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ON Semiconductor |
IC BRIDGE RECT 600V 25A 4-SIP |
в производстве | Single Phase | Standard | 600V | 25A | 1.1V @ 25A | 10µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, TS-6P | TS-6P |
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Micro Commercial Co |
50A 600V BRIDGE RECTIFIER GBJ |
в производстве | Single Phase | Standard | 600V | 50A | 1.1V @ 25A | 10µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBJ | GBJ |
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Vishay Semiconductor Diodes Division |
MOD BRIDGE 1PH 6A D-72 |
в производстве | Single Phase | Standard | 400V | 6A | - | 10µA @ 400V | -40°C ~ 150°C (TJ) | Through Hole | 4-Square, D-72 | D-72 |
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Vishay Semiconductor Diodes Division |
DIODE 4A 1000V KBU |
в производстве | Single Phase | Standard | 1kV | 4A | 1V @ 4A | 5µA @ 1000V | -50°C ~ 150°C (TJ) | Through Hole | 4-ESIP, KBU | KBU |
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Vishay Semiconductor Diodes Division |
RECTIFIER BRIDGE 4A 200V KBU |
в производстве | Single Phase | Standard | 200V | 4A | 1V @ 4A | 5µA @ 200V | -50°C ~ 150°C (TJ) | Through Hole | 4-ESIP, KBU | KBU |
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Vishay Semiconductor Diodes Division |
MOD BRIDGE 1PH 8A D-72 |
в производстве | Single Phase | Standard | 200V | 8A | 1V @ 3A | 10µA @ 200V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, D-72 | D-72 |
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Vishay Semiconductor Diodes Division |
RECT BRIDGE 600V 35A POWER BRIDGE |
в производстве | Single Phase | Standard | 600V | 35A | 1.1V @ 17.5A | 10µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-ESIP, PB | isoCINK+™ PB |
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Comchip Technology |
RECT BRIDGE GPP 1000V 35A GBPC |
в производстве | Single Phase | Standard | 1kV | 35A | 1.1V @ 17.5A | 10µA @ 1000V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
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Comchip Technology |
RECT BRIDGE GPP 600V 35A GBPC |
в производстве | Single Phase | Standard | 600V | 35A | - | 10µA @ 600V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
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Comchip Technology |
BRIDGE DIODE GPP 50A 600V KBPC |
в производстве | Single Phase | Standard | 600V | 50A | 1.1V @ 25A | 10µA @ 600V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, KBPC | KBPC |
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Comchip Technology |
BRIDGE DIODE GPP 50A 1000V KBPC |
в производстве | Single Phase | Standard | 1kV | 50A | 1.1V @ 25A | 5µA @ 1000V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, KBPC | KBPC |
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ON Semiconductor |
RECT BRIDGE GPP 25A 400V GBPC-W |
в производстве | Single Phase | Standard | 400V | 25A | 1.1V @ 12.5A | 5µA @ 400V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC-W |
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ON Semiconductor |
RECT BRIDGE GPP 25A 400V GBPC |
в производстве | Single Phase | Standard | 400V | 25A | 1.1V @ 12.5A | 5µA @ 400V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
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ON Semiconductor |
RECT BRIDGE GPP 12A 100V GBPC-W |
в производстве | Single Phase | Standard | 100V | 12A | 1.1V @ 6A | 5µA @ 100V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC-W |
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Comchip Technology |
RECT BRIDGE GPP 600V 50A GBPCW |
в производстве | Single Phase | Standard | 600V | 50A | 1.1V @ 25A | 10µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC-W |
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Comchip Technology |
RECT BRIDGE GPP 600V 50A GBPC |
в производстве | Single Phase | Standard | 600V | 50A | 1.1V @ 25A | 10µA @ 600V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
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ON Semiconductor |
RECT BRIDGE GPP 15A 200V GBPC |
в производстве | Single Phase | Standard | 200V | 15A | 1.1V @ 7.5A | 5µA @ 200V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
