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ISSI, Integrated Silicon Solution Inc IC DRAM 256M PARALLEL 84TWBGA устарелыйVolatileDRAMSDRAM - DDR2256Mb (16M x 16)200MHz15ns600psParallel1.7 V ~ 1.9 V-40°C ~ 85°C (TA)SMD Поверхностный монтаж84-TFBGA84-TWBGA (8x12.5)
ISSI, Integrated Silicon Solution Inc IC DRAM 512M PARALLEL 60TWBGA в производствеVolatileDRAMSDRAM - DDR2512Mb (64M x 8)333MHz15ns450psParallel1.7 V ~ 1.9 V-40°C ~ 85°C (TA)SMD Поверхностный монтаж60-TFBGA60-TWBGA (8x10.5)
ISSI, Integrated Silicon Solution Inc IC DRAM 512M PARALLEL 60TWBGA в производствеVolatileDRAMSDRAM - DDR2512Mb (64M x 8)333MHz15ns450psParallel1.7 V ~ 1.9 V-40°C ~ 85°C (TA)SMD Поверхностный монтаж60-TFBGA60-TWBGA (8x10.5)
ISSI, Integrated Silicon Solution Inc IC DRAM 256M PARALLEL 60TFBGA устарелыйVolatileDRAMSDRAM - Mobile LPDDR256Mb (16M x 16)166MHz15ns5.5nsParallel1.7 V ~ 1.95 V0°C ~ 70°C (TA)SMD Поверхностный монтаж60-TFBGA60-TFBGA (8x10)
ISSI, Integrated Silicon Solution Inc IC DRAM 256M PARALLEL 60TFBGA устарелыйVolatileDRAMSDRAM - Mobile LPDDR256Mb (16M x 16)166MHz15ns5.5nsParallel1.7 V ~ 1.95 V-40°C ~ 85°C (TA)SMD Поверхностный монтаж60-TFBGA60-TFBGA (8x10)
ISSI, Integrated Silicon Solution Inc IC DRAM 256M PARALLEL 60TFBGA устарелыйVolatileDRAMSDRAM - Mobile LPDDR256Mb (16M x 16)166MHz15ns5.5nsParallel1.7 V ~ 1.95 V-40°C ~ 85°C (TA)SMD Поверхностный монтаж60-TFBGA60-TFBGA (8x10)
ISSI, Integrated Silicon Solution Inc IC DRAM 256M PARALLEL 60TFBGA устарелыйVolatileDRAMSDRAM - Mobile LPDDR256Mb (16M x 16)166MHz15ns5.5nsParallel1.7 V ~ 1.95 V0°C ~ 70°C (TA)SMD Поверхностный монтаж60-TFBGA60-TFBGA (8x10)
ISSI, Integrated Silicon Solution Inc IC DRAM 32M PARALLEL 60TFBGA устарелыйVolatileDRAMSDRAM - Mobile LPDDR32Mb (2M x 16)166MHz12ns5.5nsParallel1.7 V ~ 1.95 V0°C ~ 70°C (TA)SMD Поверхностный монтаж60-TFBGA60-TFBGA (8x10)
ISSI, Integrated Silicon Solution Inc IC DRAM 32M PARALLEL 60TFBGA устарелыйVolatileDRAMSDRAM - Mobile LPDDR32Mb (2M x 16)166MHz12ns5.5nsParallel1.7 V ~ 1.95 V-40°C ~ 85°C (TA)SMD Поверхностный монтаж60-TFBGA60-TFBGA (8x10)
ISSI, Integrated Silicon Solution Inc IC DRAM 32M PARALLEL 60TFBGA устарелыйVolatileDRAMSDRAM - Mobile LPDDR32Mb (2M x 16)166MHz12ns5.5nsParallel1.7 V ~ 1.95 V-40°C ~ 85°C (TA)SMD Поверхностный монтаж60-TFBGA60-TFBGA (8x10)
