|
|
Vishay Semiconductor Diodes Division |
DIODE GPP 1.5A 200V 4SMD |
в производстве | Single Phase | Standard | 200V | 1.5A | 1.1V @ 1.5A | 5µA @ 200V | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 4-SMD, Gull Wing | DFS |
|
|
SMC Diode Solutions |
BRIDGE RECT 1PHASE 1KV 1.5A DB-M |
в производстве | Single Phase | Standard | 1kV | 1.5A | 1.1V @ 1.5A | 5µA @ 1000V | -55°C ~ 150°C (TJ) | Through Hole | 4-EDIP (0.321", 8.15mm) | DB-M |
|
|
Comchip Technology |
RECT BRIDGE GPP 50V 1A DF |
в производстве | Single Phase | Standard | 50V | 1A | 1.1V @ 1A | 10µA @ 50V | -55°C ~ 150°C (TJ) | Through Hole | 4-EDIP (0.321", 8.15mm) | 4-DF |
|
|
SMC Diode Solutions |
BRIDGE RECT 1PHASE 600V 1A DB-M |
в производстве | Single Phase | Standard | 600V | 1A | 1.1V @ 1A | 5µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-EDIP (0.321", 8.15mm) | DB-M |
|
|
SMC Diode Solutions |
BRIDGE RECT 1PHASE 600V 3A D3K |
в производстве | Single Phase | Standard | 600V | 3A | 1.1V @ 3A | 5µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-ESIP | D3K |
|
|
SMC Diode Solutions |
BRIDGE RECT 1PHASE 1KV 3A D3K |
в производстве | Single Phase | Standard | 1kV | 3A | 1.1V @ 3A | 5µA @ 1000V | -55°C ~ 150°C (TJ) | Through Hole | 4-ESIP | D3K |
|
|
Comchip Technology |
RECT BRIDGE GPP 600V 1A DF |
в производстве | Single Phase | Standard | 600V | 1A | 1.1V @ 1A | 10µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-EDIP (0.321", 8.15mm) | 4-DF |
|
|
Comchip Technology |
RECT BRIDGE GPP 400V 1A DF |
в производстве | Single Phase | Standard | 400V | 1A | 1.1V @ 1A | 10µA @ 400V | -55°C ~ 150°C (TJ) | Through Hole | 4-EDIP (0.321", 8.15mm) | 4-DF |
|
|
Vishay Semiconductor Diodes Division |
DIODE BRIDGE 0.9A 65V DIP |
в производстве | Single Phase | Standard | 65V | 900mA | 1V @ 900mA | 10µA @ 65V | -40°C ~ 125°C (TJ) | Through Hole | 4-EDIP (0.300", 7.62mm) | DFM |
|
|
Vishay Semiconductor Diodes Division |
DIODE BRIDGE 0.9A 600V DIP |
в производстве | Single Phase | Standard | 600V | 900mA | 1V @ 900mA | 10µA @ 600V | -40°C ~ 125°C (TJ) | Through Hole | 4-EDIP (0.300", 7.62mm) | DFM |
|
|
SMC Diode Solutions |
BRIDGE RECT 1PHASE 600V 2A D3K |
в производстве | Single Phase | Standard | 600V | 2A | 1.1V @ 2A | 5µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-ESIP | D3K |
|
|
SMC Diode Solutions |
BRIDGE RECT 1PHASE 1KV 2A D3K |
в производстве | Single Phase | Standard | 1kV | 2A | 1.1V @ 2A | 5µA @ 1000V | -55°C ~ 150°C (TJ) | Through Hole | 4-ESIP | D3K |
|
|
SMC Diode Solutions |
BRIDGE RECT 1PHASE 600V 4A KBP |
в производстве | Single Phase | Standard | 600V | 4A | 1.1V @ 4A | 5µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-ESIP | KBP |
|
|
SMC Diode Solutions |
BRIDGE RECT 1PHASE 600V 4A D3K |
в производстве | Single Phase | Standard | 600V | 4A | 1.1V @ 4A | 5µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-ESIP | D3K |
|
|
SMC Diode Solutions |
BRIDGE RECT 1PHASE 1KV 4A D3K |
в производстве | Single Phase | Standard | 1kV | 4A | 1.1V @ 4A | 5µA @ 1000V | -55°C ~ 150°C (TJ) | Through Hole | 4-ESIP | D3K |
|
|
Vishay Semiconductor Diodes Division |
DIODE GPP 1A 400V 4DIP |
в производстве | Single Phase | Standard | 400V | 1A | 1.1V @ 1A | 5µA @ 400V | -55°C ~ 150°C (TJ) | Through Hole | 4-EDIP (0.300", 7.62mm) | DFM |
|
|
Taiwan Semiconductor Corporation |
BRIDGE RECT 1PHASE 800V 3A D3K |