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Vishay Semiconductor Diodes Division |
MOD BRIDGE 1PH 8A D-72 |
в производстве | Single Phase | Standard | 800V | 8A | 1V @ 3A | 10µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, D-72 | D-72 |
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ON Semiconductor |
RECT BRIDGE GPP 25A 100V GBPC |
в производстве | Single Phase | Standard | 100V | 25A | 1.1V @ 7.5A | 5µA @ 100V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
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ON Semiconductor |
RECT BRIDGE GPP 25A 200V GBPC-W |
в производстве | Single Phase | Standard | 200V | 25A | 1.1V @ 12.5A | 5µA @ 200V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC-W |
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ON Semiconductor |
RECT BRIDGE GPP 25A 600V GBPC-W |
в производстве | Single Phase | Standard | 600V | 25A | 1.1V @ 12.5A | 5µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC-W |
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ON Semiconductor |
DIODE BRIDGE GPP 25A 200V GBPC |
в производстве | Single Phase | Standard | 200V | 25A | 1.1V @ 12.5A | 5µA @ 200V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
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ON Semiconductor |
RECT BRIDGE GPP 25A 600V GBPC |
в производстве | Single Phase | Standard | 600V | 25A | 1.1V @ 12.5A | 5µA @ 600V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
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Vishay Semiconductor Diodes Division |
DIODE BRIDGE 1000V 4.5A ENH PB |
в производстве | Single Phase | Standard | 1kV | 4.5A | 1.1V @ 22.5A | 10µA @ 1000V | -55°C ~ 150°C (TJ) | Through Hole | 4-ESIP, PB | isoCINK+™ PB |
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Vishay Semiconductor Diodes Division |
RECTIFIER BRIDGE 800V 45A PB |
в производстве | Single Phase | Standard | 800V | 45A | 1.1V @ 22.5A | 10µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-ESIP, PB | isoCINK+™ PB |
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Vishay Semiconductor Diodes Division |
MOD BRIDGE 1PH 8A D-72 |
в производстве | Single Phase | Standard | 1kV | 8A | 1V @ 3A | 10µA @ 1000V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, D-72 | D-72 |
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GeneSiC Semiconductor |
DIODE BRIDGE 1000V 35A GBPC-T/W |
в производстве | Single Phase | Standard | 1kV | 35A | 1.1V @ 17.5A | 5µA @ 1000V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC-W |
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ON Semiconductor |
RECT BRIDGE GPP 35A 800V GBPC |
в производстве | Single Phase | Standard | 800V | 35A | 1.1V @ 17.5A | 5µA @ 800V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
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ON Semiconductor |
RECT BRIDGE GPP 35A 200V GBPC |
в производстве | Single Phase | Standard | 200V | 35A | 1.1V @ 17.5A | 5µA @ 200V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
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ON Semiconductor |
RECT BRIDGE GPP 35A 400V GBPC |
в производстве | Single Phase | Standard | 400V | 35A | - | 5µA @ 400V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
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ON Semiconductor |
RECT BRIDGE GPP 35A 600V GBPC |
в производстве | Single Phase | Standard | 600V | 35A | 1.1V @ 17.5A | 5µA @ 600V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
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Vishay Semiconductor Diodes Division |
DIODE 6A 100V KBU |
в производстве | Single Phase | Standard | 100V | 6A | 1V @ 6A | 5µA @ 100V | -50°C ~ 150°C (TJ) | Through Hole | 4-ESIP, KBU | KBU |
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Vishay Semiconductor Diodes Division |
DIODE 6A 1000V KBU |
в производстве | Single Phase | Standard | 1kV | 6A | 1V @ 6A | 5µA @ 1000V | -50°C ~ 150°C (TJ) | Through Hole | 4-ESIP, KBU | KBU |
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ON Semiconductor |
RECT BRIDGE GPP 35A 400V GBPC-W |
