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ON Semiconductor |
DIODE SCHOTTKY 100V 3A SMC |
в производстве | Schottky | 100V | 3A | 850mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 100V | - | SMD Поверхностный монтаж | DO-214AB, SMC | SMC (DO-214AB) | -55°C ~ 150°C |
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ON Semiconductor |
DIODE SCHOTTKY 100V 1A SMA |
в производстве | Schottky | 100V | 1A | 760mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 40µA @ 100V | - | SMD Поверхностный монтаж | DO-214AC, SMA | SMA | -65°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 200V 3A SMC |
в производстве | Schottky | 200V | 3A | 840mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 1mA @ 200V | - | SMD Поверхностный монтаж | DO-214AB, SMC | SMC | -55°C ~ 150°C |
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ON Semiconductor |
DIODE SCHOTTKY 45V 8A AXIAL |
в производстве | Schottky | 45V | 8A | 550mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 45V | - | Through Hole | DO-201AA, DO-27, Axial | Axial | -65°C ~ 125°C |
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ON Semiconductor |
DIODE SCHOTTKY 45V 15A 5DFN |
в производстве | Schottky | 45V | 15A | 570mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 120µA @ 45V | - | SMD Поверхностный монтаж | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | -55°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 400V 3A DPAK |
в производстве | Standard | 400V | 3A | 1.15V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 400V | - | SMD Поверхностный монтаж | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -55°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 1KV 3A DO201AD |
в производстве | Standard | 1000V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1000V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 400V 3A DO201AD |
в производстве | Standard | 400V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 50V 3A DO201AD |
в производстве | Standard | 50V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 200V 2A AXIAL |
в производстве | Standard | 200V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 2µA @ 200V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 600V 3A DO201AD |
в производстве | Standard | 600V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 100V 3A AXIAL |
в производстве | Standard | 100V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | - | Through Hole | DO-201AA, DO-27, Axial | Axial | -65°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 200V 3A DO201AD |
в производстве | Standard | 200V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 200V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 100V 3A AXIAL |
в производстве | Standard | 100V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 10µA @ 100V | - | Through Hole | DO-201AD, Axial | Axial | -65°C ~ 125°C |
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ON Semiconductor |
DIODE GEN PURP 200V 3A DO201AD |
в производстве | Standard | 200V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 10µA @ 200V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 125°C |
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ON Semiconductor |
DIODE GEN PURP 400V 3A DO201AD |
в производстве | Standard | 400V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 10µA @ 400V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 125°C |
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ON Semiconductor |
DIODE GEN PURP 800V 4A SMC |
в производстве | Standard | 800V | 4A | 1.85V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 25µA @ 800V | - | SMD Поверхностный монтаж | DO-214AB, SMC | SMC | -65°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 30V 1A AXIAL |
в производстве | Schottky | 30V | 1A | 550mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 30V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 125°C |
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ON Semiconductor |
DIODE SCHOTTKY 30V 3A DO201AD |
в производстве | Schottky | 30V | 3A | 500mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 30V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 125°C |
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ON Semiconductor |
DIODE SCHOTTKY 40V 3A DO201AD |
в производстве | Schottky | 40V | 3A | 525mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 40V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 125°C |
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ON Semiconductor |
DIODE SCHOTTKY 20V 3A DO201AD |
в производстве | Schottky | 20V | 3A | 475mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 20V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 125°C |
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ON Semiconductor |
DIODE GEN PURP 400V 2A AXIAL |
в производстве | Standard | 400V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 65ns | 5µA @ 400V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 20V 1A AXIAL |
в производстве | Schottky | 20V | 1A | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 125°C |
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ON Semiconductor |
DIODE SCHOTTKY 120V 20A TO277-3 |
в производстве | Schottky | 120V | 20A | 790mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 35µA @ 120V | - | SMD Поверхностный монтаж | TO-277, 3-PowerDFN | TO-277-3 | -55°C ~ 150°C |
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ON Semiconductor |
DIODE SCHOTTKY 40V 1A AXIAL |
