номер части Производитель / Марка Краткое описание Статус деталиТип диодаТехнологииНапряжение - Реверс пика (макс.)Текущий - средний отрегулированный (Io)Напряжение - Вперед (Vf) (Макс.) @ ЕслиТекущий - обратный утечек @ VrРабочая ТемператураТип монтажаУпаковка / чехолПакет устройств поставщика
Vishay Semiconductor Diodes Division RECTIFIER BRIDGE 600V 25A D-34A в производствеSingle PhaseStandard600V25A
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10µA @ 600V-55°C ~ 150°C (TJ)QC Terminal4-Square, D-34D-34
Vishay Semiconductor Diodes Division RECTIFIER BRIDGE 100V 25A D-34A в производствеSingle PhaseStandard100V25A
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10µA @ 100V-40°C ~ 150°C (TJ)QC Terminal4-Square, D-34D-34
Vishay Semiconductor Diodes Division RECTIFIER BRIDGE 1200V 35A D-34A в производствеSingle PhaseStandard1.2kV35A
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10µA @ 1200V-55°C ~ 150°C (TJ)QC Terminal4-Square, D-34D-34
IXYS RECT BRIDGE 3PH 25A 1200V FO-B в производствеThree PhaseStandard1.2kV25A2.2V @ 150A300µA @ 1200V-40°C ~ 150°C (TJ)QC Terminal5-Square, FO-BPWS-E1
Vishay Semiconductor Diodes Division RECTIFIER BRIDGE 1600V 35A D-34A в производствеSingle PhaseStandard1.6kV35A
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10µA @ 1600V-55°C ~ 150°C (TJ)QC Terminal4-Square, D-34D-34
Vishay Semiconductor Diodes Division RECT BRIDGE 3-PHA 100V 35A D-63 в производствеThree PhaseStandard100V35A
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10µA @ 100V-55°C ~ 150°C (TJ)QC Terminal5-Square, D-63D-63
Vishay Semiconductor Diodes Division RECT BRIDGE 3-PHA 800V 35A D-63 в производствеThree PhaseStandard800V35A
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10µA @ 800V-55°C ~ 150°C (TJ)QC Terminal5-Square, D-63D-63
Microsemi Corporation POWER MODULE FULL BRIDGE SOT-227 в производствеSingle PhaseStandard1.6kV40A1.3V @ 40A20µA @ 1600V-55°C ~ 150°C (TJ)Chassis MountSOT-227-4, miniBLOCSOT-227
Micro Commercial Co BRIDGE RECTIFIER 1A 800V LMBS-1 в производствеSingle PhaseStandard800V1A950mV @ 400mA5µA @ 800V-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-SMD, Gull WingLMBS-1
Rohm Semiconductor DIODE SWITCH 80V 25MA SC-74A в производствеSingle PhaseStandard80V25mA900mV @ 5mA100nA @ 70V150°C (TJ)SMD Поверхностный монтажSC-74A, SOT-753SMT5
Rohm Semiconductor DIODE SWITCH 80V 25MA SMD5 TR в производствеSingle PhaseStandard80V25mA900mV @ 5mA100nA @ 70V150°C (TJ)SMD Поверхностный монтажSC-74A, SOT-753SMD5
Micro Commercial Co DIODE BRIDGE 1.5A 1000V SDB-1 в производствеSingle PhaseStandard1kV1.5A1.1V @ 1.5A10µA @ 1000V-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-SMD, Gull WingSDB-1
Central Semiconductor Corp IC RECT BRIDGE 100V 0.5A HD DIP в производствеSingle PhaseStandard100V500mA1V @ 400mA5µA @ 100V-65°C ~ 150°C (TJ)SMD Поверхностный монтаж4-SMD, Gull Wing4-HD DIP
Micro Commercial Co DIODE BRIDGE GPP 2A 400V SDB-1 в производствеSingle PhaseStandard400V2A1.2V @ 2A10µA @ 400V-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-SMD, Gull WingSDB-1
