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ON Semiconductor |
DIODE SCHOTTKY 200V 3A DO214AA |
в производстве | Schottky | 200V | 3A | 900mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 7µA @ 200V | - | SMD Поверхностный монтаж | DO-214AA, SMB | DO-214AA (SMB) | -65°C ~ 150°C |
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ON Semiconductor |
DIODE SCHOTTKY 200V 3A SMB |
в производстве | Schottky | 200V | 3A | 840mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 200V | - | SMD Поверхностный монтаж | DO-214AA, SMB | SMB | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 400V 3A SMC |
в производстве | Standard | 400V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 400V | - | SMD Поверхностный монтаж | DO-214AB, SMC | SMC | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 1KV 4A DO201AD |
в производстве | Standard | 1000V | 4A | 1.85V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 25µA @ 1000V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 35V 8A DPAK |
в производстве | Schottky | 35V | 8A | 510mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.4mA @ 35V | - | SMD Поверхностный монтаж | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -65°C ~ 150°C |
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ON Semiconductor |
DIODE SCHOTTKY 40V 3A DPAK |
в производстве | Schottky | 40V | 3A | 600mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 40V | - | SMD Поверхностный монтаж | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -65°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 100V 3A SMC |
в производстве | Schottky | 100V | 3A | 790mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 100V | - | SMD Поверхностный монтаж | DO-214AB, SMC | SMC | -65°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 100V 1A SOD123FL |
в производстве | Schottky | 100V | 1A | 760mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 40µA @ 100V | - | SMD Поверхностный монтаж | SOD-123F | SOD-123FL | -65°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 120V 12A TO277-3 |
в производстве | Schottky | 120V | 12A | 790mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 25µA @ 120V | - | SMD Поверхностный монтаж | TO-277, 3-PowerDFN | TO-277-3 | -55°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 200V 10A DPAK |
в производстве | Standard | 200V | 10A | 1.15V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 20.8ns | 100µA @ 200V | - | SMD Поверхностный монтаж | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | -65°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 100V 2A POWERMITE |
в производстве | Schottky | 100V | 2A | 840mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20µA @ 100V | - | SMD Поверхностный монтаж | DO-216AA | Powermite | -65°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 100V 15A TO277-3 |
в производстве | Schottky | 100V | 15A | 660mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 80µA @ 100V | - | SMD Поверхностный монтаж | TO-277, 3-PowerDFN | TO-277-3 | -55°C ~ 150°C |
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ON Semiconductor |
DIODE SCHOTTKY 60V 10A TO277-3 |
в производстве | Schottky | 60V | 10A | 520mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 220µA @ 60V | 550pF @ 4V, 1MHz | SMD Поверхностный монтаж | TO-277, 3-PowerDFN | TO-277-3 | -55°C ~ 150°C |
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ON Semiconductor |
DIODE SCHOTTKY 45V 10A TO277-3 |
в производстве | Schottky | 45V | 10A | 440mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 220µA @ 45V | 820pF @ 4V, 1MHz | SMD Поверхностный монтаж | TO-277, 3-PowerDFN | TO-277-3 | -55°C ~ 150°C |
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ON Semiconductor |
DIODE SCHOTTKY 100V 3A SMC |
в производстве | Schottky | 100V | 3A | 790mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 100V | - | SMD Поверхностный монтаж | DO-214AB, SMC | SMC | -65°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 60V 3A SMC |
в производстве | Schottky | 60V | 3A | 630mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 30µA @ 60V | - | SMD Поверхностный монтаж | DO-214AB, SMC | SMC | -65°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 100V 2A SMA |
в производстве | Schottky | 100V | 2A | 790mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 8µA @ 100V | - | SMD Поверхностный монтаж | DO-214AC, SMA | SMA | -65°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 100V 5A DO201AD |
в производстве | Schottky | 100V | 5A | 850mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 100V | 380pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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ON Semiconductor |
DIODE SCHOTTKY 100V 20A TO277-3 |
в производстве | Schottky | 100V | 20A | 660mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 80µA @ 100V | - | SMD Поверхностный монтаж | TO-277, 3-PowerDFN | TO-277-3 | -55°C ~ 150°C |
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ON Semiconductor |
DIODE SCHOTTKY 200V 4A SMC |
в производстве | Schottky | 200V | 4A | 860mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 1mA @ 200V | - | SMD Поверхностный монтаж | DO-214AB, SMC | SMC | -55°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 300V 5A DPAK |
в производстве | Standard | 300V | 5A | 1.05V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 300V | - | SMD Поверхностный монтаж | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -55°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 45V 12A DO201AD |
в производстве | Schottky | 45V | 12A | 550mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 45V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 600V 8A TO220AC |
в производстве | Standard | 600V | 8A | 1.5V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 10µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 100V 10A TO220-2 |
в производстве | Schottky | 100V | 10A | 800mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Through Hole | TO-220-2 | TO-220-2 | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 1KV 8A TO220-2 |
в производстве | Standard | 1000V | 8A | 1.8V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 25µA @ 1000V | - | Through Hole | TO-220-2 | TO-220-2 | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 400V 15A TO220-2 |
в производстве | Standard | 400V | 15A | 1.25V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 10µA @ 400V | - | Through Hole | TO-220-2 | TO-220-2 | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 200V 30A TO220F |