в производстве | Schottky | 40V | 1A | 600mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 40V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 125°C |
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ON Semiconductor |
DIODE GEN PURP 100V 1A AXIAL |
в производстве | Standard | 100V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 2µA @ 100V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 100V 1A AXIAL |
в производстве | Schottky | 100V | 1A | 790mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 100V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 100V 4A DO201AD |
в производстве | Standard | 100V | 4A | 890mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 100V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 200V 4A DO201AD |
в производстве | Standard | 200V | 4A | 890mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 200V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 50V 1A AXIAL |
в производстве | Schottky | 50V | 1A | 750mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 200V 1A AXIAL |
в производстве | Standard | 200V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 2µA @ 200V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 50V 4A DO201AD |
в производстве | Standard | 50V | 4A | 890mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 50V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 600V 6A TO252-3 |
в производстве | Standard | 600V | 6A | 2.1V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 100µA @ 600V | - | SMD Поверхностный монтаж | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252AA | -55°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 1KV 1A AXIAL |
в производстве | Standard | 1000V | 1A | 1.75V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 10µA @ 1000V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 1KV 2A AXIAL |
в производстве | Standard | 1000V | 2A | 2.2V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 10µA @ 1000V | - | Through Hole | DO-204AL, DO-41, Axial | Axial | -65°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 60V 3A DO201AD |
в производстве | Schottky | 60V | 3A | 740mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 600µA @ 60V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 400V 4A AXIAL |
в производстве | Standard | 400V | 4A | 1.28V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 400V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 40V 3A AXIAL |
в производстве | Schottky | 40V | 3A | 600mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 600µA @ 40V | - | Through Hole | DO-201AA, DO-27, Axial | Axial | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 600V 4A DO201AD |
в производстве | Standard | 600V | 4A | 1.28V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 100V 3A DO201AD |
в производстве | Schottky | 100V | 3A | 790mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 600µA @ 100V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 1KV 4A DO201AD |
в производстве | Standard | 1000V | 4A | 1.85V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 25µA @ 1000V | - | Through Hole | DO-201AA, DO-27, Axial | DO-201AD | -65°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 100V 8A D2PAK |
в производстве | Schottky | 100V | 8A | 710mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 4.5µA @ 100V | 600pF @ 4V, 1MHz | SMD Поверхностный монтаж | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -65°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 45V 10A D2PAK |
в производстве | Schottky | 45V | 10A | 840mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 45V | - | SMD Поверхностный монтаж | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -65°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 40V 3A DPAK |
в производстве | Schottky | 40V | 3A | 600mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 40V | - | SMD Поверхностный монтаж | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -65°C ~ 150°C |
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ON Semiconductor |
DIODE SCHOTTKY 60V 3A DPAK |
в производстве | Schottky | 60V | 3A | 600mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 60V | - | SMD Поверхностный монтаж | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -65°C ~ 150°C |
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ON Semiconductor |
DIODE SCHOTTKY 45V 7.5A TO220-2 |
в производстве | Schottky | 45V | 7.5A | 840mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 45V | - | Through Hole | TO-220-2 | TO-220-2 | -65°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 35V 7.5A TO220-2 |
в производстве | Schottky | 35V | 7.5A | 840mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 35V | - | Through Hole | TO-220-2 | TO-220-2 | -65°C ~ 175°C |
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ON Semiconductor |
DIODE SCHOTTKY 45V 8A AXIAL |
в производстве | Schottky | 45V | 8A | 550mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 45V | - | Through Hole | DO-201AA, DO-27, Axial | Axial | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 400V 8A TO220AC |
в производстве | Standard | 400V | 8A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 10µA @ 400V | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 175°C |
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ON Semiconductor |
DIODE GEN PURP 100V 15A TO220-2 |
в производстве | Standard | 100V | 15A | 1.05V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 100V | - | Through Hole | TO-220-2 | TO-220-2 | -65°C ~ 175°C |
