|
ON Semiconductor |
TRANSISTOR PREBIAS NPN 246MW SOT23-3 |
в производстве | NPN - Pre-Biased | 100mA | 50V | 10 kOhms | 10 kOhms | 35 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | - | 246mW | SMD Поверхностный монтаж | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
|
ON Semiconductor |
TRANSISTOR PREBIAS NPN 0.2W SC75 |
в производстве | NPN - Pre-Biased | 100mA | 50V | 4.7 kOhms | 4.7 kOhms | 15 @ 5mA, 10V | 250mV @ 1mA, 10mA | 500nA | - | 200mW | SMD Поверхностный монтаж | SC-75, SOT-416 | SC-75, SOT-416 |
|
ON Semiconductor |
TRANSISTOR PREBIAS NPN 246MW SOT23-3 |
в производстве | NPN - Pre-Biased | 100mA | 50V | 10 kOhms | 10 kOhms | 35 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | - | 246mW | SMD Поверхностный монтаж | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
|
ON Semiconductor |
TRANSISTOR PREBIAS PNP 0.4W SOT23-3 |
в производстве | PNP - Pre-Biased | 100mA | 50V | 47 kOhms | 47 kOhms | 80 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | - | 246mW | SMD Поверхностный монтаж | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
|
ON Semiconductor |
TRANSISTOR PREBIAS NPN 246MW SOT23-3 |
в производстве | NPN - Pre-Biased | 100mA | 50V | 10 kOhms | 47 kOhms | 80 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | - | 246mW | SMD Поверхностный монтаж | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
|
ON Semiconductor |
TRANSISTOR PREBIAS NPN 0.4W SOT23-3 |
в производстве | NPN - Pre-Biased | 100mA | 50V | 10 kOhms | - | 160 @ 5mA, 10V | 250mV @ 1mA, 10mA | 500nA | - | 400mW | SMD Поверхностный монтаж | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
|
ON Semiconductor |
TRANSISTOR PREBIAS PNP 246MW SOT23-3 |
в производстве | PNP - Pre-Biased | 100mA | 50V | 4.7 kOhms | 47 kOhms | 80 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | - | 246mW | SMD Поверхностный монтаж | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
|
ON Semiconductor |
TRANSISTOR PREBIAS NPN 246MW SOT23-3 |
в производстве | NPN - Pre-Biased | 100mA | 50V | 47 kOhms | 47 kOhms | 80 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | - | 246mW | SMD Поверхностный монтаж | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
|
ON Semiconductor |
TRANSISTOR PREBIAS PNP 246MW SOT23-3 |
в производстве | PNP - Pre-Biased | 100mA | 50V | 10 kOhms | 10 kOhms | 35 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | - | 246mW | SMD Поверхностный монтаж | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) |
|
ON Semiconductor |
TRANSISTOR PREBIAS NPN 202MW SC70-3 |
в производстве | NPN - Pre-Biased | 100mA | 50V | 10 kOhms | 47 kOhms | 80 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | - | 202mW | SMD Поверхностный монтаж | SC-70, SOT-323 | SC-70-3 (SOT323) |
|
ON Semiconductor |
TRANSISTOR PREBIAS NPN 200MW SC75 |
в производстве | NPN - Pre-Biased | 100mA | 50V | 47 kOhms | 47 kOhms | 80 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | - | 200mW | SMD Поверхностный монтаж | SC-75, SOT-416 | SC-75, SOT-416 |
|
ON Semiconductor |
TRANSISTOR PREBIAS NPN 200MW SC75 |
в производстве | NPN - Pre-Biased | 100mA | 50V | 4.7 kOhms | 47 kOhms | 80 @ 5mA, 10V | 250mV @ 1mA, 10mA | 500nA | - | 200mW | SMD Поверхностный монтаж | SC-75, SOT-416 | SC-75, SOT-416 |
|
ON Semiconductor |
