Integrated Silicon Solution, Inc. (ISSI) агент по продажам - Память - IS41LV16105C-50KLI-TR IS41LV16105C-50TLI-TR - ICCHIP

номер части	Производитель / Марка	Краткое описание	Статус детали	Тип памяти	Формат памяти	Технологии	Размер памяти	Частота часов	Время цикла записи - слово, страница	Время доступа	Интерфейс памяти	Напряжение - Поставка	Рабочая Температура	Тип монтажа	Упаковка / чехол	Пакет устройств поставщика
IS41LV16105C-50KLI-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 16M PARALLEL 42SOJ	в производстве	Volatile	DRAM	DRAM - FP	16Mb (1M x 16)	-	-	25ns	Parallel	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	SMD Поверхностный монтаж	42-BSOJ (0.400", 10.16mm Width)	42-SOJ
IS41LV16105C-50TLI-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 16M PARALLEL 44TSOP II	в производстве	Volatile	DRAM	DRAM - FP	16Mb (1M x 16)	-	-	25ns	Parallel	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	SMD Поверхностный монтаж	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
IS41LV16256C-35TLI	ISSI, Integrated Silicon Solution Inc	IC DRAM 4M PARALLEL 40TSOP	в производстве	Volatile	DRAM	DRAM - EDO	4Mb (256K x 16)	-	-	18ns	Parallel	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	SMD Поверхностный монтаж	44-TSOP (0.400", 10.16mm Width), 40 Leads	40-TSOP
IS41LV16256C-35TLI-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 4M PARALLEL 40TSOP	в производстве	Volatile	DRAM	DRAM - EDO	4Mb (256K x 16)	-	-	18ns	Parallel	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	SMD Поверхностный монтаж	44-TSOP (0.400", 10.16mm Width), 40 Leads	40-TSOP
IS41LV16257C-35TLI	ISSI, Integrated Silicon Solution Inc	IC DRAM 4M PARALLEL 40TSOP	в производстве	Volatile	DRAM	DRAM - FP	4Mb (256K x 16)	-	-	18ns	Parallel	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	SMD Поверхностный монтаж	44-TSOP (0.400", 10.16mm Width), 40 Leads	40-TSOP
IS41LV16257C-35TLI-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 4M PARALLEL 40TSOP	в производстве	Volatile	DRAM	DRAM - FP	4Mb (256K x 16)	-	-	18ns	Parallel	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	SMD Поверхностный монтаж	44-TSOP (0.400", 10.16mm Width), 40 Leads	40-TSOP
IS42RM16160E-6BLI	ISSI, Integrated Silicon Solution Inc	IC DRAM 256M PARALLEL 54TFBGA	Discontinued at -	Volatile	DRAM	SDRAM - Mobile	256Mb (16M x 16)	166MHz	-	5.5ns	Parallel	2.3 V ~ 3 V	-40°C ~ 85°C (TA)	SMD Поверхностный монтаж	54-TFBGA	54-TFBGA (8x8)
IS42RM16160E-6BLI-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 256M PARALLEL 54TFBGA	Discontinued at -	Volatile	DRAM	SDRAM - Mobile	256Mb (16M x 16)	166MHz	-	5.5ns	Parallel	2.3 V ~ 3 V	-40°C ~ 85°C (TA)	SMD Поверхностный монтаж	54-TFBGA	54-TFBGA (8x8)
