|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 90WBGA |
Discontinued at - | Volatile | DRAM | SDRAM - Mobile | 512Mb (16M x 32) | 133MHz | - | 5.4ns | Parallel | 2.7 V ~ 3.6 V | 0°C ~ 70°C (TA) | SMD Поверхностный монтаж | 90-LFBGA | 90-WBGA (8x13) |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 64M PARALLEL 90TFBGA |
Discontinued at - | Volatile | DRAM | SDRAM - Mobile | 64Mb (2M x 32) | 166MHz | - | 5.5ns | Parallel | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 90-TFBGA | 90-TFBGA (8x13) |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 64M PARALLEL 90TFBGA |
Discontinued at - | Volatile | DRAM | SDRAM - Mobile | 64Mb (2M x 32) | 166MHz | - | 5.5ns | Parallel | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 90-TFBGA | 90-TFBGA (8x13) |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 64M PARALLEL 90TFBGA |
Discontinued at - | Volatile | DRAM | SDRAM - Mobile | 64Mb (2M x 32) | 133MHz | - | 6ns | Parallel | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 90-TFBGA | 90-TFBGA (8x13) |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 64M PARALLEL 90TFBGA |
Discontinued at - | Volatile | DRAM | SDRAM - Mobile | 64Mb (2M x 32) | 133MHz | - | 6ns | Parallel | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 90-TFBGA | 90-TFBGA (8x13) |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 128M PARALLEL 90TFBGA |
Discontinued at - | Volatile | DRAM | SDRAM - Mobile | 128Mb (4M x 32) | 166MHz | - | 5.5ns | Parallel | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 90-TFBGA | 90-TFBGA (8x13) |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 128M PARALLEL 90TFBGA |
Discontinued at - | Volatile | DRAM | SDRAM - Mobile | 128Mb (4M x 32) | 166MHz | - | 5.5ns | Parallel | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 90-TFBGA | 90-TFBGA (8x13) |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 128M PARALLEL 90TFBGA |
Discontinued at - | Volatile | DRAM | SDRAM - Mobile | 128Mb (4M x 32) | 133MHz | - | 6ns | Parallel | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 90-TFBGA | 90-TFBGA (8x13) |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 128M PARALLEL 90TFBGA |
Discontinued at - | Volatile | DRAM | SDRAM - Mobile | 128Mb (4M x 32) | 133MHz | - | 6ns | Parallel | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 90-TFBGA | 90-TFBGA (8x13) |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 90TFBGA |
Discontinued at - | Volatile | DRAM | SDRAM - Mobile | 256Mb (8M x 32) | 166MHz | - | 5.5ns | Parallel | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 90-TFBGA | 90-TFBGA (8x13) |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 90TFBGA |
Discontinued at - | Volatile | DRAM | SDRAM - Mobile | 256Mb (8M x 32) | 166MHz | - | 5.5ns | Parallel | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 90-TFBGA | 90-TFBGA (8x13) |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 90TFBGA |
Discontinued at - | Volatile | DRAM | SDRAM - Mobile | 256Mb (8M x 32) | 133MHz | - | 6ns | Parallel | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 90-TFBGA | 90-TFBGA (8x13) |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 90TFBGA |
Discontinued at - | Volatile | DRAM | SDRAM - Mobile | 256Mb (8M x 32) | 133MHz | - | 6ns | Parallel | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 90-TFBGA | 90-TFBGA (8x13) |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 54TFBGA |
Discontinued at - | Volatile | DRAM | SDRAM - Mobile | 256Mb (16M x 16) | 166MHz | - | 5.5ns | Parallel | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 54-TFBGA | 54-TFBGA (8x8) |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 54TFBGA |
Discontinued at - | Volatile | DRAM | SDRAM - Mobile | 256Mb (16M x 16) | 166MHz | - | 5.5ns | Parallel | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 54-TFBGA | 54-TFBGA (8x8) |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 54TFBGA |
Discontinued at - | Volatile | DRAM | SDRAM - Mobile | 256Mb (16M x 16) | 133MHz | - | 6ns | Parallel | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 54-TFBGA | 54-TFBGA (8x8) |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 54TFBGA |
Discontinued at - | Volatile | DRAM | SDRAM - Mobile | 256Mb (16M x 16) | 133MHz | - | 6ns | Parallel | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 54-TFBGA | 54-TFBGA (8x8) |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 64M PARALLEL 54TFBGA |
