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GeneSiC Semiconductor |
DIODE BRIDGE 50V 8A KBU |
в производстве | Single Phase | Standard | 50V | 8A | 1V @ 8A | 10µA @ 50V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBU | KBU |
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Comchip Technology |
RECT BRIDGE GPP 1000V 15A GBU |
в производстве | Single Phase | Standard | 1kV | 15A | 1V @ 7.5A | 10µA @ 1000V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
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Vishay Semiconductor Diodes Division |
DIODE GPP 1PH 4A 600V GPP GBU |
в производстве | Single Phase | Standard | 600V | 4A | 1V @ 4A | 5µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
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Vishay Semiconductor Diodes Division |
DIODE GPP 8A 200V GPP INLINE GBU |
в производстве | Single Phase | Standard | 200V | 3.9A | 1V @ 8A | 5µA @ 200V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
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ON Semiconductor |
IC BRIDGE RECT 400V 25A TS6P-4 |
в производстве | Single Phase | Standard | 400V | 25A | 1.1V @ 25A | 10µA @ 400V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, TS-6P | TS-6P |
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Central Semiconductor Corp |
RECT BRIDGE 1A 600V 4DIP |
в производстве | Single Phase | Standard | 600V | 1A | 1.1V @ 1A | 10µA @ 600V | -65°C ~ 150°C (TJ) | Through Hole | 4-EDIP (0.300", 7.62mm) | 4-DIP |
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Vishay Semiconductor Diodes Division |
MOD BRIDGE 1PH 6A D-72 |
в производстве | Single Phase | Standard | 1kV | 6A | 1.2V @ 3A | 10mA @ 1000V | -40°C ~ 150°C (TJ) | Through Hole | 4-Square, D-72 | D-72 |
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Comchip Technology |
RECT BRIDGE GPP 1000V 35A GBPCW |
в производстве | Single Phase | Standard | 1kV | 35A | 1.1V @ 17.5A | 10µA @ 1000V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC-W |
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ON Semiconductor |
RECT BRIDGE GPP 12A 200V GBPC |
в производстве | Single Phase | Standard | 200V | 12A | 1.1V @ 6A | 5µA @ 200V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
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Comchip Technology |
BRIDGE DIODE GPP 50A 1000V KBPC- |
в производстве | Single Phase | Standard | 1kV | 50A | 1.1V @ 25A | 10µA @ 1000V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, KBPC-W | KBPC-W |
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ON Semiconductor |
RECT BRIDGE GPP 12A 400V GBPC |
в производстве | Single Phase | Standard | 400V | 12A | 1.1V @ 6A | 5µA @ 400V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
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ON Semiconductor |
RECT BRIDGE GPP 12A 1000V GBPC |
в производстве | Single Phase | Standard | 1kV | 12A | 1.1V @ 6A | 5µA @ 1000V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
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Comchip Technology |
RECT BRIDGE GPP 800V 50A GBPC |
в производстве | Single Phase | Standard | 800V | 50A | 1.1V @ 25A | 10µA @ 800V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
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Comchip Technology |
RECT BRIDGE GPP 800V 50A GBPCW |
в производстве | Single Phase | Standard | 800V | 50A | 1.1V @ 25A | 10µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC-W |
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ON Semiconductor |
RECT BRIDGE GPP 15A 600V GBPC-W |
в производстве | Single Phase | Standard | 600V | 15A | 1.1V @ 7.5A | 5µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC-W |
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ON Semiconductor |
RECT BRIDGE GPP 15A 400V GBPC-W |
в производстве | Single Phase | Standard | 400V | 15A | 1.1V @ 7.5A | 5µA @ 400V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC-W |
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ON Semiconductor |
RECT BRIDGE GPP 15A 100V GBPC-W |
в производстве | Single Phase | Standard | 100V | 15A | 1.1V @ 7.5A | 5µA @ 100V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC-W |