IS42RM16160E-75BLI	ISSI, Integrated Silicon Solution Inc	IC DRAM 256M PARALLEL 54TFBGA	Discontinued at -	Volatile	DRAM	SDRAM - Mobile	256Mb (16M x 16)	133MHz	-	6ns	Parallel	2.3 V ~ 3 V	-40°C ~ 85°C (TA)	SMD Поверхностный монтаж	54-TFBGA	54-TFBGA (8x8)
IS42RM16160E-75BLI-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 256M PARALLEL 54TFBGA	Discontinued at -	Volatile	DRAM	SDRAM - Mobile	256Mb (16M x 16)	133MHz	-	6ns	Parallel	2.3 V ~ 3 V	-40°C ~ 85°C (TA)	SMD Поверхностный монтаж	54-TFBGA	54-TFBGA (8x8)
IS42RM16800G-75BLI	ISSI, Integrated Silicon Solution Inc	IC DRAM 128M PARALLEL 54TFBGA	Discontinued at -	Volatile	DRAM	SDRAM - Mobile	128Mb (8M x 16)	133MHz	-	6ns	Parallel	2.3 V ~ 3 V	-40°C ~ 85°C (TA)	SMD Поверхностный монтаж	54-TFBGA	54-TFBGA (8x8)
IS42RM16800G-75BLI-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 128M PARALLEL 54TFBGA	Discontinued at -	Volatile	DRAM	SDRAM - Mobile	128Mb (8M x 16)	133MHz	-	6ns	Parallel	2.3 V ~ 3 V	-40°C ~ 85°C (TA)	SMD Поверхностный монтаж	54-TFBGA	54-TFBGA (8x8)
IS42RM32160C-75BL	ISSI, Integrated Silicon Solution Inc	IC DRAM 512M PARALLEL 90WBGA	Discontinued at -	Volatile	DRAM	SDRAM - Mobile	512Mb (16M x 32)	133MHz	-	5.4ns	Parallel	2.3 V ~ 3 V	0°C ~ 70°C (TA)	SMD Поверхностный монтаж	90-LFBGA	90-WBGA (8x13)
IS42RM32160C-75BLI	ISSI, Integrated Silicon Solution Inc	IC DRAM 512M PARALLEL 90WBGA	Discontinued at -	Volatile	DRAM	SDRAM - Mobile	512Mb (16M x 32)	133MHz	-	5.4ns	Parallel	2.3 V ~ 3 V	-40°C ~ 85°C (TA)	SMD Поверхностный монтаж	90-LFBGA	90-WBGA (8x13)
IS42RM32160C-75BLI-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 512M PARALLEL 90WBGA	Discontinued at -	Volatile	DRAM	SDRAM - Mobile	512Mb (16M x 32)	133MHz	-	5.4ns	Parallel	2.3 V ~ 3 V	-40°C ~ 85°C (TA)	SMD Поверхностный монтаж	90-LFBGA	90-WBGA (8x13)
IS42RM32160C-75BL-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 512M PARALLEL 90WBGA	Discontinued at -	Volatile	DRAM	SDRAM - Mobile	512Mb (16M x 32)	133MHz	-	5.4ns	Parallel	2.3 V ~ 3 V	0°C ~ 70°C (TA)	SMD Поверхностный монтаж	90-LFBGA	90-WBGA (8x13)
IS42RM32400G-75BLI	ISSI, Integrated Silicon Solution Inc	IC DRAM 128M PARALLEL 90TFBGA	Discontinued at -	Volatile	DRAM	SDRAM - Mobile	128Mb (4M x 32)	133MHz	-	6ns	Parallel	2.3 V ~ 3 V	-40°C ~ 85°C (TA)	SMD Поверхностный монтаж	90-TFBGA	90-TFBGA (8x13)
IS42RM32400G-75BLI-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 128M PARALLEL 90TFBGA	Discontinued at -	Volatile	DRAM	SDRAM - Mobile	128Mb (4M x 32)	133MHz	-	6ns	Parallel	2.3 V ~ 3 V	-40°C ~ 85°C (TA)	SMD Поверхностный монтаж	90-TFBGA	90-TFBGA (8x13)
IS42RM32800D-75BL	ISSI, Integrated Silicon Solution Inc	IC DRAM 256M PARALLEL 90TFBGA	Discontinued at -	Volatile	DRAM	SDRAM - Mobile	256Mb (8M x 32)	133MHz	-	5.4ns	Parallel	2.3 V ~ 3 V	0°C ~ 70°C (TA)	SMD Поверхностный монтаж	90-TFBGA	90-TFBGA (8x13)
