Производители для Диоды - Зенера - Одноместный
номер части | Производитель / Марка | Краткое описание | Статус детали | Напряжение - Zener (Nom) (Vz) | Толерантность | Мощность - макс. | Импеданс (макс.) (Zzt) | Текущий - обратный утечек @ Vr | Напряжение - Вперед (Vf) (Макс.) @ Если | Рабочая Температура | Тип монтажа | Упаковка / чехол | Пакет устройств поставщика |
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Microsemi Corporation | DIODE S | в производстве | |||||||||||
Microsemi Corporation | DIODE 6.4V 500MW DO213AA | в производстве | 6.4V | ±5% | 500mW | 50 Ohms | 2µA @ 3V | -65°C ~ 175°C | SMD Поверхностный монтаж | DO-213AA (Glass) | DO-213AA | ||
Microsemi Corporation | DIODE 6.4V 500MW DO213AA | в производстве | 6.4V | ±5% | 500mW | 25 Ohms | 2µA @ 3V | -65°C ~ 175°C | SMD Поверхностный монтаж | DO-213AA (Glass) | DO-213AA | ||
Microsemi Corporation | DIODE 68V 5W AXIAL | в производстве | 68V | ±5% | 5W | 50 Ohms | 2µA @ 51.7V | 1.5V @ 1A | -65°C ~ 175°C | Through Hole | E, Axial | ||
Microsemi Corporation | DIODE 16V 5W AXIAL | в производстве | 16V | ±5% | 5W | 3.5 Ohms | 5µA @ 12.2V | 1.5V @ 1A | -65°C ~ 175°C | Through Hole | E, Axial | ||
Microsemi Corporation | DIODE 6.8V 5W AXIAL | в производстве | 6.8V | ±5% | 5W | 1 Ohms | 150µA @ 5.2V | 1.5V @ 1A | -65°C ~ 175°C | Through Hole | E, Axial | ||
Microsemi Corporation | DIODE 9.1V 500MW DO213AA | в производстве | 9.1V | ±5% | 500mW | 200 Ohms | 500nA @ 7V | 1.1V @ 200mA | -65°C ~ 175°C | SMD Поверхностный монтаж | DO-213AA | DO-213AA | |
Microsemi Corporation | DIODE 2.0V 500MW DO35 | в производстве | 2V | ±2% | 500mW | 1250 Ohms | 2.5µA @ 1V | 1.1V @ 200mA | -65°C ~ 175°C | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | |
Microsemi Corporation | DIODE 2.2V 500MW DO35 | в производстве | 2.2V | ±2% | 500mW | 1300 Ohms | 2µA @ 1V | 1.1V @ 200mA | -65°C ~ 175°C | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | |
Microsemi Corporation | DIODE 2.4V 500MW DO35 | в производстве | 2.4V | ±2% | 500mW | 1400 Ohms | 1µA @ 1V | 1.1V @ 200mA | -65°C ~ 175°C | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | |
Microsemi Corporation | DIODE 2.7V 500MW DO35 | в производстве | 2.7V | ±2% | 500mW | 1500 Ohms | 500nA @ 1V | 1.1V @ 200mA | -65°C ~ 175°C | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | |
Microsemi Corporation | DIODE 3.0V 500MW DO35 | в производстве | 3V | ±2% | 500mW | 1600 Ohms | 400nA @ 1V | 1.1V @ 200mA | -65°C ~ 175°C | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | |
Microsemi Corporation | DIODE 3.3V 500MW DO35 | в производстве | 3.3V | ±2% | 500mW | 1650 Ohms | 3.5µA @ 1.5V | 1.1V @ 200mA | -65°C ~ 175°C | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | |
Microsemi Corporation | DIODE 3.6V 500MW DO35 | в производстве | 3.6V | ±2% | 500mW | 1700 Ohms | 3.5µA @ 2V | 1.1V @ 200mA | -65°C ~ 175°C | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | |
Microsemi Corporation | DIODE 3.9V 500MW DO35 | в производстве | 3.9V | ±2% | 500mW | 1650 Ohms | 2.5µA @ 2V | 1.1V @ 200mA | -65°C ~ 175°C | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | |
Microsemi Corporation | DIODE 4.3V 500MW DO35 | в производстве | 4.3V | ±2% | 500mW | 1600 Ohms | 2µA @ 2V | 1.1V @ 200mA | -65°C ~ 175°C | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | |
Microsemi Corporation | DIODE 4.7V 500MW DO35 | в производстве | 4.7V | ±2% | 500mW | 1550 Ohms | 5µA @ 3V | 1.1V @ 200mA | -65°C ~ 175°C | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | |
Microsemi Corporation | DIODE 5.1V 500MW DO35 | в производстве | 5.1V | ±5% | 500mW | 1500 Ohms | 5µA @ 3V | 1.1V @ 200mA | -65°C ~ 175°C | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | |
Microsemi Corporation | DIODE 5.6V 500MW DO35 | в производстве | 5.6V | ±2% | 500mW | 1400 Ohms | 5µA @ 4V | 1.1V @ 200mA | -65°C ~ 175°C | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | |
Microsemi Corporation | DIODE 6.2V 500MW DO35 | в производстве | 6.2V | ±2% | 500mW | 1200 Ohms | 5µA @ 5V | 1.1V @ 200mA | -65°C ~ 175°C | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | |
Microsemi Corporation | DIODE 3.6V 500MW DO213AA | в производстве | 3.6V | ±5% | 500mW | 24 Ohms | 3µA @ 1V | 1.1V @ 200mA | -65°C ~ 175°C | SMD Поверхностный монтаж | DO-213AA (Glass) | DO-213AA | |
Microsemi Corporation | DIODE 3.9V 500MW DO213AA | в производстве | 3.9V | ±5% | 500mW | 23 Ohms | 2µA @ 1V | 1.1V @ 200mA | -65°C ~ 175°C | SMD Поверхностный монтаж | DO-213AA (Glass) | DO-213AA | |
Microsemi Corporation | DIODE 4.3V 500MW DO213AA | в производстве | 4.3V | ±5% | 500mW | 22 Ohms | 2µA @ 1V | 1.1V @ 200mA | -65°C ~ 175°C | SMD Поверхностный монтаж | DO-213AA (Glass) | DO-213AA | |
Microsemi Corporation | DIODE 4.7V 500MW DO213AA | в производстве | 4.7V | ±5% | 500mW | 19 Ohms | 5µA @ 1.5V | 1.1V @ 200mA | -65°C ~ 175°C | SMD Поверхностный монтаж | DO-213AA (Glass) | DO-213AA | |
Microsemi Corporation | DIODE 5.1V 500MW DO213AA | в производстве | 5.1V | ±5% | 500mW | 17 Ohms | 5µA @ 2V | 1.1V @ 200mA | -65°C ~ 175°C | SMD Поверхностный монтаж | DO-213AA (Glass) | DO-213AA | |
Microsemi Corporation | DIODE 6.8V 500MW DO213AA | в производстве | 6.8V | ±5% | 500mW | 5 Ohms | 2µA @ 4V | 1.1V @ 200mA | -65°C ~ 175°C | SMD Поверхностный монтаж | DO-213AA (Glass) | DO-213AA | |
Microsemi Corporation | DIODE 7.5V 500MW DO213AA | в производстве | 7.5V | ±5% | 500mW | 6 Ohms | 2µA @ 5V | 1.1V @ 200mA | -65°C ~ 175°C | SMD Поверхностный монтаж | DO-213AA (Glass) | DO-213AA | |
Microsemi Corporation | DIODE 8.2V 500MW DO213AA | в производстве | 8.2V | ±5% | 500mW | 8 Ohms | 1µA @ 6V | 1.1V @ 200mA | -65°C ~ 175°C | SMD Поверхностный монтаж | DO-213AA (Glass) | DO-213AA | |
Microsemi Corporation | DIODE 9.1V 500MW DO213AA | в производстве | 9.1V | ±5% | 500mW | 10 Ohms | 1µA @ 7V | 1.1V @ 200mA | -65°C ~ 175°C | SMD Поверхностный монтаж | DO-213AA (Glass) | DO-213AA | |
Microsemi Corporation | DIODE 12V 500MW DO213AA | в производстве | 12V | ±5% | 500mW | 30 Ohms | 1µA @ 9V | 1.1V @ 200mA | -65°C ~ 175°C | SMD Поверхностный монтаж | DO-213AA (Glass) | DO-213AA | |
Semtech Corporation | 27V ZENER 1.5W | в производстве | |||||||||||
Microsemi Corporation | DIODE 82V 5W AXIAL | в производстве | 82V | ±5% | 5W | 80 Ohms | 2µA @ 62.2V | 1.5V @ 1A | -65°C ~ 175°C | Through Hole | E, Axial | ||
Microsemi Corporation | DIODE 91V 5W AXIAL | в производстве | 91V | ±5% | 5W | 90 Ohms | 2µA @ 69.2V | 1.5V @ 1A | -65°C ~ 175°C | Through Hole | E, Axial | ||
