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STMicroelectronics |
IC MOSFET DVR 4A DUAL 8SOIC |
в производстве | Low-Side | Independent | 2 | IGBT, N-Channel MOSFET | 5 V ~ 18 V | 0.8V, 2.5V | 4A, 4A | Non-Inverting | - | 45ns, 35ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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STMicroelectronics |
IC IGBT/MOSFET DRIVER ADV 8-SOIC |
в производстве | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 12 V ~ 26 V | 0.8V, 4.2V | 1.3A, 1.7A | Non-Inverting | - | 100ns, 100ns (Max) | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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STMicroelectronics |
IC DRIVER HI/LO SIDE HV 8-SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 17V (Max) | 1.1V, 1.8V | 400mA, 650mA | Inverting | 600V | 70ns, 40ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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STMicroelectronics |
IC DRIVER HALF BRIDGE HV 8SOIC |
в производстве | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 14.6 V ~ 16.6 V | 1.5V, 3.6V | 400mA, 650mA | Inverting | 600V | 50ns, 30ns | -45°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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STMicroelectronics |
IC DRIVER HV HI/LOW SIDE 16SO |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 12.5 V ~ 20 V | 1.1V, 1.9V | 290mA, 430mA | Non-Inverting | 600V | 75ns, 35ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 16-SOIC (0.154", 3.90mm Width) | 16-SO |
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STMicroelectronics |
IC DRIVER HALF BRIDGE HV 8-SOIC |
в производстве | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 14.6 V ~ 16.6 V | 1.5V, 3.6V | 400mA, 650mA | Inverting | 600V | 50ns, 30ns | -45°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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STMicroelectronics |
IC DRIVER HI/LO SIDE HV 8-SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 17V (Max) | 1.5V, 3.6V | 400mA, 650mA | Inverting | 600V | 50ns, 30ns | -45°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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STMicroelectronics |
IC DRIVER HV HI/LOW SIDE SOIC-14 |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 12.5 V ~ 20 V | 1.1V, 1.9V | 290mA, 430mA | Non-Inverting | 600V | 75ns, 35ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 14-SOIC (0.154", 3.90mm Width) | 14-SO |
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STMicroelectronics |
IC DRIVER HV HI/LOW SIDE 16SO |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 12.5 V ~ 20 V | 1.1V, 1.9V | 290mA, 430mA | Non-Inverting | 600V | 75ns, 35ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 16-SOIC (0.154", 3.90mm Width) | 16-SO |
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STMicroelectronics |
IC DRIVER HI/LO SIDE 8-SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 1.1V, 1.9V | 290mA, 430mA | Inverting, Non-Inverting | 600V | 75ns, 35ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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STMicroelectronics |
IC DRIVER HI/LO SIDE HV 8-DIP |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 17V (Max) | 1.5V, 3.6V | 400mA, 650mA | Inverting | 600V | 50ns, 30ns | -45°C ~ 125°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
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STMicroelectronics |
IC IGBT/MOSFET DRIVER ADV 8-SOIC |
в производстве | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 12 V ~ 26 V | 0.8V, 4.2V | 1.3A, 1.7A | Non-Inverting | - | 100ns, 100ns (Max) | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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STMicroelectronics |
IC DRVR HALF BRDG HV W/OSC 8DIP |
в производстве | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 16.6 V | - | 170mA, 270mA | RC Input Circuit | 600V | - | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-Mini DIP |
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STMicroelectronics |
IC DRIVER FLY BACK 8-SOIC |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 4 V ~ 5.5 V | - | 1.5A, 1.5A | Non-Inverting | - | 40ns, 40ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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STMicroelectronics |
IC SMART DRIVER SYNC 8-SOIC |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 4 V ~ 5.5 V | - | 1.5A, 1.5A | Non-Inverting | - | 40ns, 40ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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STMicroelectronics |
POWER MGMT MOSFET/POWER DRIVER |
в производстве | - | - | - | - | - | - | - | - | - | - | - | SMD Поверхностный монтаж | 14-SOIC (0.154", 3.90mm Width) | 14-SO |
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STMicroelectronics |
POWER MGMT MOSFET/POWER DRIVER |