IS42RM32800D-75BLI	ISSI, Integrated Silicon Solution Inc	IC DRAM 256M PARALLEL 90TFBGA	Discontinued at -	Volatile	DRAM	SDRAM - Mobile	256Mb (8M x 32)	133MHz	-	5.4ns	Parallel	2.3 V ~ 3 V	-40°C ~ 85°C (TA)	SMD Поверхностный монтаж	90-TFBGA	90-TFBGA (8x13)
IS42RM32800D-75BLI-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 256M PARALLEL 90TFBGA	Discontinued at -	Volatile	DRAM	SDRAM - Mobile	256Mb (8M x 32)	133MHz	-	5.4ns	Parallel	2.3 V ~ 3 V	-40°C ~ 85°C (TA)	SMD Поверхностный монтаж	90-TFBGA	90-TFBGA (8x13)
IS42RM32800D-75BL-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 256M PARALLEL 90TFBGA	Discontinued at -	Volatile	DRAM	SDRAM - Mobile	256Mb (8M x 32)	133MHz	-	5.4ns	Parallel	2.3 V ~ 3 V	0°C ~ 70°C (TA)	SMD Поверхностный монтаж	90-TFBGA	90-TFBGA (8x13)
IS42S16100E-6BL	ISSI, Integrated Silicon Solution Inc	IC DRAM 16M PARALLEL 60TFBGA	устарелый	Volatile	DRAM	SDRAM	16Mb (1M x 16)	166MHz	-	5.5ns	Parallel	3 V ~ 3.6 V	0°C ~ 70°C (TA)	SMD Поверхностный монтаж	60-TFBGA	60-TFBGA (6.4x10.1)
IS42S16100E-6BLI	ISSI, Integrated Silicon Solution Inc	IC DRAM 16M PARALLEL 60TFBGA	устарелый	Volatile	DRAM	SDRAM	16Mb (1M x 16)	166MHz	-	5.5ns	Parallel	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	SMD Поверхностный монтаж	60-TFBGA	60-TFBGA (6.4x10.1)
IS42S16100E-6BLI-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 16M PARALLEL 60TFBGA	устарелый	Volatile	DRAM	SDRAM	16Mb (1M x 16)	166MHz	-	5.5ns	Parallel	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	SMD Поверхностный монтаж	60-TFBGA	60-TFBGA (6.4x10.1)
IS42S16100E-6BL-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 16M PARALLEL 60TFBGA	устарелый	Volatile	DRAM	SDRAM	16Mb (1M x 16)	166MHz	-	5.5ns	Parallel	3 V ~ 3.6 V	0°C ~ 70°C (TA)	SMD Поверхностный монтаж	60-TFBGA	60-TFBGA (6.4x10.1)
IS42S16100F-5TL	ISSI, Integrated Silicon Solution Inc	IC DRAM 16M PARALLEL 50TSOP II	устарелый	Volatile	DRAM	SDRAM	16Mb (1M x 16)	200MHz	-	5ns	Parallel	3 V ~ 3.6 V	0°C ~ 70°C (TA)	SMD Поверхностный монтаж	50-TSOP (0.400", 10.16mm Width)	50-TSOP II
IS42S16100F-5TL-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 16M PARALLEL 50TSOP II	устарелый	Volatile	DRAM	SDRAM	16Mb (1M x 16)	200MHz	-	5ns	Parallel	3 V ~ 3.6 V	0°C ~ 70°C (TA)	SMD Поверхностный монтаж	50-TSOP (0.400", 10.16mm Width)	50-TSOP II
IS42S16100F-6BL	ISSI, Integrated Silicon Solution Inc	IC DRAM 16M PARALLEL 60TFBGA	устарелый	Volatile	DRAM	SDRAM	16Mb (1M x 16)	166MHz	-	5.5ns	Parallel	3 V ~ 3.6 V	0°C ~ 70°C (TA)	SMD Поверхностный монтаж	60-TFBGA	60-TFBGA (6.4x10.1)
IS42S16100F-6BLI	ISSI, Integrated Silicon Solution Inc	IC DRAM 16M PARALLEL 60TFBGA	устарелый	Volatile	DRAM	SDRAM	16Mb (1M x 16)	166MHz	-	5.5ns	Parallel	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	SMD Поверхностный монтаж	60-TFBGA	60-TFBGA (6.4x10.1)