Vishay Semiconductor Diodes Division DIODE GPP 1A 600V 4SMD в производствеSingle PhaseStandard600V1A1.1V @ 1A5µA @ 600V-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-SMD, Gull WingDFS
Diodes Incorporated RECTIFIER BRIDGE 800V 1.5A DF-S в производствеSingle PhaseStandard800V1.5A1.1V @ 1.5A10µA @ 800V-65°C ~ 150°C (TJ)SMD Поверхностный монтаж4-SMD, Gull WingDF-S
Comchip Technology RECT BRIDGE GP 1000V 2A ABSZ4 в производствеSingle PhaseStandard1kV2A950mV @ 2A5µA @ 1000V-55°C ~ 175°C (TJ)SMD Поверхностный монтаж4-SMD, No LeadABS(Z4)
Vishay Semiconductor Diodes Division DIODE GPP 1A 800V 4SMD в производствеSingle PhaseStandard800V1A1.1V @ 1A5µA @ 800V-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-SMD, Gull WingDFS
Diodes Incorporated RECT BRIDGE GP 400V 0.5A MINIDIP в производствеSingle PhaseStandard400V500mA1.15V @ 400mA5µA @ 400V-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-SMD4-MiniDIP
Central Semiconductor Corp RECT BRIDGE 2A 60V 4LPDIP в производствеSingle PhaseSchottky60V2A700mV @ 2A500µA @ 60V-55°C ~ 125°C (TJ)SMD Поверхностный монтаж4-SMD, Gull Wing4-LPDIP
Comchip Technology RECT BRIDGE GPP 50V 1A DFS в производствеSingle PhaseStandard50V1A1.1V @ 1A10µA @ 50V-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-SMD, Gull WingDFS
Comchip Technology RECT BRIDGE GPP 400V 1A DFS в производствеSingle PhaseStandard400V1A1.1V @ 1A10µA @ 400V-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-SMD, Gull WingDFS
Comchip Technology RECT BRIDGE GPP 600V 1A DFS в производствеSingle PhaseStandard600V1A1.1V @ 1A10µA @ 600V-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-SMD, Gull WingDFS
Comchip Technology RECT BRIDGE GPP 1000V 1A DF в производствеSingle PhaseStandard1kV1A1.1V @ 1A10µA @ 1000V-55°C ~ 150°C (TJ)Through Hole4-EDIP (0.321", 8.15mm)4-DF
Diodes Incorporated RECT BRIDGE GPP 800V 1A DF-M в производствеSingle PhaseStandard800V1A1.1V @ 1A10µA @ 800V-65°C ~ 150°C (TJ)Through Hole4-EDIP (0.300", 7.62mm)DFM
Diodes Incorporated RECT BRIDGE GPP 100V 1.5A KBP в производствеSingle PhaseStandard100V1.5A1.1V @ 1.5A5µA @ 100V-65°C ~ 150°C (TJ)Through Hole4-SIP, KBPKBP
Vishay Semiconductor Diodes Division RECT BRIDGE .5A 400V TO-269AA в производствеSingle PhaseStandard400V500mA1V @ 400mA5µA @ 400V-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-269AA, 4-BESOPTO-269AA (MBS)
Vishay Semiconductor Diodes Division RECTIFIER BRIDGE 0.5A TO269AA в производствеSingle PhaseStandard200V500mA1V @ 400mA5µA @ 200V-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-269AA, 4-BESOPTO-269AA (MBS)
Micro Commercial Co IC BRIDGE RECT 3A 1000V D3K в производствеSingle PhaseStandard1kV3A1.05V @ 1.5A10µA @ 1000V-55°C ~ 150°C (TJ)Through Hole4-ESIPD3K
Micro Commercial Co RECTIFIER BRIDGE 1A 200V DB-1 в производствеSingle PhaseStandard200V1A1.1V @ 1A10µA @ 200V-55°C ~ 150°C (TJ)Through Hole4-EDIP (0.321", 8.15mm)DB-1
Vishay Semiconductor Diodes Division DIODE GPP 1A 400V 4DIP в производствеSingle PhaseStandard400V1A1.1V @ 1A5µA @ 400V-55°C ~ 150°C (TJ)Through Hole4-EDIP (0.300", 7.62mm)DFM
Vishay Semiconductor Diodes Division DIODE GPP 1A 800V 4DIP в производствеSingle PhaseStandard800V1A1.1V @ 1A5µA @ 800V-55°C ~ 150°C (TJ)Through Hole4-EDIP (0.300", 7.62mm)DFM
