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STMicroelectronics |
DIODE GEN PURP 300V 8A TO220AC |
в производстве | Standard | 300V | 8A | 1.25V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 20µA @ 300V | - | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 600V 8A TO220AC |
в производстве | Standard | 600V | 8A | 3.4V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 18ns | 20µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 1.2KV 5A TO220FP |
в производстве | Standard | 1200V | 5A | 2.2V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 95ns | 5µA @ 1200V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FPAC | 175°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 400V 8A TO220AC |
в производстве | Standard | 400V | 8A | 1.5V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | - | Through Hole | TO-220-2 Insulated, TO-220AC | TO-220AC ins | -40°C ~ 175°C |
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STMicroelectronics |
DIODE SCHOTTKY 100V 5A DPAK |
в производстве | Schottky | 100V | 5A | 730mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3.5µA @ 100V | - | SMD Поверхностный монтаж | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 175°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 600V 30A TO247-2 |
в производстве | Standard | 600V | 30A | 2.4V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 5µA @ 600V | - | Through Hole | TO-247-2 | TO-247-2 | 175°C (Max) |
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STMicroelectronics |
DIODE SILICON 650V 10A D2PAK |
в производстве | Silicon Carbide Schottky | 650V | 10A | 1.75V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 650V | 480pF @ 0V, 1MHz | SMD Поверхностный монтаж | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK | -40°C ~ 175°C |
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STMicroelectronics |
DIODE GEN PURP 1KV 8A TO220AB |
в производстве | Standard | 1000V | 8A | 2V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 85ns | 5µA @ 1000V | - | Through Hole | TO-220-3 | TO-220Ins | 175°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 600V 15A TO220AC |
в производстве | Standard | 600V | 15A | 1.55V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 85ns | 15µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 600V 15A TO220FP |
в производстве | Standard | 600V | 15A | 1.55V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 85ns | 15µA @ 600V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FPAC | 175°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 1KV 12A TO220INS |
в производстве | Standard | 1000V | 12A | 2V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 10µA @ 1000V | - | Through Hole | TO-220-2 Insulated, TO-220AC | TO-220AC ins | 175°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 600V 8A TO220AC |
в производстве | Standard | 600V | 8A | 1.85V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 8µA @ 600V | - | Through Hole | TO-220-2 Insulated, TO-220AC | TO-220AC ins | 175°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 200V 15A TO220AC |
в производстве | Standard | 200V | 15A | 1.1V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 36ns | 10µA @ 200V | - | Through Hole | TO-220-2 Insulated, TO-220AC | TO-220AC ins | 175°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 200V 20A TO220AC |
в производстве | Standard | 200V | 20A | 1.1V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 10µA @ 200V | - | Through Hole | TO-220-2 Insulated, TO-220AC | TO-220AC ins | 175°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 600V 30A DO247 |
в производстве | Standard | 600V | 30A | 1.55V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 25µA @ 600V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | -40°C ~ 175°C |
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STMicroelectronics |
DIODE GEN PURP 600V 5A TO220AC |
в производстве | Standard | 600V | 5A | 3.6V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 6µA @ 600V | - | Through Hole | TO-220-2 Insulated, TO-220AC | TO-220AC ins | 175°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 400V 30A TO220AC |
в производстве | Standard | 400V | 30A | 1.45V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 15µA @ 400V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 175°C |
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STMicroelectronics |
DIODE GEN PURP 600V 30A DO247 |
в производстве | Standard | 600V | 30A | 1.85V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 70ns | 25µA @ 600V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | 175°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 600V 30A DO247 |
в производстве | Standard | 600V | 30A | 1.85V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 70ns | 25µA @ 600V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | 175°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 1.2KV 75A DO247 |
в производстве | Standard | 1200V | 75A | 3.2V @ 75A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 50µA @ 1200V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | -40°C ~ 175°C |
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STMicroelectronics |
DIODE GEN PURP 1KV 30A DO247 |
в производстве | Standard | 1000V | 30A | 2V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 15µA @ 1000V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | 175°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 1.2KV 15A DOP3I |
в производстве | Standard | 1200V | 15A | 2.1V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 105ns | 15µA @ 1200V | - | Through Hole | DOP3I-2 Insulated (Straight Leads) | DOP3I | 175°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 600V 60A DO247 |
в производстве | Standard | 600V | 60A | 1.85V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 85ns | 50µA @ 600V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | 175°C (Max) |
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STMicroelectronics |
DIODE SCHOTTKY 60V 3A DO15 |
в производстве | Schottky | 60V | 3A | 620mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 60µA @ 60V | - | Through Hole | DO-204AC, DO-15, Axial | DO-15 | 150°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 600V 3A SMB |
в производстве | Standard | 600V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 3µA @ 600V | - | SMD Поверхностный монтаж | DO-214AA, SMB | SMB | 175°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 200V 3A DO201AD |
в производстве | Standard | 200V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 3µA @ 200V | - | Through Hole | DO-201AD, Axial | DO-201AD | 175°C (Max) |
