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Производители для Диоды - выпрямители - одиночные

AVX Corporation
Bourns
Central Semiconductor
Comchip Technology
Sensata Technologies – Crydom
Diodes Incorporated
GeneSiC Semiconductor
Global Power Technologies Group, Inc.
Infineon Technologies
IXYS Corporation
Littelfuse
MACOM Technology Solutions
Micro Commercial Components (MCC)
Microsemi
Nexperia
NXP Semiconductors
ON Semiconductor
Panasonic
Phoenix Contact
Power Integrations
Powerex, Inc.
Renesas Electronics America
ROHM Semiconductor
Sanken Electric Co., Ltd.
Semtech
SMC Diode Solutions
Esterline Connection Technologies
STMicroelectronics
Taiwan Semiconductor
Texas Instruments
Torex Semiconductor
Toshiba Semiconductor and Storage
TT Electronics/Optek Technology
Vishay
WeEn Semiconductors Co., Ltd
Wolfspeed
номер части Производитель / Марка Краткое описание Статус деталиТип диодаНапряжение - Реверс постоянного тока (Vr) (макс.)Текущий - средний отрегулированный (Io)Напряжение - Вперед (Vf) (Макс.) @ ЕслискоростьВремя обратного восстановления (trr)Текущий - обратный утечек @ VrЕмкость @ Vr, FТип монтажаУпаковка / чехолПакет устройств поставщикаРабочая температура - Соединение
STTH2L06U
 STMicroelectronics DIODE GEN PURP 600V 2A SMB в производствеStandard600V2A1.3V @ 2AFast Recovery =< 500ns, > 200mA (Io)85ns2µA @ 600V
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SMD Поверхностный монтажDO-214AA, SMBSMB175°C (Max)
STPS2L25UF
 STMicroelectronics DIODE SCHOTTKY 25V 2A SMBFLAT устарелыйSchottky25V2A450mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
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90µA @ 25V
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SMD Поверхностный монтажDO-221AA, SMB Flat LeadsSMBflat150°C (Max)
STTH3R02S
 STMicroelectronics DIODE GEN PURP 200V 3A SMC в производствеStandard200V3A1V @ 3AFast Recovery =< 500ns, > 200mA (Io)30ns3µA @ 200V
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SMD Поверхностный монтажDO-214AB, SMCSMC175°C (Max)
STTH2R06U
 STMicroelectronics DIODE GEN PURP 600V 2A SMB в производствеStandard600V2A1.7V @ 2AFast Recovery =< 500ns, > 200mA (Io)50ns2µA @ 600V
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SMD Поверхностный монтажDO-214AA, SMBSMB-40°C ~ 175°C
FERD2045SB-TR
 STMicroelectronics DIODE GEN PURP 45V 20A D2PAK в производствеStandard45V20A (DC)550mV @ 20AStandard Recovery >500ns, > 200mA (Io)
-
600µA @ 45V
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SMD Поверхностный монтажTO-252-3, DPak (2 Leads + Tab), SC-63DPAK-40°C ~ 150°C
STPS5L40RL
 STMicroelectronics DIODE SCHOTTKY 40V 5A DO201AD в производствеSchottky40V5A500mV @ 5AFast Recovery =< 500ns, > 200mA (Io)
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200µA @ 40V
-
Through HoleDO-201AD, AxialDO-201AD150°C (Max)
STTH3L06U
 STMicroelectronics DIODE GEN PURP 600V 3A SMB в производствеStandard600V3A1.3V @ 3AFast Recovery =< 500ns, > 200mA (Io)85ns3µA @ 600V
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SMD Поверхностный монтажDO-214AA, SMBSMB175°C (Max)
STTH3L06S
 STMicroelectronics DIODE GEN PURP 600V 3A SMC в производствеStandard600V3A1.3V @ 3AFast Recovery =< 500ns, > 200mA (Io)85ns3µA @ 600V
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SMD Поверхностный монтажDO-214AB, SMCSMC175°C (Max)
STTH310
 STMicroelectronics DIODE GEN PURP 1KV 3A DO201AD в производствеStandard1000V3A1.7V @ 3AFast Recovery =< 500ns, > 200mA (Io)75ns10µA @ 1000V
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Through HoleDO-201AD, AxialDO-201AD-40°C ~ 175°C
STPS1H100MF
 STMicroelectronics DIODE SCHOTTKY 100V 1A STMITEFLA в производствеSchottky100V1A770mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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4µA @ 100V