ISSI, Integrated Silicon Solution Inc IC DRAM 32M PARALLEL 60TFBGA устарелыйVolatileDRAMSDRAM - Mobile LPDDR32Mb (2M x 16)166MHz12ns5.5nsParallel1.7 V ~ 1.95 V0°C ~ 70°C (TA)SMD Поверхностный монтаж60-TFBGA60-TFBGA (8x10)
ISSI, Integrated Silicon Solution Inc IC DRAM 64M PARALLEL 60TFBGA устарелыйVolatileDRAMSDRAM - Mobile LPDDR64Mb (4M x 16)166MHz15ns5.5nsParallel1.7 V ~ 1.95 V-40°C ~ 85°C (TA)SMD Поверхностный монтаж60-TFBGA60-TFBGA (8x10)
ISSI, Integrated Silicon Solution Inc IC DRAM 64M PARALLEL 60TFBGA устарелыйVolatileDRAMSDRAM - Mobile LPDDR64Mb (4M x 16)166MHz15ns5.5nsParallel1.7 V ~ 1.95 V-40°C ~ 85°C (TA)SMD Поверхностный монтаж60-TFBGA60-TFBGA (8x10)
ISSI, Integrated Silicon Solution Inc IC DRAM 128M PARALLEL 60TFBGA устарелыйVolatileDRAMSDRAM - Mobile LPDDR128Mb (8M x 16)166MHz15ns5.5nsParallel1.7 V ~ 1.95 V0°C ~ 70°C (TA)SMD Поверхностный монтаж60-TFBGA60-TFBGA (8x10)
ISSI, Integrated Silicon Solution Inc IC DRAM 128M PARALLEL 60TFBGA устарелыйVolatileDRAMSDRAM - Mobile LPDDR128Mb (8M x 16)166MHz15ns5.5nsParallel1.7 V ~ 1.95 V-40°C ~ 85°C (TA)SMD Поверхностный монтаж60-TFBGA60-TFBGA (8x10)
ISSI, Integrated Silicon Solution Inc IC DRAM 128M PARALLEL 60TFBGA устарелыйVolatileDRAMSDRAM - Mobile LPDDR128Mb (8M x 16)166MHz15ns5.5nsParallel1.7 V ~ 1.95 V0°C ~ 70°C (TA)SMD Поверхностный монтаж60-TFBGA60-TFBGA (8x10)
ISSI, Integrated Silicon Solution Inc IC DRAM 32M PARALLEL 90TFBGA устарелыйVolatileDRAMSDRAM - Mobile LPDDR32Mb (1M x 32)166MHz12ns5.5nsParallel1.7 V ~ 1.95 V0°C ~ 70°C (TA)SMD Поверхностный монтаж90-TFBGA90-TFBGA (8x13)
ISSI, Integrated Silicon Solution Inc IC DRAM 32M PARALLEL 90TFBGA устарелыйVolatileDRAMSDRAM - Mobile LPDDR32Mb (1M x 32)166MHz12ns5.5nsParallel1.7 V ~ 1.95 V-40°C ~ 85°C (TA)SMD Поверхностный монтаж90-TFBGA90-TFBGA (8x13)
ISSI, Integrated Silicon Solution Inc IC DRAM 32M PARALLEL 90TFBGA устарелыйVolatileDRAMSDRAM - Mobile LPDDR32Mb (1M x 32)166MHz12ns5.5nsParallel1.7 V ~ 1.95 V-40°C ~ 85°C (TA)SMD Поверхностный монтаж90-TFBGA90-TFBGA (8x13)
ISSI, Integrated Silicon Solution Inc IC DRAM 32M PARALLEL 90TFBGA устарелыйVolatileDRAMSDRAM - Mobile LPDDR32Mb (1M x 32)166MHz12ns5.5nsParallel1.7 V ~ 1.95 V0°C ~ 70°C (TA)SMD Поверхностный монтаж90-TFBGA90-TFBGA (8x13)
