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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 8A D-PAK |
устарелый | Standard | 200V | 8A | 1.2V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 100µA @ 200V | - | SMD Поверхностный монтаж | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 8A D-PAK |
устарелый | Standard | 600V | 8A | 1.2V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 100µA @ 600V | - | SMD Поверхностный монтаж | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 8A D-PAK |
устарелый | Standard | 600V | 8A | 1.2V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 100µA @ 600V | - | SMD Поверхностный монтаж | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 8A D-PAK |
устарелый | Standard | 600V | 8A | 1.2V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 100µA @ 600V | - | SMD Поверхностный монтаж | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 8A D-PAK |
устарелый | Standard | 1200V | 8A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 270ns | 100µA @ 1200V | - | SMD Поверхностный монтаж | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 8A D-PAK |
устарелый | Standard | 1200V | 8A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 270ns | 100µA @ 1200V | - | SMD Поверхностный монтаж | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 8A D-PAK |
устарелый | Standard | 1200V | 8A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 270ns | 100µA @ 1200V | - | SMD Поверхностный монтаж | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 8A D-PAK |
устарелый | Standard | 800V | 8A | 1.1V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 50µA @ 800V | - | SMD Поверхностный монтаж | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 8A D-PAK |
устарелый | Standard | 800V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 800V | - | SMD Поверхностный монтаж | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 8A D-PAK |
устарелый | Standard | 800V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 800V | - | SMD Поверхностный монтаж | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 8A D-PAK |
устарелый | Standard | 1200V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 1200V | - | SMD Поверхностный монтаж | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 8A D-PAK |
устарелый | Standard | 1200V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 1200V | - | SMD Поверхностный монтаж | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.6KV 8A D-PAK |
устарелый | Standard | 1600V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 1600V | - | SMD Поверхностный монтаж | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.6KV 8A D-PAK |
устарелый | Standard | 1600V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 1600V | - | SMD Поверхностный монтаж | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.6KV 8A D-PAK |
устарелый | Standard | 1600V | 8A | 1.1V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 1600V | - | SMD Поверхностный монтаж | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 80V 8A TO263AB |
устарелый | Schottky | 80V | 8A | 720mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 280µA @ 80V | 500pF @ 5V, 1MHz | SMD Поверхностный монтаж | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 80V 8A TO263AB |
устарелый | Schottky | 80V | 8A | 720mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 280µA @ 80V | 500pF @ 5V, 1MHz | SMD Поверхностный монтаж | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 8A D2PAK |
устарелый | Schottky | 100V | 8A | 720mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 280µA @ 100V | 500pF @ 5V, 1MHz | SMD Поверхностный монтаж | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 8A D2PAK |
устарелый | Schottky | 100V | 8A | 720mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 280µA @ 100V | 500pF @ 5V, 1MHz | SMD Поверхностный монтаж | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 7A DO201AD |
устарелый | Schottky | 45V | 7A | 560mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 45V | 1995pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 7A DO201AD |
устарелый | Schottky | 45V | 7A | 440mV @ 7.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 45V | 1995pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 7A P600 |
устарелый | Schottky | 45V | 7A | 570mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 4mA @ 45V | 1430pF @ 4V, 1MHz | Through Hole | P600, Axial | P600 | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 6.5A P600 |
устарелый | Schottky | 45V | 6.5A | 580mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.2mA @ 45V | 2050pF @ 4V, 1MHz | Through Hole | P600, Axial | P600 | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 200V 3A DO204AC |
устарелый | Schottky | 200V | 3A | 1.4V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 200V | 170pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 10A 45V D2PAK |
Discontinued at - | Schottky | 45V | 10A | 840mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 35V | 600pF @ 5V, 1MHz | SMD Поверхностный монтаж | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 16A 35V D2PAK |