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SMD Поверхностный монтажDO-222AASTmite Flat175°C (Max)
STPS340SY
 STMicroelectronics DIODE SCHOTTKY 40V 3A SMC в производствеSchottky40V3A630mV @ 3AFast Recovery =< 500ns, > 200mA (Io)
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20µA @ 40V
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SMD Поверхностный монтажDO-214AB, SMCSMC-40°C ~ 150°C
STTH4R02BY-TR
 STMicroelectronics DIODE GEN PURP 200V 4A DPAK в производствеStandard200V4A1.05V @ 4AStandard Recovery >500ns, > 200mA (Io)30ns3µA @ 200V
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SMD Поверхностный монтажTO-252-3, DPak (2 Leads + Tab), SC-63DPAK-40°C ~ 175°C
STPS5L60S
 STMicroelectronics DIODE SCHOTTKY 60V 5A SMC в производствеSchottky60V5A520mV @ 5AFast Recovery =< 500ns, > 200mA (Io)
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220µA @ 60V
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SMD Поверхностный монтажDO-214AB, SMCSMC150°C (Max)
FERD20U50DJF-TR
 STMicroelectronics DIODE RECT 50V 20A POWERFLAT в производствеFERD (Field Effect Rectifier Diode)50V20A510mV @ 20AFast Recovery =< 500ns, > 200mA (Io)
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800µA @ 50V
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SMD Поверхностный монтаж8-PowerVDFNPowerFlat™ (5x6)150°C (Max)
FERD30H100SB-TR
 STMicroelectronics DIODE RECT 100V 30A DPAK в производствеFERD (Field Effect Rectifier Diode)100V30A
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Fast Recovery =< 500ns, > 200mA (Io)
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-
-
SMD Поверхностный монтажTO-252-3, DPak (2 Leads + Tab), SC-63DPAK175°C (Max)
STPS160UY
 STMicroelectronics DIODE SCHOTTKY 60V 1A SMB в производствеSchottky60V1A670mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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4µA @ 60V
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SMD Поверхностный монтажDO-214AA, SMBSMB-40°C ~ 150°C
FERD20M60SR
 STMicroelectronics DIODE RECT 60V 20A I2PAK в производствеFERD (Field Effect Rectifier Diode)60V20A560mV @ 20AFast Recovery =< 500ns, > 200mA (Io)
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230µA @ 60V
-
Through HoleTO-262-3 Full Pack, I²PakI2PAK175°C (Max)
STPS8L30BY-TR
 STMicroelectronics DIODE SCHOTTKY 30V 8A DPAK в производствеSchottky30V8A490mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 30V
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SMD Поверхностный монтажTO-252-3, DPak (2 Leads + Tab), SC-63DPAK-40°C ~ 150°C
STPS1045BY-TR
 STMicroelectronics DIODE SCHOTTKY 45V 10A DPAK в производствеSchottky45V10A630mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 45V
-
SMD Поверхностный монтажTO-252-3, DPak (2 Leads + Tab), SC-63DPAK-40°C ~ 175°C
STPS8H100D
 STMicroelectronics DIODE SCHOTTKY 100V 8A TO220AC в производствеSchottky100V8A710mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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4.5µA @ 100V
-
Through HoleTO-220-2TO-220AC175°C (Max)
STPS8H100G
 STMicroelectronics DIODE SCHOTTKY 100V 8A D2PAK устарелыйSchottky100V8A710mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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4.5µA @ 100V
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SMD Поверхностный монтажTO-263-3, D²Pak (2 Leads + Tab), TO-263ABD2PAK175°C (Max)
STPS8L30DEE-TR
 STMicroelectronics DIODE SCHOTTKY 30V 8A POWERFLAT в производствеSchottky30V8A500mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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1mA @ 30V
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SMD Поверхностный монтаж8-PowerTDFNPowerFlat™ (3.3x3.3)150°C (Max)