TRANSISTOR PREBIAS NPN 200MW SC75 |
в производстве | NPN - Pre-Biased | 100mA | 50V | 10 kOhms | 47 kOhms | 80 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | - | 200mW | SMD Поверхностный монтаж | SC-75, SOT-416 | SC-75, SOT-416 |
|
ON Semiconductor |
TRANSISTOR PREBIAS PNP 200MW SC75 |
в производстве | PNP - Pre-Biased | 100mA | 50V | 10 kOhms | 10 kOhms | 35 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | - | 200mW | SMD Поверхностный монтаж | SC-75, SOT-416 | SC-75, SOT-416 |
|
ON Semiconductor |
TRANSISTOR PREBIAS NPN 310MW SC70-3 |
в производстве | NPN - Pre-Biased | 100mA | 50V | 10 kOhms | 10 kOhms | 35 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | - | 202mW | SMD Поверхностный монтаж | SC-70, SOT-323 | SC-70-3 (SOT323) |
|
ON Semiconductor |
TRANSISTOR PREBIAS NPN 230MW SC59 |
в производстве | NPN - Pre-Biased | 100mA | 50V | 10 kOhms | 47 kOhms | 80 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | - | 230mW | SMD Поверхностный монтаж | TO-236-3, SC-59, SOT-23-3 | SC-59 |
|
ON Semiconductor |
TRANSISTOR PREBIAS NPN 202MW SC70-3 |
в производстве | NPN - Pre-Biased | 100mA | 50V | 4.7 kOhms | 47 kOhms | 80 @ 5mA, 10V | 250mV @ 1mA, 10mA | 500nA | - | 202mW | SMD Поверхностный монтаж | SC-70, SOT-323 | SC-70-3 (SOT323) |
|
ON Semiconductor |
TRANSISTOR PREBIAS NPN 338MW SC59 |
в производстве | NPN - Pre-Biased | 100mA | 50V | 10 kOhms | 10 kOhms | 35 @ 5mA, 10V | 250mV @ 300µA, 10mA | 500nA | - | 230mW | SMD Поверхностный монтаж | TO-236-3, SC-59, SOT-23-3 | SC-59 |
|
Rohm Semiconductor |
TRANSISTOR PREBIAS NPN 50V EMT3F |
в производстве | NPN - Pre-Biased | 100mA | 50V | 4.7 kOhms | 47 kOhms | 80 @ 5mA, 10V | 150mV @ 500µA, 5mA | - | 250MHz | 150mW | SMD Поверхностный монтаж | SC-89, SOT-490 | EMT3F (SOT-416FL) |
|
Rohm Semiconductor |
TRANSISTOR PREBIAS NPN 50V 0.15W SC89 |
в производстве | NPN - Pre-Biased | 50mA | 50V | 10 kOhms | 10 kOhms | 35 @ 5mA, 10V | 150mV @ 500µA, 5mA | - | 250MHz | 150mW | SMD Поверхностный монтаж | SC-89, SOT-490 | EMT3F (SOT-416FL) |
|
Nexperia USA Inc. |
TRANSISTOR PREBIAS NPN 200MW SOT323 |
в производстве | NPN - Pre-Biased | 100mA | 50V | 22 kOhms | 22 kOhms | 60 @ 5mA, 5V | 150mV @ 500µA, 10mA | 100nA | 230MHz | 200mW | SMD Поверхностный монтаж | SC-70, SOT-323 | SOT-323-3 |
|
Nexperia USA Inc. |
TRANSISTOR PREBIAS NPN 200MW SOT323 |
в производстве | NPN - Pre-Biased | 100mA | 50V | 22 kOhms | 22 kOhms | 60 @ 5mA, 5V | 150mV @ 500µA, 10mA | 100nA | 230MHz | 200mW | SMD Поверхностный монтаж | SC-70, SOT-323 | SOT-323-3 |
|
Toshiba Semiconductor and Storage |
TRANSISTOR PREBIAS NPN 0.1W USM |
в производстве | NPN - Pre-Biased | 100mA | 50V | 4.7 kOhms | 4.7 kOhms | 30 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 250MHz | 100mW | SMD Поверхностный монтаж | SC-70, SOT-323 | USM |
|
Rohm Semiconductor |
TRANSISTOR PREBIAS NPN 200MW SMT3 |
в производстве | NPN - Pre-Biased | 50mA | 50V | 10 kOhms | 10 kOhms | 30 @ 5mA, 5V | 300mV @ 500µA, 10mA | 500nA | 250MHz | 200mW | SMD Поверхностный монтаж | TO-236-3, SC-59, SOT-23-3 | SMT3 |
|
Rohm Semiconductor |
TRANSISTOR PREBIAS NPN 200MW SMT3 |
в производстве | NPN - Pre-Biased | 100mA | 50V | 10 kOhms | 47 kOhms | 68 @ 5mA, 5V | 300mV @ 250µA, 5mA | 500nA | 250MHz | 200mW | SMD Поверхностный монтаж | TO-236-3, SC-59, SOT-23-3 | SMT3 |
