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Infineon Technologies |
DIODE GEN PURP 2.2KV 1100A MOD |
в производстве | Standard | 2200V | 1100A | 1.11V @ 3000A | Standard Recovery >500ns, > 200mA (Io) | - | 80mA @ 2200V | - | Chassis Mount | Module | Module | -40°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP 4.6KV 1800A |
в производстве | Standard | 4600V | 1800A | 1.32V @ 1500A | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 4600V | - | Chassis Mount | DO-200AC, K-PUK | - | -40°C ~ 160°C |
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Infineon Technologies |
DIODE GEN PURP 2.2KV 1100A MOD |
в производстве | Standard | 2200V | 1100A | 1.11V @ 3000A | Standard Recovery >500ns, > 200mA (Io) | - | 150mA @ 2200V | - | Chassis Mount | Module | Module | -40°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP 6KV 1070A |
в производстве | Standard | 6000V | 1070A | 1.9V @ 1200A | Standard Recovery >500ns, > 200mA (Io) | - | 50mA @ 6000V | - | Chassis Mount | DO-200AB, B-PUK | - | -40°C ~ 160°C |
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Infineon Technologies |
DIODE GEN PURP 4.8KV 1800A |
в производстве | Standard | 4800V | 1800A | 1.32V @ 1500A | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 4800V | - | Chassis Mount | DO-200AC, K-PUK | - | -40°C ~ 160°C |
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Infineon Technologies |
DIODE GEN PURP 600V 8470A |
в производстве | Standard | 600V | 8470A | 980mV @ 10000A | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 600V | - | Chassis Mount | DO-200AB, B-PUK | - | -40°C ~ 180°C |
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Infineon Technologies |
DIODE GEN PURP 2.6KV 1070A MOD |
в производстве | Standard | 2600V | 1070A | 1.52V @ 3400A | Standard Recovery >500ns, > 200mA (Io) | - | 150mA @ 2600V | - | Chassis Mount | Module | Module | -40°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP 2.8KV 1070A MOD |
в производстве | Standard | 2800V | 1070A | 1.52V @ 3400A | Standard Recovery >500ns, > 200mA (Io) | - | 150mA @ 2800V | - | Chassis Mount | Module | Module | -40°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP 4.5KV 445A |
в производстве | Standard | 4500V | 445A | 4.15V @ 1200A | Standard Recovery >500ns, > 200mA (Io) | - | 50mA @ 4500V | - | Chassis Mount | DO-200AB, B-PUK | - | -40°C ~ 125°C |
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Infineon Technologies |
DIODE GEN PURP 6.5KV 1070A |
в производстве | Standard | 6500V | 1070A | 1.9V @ 1200A | Standard Recovery >500ns, > 200mA (Io) | - | 50mA @ 6500V | - | Chassis Mount | DO-200AB, B-PUK | - | -40°C ~ 160°C |
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Infineon Technologies |
DIODE GEN PURP 600V 8470A |
в производстве | Standard | 600V | 8470A | 980mV @ 10000A | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 600V | - | Chassis Mount | DO-200AB, B-PUK | - | -40°C ~ 180°C |
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Infineon Technologies |
DIODE GEN PURP 4.5KV 1570A |
в производстве | Standard | 4500V | 1570A | 3.7V @ 2500A | Standard Recovery >500ns, > 200mA (Io) | - | 250mA @ 4500V | - | Chassis Mount | DO-200AC, K-PUK | - | -40°C ~ 125°C |
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Infineon Technologies |
DIODE GEN PURP 400V 8320A |
в производстве | Standard | 400V | 8320A | 795mV @ 4000A | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 400V | - | Chassis Mount | DO-200AD | - | -25°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP 6.8KV 1070A |
в производстве | Standard | 6800V | 1070A | 1.9V @ 1200A | Standard Recovery >500ns, > 200mA (Io) | - | 50mA @ 6800V | - | Chassis Mount | DO-200AB, B-PUK | - | -40°C ~ 160°C |
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Infineon Technologies |
DIODE GEN PURP 3.6KV 950A MODULE |
в производстве | Standard | 3600V | 950A | 1.78V @ 3000A | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 3600V | - | Chassis Mount | Module | Module | -40°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP 600V 8320A |
в производстве | Standard | 600V | 8320A | 795mV @ 4000A | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 600V | - | Chassis Mount | DO-200AD | - | -25°C ~ 150°C |