в производстве | Single Phase | Standard | 800V | 3A | 1V @ 2A | 10µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-ESIP | D3K |
|
|
Taiwan Semiconductor Corporation |
BRIDGE RECT 1PHASE 600V 2A GBL |
в производстве | Single Phase | Standard | 600V | 2A | 1V @ 2A | 5µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | GBL |
|
|
Taiwan Semiconductor Corporation |
BRIDGE RECT 1PHASE 800V 4A D3K |
в производстве | Single Phase | Standard | 800V | 4A | 1V @ 2A | 10µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-ESIP | D3K |
|
|
Micro Commercial Co |
BRIDGE RECT 1PHASE 1000V 3A GBP |
в производстве | Single Phase | Standard | 1kV | 3A | 1.1V @ 1A | 10µA @ 1000V | -55°C ~ 150°C | Through Hole | 4-SIP, GBP | GBP |
|
|
Micro Commercial Co |
BRIDGE RECT 1PHASE 800V 3A GBP |
в производстве | Single Phase | Standard | 800V | 3A | 1.1V @ 1A | 10µA @ 800V | -55°C ~ 150°C | Through Hole | 4-SIP, GBP | GBP |
|
|
Micro Commercial Co |
BRIDGE RECT 1PHASE 600V 3A GBP |
в производстве | Single Phase | Standard | 600V | 3A | 1.1V @ 1A | 10µA @ 600V | -55°C ~ 150°C | Through Hole | 4-SIP, GBP | GBP |
|
|
Taiwan Semiconductor Corporation |
BRIDGE RECT 1PHASE 800V 2A GBL |
в производстве | Single Phase | Standard | 800V | 2A | 1.1V @ 15A | 10µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | GBL |
|
|
Taiwan Semiconductor Corporation |
BRIDGE RECT 1PHASE 600V 2A GBL |
в производстве | Single Phase | Standard | 600V | 2A | 1.1V @ 15A | 10µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | GBL |
|
|
Vishay Semiconductor Diodes Division |
DIODE FAST .5A 200V TO-269AA |
в производстве | Three Phase | Standard | 200V | 500mA | 1.25V @ 400mA | 5µA @ 200V | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-269AA, 4-BESOP | TO-269AA (MBS) |
|
|
Micro Commercial Co |
4A800VBRIDGEGBU PACKAGE |
в производстве | Single Phase | Standard | 800V | 4A | 0.9V @ 4A | 10µA @ 800V | -55°C ~ 150°C | Through Hole | 4-SIP, GBU | GBU |
|
|
Micro Commercial Co |
4A600VBRIDGEGBU PACKAGE |
в производстве | Single Phase | Standard | 600V | 4A | 0.9V @ 4A | 10µA @ 600V | -55°C ~ 150°C | Through Hole | 4-SIP, GBU | GBU |
|
|
Micro Commercial Co |
BRIDGE RECT 1PHASE 800V 4A GBP |
в производстве | Single Phase | Standard | 800V | 4A | 1.05V @ 2A | 10µA @ 800V | -55°C ~ 150°C | Through Hole | 4-SIP, GBP | GBP |
|
|
Micro Commercial Co |
BRIDGE RECT 1PHASE 1000V 4A GBP |
в производстве | Single Phase | Standard | 1kV | 4A | 1.05V @ 2A | 10µA @ 1000V | -55°C ~ 150°C | Through Hole | 4-SIP, GBP | GBP |
|
|
Taiwan Semiconductor Corporation |
BRIDGE RECT 1PHASE 600V 6A GBU |
в производстве | Single Phase | Standard | 600V | 6A | 1V @ 2A | 5µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
|
|
Taiwan Semiconductor Corporation |
BRIDGE RECT 1PHASE 1KV 4A GBU |
в производстве | Single Phase | Standard | 1kV | 4A | 1V @ 1.5A | 5µA @ 1000V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
|
|
Taiwan Semiconductor Corporation |
BRIDGE RECT 1PHASE 600V 4A GBU |
в производстве | Single Phase | Standard | 600V | 4A | 1V @ 2A | 5µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
|
|
Taiwan Semiconductor Corporation |
BRIDGE RECT 1PHASE 1KV 8A GBU |
в производстве | Single Phase | Standard | 1kV | 8A | 1V @ 1.5A | 5µA @ 1000V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
|
|
Micro Commercial Co |