|
Rohm Semiconductor |
TRANSISTOR PREBIAS NPN 200MW SMT3 |
в производстве | NPN - Pre-Biased | 100mA | 50V | 47 kOhms | 47 kOhms | 68 @ 5mA, 5V | 300mV @ 500µA, 10mA | 500nA | 250MHz | 200mW | SMD Поверхностный монтаж | TO-236-3, SC-59, SOT-23-3 | SMT3 |
|
Rohm Semiconductor |
TRANSISTOR PREBIAS NPN 200MW UMT3 |
устарелый | NPN - Pre-Biased | 100mA | 50V | 4.7 kOhms | 47 kOhms | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 250MHz | 200mW | SMD Поверхностный монтаж | SC-70, SOT-323 | UMT3 |
|
Rohm Semiconductor |
TRANSISTOR PREBIAS NPN 200MW SMT3 |
в производстве | NPN - Pre-Biased | 100mA | 50V | 2.2 kOhms | 47 kOhms | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 250MHz | 200mW | SMD Поверхностный монтаж | TO-236-3, SC-59, SOT-23-3 | SMT3 |
|
Rohm Semiconductor |
TRANSISTOR PREBIAS PNP 200MW SMT3 |
в производстве | PNP - Pre-Biased | 50mA | 50V | 10 kOhms | 10 kOhms | 30 @ 5mA, 5V | 300mV @ 500µA, 10mA | 500nA | 250MHz | 200mW | SMD Поверхностный монтаж | TO-236-3, SC-59, SOT-23-3 | SMT3 |
|
Rohm Semiconductor |
TRANSISTOR PREBIAS NPN 200MW SMT3 |
в производстве | NPN - Pre-Biased | 100mA | 50V | 1 kOhms | 10 kOhms | 33 @ 5mA, 5V | 300mV @ 500µA, 10mA | 500nA | 250MHz | 200mW | SMD Поверхностный монтаж | TO-236-3, SC-59, SOT-23-3 | SMT3 |
|
Rohm Semiconductor |
TRANSISTOR PREBIAS NPN 200MW UMT3 |
устарелый | NPN - Pre-Biased | 30mA | 50V | 22 kOhms | 22 kOhms | 56 @ 5mA, 5V | 300mV @ 500µA, 10mA | 500nA | 250MHz | 200mW | SMD Поверхностный монтаж | SC-70, SOT-323 | UMT3 |
|
Rohm Semiconductor |
TRANSISTOR PREBIAS NPN 200MW UMT3 |
устарелый | NPN - Pre-Biased | 100mA | 50V | 4.7 kOhms | 4.7 kOhms | 30 @ 10mA, 5V | 300mV @ 500µA, 10mA | 500nA | 250MHz | 200mW | SMD Поверхностный монтаж | SC-70, SOT-323 | UMT3 |
|
Rohm Semiconductor |
TRANSISTOR PREBIAS PNP 200MW SMT3 |
в производстве | PNP - Pre-Biased | 100mA | 50V | 4.7 kOhms | 4.7 kOhms | 30 @ 10mA, 5V | 300mV @ 500µA, 10mA | 500nA | 250MHz | 200mW | SMD Поверхностный монтаж | TO-236-3, SC-59, SOT-23-3 | SMT3 |
|
Rohm Semiconductor |
TRANSISTOR PREBIAS NPN 200MW UMT3 |
устарелый | NPN - Pre-Biased | 100mA | 50V | 2.2 kOhms | 47 kOhms | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 250MHz | 200mW | SMD Поверхностный монтаж | SC-70, SOT-323 | UMT3 |
|
Rohm Semiconductor |
TRANSISTOR PREBIAS NPN 200MW SMT3 |
в производстве | NPN - Pre-Biased | 30mA | 50V | 22 kOhms | 22 kOhms | 56 @ 5mA, 5V | 300mV @ 500µA, 10mA | 500nA | 250MHz | 200mW | SMD Поверхностный монтаж | TO-236-3, SC-59, SOT-23-3 | SMT3 |
|
Rohm Semiconductor |
TRANSISTOR PREBIAS NPN 200MW UMT3 |
устарелый | NPN - Pre-Biased | 30mA | 50V | 47 kOhms | 47 kOhms | 68 @ 5mA, 5V | 300mV @ 500µA, 10mA | 500nA | 250MHz | 200mW | SMD Поверхностный монтаж | SC-70, SOT-323 | UMT3 |
|
Rohm Semiconductor |
TRANSISTOR PREBIAS NPN 200MW UMT3 |
устарелый | NPN - Pre-Biased | 100mA | 50V | 1 kOhms | 10 kOhms | 33 @ 5mA, 5V | 300mV @ 500µA, 10mA | 500nA | 250MHz | 200mW | SMD Поверхностный монтаж | SC-70, SOT-323 | UMT3 |
|
Infineon Technologies |
TRANSISTOR PREBIAS NPN 0.2W SOT23-3 |
устарелый | NPN - Pre-Biased | 100mA | 50V | 4.7 kOhms | 4.7 kOhms | 20 @ 5mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 140MHz | 200mW | SMD Поверхностный монтаж | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