ISSI, Integrated Silicon Solution Inc IC DRAM 64M PARALLEL 90TFBGA устарелыйVolatileDRAMSDRAM - Mobile LPDDR64Mb (2M x 32)166MHz15ns5.5nsParallel1.7 V ~ 1.95 V-40°C ~ 85°C (TA)SMD Поверхностный монтаж90-TFBGA90-TFBGA (8x13)
ISSI, Integrated Silicon Solution Inc IC DRAM 64M PARALLEL 90TFBGA устарелыйVolatileDRAMSDRAM - Mobile LPDDR64Mb (2M x 32)166MHz15ns5.5nsParallel1.7 V ~ 1.95 V-40°C ~ 85°C (TA)SMD Поверхностный монтаж90-TFBGA90-TFBGA (8x13)
ISSI, Integrated Silicon Solution Inc IC DRAM 128M PARALLEL 90TFBGA устарелыйVolatileDRAMSDRAM - Mobile LPDDR128Mb (4M x 32)166MHz15ns5.5nsParallel1.7 V ~ 1.95 V0°C ~ 70°C (TA)SMD Поверхностный монтаж90-TFBGA90-TFBGA (8x13)
ISSI, Integrated Silicon Solution Inc IC DRAM 128M PARALLEL 90TFBGA устарелыйVolatileDRAMSDRAM - Mobile LPDDR128Mb (4M x 32)166MHz15ns5.5nsParallel1.7 V ~ 1.95 V-40°C ~ 85°C (TA)SMD Поверхностный монтаж90-TFBGA90-TFBGA (8x13)
ISSI, Integrated Silicon Solution Inc IC DRAM 128M PARALLEL 90TFBGA устарелыйVolatileDRAMSDRAM - Mobile LPDDR128Mb (4M x 32)166MHz15ns5.5nsParallel1.7 V ~ 1.95 V0°C ~ 70°C (TA)SMD Поверхностный монтаж90-TFBGA90-TFBGA (8x13)
ISSI, Integrated Silicon Solution Inc IC DRAM 256M PARALLEL 90TFBGA устарелыйVolatileDRAMSDRAM - Mobile LPDDR256Mb (8M x 32)166MHz15ns5.5nsParallel1.7 V ~ 1.95 V0°C ~ 70°C (TA)SMD Поверхностный монтаж90-TFBGA90-TFBGA (8x13)
ISSI, Integrated Silicon Solution Inc IC DRAM 256M PARALLEL 90TFBGA устарелыйVolatileDRAMSDRAM - Mobile LPDDR256Mb (8M x 32)166MHz15ns5.5nsParallel1.7 V ~ 1.95 V-40°C ~ 85°C (TA)SMD Поверхностный монтаж90-TFBGA90-TFBGA (8x13)
ISSI, Integrated Silicon Solution Inc IC DRAM 256M PARALLEL 90TFBGA устарелыйVolatileDRAMSDRAM - Mobile LPDDR256Mb (8M x 32)166MHz15ns5.5nsParallel1.7 V ~ 1.95 V-40°C ~ 85°C (TA)SMD Поверхностный монтаж90-TFBGA90-TFBGA (8x13)
ISSI, Integrated Silicon Solution Inc IC DRAM 256M PARALLEL 90TFBGA устарелыйVolatileDRAMSDRAM - Mobile LPDDR256Mb (8M x 32)166MHz15ns5.5nsParallel1.7 V ~ 1.95 V0°C ~ 70°C (TA)SMD Поверхностный монтаж90-TFBGA90-TFBGA (8x13)
ISSI, Integrated Silicon Solution Inc IC DRAM 2G PARALLEL 96TWBGA Discontinued at -VolatileDRAMSDRAM - DDR32Gb (128M x 16)800MHz15ns20nsParallel1.425 V ~ 1.575 V0°C ~ 95°C (TC)SMD Поверхностный монтаж96-TFBGA96-TWBGA (9x13)