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ON Semiconductor |
RECT BRIDGE GPP 25A 800V GBPC |
в производстве | Single Phase | Standard | 800V | 25A | - | 5µA @ 800V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
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GeneSiC Semiconductor |
DIODE BRIDGE 400V 25A GBPC-T/W |
в производстве | Single Phase | Standard | 400V | 25A | 1.1V @ 12.5A | 5µA @ 400V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
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GeneSiC Semiconductor |
DIODE BRIDGE 600V 25A GBPC-T/W |
в производстве | Single Phase | Standard | 600V | 25A | 1.1V @ 12.5A | 5µA @ 600V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
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GeneSiC Semiconductor |
DIODE BRIDGE 800V 35A GBPC-T/W |
в производстве | Single Phase | Standard | 800V | 35A | 1.1V @ 17.5A | 5µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC-W |
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Vishay Semiconductor Diodes Division |
RECTIFIER BRIDGE 8A 200V KBU |
в производстве | Single Phase | Standard | 200V | 8A | 1V @ 8A | 10µA @ 200V | -50°C ~ 150°C (TJ) | Through Hole | 4-ESIP, KBU | KBU |
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Vishay Semiconductor Diodes Division |
DIODE 6A 600V KBU |
в производстве | Single Phase | Standard | 600V | 6A | 1V @ 6A | 5µA @ 600V | -50°C ~ 150°C (TJ) | Through Hole | 4-ESIP, KBU | KBU |
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GeneSiC Semiconductor |
DIODE BRIDGE 200V 35A GBPC-T/W |
в производстве | Single Phase | Standard | 200V | 35A | 1.1V @ 12.5A | 5µA @ 200V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC-T | GBPC-T |
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GeneSiC Semiconductor |
DIODE BRIDGE 400V 35A GBPC-T/W |
в производстве | Single Phase | Standard | 400V | 35A | 1.1V @ 12.5A | 5µA @ 400V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC-T | GBPC-T |
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Vishay Semiconductor Diodes Division |
DIODE 1PH 15A 200V GBPC |
в производстве | Single Phase | Standard | 200V | 15A | 1.1V @ 7.5A | 5µA @ 200V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
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Vishay Semiconductor Diodes Division |
DIODE 1PH 25A 1000V GBPC-W |
в производстве | Single Phase | Standard | 1kV | 25A | 1.1V @ 12.5A | 5µA @ 1000V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC-W |
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Vishay Semiconductor Diodes Division |
DIODE 1PH 15A 50V GBPC |
в производстве | Single Phase | Standard | 50V | 15A | 1.1V @ 7.5A | 5µA @ 50V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
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Vishay Semiconductor Diodes Division |
DIODE 1PH 25A 800V GBPC-W |
в производстве | Single Phase | Standard | 800V | 25A | 1.1V @ 12.5A | 5µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC-W |
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Vishay Semiconductor Diodes Division |
DIODE 1PH 15A 600V GBPC-W |
в производстве | Single Phase | Standard | 600V | 15A | 1.1V @ 7.5A | 5µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC-W |
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Vishay Semiconductor Diodes Division |
DIODE 1PH 15A 400V GBPC-W |
в производстве | Single Phase | Standard | 400V | 15A | 1.1V @ 7.5A | 5µA @ 400V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC-W |
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Vishay Semiconductor Diodes Division |
DIODE 1PH 15A 800V GBPC-W |
в производстве | Single Phase | Standard | 800V | 15A | 1.1V @ 7.5A | 5µA @ 800V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC-W |
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Vishay Semiconductor Diodes Division |
DIODE 1PH 15A 400V GBPC |
в производстве | Single Phase | Standard | 400V | 15A | 1.1V @ 7.5A | 5µA @ 400V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
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Vishay Semiconductor Diodes Division |
DIODE 1PH 15A 1000V GBPC |
в производстве | Single Phase | Standard | 1kV | 15A | 1.1V @ 7.5A | 5µA @ 1000V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