Discontinued at - | Volatile | DRAM | SDRAM - Mobile | 64Mb (4M x 16) | 166MHz | - | 5.5ns | Parallel | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 54-TFBGA | 54-TFBGA (8x8) |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 64M PARALLEL 54TFBGA |
Discontinued at - | Volatile | DRAM | SDRAM - Mobile | 64Mb (4M x 16) | 166MHz | - | 5.5ns | Parallel | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 54-TFBGA | 54-TFBGA (8x8) |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 64M PARALLEL 54TFBGA |
Discontinued at - | Volatile | DRAM | SDRAM - Mobile | 64Mb (4M x 16) | 133MHz | - | 6ns | Parallel | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 54-TFBGA | 54-TFBGA (8x8) |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 64M PARALLEL 54TFBGA |
Discontinued at - | Volatile | DRAM | SDRAM - Mobile | 64Mb (4M x 16) | 133MHz | - | 6ns | Parallel | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 54-TFBGA | 54-TFBGA (8x8) |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 128M PARALLEL 54TFBGA |
Discontinued at - | Volatile | DRAM | SDRAM - Mobile | 128Mb (8M x 16) | 166MHz | - | 5.5ns | Parallel | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 54-TFBGA | 54-TFBGA (8x8) |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 128M PARALLEL 54TFBGA |
Discontinued at - | Volatile | DRAM | SDRAM - Mobile | 128Mb (8M x 16) | 166MHz | - | 5.5ns | Parallel | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 54-TFBGA | 54-TFBGA (8x8) |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 128M PARALLEL 54TFBGA |
Discontinued at - | Volatile | DRAM | SDRAM - Mobile | 128Mb (8M x 16) | 133MHz | - | 6ns | Parallel | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 54-TFBGA | 54-TFBGA (8x8) |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 128M PARALLEL 54TFBGA |
Discontinued at - | Volatile | DRAM | SDRAM - Mobile | 128Mb (8M x 16) | 133MHz | - | 6ns | Parallel | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 54-TFBGA | 54-TFBGA (8x8) |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 64M PARALLEL 90TFBGA |
Discontinued at - | Volatile | DRAM | SDRAM - Mobile | 64Mb (2M x 32) | 166MHz | - | 5.5ns | Parallel | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 90-TFBGA | 90-TFBGA (8x13) |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 64M PARALLEL 90TFBGA |
Discontinued at - | Volatile | DRAM | SDRAM - Mobile | 64Mb (2M x 32) | 166MHz | - | 5.5ns | Parallel | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 90-TFBGA | 90-TFBGA (8x13) |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 64M PARALLEL 90TFBGA |
Discontinued at - | Volatile | DRAM | SDRAM - Mobile | 64Mb (2M x 32) | 133MHz | - | 6ns | Parallel | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 90-TFBGA | 90-TFBGA (8x13) |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 64M PARALLEL 90TFBGA |
Discontinued at - | Volatile | DRAM | SDRAM - Mobile | 64Mb (2M x 32) | 133MHz | - | 6ns | Parallel | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 90-TFBGA | 90-TFBGA (8x13) |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 128M PARALLEL 90TFBGA |
Discontinued at - | Volatile | DRAM | SDRAM - Mobile | 128Mb (4M x 32) | 166MHz | - | 5.5ns | Parallel | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 90-TFBGA | 90-TFBGA (8x13) |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 128M PARALLEL 90TFBGA |
Discontinued at - | Volatile | DRAM | SDRAM - Mobile | 128Mb (4M x 32) | 166MHz | - | 5.5ns | Parallel | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 90-TFBGA | 90-TFBGA (8x13) |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 128M PARALLEL 90TFBGA |
Discontinued at - | Volatile | DRAM | SDRAM - Mobile | 128Mb (4M x 32) | 133MHz | - | 6ns | Parallel | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 90-TFBGA | 90-TFBGA (8x13) |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 128M PARALLEL 90TFBGA |
Discontinued at - | Volatile | DRAM | SDRAM - Mobile | 128Mb (4M x 32) | 133MHz | - | 6ns | Parallel | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 90-TFBGA | 90-TFBGA (8x13) |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 90TFBGA |