в производстве | - | - | - | - | - | - | - | - | - | - | - | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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STMicroelectronics |
IC MOSFET DRIVER HIGH CURR 8SOIC |
устарелый | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 5 V ~ 12 V | 1V, 2.3V | 2A, 2A | Non-Inverting | 41V | - | 0°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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STMicroelectronics |
IC MOSFET DRIVER HI CURNT 8SOIC |
устарелый | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 5 V ~ 12 V | 1V, 2.3V | 2A, 2A | Non-Inverting | 41V | - | 0°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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STMicroelectronics |
IC MOSFET DVR 2CH LOSIDE SOT23-5 |
в производстве | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 10 V ~ 18 V | - | 800mA, 1A | Non-Inverting | - | 20ns, 20ns (Max) | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SC-74A, SOT-753 | SOT-23-5 |
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STMicroelectronics |
IC MOSFET DVR N-CH DUAL 8-VFDFPN |
в производстве | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 5 V ~ 12 V | 0.8V, 2V | 3.5A, - | Non-Inverting | 41V | - | 0°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-VFDFN Exposed Pad | 8-VFDFN |
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STMicroelectronics |
IC MOSFET DVR N-CH DUAL 8-VFDFPN |
Discontinued at - | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 5 V ~ 12 V | 0.8V, 2V | 3.5A, - | Non-Inverting | 41V | - | 0°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-VFDFN Exposed Pad | 8-VFDFPN (3x3) |
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STMicroelectronics |
IC DRIVER MOS/IGBT TRIPLE 16SOIC |
в производстве | Low-Side | Independent | 3 | IGBT, N-Channel MOSFET | 4 V ~ 16 V | 0.8V, 2V | - | Inverting, Non-Inverting | - | - | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 16-SOIC (0.154", 3.90mm Width) | 16-SO |
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STMicroelectronics |
IC IGBT/MOS DRIVER TRPL 16-SOIC |
в производстве | Low-Side | Independent | 3 | IGBT, N-Channel MOSFET | 4 V ~ 16 V | 0.8V, 2V | - | Inverting, Non-Inverting | - | - | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 16-SOIC (0.154", 3.90mm Width) | 16-SO |
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STMicroelectronics |
IC DRIVER HIGH/LOW SIDE 8-SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 17V (Max) | 1.5V, 3.6V | 400mA, 650mA | Inverting | 600V | 50ns, 30ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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STMicroelectronics |
IC GATE DRVR HALF-BRIDGE 8SO |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 1.1V, 1.9V | 290mA, 430mA | Non-Inverting | 600V | 75ns, 35ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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STMicroelectronics |
IC MOSFET DRIVER HI CURR 8VFDFPN |
устарелый | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 5 V ~ 12 V | 0.8V, 2V | 2A, - | Non-Inverting | 41V | - | 0°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-VFDFN Exposed Pad | 8-VFDFPN (3x3) |
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STMicroelectronics |
IC DRIVER HI/LO SIDE HV 8-SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 17V (Max) | 1.5V, 3.6V | 400mA, 650mA | Inverting | 600V | 50ns, 30ns | -45°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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STMicroelectronics |
POWER MGMT MOSFET/POWER DRIVER |
в производстве | - | - | - | - | - | - | - | - | - | - | - | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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STMicroelectronics |
IC DRIVER HI/LO SIDE HV 8-SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 17V (Max) | 1.5V, 3.6V | 400mA, 650mA | Inverting | 600V | 50ns, 30ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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STMicroelectronics |
IC DRVR HALF-BRG W/OSC HV 8-SOIC |
в производстве | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 16.6 V | - | 170mA, 270mA | RC Input Circuit | 600V | - | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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STMicroelectronics |
IC DRVR HALF BRDG HV OSC 8-SOIC |
в производстве | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 16.6 V | - | 170mA, 270mA | RC Input Circuit | 600V | - | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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STMicroelectronics |
IC SMART DRIVER SYNC 8-SOIC |
в производстве | Low-Side | Synchronous | 2 | N-Channel MOSFET | 4.5 V ~ 5.5 V | - | 2A, 3.5A | Non-Inverting | - | 40ns, 30ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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STMicroelectronics |
IC SMART DRIVER SYNC 8-SOIC |
