 100mASmall Signal =< 200mA (Io), Any Speed60ns1µA @ 200V3pF @ 0V, 1MHzSMD Поверхностный монтажSC-76, SOD-323USC125°C (Max)
CUS10S40,H3F
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 40V 1A USC в производствеSchottky40V1A400mV @ 500mAFast Recovery =< 500ns, > 200mA (Io)
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150µA @ 40V120pF @ 0V, 1MHzSMD Поверхностный монтажSC-76, SOD-323USC125°C (Max)
CUS15S30,H3F
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 30V 1.5A в производствеSchottky30V1.5A400mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 30V200pF @ 0V, 1MHzSMD Поверхностный монтажSC-76, SOD-323USC125°C (Max)
CCS15S40,L3F
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 40V 1.5A CST2C в производствеSchottky40V1.5A550mV @ 1.5AFast Recovery =< 500ns, > 200mA (Io)
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200µA @ 40V170pF @ 0V, 1MHzSMD Поверхностный монтаж0603 (1608 Metric)CST2C125°C (Max)
CUS15S40,H3F
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 40V 1.5A в производствеSchottky40V1.5A450mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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200µA @ 40V170pF @ 0V, 1MHzSMD Поверхностный монтажSC-76, SOD-323USC125°C (Max)
CRS03(TE85L,Q,M)
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 30V 1A SFLAT в производствеSchottky30V1A450mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 30V40pF @ 10V, 1MHzSMD Поверхностный монтажSOD-123FS-FLAT (1.6x3.5)-40°C ~ 150°C
CRS11(TE85L,Q,M)
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 30V 1A SFLAT в производствеSchottky30V1A360mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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1.5mA @ 30V
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SMD Поверхностный монтажSOD-123FS-FLAT (1.6x3.5)-40°C ~ 125°C
CMS11(TE12L,Q,M)
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 40V 2A MFLAT в производствеSchottky40V2A550mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 40V95pF @ 10V, 1MHzSMD Поверхностный монтажSOD-128M-FLAT (2.4x3.8)-40°C ~ 150°C
CTS521,L3F
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 30V 200MA CST2 в производствеSchottky30V200mA500mV @ 200mAFast Recovery =< 500ns, > 200mA (Io)
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30µA @ 30V25pF @ 0V, 1MHzSMD Поверхностный монтажSOD-882CST2125°C (Max)
CES520,L3F
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 30V 200MA ESC в производствеSchottky30V200mA600mV @ 200mASmall Signal =< 200mA (Io), Any Speed
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5µA @ 30V17pF @ 0V, 1MHzSMD Поверхностный монтажSC-79, SOD-523ESC125°C (Max)
TBAT54,LM
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 30V 140MA SOT23 в производствеSchottky30V140mA580mV @ 100mASmall Signal =< 200mA (Io), Any Speed1.5ns2µA @ 25V
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SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23-3150°C (Max)
1SS413CT,L3F
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 20V 50MA SOD882 в производствеSchottky20V50mA550mV @ 50mASmall Signal =< 200mA (Io), Any Speed
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500nA @ 20V3.9pF @ 0V, 1MHzSMD Поверхностный монтажSOD-882SOD-882-55°C ~ 125°C
DSF01S30SL,L3F
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 30V 100MA SL2 в производствеSchottky30V100mA500mV @ 100mASmall Signal =< 200mA (Io), Any Speed
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50µA @ 30V9.02pF @ 2V, 1MHzSMD Поверхностный монтаж0201 (0603 Metric)SL2125°C (Max)
DSR01S30SL,L3F
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 30V 100MA SL2 в производствеSchottky30V100mA620mV @ 100mASmall Signal =< 200mA (Io), Any Speed
