IXYS Corporation агент по продажам - PMIC - драйверы Gate - IXDI414SI IXDI414YI - ICCHIP

номер части	Производитель / Марка	Краткое описание	Статус детали	Управляемая конфигурация	Тип канала	Количество драйверов	Тип ворот	Напряжение - Поставка	Напряжение логики - VIL, VIH	Текущий - пиковый выход (источник, раковина)	Тип ввода	Высокое боковое напряжение - макс (бутстрап)	Время нарастания / падения (Тип)	Рабочая Температура	Тип монтажа	Упаковка / чехол	Пакет устройств поставщика
IXDI414SI	IXYS	IC DRIVER MOSF/IGBT 14A 14-SOIC	устарелый	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3.5V	14A, 14A	Inverting	-	22ns, 20ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	14-SOIC (0.154", 3.90mm Width)	14-SOIC
IXDI414YI	IXYS	IC DRIVER MOSF/IGBT 14A TO263-5	устарелый	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3.5V	14A, 14A	Inverting	-	22ns, 20ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	TO-263-6, D²Pak (5 Leads + Tab), TO-263BA	TO-263 (D²Pak)
IXDI430CI	IXYS	IC DRVR MOSF/IGBT 30A TO220-5	устарелый	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	8.5 V ~ 35 V	0.8V, 3.5V	30A, 30A	Inverting	-	18ns, 16ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-5	TO-220-5
IXDI430MCI	IXYS	IC DRVR MOSF/IGBT 30A TO220-5	устарелый	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	8.5 V ~ 35 V	0.8V, 3.5V	30A, 30A	Inverting	-	18ns, 16ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-5	TO-220-5
IXDI430MYI	IXYS	IC DRVR MOSF/IGBT 30A TO263-5	устарелый	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	8.5 V ~ 35 V	0.8V, 3.5V	30A, 30A	Inverting	-	18ns, 16ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	TO-263-6, D²Pak (5 Leads + Tab), TO-263BA	TO-263 (D²Pak)
IXDI430YI	IXYS	IC DRVR MOSF/IGBT 30A TO263-5	устарелый	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	8.5 V ~ 35 V	0.8V, 3.5V	30A, 30A	Inverting	-	18ns, 16ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	TO-263-6, D²Pak (5 Leads + Tab), TO-263BA	TO-263 (D²Pak)
IXDI502D1	IXYS	IC GATE DRIVER DUAL 2A 6-DFN	устарелый	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 30 V	0.8V, 3V	2A, 2A	Inverting	-	7.5ns, 6.5ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	6-VDFN Exposed Pad	6-DFN (4x5)
IXDI502SIA	IXYS	IC GATE DRIVER DUAL 2A 8-SOIC	устарелый	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 30 V	0.8V, 3V	2A, 2A	Inverting	-	7.5ns, 6.5ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IXDI504D1	IXYS	IC GATE DRIVER DUAL 4A 6-DFN	устарелый	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 30 V	0.8V, 3V	4A, 4A	Inverting	-	9ns, 8ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	6-VDFN Exposed Pad	6-DFN (4x5)
IXDI504D1T/R	IXYS	IC GATE DRIVER DUAL 4A 6-DFN	устарелый	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 30 V	0.8V, 3V	4A, 4A	Inverting	-	9ns, 8ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	6-VDFN Exposed Pad	6-DFN (4x5)
IXDI504PI	IXYS	IC GATE DRIVER DUAL 4A 8-DIP	устарелый	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 30 V	0.8V, 3V	4A, 4A	Inverting	-	9ns, 8ns	-55°C ~ 150°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
IXDI504SIA	IXYS	IC GATE DRIVER DUAL 4A 8-SOIC	устарелый	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 30 V	0.8V, 3V	4A, 4A	Inverting	-	9ns, 8ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IXDI504SIAT/R	IXYS	IC GATE DRIVER DUAL 4A 8-SOIC	устарелый	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 30 V	0.8V, 3V	4A, 4A	Inverting	-	9ns, 8ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IXDI509D1	IXYS	IC GATE DRIVER SGL 9A 6-DFN	устарелый	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 30 V	0.8V, 2.4V	9A, 9A	Inverting	-	25ns, 23ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	6-VDFN Exposed Pad	6-DFN (4x5)
IXDI509D1T/R	IXYS	IC GATE DRIVER SGL 9A 6-DFN	устарелый	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 30 V	0.8V, 2.4V	9A, 9A	Inverting	-	25ns, 23ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	6-VDFN Exposed Pad	6-DFN (4x5)
