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Infineon Technologies |
DIODE GEN PURP 1.2KV 100A WAFER |
Discontinued at - | Standard | 1200V | 100A (DC) | 1.6V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | SMD Поверхностный монтаж | Die | Sawn on foil | -55°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP 1.2KV 75A WAFER |
Discontinued at - | Standard | 1200V | 75A (DC) | 1.9V @ 75A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | SMD Поверхностный монтаж | Die | Sawn on foil | -55°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP 1.2KV 75A WAFER |
Discontinued at - | Standard | 1200V | 75A (DC) | 2.1V @ 75A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | SMD Поверхностный монтаж | Die | Sawn on foil | -55°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP 1.7KV 75A WAFER |
Discontinued at - | Standard | 1700V | 75A (DC) | 2.15V @ 75A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1700V | - | SMD Поверхностный монтаж | Die | Sawn on foil | -40°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP 600V 150A WAFER |
Discontinued at - | Standard | 600V | 150A (DC) | 1.25V @ 150A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | SMD Поверхностный монтаж | Die | Sawn on foil | -55°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP 1.7KV 100A WAFER |
Discontinued at - | Standard | 1700V | 100A (DC) | 1.8V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1700V | - | SMD Поверхностный монтаж | Die | Sawn on foil | -55°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP 1.7KV 100A WAFER |
Discontinued at - | Standard | 1700V | 100A (DC) | 2.15V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1700V | - | SMD Поверхностный монтаж | Die | Sawn on foil | -40°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 1.7KV 150A WAFER |
Discontinued at - | Standard | 1700V | 150A (DC) | 1.8V @ 150A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1700V | - | SMD Поверхностный монтаж | Die | Sawn on foil | -55°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP 1.2KV 100A WAFER |
Discontinued at - | Standard | 1200V | 100A (DC) | 1.9V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | SMD Поверхностный монтаж | Die | Sawn on foil | -55°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP 1.2KV 100A WAFER |
Discontinued at - | Standard | 1200V | 100A (DC) | 2.1V @ 100A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | SMD Поверхностный монтаж | Die | Sawn on foil | -55°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP 1.2KV 150A WAFER |
Discontinued at - | Standard | 1200V | 150A (DC) | 1.6V @ 150A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | SMD Поверхностный монтаж | Die | Sawn on foil | -55°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP 600V 200A WAFER |
Discontinued at - | Standard | 600V | 200A (DC) | 1.25V @ 200A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | SMD Поверхностный монтаж | Die | Sawn on foil | -55°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP 1.7KV 150A WAFER |
Discontinued at - | Standard | 1700V | 150A (DC) | 1.8V @ 150A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1700V | - | SMD Поверхностный монтаж | Die | Sawn on foil | -55°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP 80V 250MA SOT23-3 |
устарелый | Standard | 80V | 250mA (DC) | 1.25V @ 150mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 1µA @ 75V | 2pF @ 0V, 1MHz | SMD Поверхностный монтаж | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 150°C (Max) |
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Infineon Technologies |
DIODE SCHOTTKY 30V 500MA SC79-2 |
устарелый | Schottky | 30V | 500mA (DC) | 620mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 25µA @ 30V | 10pF @ 5V, 1MHz | SMD Поверхностный монтаж | SC-79, SOD-523 | PG-SC79-2 | -55°C ~ 125°C |
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Infineon Technologies |
DIODE SCHOTTKY 40V 120MA SOT23-3 |
устарелый | Schottky | 40V | 120mA (DC) | 1V @ 40mA | Small Signal =< 200mA (Io), Any Speed | 100ps | 1µA @ 30V | 5pF @ 0V, 1MHz | SMD Поверхностный монтаж | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | -55°C ~ 150°C |
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Infineon Technologies |
DIODE SCHOTTKY 70V 70MA SOT23-3 |