STPS1045DEE-TR
 STMicroelectronics DIODE SCHOTTKY 45V 10A POWERFLAT в производствеSchottky45V10A590mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
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200µA @ 45V
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SMD Поверхностный монтаж8-PowerTDFNPowerFlat™ (3.3x3.3)175°C (Max)
STTH5L06B-TR
 STMicroelectronics DIODE GEN PURP 600V 5A DPAK в производствеStandard600V5A1.3V @ 5AFast Recovery =< 500ns, > 200mA (Io)95ns5µA @ 600V
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SMD Поверхностный монтажTO-252-3, DPak (2 Leads + Tab), SC-63DPAK175°C (Max)
STTH8R06GY-TR
 STMicroelectronics DIODE GEN PURP 600V 8A D2PAK в производствеStandard600V8A3.2V @ 8AFast Recovery =< 500ns, > 200mA (Io)45ns30µA @ 600V
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SMD Поверхностный монтажTO-263-3, D²Pak (2 Leads + Tab), TO-263ABD²PAK-40°C ~ 175°C
STTH803G-TR
 STMicroelectronics DIODE GEN PURP 300V 8A D2PAK в производствеStandard300V8A1.25V @ 8AFast Recovery =< 500ns, > 200mA (Io)35ns20µA @ 300V
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SMD Поверхностный монтажTO-263-3, D²Pak (2 Leads + Tab), TO-263ABD2PAK175°C (Max)
STTH15RQ06GY-TR
 STMicroelectronics DIODE GEN PURP 600V 15A D2PAK в производствеStandard600V15A2.95V @ 15AFast Recovery =< 500ns, > 200mA (Io)50ns20µA @ 600V
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SMD Поверхностный монтажTO-263-3, D²Pak (2 Leads + Tab), TO-263ABD2PAK-40°C ~ 175°C
STPSC4H065B-TR
 STMicroelectronics DIODE SCHOTTKY 650V 4A DPAK в производствеSilicon Carbide Schottky650V4A1.75V @ 4ANo Recovery Time > 500mA (Io)0ns40µA @ 650V200pF @ 0V, 1MHzSMD Поверхностный монтажTO-252-3, DPak (2 Leads + Tab), SC-63DPAK-40°C ~ 175°C
STTH4R06DEE-TR
 STMicroelectronics DIODE GEN PURP 600V 4A POWERFLAT в производствеStandard600V4A1.7V @ 4AFast Recovery =< 500ns, > 200mA (Io)50ns3µA @ 600V
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SMD Поверхностный монтаж8-PowerVDFNPowerFlat™ (3.3x3.3)150°C (Max)
STPSC4H065D
 STMicroelectronics DIODE SCHOTTKY 650V 4A TO220AC в производствеSilicon Carbide Schottky650V4A1.75V @ 4ANo Recovery Time > 500mA (Io)0ns40µA @ 650V200pF @ 0V, 1MHzThrough HoleTO-220-2TO-220AC-40°C ~ 175°C
STPS30H100DJF-TR
 STMicroelectronics DIODE SCHOTTKY 100V 30A POWRFLAT в производствеSchottky100V30A840mV @ 30AFast Recovery =< 500ns, > 200mA (Io)
-
6µA @ 100V
-
SMD Поверхностный монтаж8-PowerVDFNPowerFlat™ (5x6)150°C (Max)
STPS20SM120STN
 STMicroelectronics DIODE SCHOTTKY 120V 20A TO220AB устарелыйSchottky120V20A890mV @ 20AFast Recovery =< 500ns, > 200mA (Io)
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210µA @ 120V
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Through HoleTO-220-3TO-220AB Narrow Leads150°C (Max)
STPS20SM120SR
 STMicroelectronics DIODE SCHOTTKY 120V 20A I2PAK устарелыйSchottky120V20A890mV @ 20AFast Recovery =< 500ns, > 200mA (Io)
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210µA @ 120V
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Through HoleTO-262-3 Long Leads, I²Pak, TO-262AAI2PAK150°C (Max)
STPS1545DY
 STMicroelectronics DIODE SCHOTTKY 45V 15A TO220AC в производствеSchottky45V15A570mV @ 15AFast Recovery =< 500ns, > 200mA (Io)
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200µA @ 45V
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Through HoleTO-220-2TO-220AC-40°C ~ 175°C
STTH812G-TR
 STMicroelectronics DIODE GEN PURP 1.2KV 8A D2PAK в производствеStandard1200V8A2.2V @ 8AFast Recovery =< 500ns, > 200mA (Io)100ns8µA @ 1200V
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SMD Поверхностный монтажTO-263-3, D²Pak (2 Leads + Tab), TO-263ABD2PAK175°C (Max)
STPS5H100H
