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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 80V 8A TO220AC |
устарелый | Schottky | 80V | 8A | 720mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | - | - | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 180°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 8A TO-220AC |
устарелый | Schottky | 100V | 8A | 720mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 280µA @ 100V | 500pF @ 5V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 8A D2PAK |
устарелый | Schottky | 100V | 8A | 720mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 280µA @ 100V | 500pF @ 5V, 1MHz | SMD Поверхностный монтаж | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 6A TO220AC |
устарелый | Standard | 1200V | 6A | 3V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 80ns | 5µA @ 1200V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 8A TO220AC |
устарелый | Standard | 1200V | 8A | 3.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 95ns | 10µA @ 1200V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 8A TO220AC |
устарелый | Standard | 600V | 8A | 1.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 5µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 15A TO220AC |
Discontinued at - | Standard | 600V | 15A | 1.7V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 10µA @ 600V | - | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 35V 10A TO220AC |
устарелый | Schottky | 35V | 10A | 570mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 35V | 600pF @ 5V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 10A TO220AC |
устарелый | Schottky | 45V | 10A | 840mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 45V | 600pF @ 5V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 16A 35V TO-220AC |
устарелый | Schottky | 35V | 16A | 630mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 35V | 1400pF @ 5V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 16A 45V TO-220AC |
устарелый | Schottky | 45V | 16A | 630mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 45V | 1400pF @ 5V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 3A 20V DPAK |
устарелый | Schottky | 20V | 3A | 600mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 20V | 189pF @ 5V, 1MHz | SMD Поверхностный монтаж | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 15A TO220AB |
устарелый | Standard | 200V | 15A | 1.05V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 22ns | 10µA @ 200V | - | Through Hole | TO-220-3 | TO-220AB | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 8A TO262AA |
Discontinued at - | Standard | 200V | 8A | 975mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 5µA @ 200V | - | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262AA | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 10A 80V TO-220AB |
устарелый | Schottky | 80V | 10A | 810mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 600µA @ 80V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 80V 20A TO220AB |
устарелый | Schottky | 80V | 20A | 920mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 700µA @ 80V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30A 80V TO-220AB |
устарелый | Schottky | 80V | 30A | 950mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 80V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 7.5A 60V TO-220AC |
устарелый | Schottky | 60V | 7.5A | 800mV @ 7.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 700µA @ 60V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A SMF |
устарелый | Standard | 100V | 1A | 930mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 16ns | 2µA @ 100V | - | SMD Поверхностный монтаж | DO-219AB | SMF (DO-219AB) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A SMF |
устарелый | Standard | 200V | 1A | 930mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 16ns | 2µA @ 200V | - | SMD Поверхностный монтаж | DO-219AB | SMF (DO-219AB) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A SMF |
устарелый | Standard | 100V | 1A | 930mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 16ns | 2µA @ 100V | - | SMD Поверхностный монтаж | DO-219AB | SMF (DO-219AB) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A SMF |
устарелый | Standard | 200V | 1A | 930mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 16ns | 2µA @ 200V | - | SMD Поверхностный монтаж | DO-219AB | SMF (DO-219AB) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 6A TO277A |
устарелый | Standard | 600V | 6A | 3V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 10µA @ 600V | 30pF @ 4V, 1MHz | SMD Поверхностный монтаж | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 6A TO277A |
устарелый | Standard | 600V | 6A | 3V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 10µA @ 600V | 30pF @ 4V, 1MHz | SMD Поверхностный монтаж | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 6A TO277A |
устарелый | Standard | 200V | 6A | 1.05V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 10µA @ 200V | 80pF @ 4V, 1MHz | SMD Поверхностный монтаж | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 6A TO277A |