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Infineon Technologies |
THYR / DIODE MODULE DK |
в производстве | Standard | 4400V | 950A | - | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 4400V | - | Chassis Mount | Module | - | 160°C (Max) |
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Infineon Technologies |
THYR / DIODE MODULE DK |
в производстве | Standard | 4400V | 950A | - | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 4400V | - | Chassis Mount | Module | - | 160°C (Max) |
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Infineon Technologies |
DIODE GEN PURP 6.8KV 2200A |
в производстве | Standard | 6800V | 2200A | 1.8V @ 2500A | Standard Recovery >500ns, > 200mA (Io) | - | 50mA @ 6800V | - | Chassis Mount | DO-200AC, K-PUK | - | -40°C ~ 160°C |
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Infineon Technologies |
RECT DIODE 6500V BG-D7626K-1-1 |
в производстве | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
DIODE GEN PURP 9KV 760A |
в производстве | Standard | 9000V | 760A | 3.2V @ 1200A | Standard Recovery >500ns, > 200mA (Io) | - | 50mA @ 9000V | - | Chassis Mount | DO-200AB, B-PUK | - | -40°C ~ 160°C |
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Infineon Technologies |
DIODE GEN PURP 2.2KV 4810A |
в производстве | Standard | 2200V | 4810A | 1.078V @ 4000A | Standard Recovery >500ns, > 200mA (Io) | - | 200mA @ 2200V | - | Chassis Mount | DO-200AE | - | -40°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP 4.4KV 950A MODULE |
в производстве | Standard | 4400V | 950A | 1.78V @ 3000A | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 4400V | - | Chassis Mount | Module | Module | -40°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP 2.4KV 4810A |
в производстве | Standard | 2400V | 4810A | 1.078V @ 4000A | Standard Recovery >500ns, > 200mA (Io) | - | 200mA @ 2400V | - | Chassis Mount | DO-200AE | - | -40°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP 4.5KV 1080A |
в производстве | Standard | 4500V | 1080A | 3.5V @ 2500A | Standard Recovery >500ns, > 200mA (Io) | - | 140mA @ 4500V | - | Chassis Mount | DO-200AC, K-PUK | - | -40°C ~ 125°C |
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Infineon Technologies |
DIODE GEN PURP 2.8KV 4810A |
в производстве | Standard | 2800V | 4810A | 1.078V @ 4000A | Standard Recovery >500ns, > 200mA (Io) | - | 200mA @ 2800V | - | Chassis Mount | DO-200AE | - | -40°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP 4.5KV 1225A |
в производстве | Standard | 4500V | 1225A | 3.5V @ 2500A | Standard Recovery >500ns, > 200mA (Io) | - | 250mA @ 4500V | - | Chassis Mount | DO-200AD | - | -40°C ~ 125°C |
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Infineon Technologies |
RECTIFIER DIODE DISC |
в производстве | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
DIODE GEN PURP 6.5KV 1220A |
в производстве | Standard | 6500V | 1220A | 5.6V @ 2500A | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 6500V | - | Chassis Mount | DO-200AD | - | 0°C ~ 140°C |
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Infineon Technologies |
DIODE GEN PURP 4.5KV 1140A |
в производстве | Standard | 4500V | 1140A | 6V @ 2500A | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 4500V | - | Chassis Mount | DO-200AD | - | 0°C ~ 140°C |
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Infineon Technologies |
DIODE GEN PURP 4.5KV 1450A |
в производстве | Standard | 4500V | 1450A | 4.2V @ 2500A | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 4500V | - | Chassis Mount | DO-200AD | - | 0°C ~ 140°C |
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Infineon Technologies |
DIODE GEN PURP 4.5KV 3250A |
в производстве | Standard | 4500V | 3250A | 1.2V @ 2500A | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 4500V | - | Chassis Mount | DO-200AD | - | -40°C ~ 140°C |
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Infineon Technologies |
RECTIFIER DIODE 6800V 2930A |
в производстве | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
DIODE GEN PURP 6KV 3910A |
в производстве | Standard | 6000V | 3910A | 1.7V @ 4000A | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 6000V | - | Chassis Mount | DO-200AE | - | -40°C ~ 160°C |