Discontinued at - | Schottky | 35V | 16A | 630mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 35V | 1400pF @ 5V, 1MHz | SMD Поверхностный монтаж | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 16A 35V D2PAK |
Discontinued at - | Schottky | 35V | 16A | 630mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 35V | 1400pF @ 5V, 1MHz | SMD Поверхностный монтаж | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 16A 45V D2PAK |
Discontinued at - | Schottky | 45V | 16A | 630mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 45V | 1400pF @ 5V, 1MHz | SMD Поверхностный монтаж | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 16A 45V D2PAK |
Discontinued at - | Schottky | 45V | 16A | 630mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 45V | 1400pF @ 5V, 1MHz | SMD Поверхностный монтаж | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 7.5A 45V D2PAK |
Discontinued at - | Schottky | 45V | 7.5A | 570mV @ 7.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 45V | - | SMD Поверхностный монтаж | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 7.5A 45V D2PAK |
Discontinued at - | Schottky | 45V | 7.5A | 570mV @ 7.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 45V | - | SMD Поверхностный монтаж | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 3A 20V DPAK |
устарелый | Schottky | 20V | 3A | 600mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 20V | 189pF @ 5V, 1MHz | SMD Поверхностный монтаж | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 3A 20V DPAK |
устарелый | Schottky | 20V | 3A | 600mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 20V | 189pF @ 5V, 1MHz | SMD Поверхностный монтаж | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 3A 20V DPAK |
устарелый | Schottky | 20V | 3A | 600mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 20V | 189pF @ 5V, 1MHz | SMD Поверхностный монтаж | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20V 1A SMB |
устарелый | Schottky | 20V | 1A | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 20V | 110pF @ 5V, 1MHz | SMD Поверхностный монтаж | DO-214AA, SMB | SMB | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20V 3A SMB |
устарелый | Schottky | 20V | 3A | 450mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | 360pF @ 5V, 1MHz | SMD Поверхностный монтаж | DO-214AA, SMB | SMB | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 15V 20A D2PAK |
Discontinued at - | Schottky | 15V | 20A | 520mV @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10mA @ 15V | 2000pF @ 5V, 1MHz | SMD Поверхностный монтаж | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 15V 20A D2PAK |
Discontinued at - | Schottky | 15V | 20A | 520mV @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10mA @ 15V | 2000pF @ 5V, 1MHz | SMD Поверхностный монтаж | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 10A TO220AC |
Discontinued at - | Standard | 200V | 10A | 1.2V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 100µA @ 200V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 10A TO263AB |
Discontinued at - | Standard | 200V | 10A | 1.2V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 100µA @ 200V | - | SMD Поверхностный монтаж | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 10A TO220AC |
Discontinued at - | Standard | 400V | 10A | 1.2V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 100µA @ 200V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 10A TO263AB |
Discontinued at - | Standard | 400V | 10A | 1.2V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 100µA @ 200V | - | SMD Поверхностный монтаж | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 10A TO263AB |
Discontinued at - | Standard | 1000V | 10A | 1.33V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 310ns | 100µA @ 1000V | - | SMD Поверхностный монтаж | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 10A TO263AB |
Discontinued at - | Standard | 1200V | 10A | 1.33V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 310ns | 100µA @ 1000V | - | SMD Поверхностный монтаж | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 10A TO263AB |
Discontinued at - | Standard | 800V | 10A | 1.1V @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 800V | - | SMD Поверхностный монтаж | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 10A TO263AB |
Discontinued at - | Standard | 1000V | 10A | 1.1V @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 1000V | - | SMD Поверхностный монтаж | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 35V 10A TO-220AC |
устарелый | Schottky | 35V | 10A | 570mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 40V | 900pF @ 5V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 10A TO-220AC |
устарелый | Schottky | 40V | 10A | 570mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 40V | 900pF @ 5V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 10A TO-220AC |
устарелый | Schottky | 45V | 10A | 570mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 45V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 10A DPAK |
устарелый | Schottky | 100V | 10A | 810mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 100V | - | SMD Поверхностный монтаж | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | -55°C ~ 175°C |