ISSI, Integrated Silicon Solution Inc IC DRAM 2G PARALLEL 96TWBGA Discontinued at -VolatileDRAMSDRAM - DDR32Gb (128M x 16)800MHz15ns20nsParallel1.425 V ~ 1.575 V-40°C ~ 95°C (TC)SMD Поверхностный монтаж96-TFBGA96-TWBGA (9x13)
ISSI, Integrated Silicon Solution Inc IC DRAM 2G PARALLEL 96TWBGA Discontinued at -VolatileDRAMSDRAM - DDR32Gb (128M x 16)800MHz15ns20nsParallel1.425 V ~ 1.575 V-40°C ~ 95°C (TC)SMD Поверхностный монтаж96-TFBGA96-TWBGA (9x13)
ISSI, Integrated Silicon Solution Inc IC DRAM 2G PARALLEL 96TWBGA Discontinued at -VolatileDRAMSDRAM - DDR32Gb (128M x 16)800MHz15ns20nsParallel1.425 V ~ 1.575 V0°C ~ 95°C (TC)SMD Поверхностный монтаж96-TFBGA96-TWBGA (9x13)
ISSI, Integrated Silicon Solution Inc IC DRAM 2G PARALLEL 96TWBGA Discontinued at -VolatileDRAMSDRAM - DDR32Gb (128M x 16)667MHz15ns20nsParallel1.425 V ~ 1.575 V0°C ~ 95°C (TC)SMD Поверхностный монтаж96-TFBGA96-TWBGA (9x13)
ISSI, Integrated Silicon Solution Inc IC DRAM 2G PARALLEL 96TWBGA Discontinued at -VolatileDRAMSDRAM - DDR32Gb (128M x 16)667MHz15ns20nsParallel1.425 V ~ 1.575 V-40°C ~ 95°C (TC)SMD Поверхностный монтаж96-TFBGA96-TWBGA (9x13)
ISSI, Integrated Silicon Solution Inc IC DRAM 2G PARALLEL 96TWBGA Discontinued at -VolatileDRAMSDRAM - DDR32Gb (128M x 16)667MHz15ns20nsParallel1.425 V ~ 1.575 V-40°C ~ 95°C (TC)SMD Поверхностный монтаж96-TFBGA96-TWBGA (9x13)
ISSI, Integrated Silicon Solution Inc IC DRAM 2G PARALLEL 96TWBGA Discontinued at -VolatileDRAMSDRAM - DDR32Gb (128M x 16)667MHz15ns20nsParallel1.425 V ~ 1.575 V0°C ~ 95°C (TC)SMD Поверхностный монтаж96-TFBGA96-TWBGA (9x13)
ISSI, Integrated Silicon Solution Inc IC DRAM 2G PARALLEL 96TWBGA Discontinued at -VolatileDRAMSDRAM - DDR3L2Gb (128M x 16)800MHz15ns20nsParallel1.283 V ~ 1.45 V-40°C ~ 95°C (TC)SMD Поверхностный монтаж96-TFBGA96-TWBGA (9x13)
ISSI, Integrated Silicon Solution Inc IC DRAM 2G PARALLEL 96TWBGA Discontinued at -VolatileDRAMSDRAM - DDR3L2Gb (128M x 16)800MHz15ns20nsParallel1.283 V ~ 1.45 V-40°C ~ 95°C (TC)SMD Поверхностный монтаж96-TFBGA96-TWBGA (9x13)
ISSI, Integrated Silicon Solution Inc IC DRAM 2G PARALLEL 96TWBGA Discontinued at -VolatileDRAMSDRAM - DDR3L2Gb (128M x 16)800MHz15ns20nsParallel1.283 V ~ 1.45 V0°C ~ 95°C (TC)SMD Поверхностный монтаж96-TFBGA96-TWBGA (9x13)
