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Infineon Technologies |
DIODE GEN PURP 650V 80A TO247-3 |
в производстве | Standard | 650V | 80A | 2.3V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 40µA @ 650V | - | Through Hole | TO-247-3 | TO-247-3 | -40°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 650V 15A TO220-2 |
в производстве | Standard | 650V | 15A | 1.7V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 114ns | 40µA @ 650V | - | Through Hole | TO-220-2 | TO-220-2 | -40°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 650V 8A TO220-2 |
в производстве | Standard | 650V | 8A | 2.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 40µA @ 650V | - | Through Hole | TO-220-2 | TO-220-2 | -40°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 650V 15A TO220-2 |
в производстве | Standard | 650V | 15A | 2.2V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 47ns | 40µA @ 650V | - | Through Hole | TO-220-2 | TO-220-2 | -40°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 650V 30A TO247-3 |
в производстве | Standard | 650V | 30A | 2.3V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 47ns | 40µA @ 650V | - | Through Hole | TO-247-3 | PG-TO247-3 | -40°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 600V 120A TO247-3 |
в производстве | Standard | 600V | 120A (DC) | 2V @ 75A | Fast Recovery =< 500ns, > 200mA (Io) | 121ns | 40µA @ 600V | - | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 650V 8A TO220-2 |
в производстве | Standard | 650V | 8A | 1.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 80ns | 40µA @ 650V | - | Through Hole | TO-220-2 | TO-220-2 | -40°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 3A TO220-2-1 |
в производстве | Silicon Carbide Schottky | 650V | 3A (DC) | 1.7V @ 3A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 650V | 100pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 650V 80A TO247-3 |
в производстве | Standard | 650V | 80A | 1.7V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 129ns | 40µA @ 650V | - | Through Hole | TO-247-3 | TO-247-3 | -40°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 10A TO247-3 |
в производстве | Silicon Carbide Schottky | 650V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 180µA @ 650V | 300pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 16A TO247-3 |
в производстве | Silicon Carbide Schottky | 650V | 16A (DC) | 1.7V @ 16A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 470pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE MODULE 1800V 600A |
в производстве | - | - | - | - | - | - | - | - | Chassis Mount | Module | Module | - |
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Infineon Technologies |
DIODE SCHOTTKY 40V 120MA SOT23-3 |
в производстве | Schottky | 40V | 120mA (DC) | 1V @ 40mA | Small Signal =< 200mA (Io), Any Speed | 100ps | 1µA @ 30V | 5pF @ 0V, 1MHz | SMD Поверхностный монтаж | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | -55°C ~ 150°C |
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Infineon Technologies |
DIODE SCHOTTKY 70V 70MA SOT23-3 |
в производстве | Schottky | 70V | 70mA (DC) | 1V @ 15mA | Small Signal =< 200mA (Io), Any Speed | 100ps | 100nA @ 50V | 2pF @ 0V, 1MHz | SMD Поверхностный монтаж | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | -55°C ~ 125°C |
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Infineon Technologies |
DIODE SCHOTTKY 70V 70MA SOD323-2 |
в производстве | Schottky | 70V | 70mA (DC) | 1V @ 15mA | Small Signal =< 200mA (Io), Any Speed | 100ps | 100nA @ 50V | 2pF @ 0V, 1MHz | SMD Поверхностный монтаж | SC-76, SOD-323 | PG-SOD323-2 | 150°C (Max) |
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Infineon Technologies |
DIODE GEN PURP 80V 250MA SOT23-3 |
устарелый | Standard | 80V | 250mA (DC) | 1.25V @ 150mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 1µA @ 75V | 2pF @ 0V, 1MHz | SMD Поверхностный монтаж | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 150°C (Max) |
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Infineon Technologies |
DIODE SCHOTTKY 40V 120MA SOT23-3 |
в производстве | Schottky | 40V | 120mA | 750mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 2µA @ 30V | 6pF @ 1V, 1MHz | SMD Поверхностный монтаж | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 150°C (Max) |
