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Vishay Semiconductor Diodes Division |
DIODE BRIDGE 2A 50V 1PH WOG |
в производстве | Single Phase | Standard | 50V | 2A | 1.1V @ 2A | 5µA @ 50V | -55°C ~ 150°C (TJ) | Through Hole | 4-Circular, WOG | WOG |
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Vishay Semiconductor Diodes Division |
RECTIFIER BRIDGE 1AMP 200V DFS |
в производстве | Single Phase | Standard | 200V | 1A | 1.1V @ 1A | 5µA @ 200V | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 4-SMD, Gull Wing | DFS |
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Micro Commercial Co |
IC BRIDGE RECT 4A 1000V D3K |
в производстве | Single Phase | Standard | 1kV | 4A | 1V @ 7.5A | 10µA @ 1000V | -55°C ~ 150°C (TJ) | Through Hole | 4-ESIP | D3K |
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Micro Commercial Co |
RECTIFIER BRIDGE 1A 1000V DB-1 |
в производстве | Single Phase | Standard | 1kV | 1A | 1.1V @ 1A | 10µA @ 1000V | -55°C ~ 150°C (TJ) | Through Hole | 4-EDIP (0.321", 8.15mm) | DB-1 |
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Micro Commercial Co |
RECT BRIDGE GPP 4A 1000V GBU |
в производстве | Single Phase | Standard | 1kV | 4A | 1V @ 2A | 5µA @ 1000V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
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Micro Commercial Co |
RECT BRIDGE GPP 6A 800V GBU |
в производстве | Single Phase | Standard | 800V | 6A | 1V @ 3A | 5µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
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Micro Commercial Co |
RECT BRIDGE GPP 6A 100V GBU |
в производстве | Single Phase | Standard | 100V | 6A | 1V @ 3A | 5µA @ 100V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
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Micro Commercial Co |
RECT BRIDGE GPP 4A 800V GBU |
в производстве | Single Phase | Standard | 800V | 4A | 1V @ 2A | 5µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
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Micro Commercial Co |
RECT BRIDGE GPP 6A 600V GBU |
в производстве | Single Phase | Standard | 600V | 6A | 1V @ 3A | 5µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
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Micro Commercial Co |
RECT BRIDGE GPP 6A 1000V GBU |
в производстве | Single Phase | Standard | 1kV | 6A | 1V @ 3A | 5µA @ 1000V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
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Micro Commercial Co |
RECT BRIDGE GPP 6A 400V GBU |
в производстве | Single Phase | Standard | 400V | 6A | 1V @ 3A | 5µA @ 400V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
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Micro Commercial Co |
RECT BRIDGE GPP 8A 1000V GBU |
в производстве | Single Phase | Standard | 1kV | 8A | 1V @ 4A | 5µA @ 1000V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
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Micro Commercial Co |
DIODE BRIDGE 6A 1000V KBJ |
в производстве | Single Phase | Standard | 1kV | 6A | 1V @ 3A | 5µA @ 1000V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBJ | KBJ |
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Micro Commercial Co |
RECT BRIDGE GPP 8A 800V GBU |
в производстве | Single Phase | Standard | 800V | 8A | 1V @ 4A | 5µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
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Micro Commercial Co |
RECT BRIDGE GPP 8A 600V GBU |
в производстве | Single Phase | Standard | 600V | 8A | 1V @ 4A | 5µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
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ON Semiconductor |
RECT BRIDGE GPP 4A 400V GBU |
в производстве | Single Phase | Standard | 400V | 4A | 1V @ 4A | 5µA @ 400V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
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ON Semiconductor |
RECT BRIDGE GPP 6A 100V GBU |
в производстве | Single Phase | Standard | 100V | 6A | 1V @ 6A | 5µA @ 100V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
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ON Semiconductor |
RECT BRIDGE GPP 6A 800V GBU |
в производстве | Single Phase | Standard | 800V | 6A | 1V @ 6A | 5µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
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ON Semiconductor |
RECT BRIDGE GPP 6A 600V GBU |
в производстве | Single Phase | Standard | 600V | 6A | 1V @ 6A | 5µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
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Comchip Technology |
RECT BRIDGE GPP 400V 10A GBU |
в производстве | Single Phase | Standard | 400V | 10A | 1V @ 5A | 10µA @ 400V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
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Micro Commercial Co |
RECT BRIDGE GPP 10A 600V GBJ |
в производстве | Single Phase | Standard | 600V | 10A | 1.05V @ 5A | 10µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBJ | GBJ |
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Vishay Semiconductor Diodes Division |
RECTIFIER BRIDGE 600V 1.5A D-38 |
в производстве | Single Phase | Standard | 600V | 1.2A | 1.1V @ 1.2A | - | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, D-38 | D-38 |
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Diodes Incorporated |
RECT BRIDGE GPP 100V 6A GBU |
в производстве | Single Phase | Standard | 100V | 6A | 1V @ 3A | 5µA @ 100V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
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Diodes Incorporated |
RECT BRIDGE GPP 100V 4A GBU |
в производстве | Single Phase | Standard | 100V | 4A | 1V @ 2A | 5µA @ 100V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
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Diodes Incorporated |
RECT BRIDGE GPP 4A 600V GBU |
в производстве | Single Phase | Standard | 600V | 4A | 1V @ 2A | 5µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
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ON Semiconductor |
RECT BRIDGE GPP 8A 200V GBU |