устарелый | Schottky | 70V | 70mA (DC) | 1V @ 15mA | Small Signal =< 200mA (Io), Any Speed | 100ps | 100nA @ 50V | 2pF @ 0V, 1MHz | SMD Поверхностный монтаж | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | -55°C ~ 125°C |
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Infineon Technologies |
DIODE SCHOTTKY 30V 200MA SOT23-3 |
устарелый | Schottky | 30V | 200mA (DC) | 800mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 2µA @ 25V | 10pF @ 1V, 1MHz | SMD Поверхностный монтаж | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 150°C (Max) |
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Infineon Technologies |
DIODE SCHOTTKY 40V 120MA SOT23-3 |
устарелый | Schottky | 40V | 120mA | 750mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 2µA @ 30V | 6pF @ 1V, 1MHz | SMD Поверхностный монтаж | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 150°C (Max) |
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Infineon Technologies |
DIODE GEN PURP 80V 250MA SOT323 |
устарелый | Standard | 80V | 250mA (DC) | 1.25V @ 150mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 1µA @ 75V | 2pF @ 0V, 1MHz | SMD Поверхностный монтаж | SC-70, SOT-323 | PG-SOT323-3 | 150°C (Max) |
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Infineon Technologies |
DIODE SCHOTTKY 30V 2A SOT363-6 |
устарелый | Schottky | 30V | 2A (DC) | 600mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 30V | 70pF @ 1V, 1MHz | SMD Поверхностный монтаж | 6-VSSOP, SC-88, SOT-363 | PG-SOT363-6 | -55°C ~ 125°C |
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Infineon Technologies |
DIODE SCHOTTKY 30V 500MA SC79-2 |
устарелый | Schottky | 30V | 500mA (DC) | 500mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 30V | 15pF @ 5V, 1MHz | SMD Поверхностный монтаж | SC-79, SOD-523 | PG-SC79-2 | -55°C ~ 125°C |
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Infineon Technologies |
DIODE SCHOTTKY 40V 200MA TSLP-2 |
устарелый | Schottky | 40V | 200mA (DC) | 550mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | - | 10µA @ 40V | 12pF @ 5V, 1MHz | SMD Поверхностный монтаж | SOD-882 | PG-TSLP-2 | -55°C ~ 150°C |
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Infineon Technologies |
DIODE SCHOTTKY 45V 750MA SC79-2 |
устарелый | Schottky | 45V | 750mA (DC) | 600mV @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 45V | 10pF @ 10V, 1MHz | SMD Поверхностный монтаж | SC-79, SOD-523 | PG-SC79-2 | 150°C (Max) |
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Infineon Technologies |
DIODE SCHOTTKY 30V 200MA SC79-2 |
устарелый | Schottky | 30V | 200mA (DC) | 800mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 2µA @ 25V | 10pF @ 1V, 1MHz | SMD Поверхностный монтаж | SC-79, SOD-523 | PG-SC79-2 | 150°C (Max) |
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Infineon Technologies |
DIODE SCHOTTKY 30V 200MA SOT323 |
устарелый | Schottky | 30V | 200mA (DC) | 800mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 2µA @ 25V | 10pF @ 1V, 1MHz | SMD Поверхностный монтаж | SC-70, SOT-323 | PG-SOT323-3 | 150°C (Max) |
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Infineon Technologies |
DIODE SCHOTTKY 600V 6A D2PAK |
устарелый | Silicon Carbide Schottky | 600V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 80µA @ 600V | 280pF @ 1V, 1MHz | SMD Поверхностный монтаж | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SILICON 600V 10A D2PAK |
устарелый | Silicon Carbide Schottky | 600V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 140µA @ 600V | 480pF @ 1V, 1MHz | SMD Поверхностный монтаж | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 600V 5.6A TO252-3 |
Discontinued at - | Silicon Carbide Schottky | 600V | 5.6A | 2.3V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 25µA @ 600V | 80pF @ 1V, 1MHz | SMD Поверхностный монтаж | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 600V 5A TO252-3 |
Discontinued at - | Silicon Carbide Schottky | 600V | 5A (DC) | 2.3V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 30µA @ 600V | 110pF @ 1V, 1MHz | SMD Поверхностный монтаж | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 600V 6A TO252-3 |
Discontinued at - | Silicon Carbide Schottky | 600V | 6A (DC) | 2.3V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 130pF @ 1V, 1MHz | SMD Поверхностный монтаж | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 600V 8A TO252-3 |