Discontinued at - | Volatile | DRAM | SDRAM - Mobile | 256Mb (8M x 32) | 166MHz | - | 5.5ns | Parallel | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 90-TFBGA | 90-TFBGA (8x13) |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 90TFBGA |
Discontinued at - | Volatile | DRAM | SDRAM - Mobile | 256Mb (8M x 32) | 166MHz | - | 5.5ns | Parallel | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 90-TFBGA | 90-TFBGA (8x13) |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 90TFBGA |
Discontinued at - | Volatile | DRAM | SDRAM - Mobile | 256Mb (8M x 32) | 133MHz | - | 6ns | Parallel | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 90-TFBGA | 90-TFBGA (8x13) |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 90TFBGA |
Discontinued at - | Volatile | DRAM | SDRAM - Mobile | 256Mb (8M x 32) | 133MHz | - | 6ns | Parallel | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 90-TFBGA | 90-TFBGA (8x13) |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 84TWBGA |
устарелый | Volatile | DRAM | SDRAM - DDR2 | 256Mb (16M x 16) | 400MHz | 15ns | 400ns | Parallel | 1.7 V ~ 1.9 V | 0°C ~ 70°C (TA) | SMD Поверхностный монтаж | 84-TFBGA | 84-TWBGA (8x12.5) |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 84TWBGA |
устарелый | Volatile | DRAM | SDRAM - DDR2 | 256Mb (16M x 16) | 400MHz | 15ns | 400ns | Parallel | 1.7 V ~ 1.9 V | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 84-TFBGA | 84-TWBGA (8x12.5) |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 84TWBGA |
устарелый | Volatile | DRAM | SDRAM - DDR2 | 256Mb (16M x 16) | 400MHz | 15ns | 400ns | Parallel | 1.7 V ~ 1.9 V | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 84-TFBGA | 84-TWBGA (8x12.5) |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 84TWBGA |
устарелый | Volatile | DRAM | SDRAM - DDR2 | 256Mb (16M x 16) | 400MHz | 15ns | 400ns | Parallel | 1.7 V ~ 1.9 V | 0°C ~ 70°C (TA) | SMD Поверхностный монтаж | 84-TFBGA | 84-TWBGA (8x12.5) |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 84TWBGA |
устарелый | Volatile | DRAM | SDRAM - DDR2 | 256Mb (16M x 16) | 266MHz | 15ns | 500ps | Parallel | 1.7 V ~ 1.9 V | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 84-TFBGA | 84-TWBGA (8x12.5) |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 84TWBGA |
устарелый | Volatile | DRAM | SDRAM - DDR2 | 256Mb (16M x 16) | 266MHz | 15ns | 500ps | Parallel | 1.7 V ~ 1.9 V | 0°C ~ 85°C (TA) | SMD Поверхностный монтаж | 84-TFBGA | 84-TWBGA (8x12.5) |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 84TWBGA |
устарелый | Volatile | DRAM | SDRAM - DDR2 | 256Mb (16M x 16) | 333MHz | 15ns | 450ps | Parallel | 1.7 V ~ 1.9 V | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 84-TFBGA | 84-TWBGA (8x12.5) |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 84TWBGA |
устарелый | Volatile | DRAM | SDRAM - DDR2 | 256Mb (16M x 16) | 333MHz | 15ns | 450ps | Parallel | 1.7 V ~ 1.9 V | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 84-TFBGA | 84-TWBGA (8x12.5) |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 84TWBGA |
устарелый | Volatile | DRAM | SDRAM - DDR2 | 256Mb (16M x 16) | 333MHz | 15ns | 450ps | Parallel | 1.7 V ~ 1.9 V | 0°C ~ 70°C (TA) | SMD Поверхностный монтаж | 84-TFBGA | 84-TWBGA (8x12.5) |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 84TWBGA |
устарелый | Volatile | DRAM | SDRAM - DDR2 | 256Mb (16M x 16) | 333MHz | 15ns | 450ps | Parallel | 1.7 V ~ 1.9 V | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 84-TFBGA | 84-TWBGA (8x12.5) |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 84TWBGA |
устарелый | Volatile | DRAM | SDRAM - DDR2 | 256Mb (16M x 16) | 333MHz | 15ns | 450ps | Parallel | 1.7 V ~ 1.9 V | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 84-TFBGA | 84-TWBGA (8x12.5) |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 84TWBGA |
устарелый | Volatile | DRAM | SDRAM - DDR2 | 256Mb (16M x 16) | 333MHz | 15ns | 450ps | Parallel | 1.7 V ~ 1.9 V | 0°C ~ 70°C (TA) | SMD Поверхностный монтаж | 84-TFBGA | 84-TWBGA (8x12.5) |
|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 84TWBGA |
устарелый | Volatile | DRAM | SDRAM - DDR2 | 256Mb (16M x 16) | 200MHz | 15ns | 600ps | Parallel | 1.7 V ~ 1.9 V | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 84-TFBGA | 84-TWBGA (8x12.5) |