в производстве | Single Phase | Standard | 200V | 8A | 1V @ 8A | 5µA @ 200V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
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Diodes Incorporated |
RECT BRIDGE GPP 200V 8A GBU |
в производстве | Single Phase | Standard | 200V | 8A | 1V @ 4A | 5µA @ 200V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
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GeneSiC Semiconductor |
DIODE BRIDGE 200V 6A KBU |
в производстве | Single Phase | Standard | 200V | 6A | 1V @ 6A | 10µA @ 200V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBU | KBU |
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Micro Commercial Co |
RECTIFIER BRIDGE 6A 200V PB-6 |
в производстве | Single Phase | Standard | 200V | 6A | 1.1V @ 3A | 10µA @ 200V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, PB-6 | PB-6 |
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GeneSiC Semiconductor |
DIODE BRIDGE 400V 8A KBU |
в производстве | Single Phase | Standard | 400V | 8A | 1V @ 8A | 10µA @ 400V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBU | KBU |
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GeneSiC Semiconductor |
DIODE BRIDGE 600V 8A KBU |
в производстве | Single Phase | Standard | 600V | 8A | 1V @ 8A | 10µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBU | KBU |
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GeneSiC Semiconductor |
DIODE BRIDGE 1000V 8A KBU |
в производстве | Single Phase | Standard | 1kV | 8A | 1V @ 8A | 10µA @ 1000V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBU | KBU |
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ON Semiconductor |
RECT BRIDGE GPP 8A 1000V GBU |
в производстве | Single Phase | Standard | 1kV | 8A | 1V @ 8A | 5µA @ 1000V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
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Micro Commercial Co |
RECTIFIER BRIDGE 6A 600V PB-6 |
в производстве | Single Phase | Standard | 600V | 6A | 1.1V @ 3A | 10µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, PB-6 | PB-6 |
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Comchip Technology |
RECT BRIDGE GPP 400V 10A MP8 |
в производстве | Single Phase | Standard | 400V | 10A | 1.1V @ 5A | 10µA @ 400V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, MP-8 | MP8 |
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Vishay Semiconductor Diodes Division |
DIODE GPP 1PH 4A 400V GPP GBU |
в производстве | Single Phase | Standard | 400V | 3A | 1V @ 4A | 5µA @ 400V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
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Diodes Incorporated |
RECT BRIDGE GPP 1000V 10A GBJ |
в производстве | Single Phase | Standard | 1kV | 10A | 1.05V @ 5A | 10µA @ 1000V | -65°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBJ | GBJ |
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Comchip Technology |
RECT BRIDGE GPP 1000V 10A MP8 |
в производстве | Single Phase | Standard | 1kV | 10A | 1.1V @ 5A | 10µA @ 1000V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, MP-8 | MP8 |
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Comchip Technology |
RECT BRIDGE CELL 1000V 10A KBU |
в производстве | Single Phase | Standard | 1kV | 10A | 1V @ 5A | 10µA @ 1000V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBU | KBU |
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Vishay Semiconductor Diodes Division |
DIODE GPP 8A 200V GPP INLINE GBU |
в производстве | Single Phase | Standard | 200V | 3.9A | 1V @ 8A | 5µA @ 200V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
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GeneSiC Semiconductor |
DIODE BRIDGE 200V 6A BR-6 |
в производстве | Single Phase | Standard | 200V | 6A | 1V @ 3A | 10µA @ 200V | -65°C ~ 125°C (TJ) | Through Hole | 4-Square, BR-6 | BR-6 |
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Diodes Incorporated |
RECT BRIDGE GPP 10A 600V GBU |
в производстве | Single Phase | Standard | 600V | 10A | 1V @ 5A | 5µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
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Micro Commercial Co |
RECT BRIDGE GPP 25A 800V GBJ |
в производстве | Single Phase | Standard | 800V | 25A | 1.05V @ 12.5A | 10µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBJ | GBJ |
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Micro Commercial Co |
RECT BRIDGE GPP 25A 1000V GBJ |
в производстве | Single Phase | Standard | 1kV | 25A | 1.05V @ 12.5A | 10µA @ 1000V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBJ | GBJ |
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Diodes Incorporated |
RECT BRIDGE GPP 1000V 8A GBU |
в производстве | Single Phase | Standard | 1kV | 8A | 1V @ 4A | 5µA @ 1000V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
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Micro Commercial Co |
BRIDGE RECTIFIER 35A 800V GBJ |
в производстве | Single Phase | Standard | 800V | 35A | 1.05V @ 17.5A | 10µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBJ | GBJ |
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Vishay Semiconductor Diodes Division |
DIODE 15A 600V GSIB-5S |
в производстве | Single Phase | Standard | 600V | 3.5A | 950mV @ 7.5A | 10µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GSIB-5S | GSIB-5S |
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ON Semiconductor |
IC BRIDGE RECT 600V 20A 4-SIP |
в производстве | Single Phase | Standard | 600V | 20A | 1.1V @ 20A | 10µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, TS-6P | TS-6P |
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Diodes Incorporated |
RECT BRIDGE GPP 1000V 15A GBJ |
в производстве | Single Phase | Standard | 1kV | 15A | 1.05V @ 7.5A | 10µA @ 1000V | -65°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBJ | GBJ |
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Diodes Incorporated |
RECT BRIDGE GPP 600V 20A GBJ |
в производстве | Single Phase | Standard | 600V | 20A | 1.05V @ 10A | 10µA @ 400V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBJ | GBJ |