IS42S16100F-6BLI-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 16M PARALLEL 60TFBGA	устарелый	Volatile	DRAM	SDRAM	16Mb (1M x 16)	166MHz	-	5.5ns	Parallel	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	SMD Поверхностный монтаж	60-TFBGA	60-TFBGA (6.4x10.1)
IS42S16100F-6BL-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 16M PARALLEL 60TFBGA	устарелый	Volatile	DRAM	SDRAM	16Mb (1M x 16)	166MHz	-	5.5ns	Parallel	3 V ~ 3.6 V	0°C ~ 70°C (TA)	SMD Поверхностный монтаж	60-TFBGA	60-TFBGA (6.4x10.1)
IS42S16100F-6TL	ISSI, Integrated Silicon Solution Inc	IC DRAM 16M PARALLEL 50TSOP II	устарелый	Volatile	DRAM	SDRAM	16Mb (1M x 16)	166MHz	-	5.5ns	Parallel	3 V ~ 3.6 V	0°C ~ 70°C (TA)	SMD Поверхностный монтаж	50-TSOP (0.400", 10.16mm Width)	50-TSOP II
IS42S16100F-6TLI	ISSI, Integrated Silicon Solution Inc	IC DRAM 16M PARALLEL 50TSOP II	устарелый	Volatile	DRAM	SDRAM	16Mb (1M x 16)	166MHz	-	5.5ns	Parallel	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	SMD Поверхностный монтаж	50-TSOP (0.400", 10.16mm Width)	50-TSOP II
IS42S16100F-6TLI-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 16M PARALLEL 50TSOP II	устарелый	Volatile	DRAM	SDRAM	16Mb (1M x 16)	166MHz	-	5.5ns	Parallel	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	SMD Поверхностный монтаж	50-TSOP (0.400", 10.16mm Width)	50-TSOP II
IS42S16100F-6TL-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 16M PARALLEL 50TSOP II	устарелый	Volatile	DRAM	SDRAM	16Mb (1M x 16)	166MHz	-	5.5ns	Parallel	3 V ~ 3.6 V	0°C ~ 70°C (TA)	SMD Поверхностный монтаж	50-TSOP (0.400", 10.16mm Width)	50-TSOP II
IS42S16100F-7BL	ISSI, Integrated Silicon Solution Inc	IC DRAM 16M PARALLEL 60TFBGA	устарелый	Volatile	DRAM	SDRAM	16Mb (1M x 16)	143MHz	-	5.5ns	Parallel	3 V ~ 3.6 V	0°C ~ 70°C (TA)	SMD Поверхностный монтаж	60-TFBGA	60-TFBGA (6.4x10.1)
IS42S16100F-7BLI	ISSI, Integrated Silicon Solution Inc	IC DRAM 16M PARALLEL 60TFBGA	устарелый	Volatile	DRAM	SDRAM	16Mb (1M x 16)	143MHz	-	5.5ns	Parallel	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	SMD Поверхностный монтаж	60-TFBGA	60-TFBGA (6.4x10.1)
IS42S16100F-7BLI-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 16M PARALLEL 60TFBGA	устарелый	Volatile	DRAM	SDRAM	16Mb (1M x 16)	143MHz	-	5.5ns	Parallel	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	SMD Поверхностный монтаж	60-TFBGA	60-TFBGA (6.4x10.1)
IS42S16100F-7BL-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 16M PARALLEL 60TFBGA	устарелый	Volatile	DRAM	SDRAM	16Mb (1M x 16)	143MHz	-	5.5ns	Parallel	3 V ~ 3.6 V	0°C ~ 70°C (TA)	SMD Поверхностный монтаж	60-TFBGA	60-TFBGA (6.4x10.1)