|
Infineon Technologies |
TRANSISTOR PREBIAS NPN 0.2W SOT23-3 |
устарелый | NPN - Pre-Biased | 100mA | 50V | 10 kOhms | 47 kOhms | 70 @ 5mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 150MHz | 200mW | SMD Поверхностный монтаж | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
|
Diodes Incorporated |
TRANSISTOR PREBIAS NPN 200MW SOT23-3 |
в производстве | NPN - Pre-Biased | 100mA | 50V | 10 kOhms | 10 kOhms | 30 @ 5mA, 5V | 300mV @ 500µA, 10mA | 500nA | 250MHz | 200mW | SMD Поверхностный монтаж | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
|
Toshiba Semiconductor and Storage |
TRANSISTOR PREBIAS NPN 0.2W S-MINI |
в производстве | NPN - Pre-Biased | 100mA | 50V | 4.7 kOhms | 4.7 kOhms | 30 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 250MHz | 200mW | SMD Поверхностный монтаж | TO-236-3, SC-59, SOT-23-3 | S-Mini |
|
ON Semiconductor |
TRANSISTOR PREBIAS NPN 300MW TO92-3 |
в производстве | NPN - Pre-Biased | 100mA | 50V | 22 kOhms | 22 kOhms | 56 @ 5mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 250MHz | 300mW | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
|
Rohm Semiconductor |
TRANSISTOR PREBIAS NPN 150MW EMT3F |
устарелый | NPN - Pre-Biased | 100mA | 50V | 4.7 kOhms | 47 kOhms | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 250MHz | 150mW | SMD Поверхностный монтаж | SC-89, SOT-490 | EMT3F (SOT-416FL) |
|
Diodes Incorporated |
TRANSISTOR PREBIAS NPN 200MW SOT23-3 |
в производстве | NPN - Pre-Biased | 100mA | 50V | 4.7 kOhms | 4.7 kOhms | 20 @ 10mA, 5V | 300mV @ 500µA, 10mA | 500nA | 250MHz | 200mW | SMD Поверхностный монтаж | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
|
Diodes Incorporated |
TRANSISTOR PREBIAS NPN 200MW SOT23-3 |
в производстве | NPN - Pre-Biased | 100mA | 50V | 1 kOhms | 10 kOhms | 33 @ 5mA, 5V | 300mV @ 500µA, 10mA | 500nA | 250MHz | 200mW | SMD Поверхностный монтаж | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
|
Diodes Incorporated |
TRANSISTOR PREBIAS NPN 200MW SOT23-3 |
в производстве | NPN - Pre-Biased | 100mA | 50V | 4.7 kOhms | - | 100 @ 1mA, 5V | 300mV @ 250µA, 2.5mA | 500nA (ICBO) | 250MHz | 200mW | SMD Поверхностный монтаж | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
|
Diodes Incorporated |
TRANSISTOR PREBIAS NPN 200MW SOT323 |
в производстве | NPN - Pre-Biased | 100mA | 50V | 4.7 kOhms | 47 kOhms | 80 @ 10mA, 5V | 300mV @ 250µA, 5mA | 500nA | 250MHz | 200mW | SMD Поверхностный монтаж | SC-70, SOT-323 | SOT-323 |
|
Diodes Incorporated |
TRANSISTOR PREBIAS PNP 200MW SOT23-3 |
в производстве | PNP - Pre-Biased | 500mA | 50V | 1 kOhms | 10 kOhms | 56 @ 50mA, 5V | 300mV @ 2.5mA, 50mA | 500nA | 200MHz | 200mW | SMD Поверхностный монтаж | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 |
|
ON Semiconductor |
TRANSISTOR PREBIAS NPN 300MW TO92-3 |
в производстве | NPN - Pre-Biased | 100mA | 50V | 4.7 kOhms | 10 kOhms | 30 @ 5mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 250MHz | 300mW | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |
|
ON Semiconductor |
TRANSISTOR PREBIAS NPN 300MW TO92-3 |
в производстве | NPN - Pre-Biased | 100mA | 50V | 4.7 kOhms | 47 kOhms | 68 @ 5mA, 5V | 300mV @ 500µA, 10mA | 100nA (ICBO) | 250MHz | 300mW | Through Hole | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 |