IXDI509PI	IXYS	IC GATE DRIVER SGL 9A 8-DIP	устарелый	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 30 V	0.8V, 2.4V	9A, 9A	Inverting	-	25ns, 23ns	-55°C ~ 150°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
IXDI509SIA	IXYS	IC GATE DRIVER SGL 9A 8-SOIC	устарелый	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 30 V	0.8V, 2.4V	9A, 9A	Inverting	-	25ns, 23ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IXDI509SIAT/R	IXYS	IC GATE DRIVER SGL 9A 8-SOIC	устарелый	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 30 V	0.8V, 2.4V	9A, 9A	Inverting	-	25ns, 23ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IXDI514D1	IXYS	IC GATE DRIVER SGL 14A 6-DFN	устарелый	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 30 V	1V, 2.5V	14A, 14A	Inverting	-	25ns, 22ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	6-VDFN Exposed Pad	6-DFN (4x5)
IXDI514D1T/R	IXYS	IC GATE DRIVER SGL 14A 6-DFN	устарелый	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 30 V	1V, 2.5V	14A, 14A	Inverting	-	25ns, 22ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	6-VDFN Exposed Pad	6-DFN (4x5)
IXDI514PI	IXYS	IC GATE DRIVER SGL 14A 8-DIP	устарелый	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 30 V	1V, 2.5V	14A, 14A	Inverting	-	25ns, 22ns	-55°C ~ 150°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
IXDI514SIA	IXYS	IC GATE DRIVER SGL 14A 8-SOIC	устарелый	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 30 V	1V, 2.5V	14A, 14A	Inverting	-	25ns, 22ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IXDI514SIAT/R	IXYS	IC GATE DRIVER SGL 14A 8-SOIC	устарелый	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 30 V	1V, 2.5V	14A, 14A	Inverting	-	25ns, 22ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IXDN402PI	IXYS	IC MOSFET DRVR DUAL 2A 8-DIP	устарелый	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	2A, 2A	Non-Inverting	-	8ns, 8ns	-55°C ~ 150°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
IXDN402SI	IXYS	IC MOSFET DRVR DUAL 2A 8-SOIC	устарелый	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	2A, 2A	Non-Inverting	-	8ns, 8ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IXDN402SIA	IXYS	IC MOSFET DRVR DUAL 2A 8-SOIC	устарелый	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	2A, 2A	Non-Inverting	-	8ns, 8ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IXDN409CI	IXYS	IC MOSFET DRVR 9A LOSIDE TO220-5	устарелый	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3.5V	9A, 9A	Non-Inverting	-	10ns, 10ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-5	TO-220-5
IXDN409PI	IXYS	IC MOSFET DRVR 9A LOSIDE 8-DIP	устарелый	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3.5V	9A, 9A	Non-Inverting	-	10ns, 10ns	-55°C ~ 150°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
IXDN409SI	IXYS	IC MOSFET DRVR 9A LOSIDE 8-SOIC	устарелый	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3.5V	9A, 9A	Non-Inverting	-	10ns, 10ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IXDN409SIA	IXYS	IC MOSFET DRVR 9A LOSIDE 8-SOIC	устарелый	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3.5V	9A, 9A	Non-Inverting	-	10ns, 10ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IXDN409YI	IXYS	IC MOSFET DRVR 9A LOSIDE TO263-5	устарелый	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3.5V	9A, 9A	Non-Inverting	-	10ns, 10ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	TO-263-6, D²Pak (5 Leads + Tab), TO-263BA	TO-263 (D²Pak)
IXDN414CI	IXYS	IC DRIVER MOSF/IGBT 14A TO-220-5	устарелый	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3.5V	14A, 14A	Non-Inverting	-	22ns, 20ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-5	TO-220-5
IXDN414PI	IXYS	IC DRIVER MOSF/IGBT 14A 8-DIP	устарелый	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3.5V	14A, 14A	Non-Inverting	-	22ns, 20ns	-55°C ~ 150°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