устарелый | Standard | 200V | 6A | 1.05V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 10µA @ 200V | 80pF @ 4V, 1MHz | SMD Поверхностный монтаж | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 8A TO220AC |
устарелый | Standard | 50V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | 55pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 8A TO220AC |
устарелый | Standard | 100V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 100V | 55pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 8A TO220AC |
устарелый | Standard | 200V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 200V | 55pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 8A TO220AC |
устарелый | Standard | 400V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | 55pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 8A TO220AC |
устарелый | Standard | 600V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | 55pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 8A TO220AC |
устарелый | Standard | 800V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 800V | 55pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 8A TO220AC |
устарелый | Standard | 1000V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1000V | 55pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 2KV 250MA DO204AL |
устарелый | Standard | 2000V | 250mA | 3.5V @ 250mA | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 2000V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 2KV 250MA DO204AL |
устарелый | Standard | 2000V | 250mA | 3.5V @ 250mA | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 2000V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 4KV 250MA DO204AL |
устарелый | Standard | 4000V | 250mA | 3.5V @ 250mA | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 4000V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 4KV 250MA DO204AL |
устарелый | Standard | 4000V | 250mA | 3.5V @ 250mA | Standard Recovery >500ns, > 200mA (Io) | 2µs | 5µA @ 4000V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 7.5A TO263AB |
устарелый | Schottky | 60V | 7.5A | 730mV @ 7.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 60V | - | SMD Поверхностный монтаж | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 7.5A TO263AB |
устарелый | Schottky | 60V | 7.5A | 730mV @ 7.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 60V | - | SMD Поверхностный монтаж | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 7.5A TO263AB |
устарелый | Schottky | 60V | 7.5A | 730mV @ 7.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 60V | - | SMD Поверхностный монтаж | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 3A SOD64 |
устарелый | Standard | 600V | 3A | 1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 5µA @ 600V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 30MA SOD80 |
устарелый | Schottky | 60V | 30mA (DC) | 410mV @ 1mA | Small Signal =< 200mA (Io), Any Speed | 1ns | 200nA @ 50V | 2pF @ 0V, 1MHz | SMD Поверхностный монтаж | DO-213AC, MINI-MELF, SOD-80 | SOD-80 MiniMELF | 125°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 30MA SOD80 |
устарелый | Schottky | 60V | 30mA (DC) | 410mV @ 1mA | Small Signal =< 200mA (Io), Any Speed | 1ns | 200nA @ 50V | 2pF @ 0V, 1MHz | SMD Поверхностный монтаж | DO-213AC, MINI-MELF, SOD-80 | SOD-80 MiniMELF | 125°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 50V 30MA SOD80 |
устарелый | Schottky | 50V | 30mA (DC) | 400mV @ 1mA | Small Signal =< 200mA (Io), Any Speed | 1ns | 200nA @ 40V | 2.1pF @ 0V, 1MHz | SMD Поверхностный монтаж | DO-213AC, MINI-MELF, SOD-80 | SOD-80 MiniMELF | 125°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 50V 30MA SOD80 |
устарелый | Schottky | 50V | 30mA (DC) | 400mV @ 1mA | Small Signal =< 200mA (Io), Any Speed | 1ns | 200nA @ 40V | 2.2pF @ 0V, 1MHz | SMD Поверхностный монтаж | DO-213AC, MINI-MELF, SOD-80 | SOD-80 MiniMELF | 125°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 30MA SOD80 |
устарелый | Schottky | 40V | 30mA (DC) | 390mV @ 1mA | Small Signal =< 200mA (Io), Any Speed | 1ns | 200nA @ 30V | 2.2pF @ 0V, 1MHz | SMD Поверхностный монтаж | DO-213AC, MINI-MELF, SOD-80 | SOD-80 MiniMELF | 125°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 30MA SOD80 |
устарелый | Schottky | 40V | 30mA (DC) | 390mV @ 1mA | Small Signal =< 200mA (Io), Any Speed | 1ns | 200nA @ 30V | 2.2pF @ 0V, 1MHz | SMD Поверхностный монтаж | DO-213AC, MINI-MELF, SOD-80 | SOD-80 MiniMELF | 125°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 200MA SOD80 |
устарелый | Schottky | 40V | 200mA (DC) | 600mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | 10ns | 5µA @ 30V | 50pF @ 0V, 1MHz | SMD Поверхностный монтаж | DO-213AC, MINI-MELF, SOD-80 | SOD-80 MiniMELF | 125°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 200MA SOD80 |
устарелый | Schottky | 40V | 200mA (DC) | 600mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | 10ns | 5µA @ 30V | 50pF @ 0V, 1MHz | SMD Поверхностный монтаж | DO-213AC, MINI-MELF, SOD-80 | SOD-80 MiniMELF | 125°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 200MA SOD80 |
устарелый | Schottky | 30V | 200mA (DC) | 600mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | 10ns | 5µA @ 20V | 50pF @ 0V, 1MHz | SMD Поверхностный монтаж | DO-213AC, MINI-MELF, SOD-80 | SOD-80 MiniMELF | 125°C (Max) |