в производстве | Single Phase | Standard | 400V | 35A | 1.1V @ 17.5A | 5µA @ 400V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC-W |
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ON Semiconductor |
RECT BRIDGE GPP 35A 600V GBPC-W |
в производстве | Single Phase | Standard | 600V | 35A | 1.1V @ 17.5A | 5µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC-W |
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Vishay Semiconductor Diodes Division |
BRIDGE RECTIFIER 600V 8.0A D-72 |
в производстве | Single Phase | Standard | 600V | 8A | 1V @ 3A | 10µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, D-72 | D-72 |
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Vishay Semiconductor Diodes Division |
RECTIFIER BRIDGE 25A 600V GBPC |
в производстве | Single Phase | Standard | 600V | 25A | 1.1V @ 12.5A | 5µA @ 600V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
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Vishay Semiconductor Diodes Division |
RECTIFIER BRIDGE 12A 100V GBPC |
в производстве | Single Phase | Standard | 100V | 12A | 1.1V @ 6A | 5µA @ 100V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
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Vishay Semiconductor Diodes Division |
RECTIFIER BRIDGE 25A 400V GBPC |
в производстве | Single Phase | Standard | 400V | 25A | 1.1V @ 12.5A | 5µA @ 400V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
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Micro Commercial Co |
RECT BRIDGE 50A 400V WIRE LEADS |
в производстве | Single Phase | Standard | 400V | 50A | 1.2V @ 25A | 10µA @ 400V | -50°C ~ 150°C (TJ) | Through Hole | 4-Square, MP-50W | MP-50WW |
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Vishay Semiconductor Diodes Division |
RECTIFIER BRIDGE 35A 400V GBPC |
в производстве | Single Phase | Standard | 400V | 35A | 1.1V @ 17.5A | 5µA @ 400V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
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GeneSiC Semiconductor |
DIODE BRIDGE 1000V 50A KBPC-T/W |
в производстве | Single Phase | Standard | 1kV | 50A | 1.1V @ 25A | 5µA @ 1000V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, KBPC-T | KBPC-T |
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Vishay Semiconductor Diodes Division |
RECT BRIDGE 1-PH 600V 25A GBPC-A |
в производстве | Single Phase | Standard | 600V | 25A | - | 2mA @ 600V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC-A | GBPC-A |
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Vishay Semiconductor Diodes Division |
RECT BRIDGE 1-PH 1200V 35A GBPCW |
в производстве | Single Phase | Standard | 1.2kV | 35A | - | 2mA @ 1200V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC-W |
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IXYS |
RECT BRIDGE FAST 3PHASE I4-PAC-5 |
в производстве | Three Phase | Standard | 45V | 45A | 650mV @ 15A | 5mA @ 45V | -55°C ~ 150°C (TJ) | Through Hole | i4-Pac™-5 | ISOPLUS i4-PAC™ |
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Vishay Semiconductor Diodes Division |
RECT BRIDGE 1-PH 600V 35A GBPC-A |
в производстве | Single Phase | Standard | 600V | 35A | - | 2mA @ 600V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC-A | GBPC-A |
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Vishay Semiconductor Diodes Division |
RECT BRIDGE 1-PH 200V 35A GBPC-A |
в производстве | Single Phase | Standard | 200V | 35A | - | 2mA @ 200V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC-A | GBPC-A |
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Texas Instruments |
IC SCHOTTKY DIODE BRIDGE 16-SOIC |
в производстве | Single Phase | Schottky | 50V | 3A | 1.3V @ 1A | 100µA @ 40V | 0°C ~ 70°C (TA) | SMD Поверхностный монтаж | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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Texas Instruments |
IC SCHOTTKY DIODE BRIDGE 8-DIP |
в производстве | Single Phase | Schottky | 50V | 3A | 1.3V @ 1A | 100µA @ 40V | 0°C ~ 70°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Vishay Semiconductor Diodes Division |
RECTIFIER BRIDGE 400V 25A D-34A |
в производстве | Single Phase | Standard | 400V | 25A | - | 10µA @ 400V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, D-34 | D-34 |
