номер части Производитель / Марка Краткое описание Статус деталиТип полевого транзистораФункция FETСлив к источнику напряжения (Vdss)Ток - непрерывный слив (Id) при 25 ° CRds On (Макс.) @ Id, VgsVgs (th) (Max) @ IdЗаряд затвора (Qg) (Макс.) @ VgsВходная емкость (Ciss) (Макс.) @ VdsМощность - макс.Рабочая ТемператураТип монтажаУпаковка / чехолПакет устройств поставщика
Diodes Incorporated MOSFET N/P-CH 60V V-DFN3030-8 устарелыйN and P-ChannelLogic Level Gate60V3.1A, 2.4A85 mOhm @ 1.5A, 10V3V @ 250µA11.5nC @ 10V731pF @ 20V1.4W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-WDFNV-DFN3030-8
Alpha & Omega Semiconductor Inc. MOSFET 2N-CH 4WLCSP устарелый2 N-Channel (Dual) Common DrainLogic Level Gate
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9.1nC @ 4.5V
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1.3W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-UFBGA, WLCSP4-WLCSP (1.57x1.57)
Renesas Electronics America MOSFET 2P-CH 20V 3A 6HUSON устарелый2 P-Channel (Dual)Logic Level Gate, 1.8V Drive20V3A79 mOhm @ 1.5A, 4.5V
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5.1nC @ 4.5V473pF @ 10V2.3W150°C (TJ)SMD Поверхностный монтаж6-WDFN Exposed Pad6-HUSON (2x2)
Renesas Electronics America MOSFET 2P-CH 12V 4A 6HUSON устарелый2 P-Channel (Dual)Logic Level Gate, 1.8V Drive12V4A67 mOhm @ 2A, 4.5V
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5nC @ 4.5V486pF @ 10V2.3W150°C (TJ)SMD Поверхностный монтаж6-WDFN Exposed Pad6-HUSON (2x2)
Diodes Incorporated MOSFET 2P-CH 30V 5.7A 8SO устарелый2 P-Channel (Dual)Logic Level Gate30V5.7A25 mOhm @ 7.1A, 10V3V @ 250µA31.6nC @ 10V1678pF @ 15V1.81W-55°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SO
Microsemi Corporation MOSFET 2N-CH 900V 30A SP1 устарелый2 N Channel (Dual Buck Chopper)Super Junction900V30A120 mOhm @ 26A, 10V3.5V @ 3mA270nC @ 10V6800pF @ 100V250W-40°C ~ 150°C (TJ)Chassis MountSP1SP1
Microsemi Corporation MOSFET 2N-CH 900V 30A SP1 устарелый2 N Channel (Dual Buck Chopper)Super Junction900V30A120 mOhm @ 26A, 10V3.5V @ 3mA270nC @ 10V6800pF @ 100V250W-40°C ~ 150°C (TJ)Chassis MountSP1SP1
Microsemi Corporation MOSFET 4N-CH 900V 30A SP2 устарелый4 N-Channel (H-Bridge)Super Junction900V30A120 mOhm @ 26A, 10V3.5V @ 3mA270nC @ 10V6800pF @ 100V250W-40°C ~ 150°C (TJ)Chassis MountSP2SP2
Microsemi Corporation MOSFET 2N-CH 600V 66A SP2 устарелый2 N Channel (Phase Leg)Super Junction600V66A42 mOhm @ 33A, 10V5V @ 6mA510nC @ 10V14600pF @ 25V416W-40°C ~ 150°C (TJ)Chassis MountSP2SP2
Microsemi Corporation MOSFET 3N-CH 600V 36A SP1 устарелый3 N Channel (Phase Leg + Boost Chopper)Super Junction600V36A83 mOhm @ 24.5A, 10V5V @ 3mA250nC @ 10V7200pF @ 25V250W-40°C ~ 150°C (TJ)Chassis MountSP1SP1
Microsemi Corporation MOSFET 3N-CH 600V 36A SP1 устарелый3 N Channel (Phase Leg + Boost Chopper)Super Junction600V36A83 mOhm @ 24.5A, 10V5V @ 3mA250nC @ 10V7200pF @ 25V250W-40°C ~ 150°C (TJ)Chassis MountSP1SP1