в производстве | Standard | 200V | 30A | 1.15V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 100µA @ 200V | - | Through Hole | TO-220-2 Full Pack | TO-220F-2L | -65°C ~ 150°C |
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ON Semiconductor |
DIODE SCHOTTKY 250V 40A TO220AB |
в производстве | Schottky | 250V | 40A | 970mV @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 30µA @ 250V | 500pF @ 5V, 1MHz | Through Hole | TO-220-3 | TO-220AB | -65°C ~ 150°C |
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ON Semiconductor |
DIODE SCHOTTKY 30V 40A D2PAK |
в производстве | Schottky | 30V | 40A | 550mV @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | - | 350µA @ 30V | - | SMD Поверхностный монтаж | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -65°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 250V 40A TO220-2 |
в производстве | Schottky | 250V | 40A | 970mV @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 30µA @ 250V | 500pF @ 5V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -65°C ~ 150°C |
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ON Semiconductor |
DIODE SCHOTTKY 250V 40A D2PAK |
в производстве | Schottky | 250V | 40A | 970mV @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 250µA @ 250V | 500pF @ 5V, 1MHz | SMD Поверхностный монтаж | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -65°C ~ 150°C |
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ON Semiconductor |
DIODE SCHOTTKY 250V 40A TO220FP |
в производстве | Schottky | 250V | 40A | 970mV @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 30µA @ 250V | 500pF @ 5V, 1MHz | Through Hole | TO-220-3 Full Pack | TO-220FP | -65°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 600V 30A TO247 |
в производстве | Standard | 600V | 30A | 2.6V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 100µA @ 600V | - | Through Hole | TO-247-2 | TO-247-2 | -65°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 1KV 80A TO247 |
в производстве | Standard | 1000V | 80A | 1.9V @ 80A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 250µA @ 1000V | - | Through Hole | TO-247-2 | TO-247-2 | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 15V 150MA DO35 |
в производстве | Standard | 15V | 150mA (DC) | 1.1V @ 50mA | Small Signal =< 200mA (Io), Any Speed | - | 15pA @ 15V | 2pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |
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ON Semiconductor |
DIODE GEN PURP 100V 200MA DO35 |
в производстве | Standard | 100V | 200mA | 1V @ 10mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 5µA @ 75V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |
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ON Semiconductor |
DIODE GEN PURP 100V 200MA DO35 |
в производстве | Standard | 100V | 200mA | 1V @ 20mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 5µA @ 75V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |
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ON Semiconductor |
DIODE GEN PURP 100V 200MA DO35 |
в производстве | Standard | 100V | 200mA | 1V @ 10mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 5µA @ 75V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |
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ON Semiconductor |
DIODE GEN PURP 100V 200MA DO35 |
в производстве | Standard | 100V | 200mA | 1V @ 10mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 5µA @ 75V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 100V 200MA DO35 |
в производстве | Standard | 100V | 200mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 5µA @ 75V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 50V 200MA DO35 |
в производстве | Standard | 50V | 200mA | 1V @ 10mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 100nA @ 50V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |
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ON Semiconductor |
DIODE GEN PURP 250V 200MA SOT23 |
в производстве | Standard | 250V | 200mA (DC) | 1.25V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 50ns | 100nA @ 200V | 5pF @ 0V, 1MHz | SMD Поверхностный монтаж | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | -55°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 100V 200MA SOD80 |
в производстве | Standard | 100V | 200mA | 1V @ 10mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 5µA @ 75V | 4pF @ 0V, 1MHz | SMD Поверхностный монтаж | DO-213AC, MINI-MELF, SOD-80 | SOD-80 | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 200V 200MA SOT23 |
в производстве | Standard | 200V | 200mA (DC) | 1.25V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 50ns | 100nA @ 150V | 5pF @ 0V, 1MHz | SMD Поверхностный монтаж | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | -55°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 100V 200MA LL34 |
в производстве | Standard | 100V | 200mA | 1V @ 10mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 5µA @ 75V | 4pF @ 0V, 1MHz | SMD Поверхностный монтаж | DO-213AC, MINI-MELF, SOD-80 | SOD-80 | 175°C (Max) |
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ON Semiconductor |
DIODE GEN PURP 100V 200MA LL34 |
в производстве | Standard | 100V | 200mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 5µA @ 75V | 2pF @ 0V, 1MHz | SMD Поверхностный монтаж | DO-213AC, MINI-MELF, SOD-80 | SOD-80 | 175°C (Max) |
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ON Semiconductor |
DIODE GEN PURP 100V 200MA SOD323 |
в производстве | Standard | 100V | 200mA (DC) | 1V @ 10mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 5µA @ 75V | 4pF @ 0V, 1MHz | SMD Поверхностный монтаж | SC-76, SOD-323 | SOD-323 | -55°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 40V 100MA SC70-3 |
в производстве | Standard | 40V | 100mA (DC) | 1.2V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 3ns | 100nA @ 35V | 2pF @ 0V, 1MHz | SMD Поверхностный монтаж | SC-70, SOT-323 | SC-70-3 (SOT323) | 150°C (Max) |
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ON Semiconductor |
DIODE GEN PURP 30V 500MA DO35 |
в производстве | Standard | 30V | 500mA | 1V @ 100mA | Standard Recovery >500ns, > 200mA (Io) | - | 25nA @ 25V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 175°C (Max) |
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ON Semiconductor |
DIODE GEN PURP 75V 200MA SOD523F |
в производстве | Standard | 75V | 200mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 5µA @ 75V | 4pF @ 0V, 1MHz | SMD Поверхностный монтаж | SC-79, SOD-523F | SOD-523F | -55°C ~ 150°C |