BRIDGE RECT 1PHASE 1000V 10A KBJ |
в производстве | Single Phase | Standard | 1kV | 10A | 1.1V @ 5A | 5µA @ 1000V | -55°C ~ 150°C | Through Hole | 4-SIP, KBJ | KBJ |
|
|
Micro Commercial Co |
BRIDGE RECT 1PHASE 1000V 10A JA |
в производстве | Single Phase | Standard | 1kV | 10A | 1.1V @ 5A | 10µA @ 1000V | -55°C ~ 150°C | Through Hole | 4-SIP, JA | JA |
|
|
Micro Commercial Co |
BRIDGE RECT 1PHASE 1000V 15A JA |
в производстве | Single Phase | Standard | 1kV | 15A | 1.05V @ 7.5A | 10µA @ 1000V | -55°C ~ 150°C | Through Hole | 4-SIP, JA | JA |
|
|
SMC Diode Solutions |
BRIDGE RECT 1PHASE 1KV 15A GBU |
в производстве | Single Phase | Standard | 1kV | 15A | 1.1V @ 15A | 5µA @ 1000V | -55°C ~ 150°C (TJ) | Through Hole | 4-ESIP | GBU |
|
|
Taiwan Semiconductor Corporation |
BRIDGE RECT 1PHASE 600V 4A GBL |
в производстве | Single Phase | Standard | 600V | 4A | 1V @ 2A | 5µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | GBL |
|
|
Taiwan Semiconductor Corporation |
BRIDGE RECT 1PHASE 800V 4A GBL |
в производстве | Single Phase | Standard | 800V | 4A | 1V @ 2A | 5µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | GBL |
|
|
Taiwan Semiconductor Corporation |
BRIDGE RECT 1PHASE 600V 6A TS-6P |
в производстве | Single Phase | Standard | 600V | 6A | 1.1V @ 15A | 10µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, TS-6P | TS-6P |
|
|
ON Semiconductor |
RECT BRIDGE GPP 4A 50V GBU |
в производстве | Single Phase | Standard | 50V | 4A | 1V @ 4A | 5µA @ 50V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
|
|
Taiwan Semiconductor Corporation |
BRIDGE RECT 1PHASE 1KV 10A GBU |
в производстве | Single Phase | Standard | 1kV | 10A | 1.1V @ 1.5A | 5µA @ 1000V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
|
|
ON Semiconductor |
RECT BRIDGE GPP 4A 1000V GBU |
в производстве | Single Phase | Standard | 1kV | 4A | 1V @ 4A | 5µA @ 1000V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
|
|
Micro Commercial Co |
8A600VBRIDGEGBJ PACKAGE |
в производстве | Single Phase | Standard | 600V | 8A | 1V @ 4A | 5µA @ 600V | -55°C ~ 150°C | Through Hole | 4-SIP, GBJ | GBJ |
|
|
Taiwan Semiconductor Corporation |
BRIDGE RECT 1P 600V 10A TS-6P |
в производстве | Single Phase | Standard | 600V | 10A | 1.1V @ 15A | 10µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, TS-6P | TS-6P |
|
|
Vishay Semiconductor Diodes Division |
RECTIFIER BRIDGE 600V 1.9A D-37 |
в производстве | Single Phase | Standard | 600V | 1.9A | 1.1V @ 1.9A | 10µA @ 600V | -40°C ~ 150°C (TJ) | Through Hole | 4-SIP, 2KBB | 2KBB |
|
|
SMC Diode Solutions |
BRIDGE RECT 1PHASE 1KV 35A GBJ |
в производстве | Single Phase | Standard | 1kV | 35A | - | 5µA @ 1000V | -55°C ~ 150°C (TJ) | Through Hole | 4-ESIP | GBJ |
|
|
Taiwan Semiconductor Corporation |
BRIDGE RECT 1P 800V 25A TS-6P |
в производстве | Single Phase | Standard | 800V | 25A | 1.1V @ 15A | 10µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, TS-6P | TS-6P |
|
|
Micro Commercial Co |
25A800VBRIDGEGBU PACKAGE |
в производстве | Single Phase | Standard | 800V | 25A | 1.1V @ 12.5A | 10µA @ 800V | -55°C ~ 150°C | Through Hole | 4-SIP, GBU | GBU |
|
|
Vishay Semiconductor Diodes Division |
DIODE 6A 200V GSIB-5S |
в производстве | Single Phase | Standard | 200V | 2.8A | 950mV @ 3A | 10µA @ 200V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GSIB-5S | GSIB-5S |