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STMicroelectronics |
DIODE SCHOTTKY 170V 1A TO220AB |
в производстве | Schottky | 120V | 20A | 890mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 210µA @ 120V | - | Through Hole | TO-220-3 | TO-220AB | 150°C (Max) |
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STMicroelectronics |
DIODE SCHOTTKY 45V 7.5A TO220FP |
в производстве | Schottky | 45V | 7.5A | 840mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 45V | - | Through Hole | TO-220-2 Full Pack | TO-220FPAC | 175°C (Max) |
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STMicroelectronics |
DIODE GP 600V 15A TO220FPAC |
в производстве | Standard | 600V | 15A | 1.9V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 2µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220FPAC | 175°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 600V 5A DPAK |
в производстве | Standard | 600V | 5A | 2.9V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 20µA @ 600V | - | SMD Поверхностный монтаж | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 175°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 600V 12A D2PAK |
в производстве | Standard | 600V | 12A | 2.9V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 45µA @ 600V | - | SMD Поверхностный монтаж | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 175°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 600V 15A TO220FP |
в производстве | Standard | 600V | 15A | 2.9V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 60µA @ 600V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FPAC | 175°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 600V 30A TO247 |
в производстве | Standard | 600V | 30A | 2V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 65ns | 10µA @ 600V | - | Through Hole | TO-247-3 | TO-247 | -40°C ~ 175°C |
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STMicroelectronics |
DIODE GEN PURP 300V 60A TO247-3 |
в производстве | Standard | 300V | 60A | 1.5V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 300V | - | Through Hole | TO-247-3 | TO-247-3 | 175°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 1KV 30A DO247-2 |
в производстве | Standard | 1000V | 30A | 2V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 15µA @ 1000V | - | Through Hole | DO-247-2 (Straight Leads) | - | -40°C ~ 175°C |
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STMicroelectronics |
DIODE GEN PURP 600V 15A D2PAK |
в производстве | Standard | 600V | 15A | 2.95V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 20µA @ 600V | - | SMD Поверхностный монтаж | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 175°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 600V 30A D2PAK |
в производстве | Standard | 600V | 30A | 2.95V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 40µA @ 600V | - | SMD Поверхностный монтаж | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 175°C (Max) |
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STMicroelectronics |
DIODE RECT 100V 20A TO220FP |
в производстве | FERD (Field Effect Rectifier Diode) | 100V | 20A | 705mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 140µA @ 100V | - | Through Hole | TO-220-3 Full Pack | TO-220FP | 175°C (Max) |
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STMicroelectronics |
DIODE RECT 100V 20A TO220AB |
в производстве | FERD (Field Effect Rectifier Diode) | 100V | 20A | 705mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 140µA @ 100V | - | Through Hole | TO-220-3 | TO-220AB | 175°C (Max) |
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STMicroelectronics |
DIODE RECT 100V 20A IPAK |
в производстве | FERD (Field Effect Rectifier Diode) | 100V | 20A | 705mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 140µA @ 100V | - | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 175°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 600V 30A D2PAK |
в производстве | Standard | 600V | 30A | 2.95V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 40µA @ 600V | - | SMD Поверхностный монтаж | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -40°C ~ 175°C |
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STMicroelectronics |
DIODE RECT 100V 30A TO220AB |
в производстве | FERD (Field Effect Rectifier Diode) | 100V | 30A | 745mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 130µA @ 100V | - | Through Hole | TO-220-3 | TO-220AB | 175°C (Max) |
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STMicroelectronics |
DIODE RECT 100V 30A IPAK |
в производстве | FERD (Field Effect Rectifier Diode) | 100V | 30A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | - | - | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IPAK (TO-251) | 175°C (Max) |
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STMicroelectronics |
DIODE SCHOTTKY 120V 30A TO220AB |
в производстве | Schottky | 120V | 30A | 950mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 275µA @ 120V | - | Through Hole | TO-220-3 | TO-220AB | 150°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 600V 15A TO220AC |
в производстве | Standard | 600V | 15A | 2.95V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 20µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 600V 15A DO247 |
в производстве | Standard | 600V | 15A | 2.95V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 20µA @ 600V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | 175°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 1.2KV 30A DO247 |
в производстве | Standard | 1200V | 30A | 1.3V @ 30A | Standard Recovery >500ns, > 200mA (Io) | - | 2µA @ 1200V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | 175°C (Max) |
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STMicroelectronics |
DIODE SCHOTTKY 650V 8A TO220AC |
в производстве | Silicon Carbide Schottky | 650V | 8A | 1.45V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 105µA @ 650V | 540pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 175°C |
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STMicroelectronics |
DIODE GEN PURP 400V 30A DO247 |
в производстве | Standard | 400V | 30A | 1.45V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 15µA @ 400V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | -40°C ~ 175°C |
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STMicroelectronics |
DIODE SCHOTTKY 650V 10A TO220AC |
в производстве | Silicon Carbide Schottky | 650V | 10A | 1.45V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 130µA @ 650V | 670pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 175°C |