Microsemi Corporation | DIODE 6.2V 500MW DO35 | в производстве | 6.2V | ±5% | 500mW | 15 Ohms | 2µA @ 3V | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | |||
Microsemi Corporation | DIODE 15V 1.5W DO204AL | в производстве | 15V | ±5% | 1.5W | 9 Ohms | 50nA @ 12V | 1.5V @ 1A | -65°C ~ 175°C | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | |
Microsemi Corporation | DIODE 47V 1.5W DO204AL | в производстве | 47V | ±5% | 1.5W | 50 Ohms | 50nA @ 37.6V | 1.5V @ 1A | -65°C ~ 175°C | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | |
Microsemi Corporation | DIODE 16V 1.5W DO41 | в производстве | 16V | ±5% | 1.5W | 10 Ohms | 50nA @ 12.8V | 1V @ 200mA | -65°C ~ 175°C | Through Hole | DO-204AL, DO-41, Axial | DO-41 | |
Microsemi Corporation | DIODE 18V 1.5W DO41 | в производстве | 18V | ±5% | 1.5W | 11 Ohms | 50nA @ 14.4V | 1V @ 200mA | -65°C ~ 175°C | Through Hole | DO-204AL, DO-41, Axial | DO-41 | |
Microsemi Corporation | DIODE 24V 1.5W DO41 | в производстве | 24V | ±5% | 1.5W | 16 Ohms | 50nA @ 19.2V | 1V @ 200mA | -65°C ~ 175°C | Through Hole | DO-204AL, DO-41, Axial | DO-41 | |
Microsemi Corporation | DIODE 33V 1.5W DO41 | в производстве | 33V | ±5% | 1.5W | 25 Ohms | 50nA @ 26.4V | 1V @ 200mA | -65°C ~ 175°C | Through Hole | DO-204AL, DO-41, Axial | DO-41 | |
Microsemi Corporation | DIODE 43V 1.5W DO41 | в производстве | 43V | ±5% | 1.5W | 40 Ohms | 50nA @ 34.4V | 1V @ 200mA | -65°C ~ 175°C | Through Hole | DO-204AL, DO-41, Axial | DO-41 | |
Microsemi Corporation | DIODE 62V 1.5W DO41 | в производстве | 62V | ±5% | 1.5W | 80 Ohms | 250nA @ 49.6V | 1V @ 200mA | -65°C ~ 175°C | Through Hole | DO-204AL, DO-41, Axial | DO-41 | |
Microsemi Corporation | DIODE 75V 1.5W DO41 | в производстве | 75V | ±5% | 1.5W | 130 Ohms | 250nA @ 60V | 1V @ 200mA | -65°C ~ 175°C | Through Hole | DO-204AL, DO-41, Axial | DO-41 | |
Microsemi Corporation | DIODE 82V 1.5W DO41 | в производстве | 82V | ±5% | 1.5W | 160 Ohms | 250nA @ 65.6V | 1V @ 200mA | -65°C ~ 175°C | Through Hole | DO-204AL, DO-41, Axial | DO-41 | |
Microsemi Corporation | DIODE 100V 1.5W DO41 | в производстве | 100V | ±5% | 1.5W | 250 Ohms | 250nA @ 80V | 1V @ 200mA | -65°C ~ 175°C | Through Hole | DO-204AL, DO-41, Axial | DO-41 | |
Microsemi Corporation | DIODE 12V 5W D5B | в производстве | 12V | ±5% | 5W | 2.5 Ohms | 10µA @ 9.1V | 1.5V @ 1A | -65°C ~ 175°C | Through Hole | E-MELF | D-5B | |
Microsemi Corporation | DIODE 11V 500MW DO213AA | в производстве | 11V | ±5% | 500mW | 9.5 Ohms | 1µA @ 8.4V | 1.1V @ 200mA | -65°C ~ 175°C | SMD Поверхностный монтаж | DO-213AA (Glass) | DO-213AA | |
Microsemi Corporation | DIODE 15V 500MW DO213AA | в производстве | 15V | ±5% | 500mW | 16 Ohms | 500nA @ 11V | 1.1V @ 200mA | -65°C ~ 175°C | SMD Поверхностный монтаж | DO-213AA (Glass) | DO-213AA | |
Microsemi Corporation | DIODE 16V 500MW DO213AA | в производстве | 16V | ±5% | 500mW | 17 Ohms | 500nA @ 12V | 1.1V @ 200mA | -65°C ~ 175°C | SMD Поверхностный монтаж | DO-213AA (Glass) | DO-213AA | |
Microsemi Corporation | DIODE 18V 500MW DO213AA | в производстве | 18V | ±5% | 500mW | 21 Ohms | 500nA @ 14V | 1.1V @ 200mA | -65°C ~ 175°C | SMD Поверхностный монтаж | DO-213AA (Glass) | DO-213AA |