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700nA @ 30V8.2pF @ 0V, 1MHzSMD Поверхностный монтаж0201 (0603 Metric)SL2125°C (Max)
CMF05(TE12L,Q,M)
 Toshiba Semiconductor and Storage DIODE GEN PURP 1KV 500MA MFLAT в производствеStandard1000V500mA2.7V @ 500mAFast Recovery =< 500ns, > 200mA (Io)100ns50µA @ 800V
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SMD Поверхностный монтажSOD-128M-FLAT (2.4x3.8)-40°C ~ 125°C
CMS10(TE12L,Q,M)
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 40V 1A MFLAT в производствеSchottky40V1A550mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 40V50pF @ 10V, 1MHzSMD Поверхностный монтажSOD-128M-FLAT (2.4x3.8)-40°C ~ 150°C
CUS05F30,H3F
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 30V 500MA USC в производствеSchottky30V500mA450mV @ 500mAFast Recovery =< 500ns, > 200mA (Io)
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50µA @ 30V120pF @ 0V, 1MHzSMD Поверхностный монтажSC-76, SOD-323USC
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JDH2S02SL,L3F
 Toshiba Semiconductor and Storage X34 HIGH FREQUENCY SCHOTTKY BARR в производствеSchottky10V10mA (DC)
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Small Signal =< 200mA (Io), Any Speed
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25µA @ 500mV0.25pF @ 200mV, 1MHzSMD Поверхностный монтаж0201 (0603 Metric)SL2125°C (Max)
CUHS10F60,H3F
 Toshiba Semiconductor and Storage SMALL-SIGNAL SCHOTTKY BARRIER DI в производствеSchottky60V1A
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Fast Recovery =< 500ns, > 200mA (Io)
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40µA @ 60V130pF @ 0V, 1MHzSMD Поверхностный монтаж2-SMD, Flat LeadUS2H150°C (Max)
CBS05F30,L3F
 Toshiba Semiconductor and Storage X34 PB-F CST2B SBD DIODE VR30V в производствеSchottky30V500mA
-
Fast Recovery =< 500ns, > 200mA (Io)
-
50µA @ 30V118pF @ 0V, 1MHzSMD Поверхностный монтажSOD-882CST2B125°C (Max)
1SS417,L3M
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 40V 100MA FSC в производствеSchottky40V100mA620mV @ 50mASmall Signal =< 200mA (Io), Any Speed
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5µA @ 40V15pF @ 0V, 1MHzSMD Поверхностный монтаж2-SMD, Flat LeadfSC125°C (Max)
1SS196(TE85L,F)
 Toshiba Semiconductor and Storage DIODE GEN PURP 80V 100MA SC59-3 в производствеStandard80V100mA1.2V @ 100mASmall Signal =< 200mA (Io), Any Speed4ns500nA @ 80V3pF @ 0V, 1MHzSMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SC-59-3125°C (Max)
CUS521,H3F
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 30V 200MA USC в производствеSchottky30V200mA500mV @ 200mASmall Signal =< 200mA (Io), Any Speed
-
30µA @ 30V26pF @ 0V, 1MHzSMD Поверхностный монтажSC-76, SOD-323USC125°C (Max)
1SS394TE85LF
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 10V 100MA SC59 в производствеSchottky10V100mA500mV @ 100mASmall Signal =< 200mA (Io), Any Speed
-
20µA @ 10V40pF @ 0V, 1MHzSMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SC-59125°C (Max)
CES521,L3F
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 30V 200MA ESC в производствеSchottky30V200mA500mV @ 200mASmall Signal =< 200mA (Io), Any Speed
-
30µA @ 30V26pF @ 0V, 1MHzSMD Поверхностный монтажSC-79, SOD-523ESC125°C (Max)
1SS404,H3F
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 20V 300MA USC в производствеSchottky20V300mA450mV @ 300mAFast Recovery =< 500ns, > 200mA (Io)
-
50µA @ 20V46pF @ 0V, 1MHzSMD Поверхностный монтажSC-76, SOD-323USC125°C (Max)
1SS405,H3F
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 20V 50MA ESC в производствеSchottky20V50mA550mV @ 50mASmall Signal =< 200mA (Io), Any Speed
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500nA @ 20V3.9pF @ 0V, 1MHzSMD Поверхностный монтажSC-79, SOD-523ESC125°C (Max)
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