 STMicroelectronics DIODE SCHOTTKY 100V 5A IPAK в производствеSchottky100V5A730mV @ 5AFast Recovery =< 500ns, > 200mA (Io)
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3.5µA @ 100V
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Through HoleTO-251-3 Short Leads, IPak, TO-251AAI-PAK175°C (Max)
STTH810GY-TR
 STMicroelectronics DIODE GEN PURP 1KV 8A D2PAK в производствеStandard1000V8A2V @ 8AFast Recovery =< 500ns, > 200mA (Io)85ns5µA @ 1000V
-
SMD Поверхностный монтажTO-263-3, D²Pak (2 Leads + Tab), TO-263ABD²PAK-40°C ~ 175°C
STTH5R06BY-TR
 STMicroelectronics DIODE GEN PURP 600V 5A DPAK в производствеStandard600V5A3.2V @ 5AFast Recovery =< 500ns, > 200mA (Io)35ns30µA @ 600V
-
SMD Поверхностный монтажTO-252-3, DPak (2 Leads + Tab), SC-63DPAK175°C (Max)
STTH806G-TR
 STMicroelectronics DIODE GEN PURP 600V 8A D2PAK в производствеStandard600V8A1.85V @ 8AFast Recovery =< 500ns, > 200mA (Io)55ns8µA @ 600V
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SMD Поверхностный монтажTO-263-3, D²Pak (2 Leads + Tab), TO-263ABD2PAK175°C (Max)
STPS10L25G-TR
 STMicroelectronics DIODE SCHOTTKY 25V 10A D2PAK в производствеSchottky25V10A460mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
-
800µA @ 25V
-
SMD Поверхностный монтажTO-263-3, D²Pak (2 Leads + Tab), TO-263ABD2PAK150°C (Max)
STTH810FP
 STMicroelectronics DIODE GEN PURP 1KV 8A TO220FP в производствеStandard1000V8A2V @ 8AFast Recovery =< 500ns, > 200mA (Io)85ns5µA @ 1000V
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Through HoleTO-220-2 Full Pack, Isolated TabTO-220FPAC175°C (Max)
STTH810G-TR
 STMicroelectronics DIODE GEN PURP 1KV 8A D2PAK в производствеStandard1000V8A2V @ 8AFast Recovery =< 500ns, > 200mA (Io)85ns5µA @ 1000V
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SMD Поверхностный монтажTO-263-3, D²Pak (2 Leads + Tab), TO-263ABD2PAK175°C (Max)
STTH15R06D
 STMicroelectronics DIODE GEN PURP 600V 15A TO220AC в производствеStandard600V15A2.9V @ 15AFast Recovery =< 500ns, > 200mA (Io)50ns60µA @ 600V
-
Through HoleTO-220-2TO-220AC175°C (Max)
STPS30L30DJF-TR
 STMicroelectronics DIODE SCHOTTKY 30V 30A POWERFLAT в производствеSchottky30V30A510mV @ 30AFast Recovery =< 500ns, > 200mA (Io)
-
750µA @ 30V
-
SMD Поверхностный монтаж8-PowerVDFNPowerFlat™ (5x6)150°C (Max)
STPSC2H12B-TR1
 STMicroelectronics DIODE SCHOTTKY 1.2KV 5A DPAK в производствеSilicon Carbide Schottky1200V5A1.5V @ 2ANo Recovery Time > 500mA (Io)0ns12µA @ 1200V190pF @ 0V, 1MHzSMD Поверхностный монтажTO-252-3, DPak (2 Leads + Tab), SC-63DPAK-40°C ~ 175°C
STPS30SM100SG-TR
 STMicroelectronics DIODE SCHOTTKY 100V 30A D2PAK в производствеSchottky100V30A870mV @ 30AFast Recovery =< 500ns, > 200mA (Io)
-
45µA @ 100V
-
SMD Поверхностный монтажTO-263-3, D²Pak (2 Leads + Tab), TO-263ABD²PAK150°C (Max)
STTH30ST06WY
 STMicroelectronics DIODE GEN PURP 600V 30A DO247 в производствеStandard600V30A3.6V @ 30AFast Recovery =< 500ns, > 200mA (Io)50ns50µA @ 600V
-
Through HoleDO-247-2 (Straight Leads)DO-247-40°C ~ 175°C
STPSC8H065B-TR
 STMicroelectronics DIODE SCHOTTKY 650V 8A DPAK в производствеSilicon Carbide Schottky650V8A1.75V @ 8ANo Recovery Time > 500mA (Io)0ns80µA @ 650V414pF @ 0V, 1MHzSMD Поверхностный монтажTO-252-3, DPak (2 Leads + Tab), SC-63DPAK-40°C ~ 175°C
STPSC5H12B-TR1
 STMicroelectronics DIODE SCHOTTKY 1.2KV 5A DPAK в производствеSilicon Carbide Schottky1200V5A1.5V @ 5ANo Recovery Time > 500mA (Io)0ns30µA @ 1200V450pF @ 0V, 1MHzSMD Поверхностный монтажTO-252-3, DPak (2 Leads + Tab), SC-63DPAK-40°C ~ 175°C
STTH1512GY-TR
 STMicroelectronics DIODE GEN PURP 1.2KV 15A D2PAK в производствеStandard1200V15A1.9V @ 15AFast Recovery =< 500ns, > 200mA (Io)105ns15µA @ 1200V
-
SMD Поверхностный монтажTO-263-3, D²Pak (2 Leads + Tab), TO-263ABD2PAK-40°C ~ 175°C
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