IXDN414YI	IXYS	IC DRIVER MOSF/IGBT 14A 5-TO-263	устарелый	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3.5V	14A, 14A	Non-Inverting	-	22ns, 20ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	TO-263-6, D²Pak (5 Leads + Tab), TO-263BA	TO-263 (D²Pak)
IXDN430CI	IXYS	IC DRVR MOSF/IGBT 30A TO220-5	устарелый	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	8.5 V ~ 35 V	0.8V, 3.5V	30A, 30A	Non-Inverting	-	18ns, 16ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-5	TO-220-5
IXDN430MCI	IXYS	IC DRVR MOSF/IGBT 30A TO220-5	устарелый	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	8.5 V ~ 35 V	0.8V, 3.5V	30A, 30A	Non-Inverting	-	18ns, 16ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-5	TO-220-5
IXDN430YI	IXYS	IC DRVR MOSF/IGBT 30A TO263-5	устарелый	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	8.5 V ~ 35 V	0.8V, 3.5V	30A, 30A	Non-Inverting	-	18ns, 16ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	TO-263-6, D²Pak (5 Leads + Tab), TO-263BA	TO-263 (D²Pak)
IXDN502D1	IXYS	IC GATE DRIVER DUAL 2A 6-DFN	устарелый	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 30 V	0.8V, 3V	2A, 2A	Non-Inverting	-	7.5ns, 6.5ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	6-VDFN Exposed Pad	6-DFN (4x5)
IXDN502SIA	IXYS	IC GATE DRIVER DUAL 2A 8-SOIC	устарелый	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 30 V	0.8V, 3V	2A, 2A	Non-Inverting	-	7.5ns, 6.5ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IXDN504D1	IXYS	IC GATE DRIVER DUAL 4A 6-DFN	устарелый	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 30 V	0.8V, 3V	4A, 4A	Non-Inverting	-	9ns, 8ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	6-VDFN Exposed Pad	6-DFN (4x5)
IXDN504PI	IXYS	IC GATE DRIVER DUAL 4A 8-DIP	устарелый	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 30 V	0.8V, 3V	4A, 4A	Non-Inverting	-	9ns, 8ns	-55°C ~ 150°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
IXDN504SIA	IXYS	IC GATE DRIVER DUAL 4A 8-SOIC	устарелый	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 30 V	0.8V, 3V	4A, 4A	Non-Inverting	-	9ns, 8ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IXDN504SIAT/R	IXYS	IC GATE DRIVER DUAL 4A 8-SOIC	устарелый	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 30 V	0.8V, 3V	4A, 4A	Non-Inverting	-	9ns, 8ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IXDN509D1	IXYS	IC GATE DRIVER SGL 9A 6-DFN	устарелый	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 30 V	0.8V, 2.4V	9A, 9A	Non-Inverting	-	25ns, 23ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	6-VDFN Exposed Pad	6-DFN (4x5)
IXDN509PI	IXYS	IC GATE DRIVER SGL 9A 8-DIP	устарелый	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 30 V	0.8V, 2.4V	9A, 9A	Non-Inverting	-	25ns, 23ns	-55°C ~ 150°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
IXDN509SIA	IXYS	IC GATE DRIVER SGL 9A 8-SOIC	устарелый	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 30 V	0.8V, 2.4V	9A, 9A	Non-Inverting	-	25ns, 23ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IXDN509SIAT/R	IXYS	IC GATE DRIVER SGL 9A 8-SOIC	устарелый	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 30 V	0.8V, 2.4V	9A, 9A	Non-Inverting	-	25ns, 23ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IXDN514D1	IXYS	IC GATE DRIVER SGL 14A 6-DFN	устарелый	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 30 V	1V, 2.5V	14A, 14A	Non-Inverting	-	25ns, 22ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	6-VDFN Exposed Pad	6-DFN (4x5)
IXDN514D1T/R	IXYS	IC GATE DRIVER SGL 14A 6-DFN	устарелый	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 30 V	1V, 2.5V	14A, 14A	Non-Inverting	-	25ns, 22ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	6-VDFN Exposed Pad	6-DFN (4x5)
IXDN514PI	IXYS	IC GATE DRIVER SGL 14A 8-DIP	устарелый	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 30 V	1V, 2.5V	14A, 14A	Non-Inverting	-	25ns, 22ns	-55°C ~ 150°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP

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