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Infineon Technologies |
DIODE GEN PURP 4.5KV 1630A |
в производстве | Standard | 4500V | 1630A | 2.6V @ 2500A | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 4500V | - | Chassis Mount | DO-200AD | - | -40°C ~ 140°C |
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Infineon Technologies |
DIODE RECTIFIER 2200V 4240A |
в производстве | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
DIODE GEN PURP 6.5KV 3910A |
в производстве | Standard | 6500V | 3910A | 1.7V @ 4000A | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 6500V | - | Chassis Mount | DO-200AE | - | -40°C ~ 160°C |
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Infineon Technologies |
DIODE GEN PURP 2KV 6010A |
в производстве | Standard | 2000V | 6010A | 1V @ 4000A | Standard Recovery >500ns, > 200mA (Io) | - | 200mA @ 2000V | - | Chassis Mount | DO-200AE | - | -40°C ~ 160°C |
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Infineon Technologies |
DIODE GEN PURP 4.5KV 1530A |
в производстве | Standard | 4500V | 1530A | 2.5V @ 2500A | Standard Recovery >500ns, > 200mA (Io) | - | 80mA @ 4500V | - | Chassis Mount | DO-200AC, K-PUK | - | -40°C ~ 140°C |
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Infineon Technologies |
DIODE GEN PURP 6.5KV 1100A |
в производстве | Standard | 6500V | 1100A | 5.6V @ 2500A | Standard Recovery >500ns, > 200mA (Io) | - | 150mA @ 6500V | - | Chassis Mount | DO-200AE | - | 0°C ~ 140°C |
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Infineon Technologies |
DIODE GEN PURP 6KV 4090A |
в производстве | Standard | 6000V | 4090A | 1.7V @ 4000A | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 6000V | - | Chassis Mount | DO-200AE | - | -40°C ~ 160°C |
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Infineon Technologies |
DIODE GEN PURP 2.2KV 6010A |
в производстве | Standard | 2200V | 6010A | 1V @ 4000A | Standard Recovery >500ns, > 200mA (Io) | - | 200mA @ 2200V | - | Chassis Mount | DO-200AE | - | -40°C ~ 160°C |
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Infineon Technologies |
DIODE GEN PURP 4.5KV 1630A |
в производстве | Standard | 4500V | 1630A | 2.6V @ 2500A | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 4500V | - | Chassis Mount | DO-200AD | - | -40°C ~ 140°C |
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Infineon Technologies |
DIODE GEN PURP 6.5KV 4090A |
в производстве | Standard | 6500V | 4090A | 1.7V @ 4000A | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 6500V | - | Chassis Mount | DO-200AE | - | -40°C ~ 160°C |
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Infineon Technologies |
DIODE GEN PURP 4KV 4870A |
в производстве | Standard | 4000V | 4870A | 1.27V @ 4000A | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 4000V | - | Chassis Mount | DO-200AE | - | -40°C ~ 160°C |
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Infineon Technologies |
DIODE GEN PURP D10026K-1 |
в производстве | Standard | - | 1720A | - | Standard Recovery >500ns, > 200mA (Io) | - | 200mA @ 4500V | - | Chassis Mount | DO-200AD | BG-D10026K-1 | -40°C ~ 140°C |
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Infineon Technologies |
DIODE GEN PURP 4.2KV 4870A |
в производстве | Standard | 4200V | 4870A | 1.27V @ 4000A | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 4200V | - | Chassis Mount | DO-200AE | - | -40°C ~ 160°C |
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Infineon Technologies |
DIODE GEN PURP 8.5KV 3040A |
в производстве | Standard | 8500V | 3040A | - | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 8500V | - | Chassis Mount | DO-200AE | - | -40°C ~ 160°C |
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Infineon Technologies |
DIODE GEN PURP 4.5KV 1740A |
в производстве | Standard | 4500V | 1740A | 4.3V @ 2500A | Standard Recovery >500ns, > 200mA (Io) | - | 150mA @ 4500V | - | Chassis Mount | DO-200AE | - | 0°C ~ 140°C |
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Infineon Technologies |
DIODE GEN PURP 9KV 3040A |
в производстве | Standard | 9000V | 3040A | - | Standard Recovery >500ns, > 200mA (Io) | - | 100mA @ 9000V | - | Chassis Mount | DO-200AE | - | -40°C ~ 160°C |