в производстве | Low-Side | Synchronous | 2 | N-Channel MOSFET | 4.5 V ~ 5.5 V | - | 2A, 3.5A | Non-Inverting | - | 40ns, 30ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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STMicroelectronics |
IC SYNC RECT SMART DRIVER 8 SOIC |
в производстве | Low-Side | Synchronous | 2 | N-Channel MOSFET | 4.5 V ~ 5.5 V | - | 2A, 3.5A | Non-Inverting | - | 40ns, 30ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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STMicroelectronics |
IC DRIVER IGBT/MOSFET 14-SOIC |
в производстве | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 12 V ~ 26 V | 0.8V, 4.2V | 1.5A, 2.3A | Non-Inverting | - | 130ns, 75ns (Max) | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 14-SOIC (0.154", 3.90mm Width) | 14-SO |
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STMicroelectronics |
IC DRIVER HALF BRDG W/OSC 8-DIP |
в производстве | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 16.6 V | - | 170mA, 270mA | RC Input Circuit | 600V | - | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-Mini DIP |
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STMicroelectronics |
IC DRIVER GATE IGBT/MOSFET 8SOIC |
в производстве | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 12 V ~ 26 V | 0.8V, 4.2V | 1.3A, 1.7A | Non-Inverting | - | 100ns, 100ns (Max) | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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STMicroelectronics |
IC FET DVR 3PHASE BLDC 64TQFP |
в производстве | Half-Bridge | 3-Phase | 6 | N-Channel MOSFET | 5 V ~ 54 V | 0.8V, 2V | - | - | - | 35ns, 35ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 64-TQFP Exposed Pad | 64-TQFP-EP (10x10) |
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STMicroelectronics |
IC GATE DRIVER HALF BRDGE 14SO |
в производстве | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 1.1V, 1.9V | 290mA, 430mA | Non-Inverting | 600V | 75ns, 35ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 14-SOIC (0.154", 3.90mm Width) | 14-SO |
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STMicroelectronics |
IC DRIVER HI/LO SIDE HV 8-SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 17V (Max) | 1.1V, 1.8V | 400mA, 650mA | Inverting | 600V | 70ns, 40ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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STMicroelectronics |
IC DRIVER HV HI/LOW SIDE 14SO |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 12.5 V ~ 20 V | 1.1V, 1.9V | 290mA, 430mA | Non-Inverting | 600V | 75ns, 35ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 14-SOIC (0.154", 3.90mm Width) | 14-SO |
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STMicroelectronics |
IC DRIVER HIGH/LOW SIDE 14-SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 17V (Max) | 1.5V, 3.6V | 400mA, 650mA | Inverting | 600V | 50ns, 30ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 14-SOIC (0.154", 3.90mm Width) | 14-SO |
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STMicroelectronics |
IC DRIVER HV HI/LOW SIDE SOIC-14 |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 17V (Max) | 1.5V, 3.6V | 400mA, 650mA | Inverting | 600V | 50ns, 30ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 14-SOIC (0.154", 3.90mm Width) | 14-SO |
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STMicroelectronics |
IC GATE DVR HV BCD OFFLINE 8SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 1.1V, 1.9V | 290mA, 430mA | Non-Inverting | 600V | 75ns, 35ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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STMicroelectronics |
POWER MGMT MOSFET/POWER DRIVER |
в производстве | - | - | - | - | - | - | - | - | - | - | - | SMD Поверхностный монтаж | 14-SOIC (0.154", 3.90mm Width) | 14-SO |
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STMicroelectronics |
POWER MGMT MOSFET/POWER DRIVER |
в производстве | - | - | - | - | - | - | - | - | - | - | - | SMD Поверхностный монтаж | 14-SOIC (0.154", 3.90mm Width) | 14-SO |
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STMicroelectronics |
IC GATE DVR 1A LOW SIDE SOT23-6 |
в производстве | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 10 V ~ 18 V | - | 800mA, 1A | Non-Inverting | - | 20ns, 20ns (Max) | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23-6 | SOT-23-6 |
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STMicroelectronics |
IC MOSFET DRIVER DUAL 8SOIC |
устарелый | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 5 V ~ 12 V | 0.8V, 2V | 2A, - | Non-Inverting | 41V | - | 0°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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STMicroelectronics |
IC DRIVER HI/LO SIDE HV 8-DIP |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 17V (Max) | 1.1V, 1.8V | 400mA, 650mA | Inverting | 600V | 70ns, 40ns | -40°C ~ 125°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