IS42S16100F-7TLI	ISSI, Integrated Silicon Solution Inc	IC DRAM 16M PARALLEL 50TSOP II	устарелый	Volatile	DRAM	SDRAM	16Mb (1M x 16)	143MHz	-	5.5ns	Parallel	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	SMD Поверхностный монтаж	50-TSOP (0.400", 10.16mm Width)	50-TSOP II
IS42S16100F-7TLI-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 16M PARALLEL 50TSOP II	устарелый	Volatile	DRAM	SDRAM	16Mb (1M x 16)	143MHz	-	5.5ns	Parallel	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	SMD Поверхностный монтаж	50-TSOP (0.400", 10.16mm Width)	50-TSOP II
IS42S16100F-7TL-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 16M PARALLEL 50TSOP II	устарелый	Volatile	DRAM	SDRAM	16Mb (1M x 16)	143MHz	-	5.5ns	Parallel	3 V ~ 3.6 V	0°C ~ 70°C (TA)	SMD Поверхностный монтаж	50-TSOP (0.400", 10.16mm Width)	50-TSOP II
IS42S16160D-75ETL	ISSI, Integrated Silicon Solution Inc	IC DRAM 256M PARALLEL 54TSOP	устарелый	Volatile	DRAM	SDRAM	256Mb (16M x 16)	133MHz	-	5.5ns	Parallel	3 V ~ 3.6 V	0°C ~ 70°C (TA)	SMD Поверхностный монтаж	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
IS42S16160D-75ETLI	ISSI, Integrated Silicon Solution Inc	IC DRAM 256M PARALLEL 54TSOP	устарелый	Volatile	DRAM	SDRAM	256Mb (16M x 16)	133MHz	-	5.5ns	Parallel	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	SMD Поверхностный монтаж	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
IS42S16160D-75ETLI-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 256M PARALLEL 54TSOP	устарелый	Volatile	DRAM	SDRAM	256Mb (16M x 16)	133MHz	-	5.5ns	Parallel	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	SMD Поверхностный монтаж	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
IS42S16160D-75ETL-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 256M PARALLEL 54TSOP	устарелый	Volatile	DRAM	SDRAM	256Mb (16M x 16)	133MHz	-	5.5ns	Parallel	3 V ~ 3.6 V	0°C ~ 70°C (TA)	SMD Поверхностный монтаж	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
IS42S16320B-6BL	ISSI, Integrated Silicon Solution Inc	IC DRAM 512M PARALLEL 54WBGA	устарелый	Volatile	DRAM	SDRAM	512Mb (32M x 16)	166MHz	-	5.4ns	Parallel	3 V ~ 3.6 V	0°C ~ 70°C (TA)	SMD Поверхностный монтаж	54-TFBGA	54-WBGA (11x13)
IS42S16320B-6BLI	ISSI, Integrated Silicon Solution Inc	IC DRAM 512M PARALLEL 54WBGA	устарелый	Volatile	DRAM	SDRAM	512Mb (32M x 16)	166MHz	-	5.4ns	Parallel	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	SMD Поверхностный монтаж	54-TFBGA	54-WBGA (11x13)
IS42S16320B-6BLI-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 512M PARALLEL 54WBGA	устарелый	Volatile	DRAM	SDRAM	512Mb (32M x 16)	166MHz	-	5.4ns	Parallel	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	SMD Поверхностный монтаж	54-TFBGA	54-WBGA (11x13)

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