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Infineon Technologies |
DIODE SCHOTTKY 30V 1A TSLP-2 |
в производстве | Schottky | 30V | 1A | 650mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 30V | 15pF @ 5V, 1MHz | SMD Поверхностный монтаж | SOD-882 | PG-TSLP-2 | -55°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP 600V 8A TO220AC |
в производстве | Standard | 600V | 8A | 1.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 5µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 12A TO220-2 |
в производстве | Silicon Carbide Schottky | 650V | 12A (DC) | 1.35V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 14µA @ 420V | 205pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 16A TO220-2 |
в производстве | Silicon Carbide Schottky | 650V | 16A (DC) | 1.35V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 20µA @ 420V | 302pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 650V 150A TO247-3 |
в производстве | Standard | 650V | 150A (DC) | 1.7V @ 75A | Fast Recovery =< 500ns, > 200mA (Io) | 108ns | 40µA @ 650V | - | Through Hole | TO-247-3 | PG-TO247-3 | -40°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 27A TO220-2 |
в производстве | Silicon Carbide Schottky | 650V | 27A (DC) | 1.35V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 420V | 594pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 34A TO220-2 |
в производстве | Silicon Carbide Schottky | 650V | 34A (DC) | 1.35V @ 16A | No Recovery Time > 500mA (Io) | 0ns | 53µA @ 420V | 783pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTKY 650V 16A TO220-2-1 |
в производстве | Silicon Carbide Schottky | 650V | 16A (DC) | 1.7V @ 16A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 470pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTKY 650V 20A TO220-2-1 |
в производстве | Silicon Carbide Schottky | 650V | 20A (DC) | 1.7V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 210µA @ 650V | 590pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 50V 250MA SOT23-3 |
устарелый | Standard | 50V | 250mA (DC) | 1V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 100nA @ 50V | 2pF @ 0V, 1MHz | SMD Поверхностный монтаж | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | -65°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP 650V 40A TO220-2 |
в производстве | Standard | 650V | 40A | 2.3V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 40µA @ 650V | - | Through Hole | TO-220-2 | TO-220-2 | -40°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 600V 71A TO220-2 |
в производстве | Standard | 600V | 71A (DC) | 2V @ 45A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 50µA @ 600V | - | Through Hole | TO-220-2 | PG-TO220-2-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP 650V 8A TO220-2 |
в производстве | Standard | 650V | 8A | 2.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 40µA @ 650V | - | Through Hole | TO-220-2 | TO-220-2 | -40°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 1200V 5A TO252-2 |
в производстве | Silicon Carbide Schottky | 1200V | 5A (DC) | 1.8V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 33µA @ 1200V | 301pF @ 1V, 1MHz | SMD Поверхностный монтаж | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 20A TO220-2 |
в производстве | Silicon Carbide Schottky | 650V | 20A (DC) | 1.35V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 27µA @ 420V | 401pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 9A TO220-2-1 |
в производстве | Silicon Carbide Schottky | 650V | 9A (DC) | 1.7V @ 9A | No Recovery Time > 500mA (Io) | 0ns | 160µA @ 650V | 270pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 24A TO220-2 |
в производстве | Silicon Carbide Schottky | 650V | 24A (DC) | 1.35V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 33µA @ 420V | 495pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTKY 650V 10A TO220-2-1 |
в производстве | Silicon Carbide Schottky | 650V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 180µA @ 650V | 300pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTKY 650V 12A TO220-2-1 |
в производстве | Silicon Carbide Schottky | 650V | 12A (DC) | 1.7V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 190µA @ 650V | 360pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 20A TO247-3 |