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Vishay Semiconductor Diodes Division |
RECTIFIER BRIDGE 25A 50V GBPC |
в производстве | Single Phase | Standard | 50V | 25A | 1.1V @ 12.5A | 5µA @ 50V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
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Micro Commercial Co |
BRIDGE RECT 50A 600V GBPC |
в производстве | Single Phase | Standard | 600V | 50A | 1.1V @ 25A | 5µA @ 600V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
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Micro Commercial Co |
RECT BRIDGE 50A 1000V WIRE LEADS |
в производстве | Single Phase | Standard | 1kV | 50A | 1.2V @ 25A | 10µA @ 1000V | -50°C ~ 150°C (TJ) | Through Hole | 4-Square, MP-50W | MP-50WW |
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Vishay Semiconductor Diodes Division |
RECTIFIER BRIDGE 35A 1000V GBPCW |
в производстве | Single Phase | Standard | 1kV | 35A | 1.1V @ 17.5A | 5µA @ 1000V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-W | GBPC-W |
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Vishay Semiconductor Diodes Division |
RECTIFIER BRIDGE 35A 100V GBPC |
в производстве | Single Phase | Standard | 100V | 35A | 1.1V @ 17.5A | 5µA @ 100V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
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Vishay Semiconductor Diodes Division |
RECT BRIDGE 1-PH 1200V 35A GBPCA |
в производстве | Single Phase | Standard | 1.2kV | 35A | - | 2mA @ 1200V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC-A | GBPC-A |
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Vishay Semiconductor Diodes Division |
RECT BRIDGE 1-PH 1000V 35A GBPCA |
в производстве | Single Phase | Standard | 1kV | 35A | - | 2mA @ 1000V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC-A | GBPC-A |
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Vishay Semiconductor Diodes Division |
RECTIFIER BRIDGE 400V 35A D-34A |
в производстве | Single Phase | Standard | 400V | 35A | - | 10µA @ 400V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, D-34 | D-34 |
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Vishay Semiconductor Diodes Division |
RECT BRIDGE 3-PHA 400V 35A D-63 |
в производстве | Three Phase | Standard | 400V | 35A | - | 10µA @ 400V | -55°C ~ 150°C (TJ) | QC Terminal | 5-Square, D-63 | D-63 |
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Micro Commercial Co |
BRIDGE RECT 2A 1000V TBS |
в производстве | Single Phase | Standard | 1kV | 2A | 1.1V @ 2A | 5µA @ 1000V | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 4-SMD, Flat Leads | 4-TBS |
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Central Semiconductor Corp |
IC RECT BRIDGE 600V 0.5A HD DIP |
в производстве | Single Phase | Standard | 600V | 500mA | 1V @ 400mA | 5µA @ 600V | -65°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 4-SMD, Gull Wing | 4-HD DIP |
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Vishay Semiconductor Diodes Division |
DIODE GPP 1PH 4A 200V GBU |
в производстве | Single Phase | Standard | 200V | 2.3A | 1V @ 2A | 5µA @ 200V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | GBU |
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Micro Commercial Co |
IC RECT BRIDGE GPP 35A 400V GBJ |
в производстве | Single Phase | Standard | 400V | 35A | 1.05V @ 17.5A | 10µA @ 400V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBJ | GBJ |
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ON Semiconductor |
RECT BRIDGE GPP 12A 600V GBPC |
в производстве | Single Phase | Standard | 600V | 12A | 1.1V @ 6A | 5µA @ 600V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
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Vishay Semiconductor Diodes Division |
RECT BRIDGE 600V 40A POWER BRIDGE |
в производстве | Single Phase | Standard | 600V | 40A | 1.1V @ 20A | 10µA @ 600V | -55°C ~ 150°C (TJ) | Through Hole | 4-ESIP, PB | isoCINK+™ PB |
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GeneSiC Semiconductor |
DIODE BRIDGE 800V 25A GBPC-T/W |
в производстве | Single Phase | Standard | 800V | 25A | 1.1V @ 12.5A | 5µA @ 800V | -55°C ~ 150°C (TJ) | QC Terminal | 4-Square, GBPC | GBPC |