Discontinued at - | Silicon Carbide Schottky | 600V | 8A (DC) | 2.1V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 70µA @ 600V | 240pF @ 1V, 1MHz | SMD Поверхностный монтаж | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 600V 9A TO252-3 |
Discontinued at - | Silicon Carbide Schottky | 600V | 9A (DC) | 2.1V @ 9A | No Recovery Time > 500mA (Io) | 0ns | 80µA @ 600V | 280pF @ 1V, 1MHz | SMD Поверхностный монтаж | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 600V 10A TO252-3 |
Discontinued at - | Silicon Carbide Schottky | 600V | 10A (DC) | 2.1V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 90µA @ 600V | 290pF @ 1V, 1MHz | SMD Поверхностный монтаж | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 600V 12A TO252-3 |
устарелый | Silicon Carbide Schottky | 600V | 12A (DC) | 2.1V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 600V | 310pF @ 1V, 1MHz | SMD Поверхностный монтаж | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 1200V 2A TO220-2 |
устарелый | Silicon Carbide Schottky | 1200V | 2A (DC) | 1.8V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 48µA @ 1200V | 125pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 600V 3A TO220-2 |
Discontinued at - | Silicon Carbide Schottky | 600V | 3A (DC) | 2.3V @ 3A | No Recovery Time > 500mA (Io) | 0ns | 15µA @ 600V | 60pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 600V 4A TO220-2 |
Discontinued at - | Silicon Carbide Schottky | 600V | 4A (DC) | 2.3V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 25µA @ 600V | 80pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 1200V 5A TO220-2 |
устарелый | Silicon Carbide Schottky | 1200V | 5A (DC) | 1.8V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 120µA @ 1200V | 250pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 600V 5A TO220-2 |
Discontinued at - | Silicon Carbide Schottky | 600V | 5A (DC) | 2.3V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 30µA @ 600V | 110pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 600V 6A TO220-2 |
Discontinued at - | Silicon Carbide Schottky | 600V | 6A (DC) | 2.3V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 130pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 1.2KV 7.5A TO220 |
устарелый | Silicon Carbide Schottky | 1200V | 7.5A (DC) | 1.8V @ 7.5A | No Recovery Time > 500mA (Io) | 0ns | 180µA @ 1200V | 380pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 600V 8A TO220-2 |
Discontinued at - | Silicon Carbide Schottky | 600V | 8A (DC) | 2.1V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 70µA @ 600V | 240pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 600V 9A TO220-2 |
Discontinued at - | Silicon Carbide Schottky | 600V | 9A (DC) | 2.1V @ 9A | No Recovery Time > 500mA (Io) | 0ns | 80µA @ 600V | 280pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 1200V 10A TO220-2 |
устарелый | Silicon Carbide Schottky | 1200V | 10A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 240µA @ 1200V | 500pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 600V 10A TO220-2 |
Discontinued at - | Silicon Carbide Schottky | 600V | 10A (DC) | 2.1V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 90µA @ 600V | 290pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 600V 12A TO220-2 |
Discontinued at - | Silicon Carbide Schottky | 600V | 12A (DC) | 2.1V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 600V | 310pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 1200V 15A TO220-2 |
устарелый | Silicon Carbide Schottky | 1200V | 15A (DC) | 1.8V @ 15A | No Recovery Time > 500mA (Io) | 0ns | 360µA @ 1200V | 750pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 600V 2A TO220-2FP |
устарелый | Silicon Carbide Schottky | 600V | 2A (DC) | 1.9V @ 2A | No Recovery Time > 500mA (Io) | 0ns | 15µA @ 600V | 60pF @ 1V, 1MHz | Through Hole | TO-220-2 Full Pack | PG-TO220-2 Full Pack | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 600V 3A TO220-2FP |
устарелый | Silicon Carbide Schottky | 600V | 3A (DC) | 1.9V @ 3A | No Recovery Time > 500mA (Io) | 0ns | 30µA @ 600V | 90pF @ 1V, 1MHz | Through Hole | TO-220-2 Full Pack | PG-TO220-2 Full Pack | -55°C ~ 175°C |