в производстве | Silicon Carbide Schottky | 650V | 20A (DC) | 1.7V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 210µA @ 650V | 590pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE SCHOTTKY 650V 40A TO247-3 |
в производстве | Silicon Carbide Schottky | 650V | 40A (DC) | 1.7V @ 40A | No Recovery Time > 500mA (Io) | 0ns | 220µA @ 650V | 1140pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C |
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Infineon Technologies |
DIODE GEN PURP D12026K-1 |
в производстве | Standard | 4500V | 1560A | 4.3V @ 2500A | Standard Recovery >500ns, > 200mA (Io) | - | 150mA @ 4500V | - | Chassis Mount | DO-200AE | - | 140°C (Max) |
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Infineon Technologies |
HIGH POWER THYR / DIO |
в производстве | Standard | 4500V | 2900A | - | Standard Recovery >500ns, > 200mA (Io) | - | 150mA @ 4500V | - | Chassis Mount | DO-200AE | - | 140°C (Max) |
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Infineon Technologies |
DIODE RECT 4500V D17226K-1 |
в производстве | Standard | 4500V | 4450A | 2V @ 2500A | Standard Recovery >500ns, > 200mA (Io) | - | 25mA @ 4500V | - | Chassis Mount | DO-200AE | - | 140°C (Max) |
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Infineon Technologies |
DIODE GEN PURP 80V 250MA SOT323 |
устарелый | Standard | 80V | 250mA (DC) | 1.25V @ 150mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 1µA @ 75V | 2pF @ 0V, 1MHz | SMD Поверхностный монтаж | SC-70, SOT-323 | PG-SOT323-3 | 150°C (Max) |
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Infineon Technologies |
DIODE GEN PURP 80V 250MA SOT23-3 |
устарелый | Standard | 80V | 250mA (DC) | 1.25V @ 150mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 1µA @ 70V | 1.5pF @ 0V, 1MHz | SMD Поверхностный монтаж | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | -65°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP 80V 250MA SOT23-3 |
устарелый | Standard | 80V | 250mA (DC) | 1.25V @ 150mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 1µA @ 70V | 1.5pF @ 0V, 1MHz | SMD Поверхностный монтаж | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | -65°C ~ 150°C |
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Infineon Technologies |
DIODE GEN PURP 80V 250MA SOT323 |
устарелый | Standard | 80V | 250mA (DC) | 1.25V @ 150mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 1µA @ 75V | 2pF @ 0V, 1MHz | SMD Поверхностный монтаж | SC-70, SOT-323 | PG-SOT323-3 | 150°C (Max) |
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Infineon Technologies |
DIODE GEN PURP 80V 250MA SOT23-3 |
устарелый | Standard | 80V | 250mA (DC) | 1.25V @ 150mA | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 5nA @ 75V | 2pF @ 0V, 1MHz | SMD Поверхностный монтаж | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 150°C (Max) |
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Infineon Technologies |
DIODE GEN PURP 200V 250MA SOT23 |
устарелый | Standard | 200V | 250mA (DC) | 1.25V @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 100nA @ 200V | 5pF @ 0V, 1MHz | SMD Поверхностный монтаж | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 150°C (Max) |
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Infineon Technologies |
DIODE GEN PURP 80V 200MA TSLP-2 |
устарелый | Standard | 80V | 200mA (DC) | 1.25V @ 150mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 1µA @ 75V | 2pF @ 0V, 1MHz | SMD Поверхностный монтаж | SOD-882 | PG-TSLP-2 | 150°C (Max) |
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Infineon Technologies |
DIODE GEN PURP 200V 250MA SOD323 |
устарелый | Standard | 200V | 250mA (DC) | 1.25V @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 100nA @ 200V | 5pF @ 0V, 1MHz | SMD Поверхностный монтаж | SC-76, SOD-323 | PG-SOD323-2 | 150°C (Max) |
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Infineon Technologies |
DIODE SCHOTTKY 70V 70MA SOT23-3 |
в производстве | Schottky | 70V | 70mA (DC) | 1V @ 15mA | Small Signal =< 200mA (Io), Any Speed | 100ps | 100nA @ 50V | 2pF @ 0V, 1MHz | SMD Поверхностный монтаж | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | -55°C ~ 125°C |