Microsemi Corporation MOSFET 2N-CH 600V 49A SP1 устарелый2 N Channel (Dual Buck Chopper)Super Junction600V49A45 mOhm @ 24.5A, 10V3.9V @ 3mA150nC @ 10V7200pF @ 25V250W-40°C ~ 150°C (TJ)Chassis MountSP1SP1
Microsemi Corporation MOSFET 2N-CH 600V 39A SP1 устарелый2 N Channel (Dual Buck Chopper)Super Junction600V39A70 mOhm @ 39A, 10V3.9V @ 2.7mA259nC @ 10V700pF @ 25V250W-40°C ~ 150°C (TJ)Chassis MountSP1SP1
Microsemi Corporation MOSFET 2N-CH 900V 59A SP2 устарелый2 N-Channel (Half Bridge)Super Junction900V59A60 mOhm @ 52A, 10V3.5V @ 6mA540nC @ 10V13600pF @ 100V462W-40°C ~ 150°C (TJ)Chassis MountSP2SP2
Toshiba Semiconductor and Storage MOSFET N/P-CH 20V 0.5A UF6 S устарелыйN and P-ChannelLogic Level Gate20V500mA145 mOhm @ 250MA, 4V1.1V @ 100µA
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268pF @ 10V500mW150°C (TJ)SMD Поверхностный монтаж6-SMD, Flat LeadsUF6
Microsemi Corporation MOSFET 2N-CH 1000V 22A SP3 устарелый2 N-Channel (Dual)Standard1000V (1kV)22A420 mOhm @ 11A, 10V5V @ 2.5mA186nC @ 10V5200pF @ 25V390W-40°C ~ 150°C (TJ)Chassis MountSP3SP3
Microsemi Corporation MOSFET 2N-CH 100V 139A SP3 устарелый2 N-Channel (Dual) AsymmetricalStandard100V139A10 mOhm @ 69.5A, 10V4V @ 2.5mA350nC @ 10V9875pF @ 25V390W-40°C ~ 150°C (TJ)Chassis MountSP3SP3
Microsemi Corporation MOSFET 2N-CH 1200V 17A SP3 устарелый2 N-Channel (Dual)Standard1200V (1.2kV)17A684 mOhm @ 8.5A, 10V5V @ 2.5mA187nC @ 10V5155pF @ 25V390W-40°C ~ 150°C (TJ)Chassis MountSP3SP3
Microsemi Corporation MOSFET 2N-CH 200V 104A SP3 устарелый2 N-Channel (Dual) AsymmetricalStandard200V104A19 mOhm @ 52A, 10V5V @ 2.5mA140nC @ 10V7220pF @ 25V390W-40°C ~ 150°C (TJ)Chassis MountSP3SP3
Microsemi Corporation MOSFET 2N-CH 500V 51A SP3 устарелый2 N-Channel (Dual) AsymmetricalStandard500V51A78 mOhm @ 42A, 10V5V @ 2.5mA340nC @ 10V10800pF @ 25V390W-40°C ~ 150°C (TJ)Chassis MountSP3SP3
Microsemi Corporation MOSFET 2N-CH 1000V 20A SP3 устарелый2 N-Channel (Dual)Standard1000V (1kV)20A720 mOhm @ 10A, 10V4V @ 2.5mA
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6000pF @ 25V520W-40°C ~ 150°C (TJ)Chassis MountSP3SP3
Microsemi Corporation MOSFET 2N-CH 100V 154A SP3 устарелый2 N-Channel (Dual)Standard100V154A (Tc)10 mOhm @ 69.5A, 10V4V @ 2.5mA
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9875pF @ 25V480W-40°C ~ 150°C (TJ)Chassis MountSP3SP3
Microsemi Corporation MOSFET 2N-CH 200V 109A SP3 устарелый2 N-Channel (Dual)Standard200V109A (Tc)19 mOhm @ 50A, 10V4V @ 2.5mA
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9880pF @ 25V480W-40°C ~ 150°C (TJ)Chassis MountSP3SP3
Microsemi Corporation MOSFET 2N-CH 500V 52A SP3 устарелый2 N-Channel (Dual)Standard500V52A108 mOhm @ 26A, 10V4V @ 2.5mA
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7600pF @ 25V568W-40°C ~ 150°C (TJ)Chassis MountSP3SP3
Microsemi Corporation MOSFET 2N-CH 600V 49A SP1 устарелый2 N-Channel (Dual)Standard600V49A45 mOhm @ 24.5A, 10V3.9V @ 3mA150nC @ 10V7200pF @ 25V250W-40°C ~ 150°C (TJ)Chassis MountSP1SP1
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