Vishay Semiconductor Diodes Division DIODE GPP 1A 200V 4DIP в производствеSingle PhaseStandard200V1A1.1V @ 1A5µA @ 200V-55°C ~ 150°C (TJ)Through Hole4-EDIP (0.300", 7.62mm)DFM
Diodes Incorporated RECT BRIDGE GPP 1000V 1.5A KBP в производствеSingle PhaseStandard1kV1.5A1.1V @ 1.5A5µA @ 1000V-65°C ~ 150°C (TJ)Through Hole4-SIP, KBPKBP
Vishay Semiconductor Diodes Division DIODE GPP 1A 50V 4SMD в производствеSingle PhaseStandard50V1A1.1V @ 1A5µA @ 50V-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-SMD, Gull WingDFS
Micro Commercial Co RECTIFIER BRIDGE 1A 800V DB-1 в производствеSingle PhaseStandard800V1A1.1V @ 1A10µA @ 800V-55°C ~ 150°C (TJ)Through Hole4-EDIP (0.321", 8.15mm)DB-1
Micro Commercial Co RECT BRIDGE GPP 4A 100V GBU в производствеSingle PhaseStandard100V4A1V @ 2A5µA @ 100V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBUGBU
Micro Commercial Co RECT BRIDGE GPP 4A 400V GBU в производствеSingle PhaseStandard400V4A1V @ 2A5µA @ 400V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBUGBU
Vishay Semiconductor Diodes Division DIODE GPP 1A 200V 50NS 4DIP в производствеSingle PhaseStandard200V1A1.05V @ 1A5µA @ 200V-55°C ~ 150°C (TJ)Through Hole4-EDIP (0.300", 7.62mm)DFM
Micro Commercial Co RECT BRIDGE GPP 8A 200V GBU в производствеSingle PhaseStandard200V8A1V @ 4A5µA @ 200V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBUGBU
ON Semiconductor RECT BRIDGE GPP 6A 400V GBU в производствеSingle PhaseStandard400V6A1V @ 6A5µA @ 400V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBUGBU
ON Semiconductor RECT BRIDGE GPP 6A 50V GBU в производствеSingle PhaseStandard50V6A1V @ 6A5µA @ 50V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBUGBU
Micro Commercial Co IC BRIDGE RECT GPP 4A 200V RS-4L в производствеSingle PhaseStandard200V4A1.1V @ 4A5µA @ 200V-55°C ~ 150°C (TJ)Through Hole4-SIP, RS-4LRS-4L
Micro Commercial Co BRIDGE RECT 1PHASE 1000V GBJL в производствеSingle PhaseStandard1kV10A1.05V @ 5A10µA @ 1000V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBJLGBJL
Micro Commercial Co RECT BRIDGE GPP 15A 1000V GBJ в производствеSingle PhaseStandard1kV15A1.05V @ 7.5A10µA @ 1000V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBJGBJ
Micro Commercial Co RECT BRIDGE GPP 15A 800V GBJ в производствеSingle PhaseStandard800V15A1.05V @ 7.5A10µA @ 800V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBJGBJ
Micro Commercial Co IC BRIDGE RECT GPP 4A 50V RS-4L в производствеSingle PhaseStandard50V4A1.1V @ 4A5µA @ 50V-55°C ~ 150°C (TJ)Through Hole4-SIP, RS-4LRS-4L
GeneSiC Semiconductor DIODE BRIDGE 1000V 6A KBU в производствеSingle PhaseStandard1kV6A1V @ 6A10µA @ 1000V-55°C ~ 150°C (TJ)Through Hole4-SIP, KBUKBU
Micro Commercial Co RECTIFIER BRIDGE 6A 100V PB-6 в производствеSingle PhaseStandard100V6A1.1V @ 3A10µA @ 100V-55°C ~ 150°C (TJ)Through Hole4-Square, PB-6PB-6
Micro Commercial Co RECTIFIER BRIDGE 6A 400V PB-6 в производствеSingle PhaseStandard400V6A1.1V @ 3A10µA @ 400V-55°C ~ 150°C (TJ)Through Hole4-Square, PB-6PB-6
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