ISSI, Integrated Silicon Solution Inc IC DRAM 2G PARALLEL 96TWBGA Discontinued at -VolatileDRAMSDRAM - DDR3L2Gb (128M x 16)667MHz15ns20nsParallel1.283 V ~ 1.45 V0°C ~ 95°C (TC)SMD Поверхностный монтаж96-TFBGA96-TWBGA (9x13)
ISSI, Integrated Silicon Solution Inc IC DRAM 2G PARALLEL 96TWBGA Discontinued at -VolatileDRAMSDRAM - DDR3L2Gb (128M x 16)667MHz15ns20nsParallel1.283 V ~ 1.45 V-40°C ~ 95°C (TC)SMD Поверхностный монтаж96-TFBGA96-TWBGA (9x13)
ISSI, Integrated Silicon Solution Inc IC DRAM 2G PARALLEL 96TWBGA Discontinued at -VolatileDRAMSDRAM - DDR3L2Gb (128M x 16)667MHz15ns20nsParallel1.283 V ~ 1.45 V-40°C ~ 95°C (TC)SMD Поверхностный монтаж96-TFBGA96-TWBGA (9x13)
ISSI, Integrated Silicon Solution Inc IC DRAM 2G PARALLEL 96TWBGA Discontinued at -VolatileDRAMSDRAM - DDR3L2Gb (128M x 16)667MHz15ns20nsParallel1.283 V ~ 1.45 V0°C ~ 95°C (TC)SMD Поверхностный монтаж96-TFBGA96-TWBGA (9x13)
ISSI, Integrated Silicon Solution Inc IC DRAM 1G PARALLEL 96TWBGA Discontinued at -VolatileDRAMSDRAM - DDR31Gb (64M x 16)800MHz15ns20nsParallel1.425 V ~ 1.575 V0°C ~ 95°C (TC)SMD Поверхностный монтаж96-TFBGA96-TWBGA (9x13)
ISSI, Integrated Silicon Solution Inc IC DRAM 1G PARALLEL 96TWBGA Discontinued at -VolatileDRAMSDRAM - DDR31Gb (64M x 16)800MHz15ns20nsParallel1.425 V ~ 1.575 V-40°C ~ 95°C (TC)SMD Поверхностный монтаж96-TFBGA96-TWBGA (9x13)
ISSI, Integrated Silicon Solution Inc IC DRAM 1G PARALLEL 96TWBGA Discontinued at -VolatileDRAMSDRAM - DDR31Gb (64M x 16)800MHz15ns20nsParallel1.425 V ~ 1.575 V-40°C ~ 95°C (TC)SMD Поверхностный монтаж96-TFBGA96-TWBGA (9x13)
ISSI, Integrated Silicon Solution Inc IC DRAM 1G PARALLEL 96TWBGA Discontinued at -VolatileDRAMSDRAM - DDR31Gb (64M x 16)800MHz15ns20nsParallel1.425 V ~ 1.575 V0°C ~ 95°C (TC)SMD Поверхностный монтаж96-TFBGA96-TWBGA (9x13)
ISSI, Integrated Silicon Solution Inc IC DRAM 1G PARALLEL 96TWBGA Discontinued at -VolatileDRAMSDRAM - DDR31Gb (64M x 16)667MHz15ns20nsParallel1.425 V ~ 1.575 V0°C ~ 95°C (TC)SMD Поверхностный монтаж96-TFBGA96-TWBGA (9x13)
ISSI, Integrated Silicon Solution Inc IC DRAM 1G PARALLEL 96TWBGA Discontinued at -VolatileDRAMSDRAM - DDR31Gb (64M x 16)667MHz15ns20nsParallel1.425 V ~ 1.575 V-40°C ~ 95°C (TC)SMD Поверхностный монтаж96-TFBGA96-TWBGA (9x13)
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