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IXYS-RF |
IC MOSFET DVR RF 30A HI DCB |
в производстве | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 8 V ~ 18 V | 0.8V, 3.5V | 30A, 30A | Non-Inverting | - | 4ns, 4ns | -40°C ~ 150°C (TJ) | - | 6-SMD, Flat Lead Exposed Pad | - |
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IXYS-RF |
IC MOSFET DVR RF 30A LOW DCB |
в производстве | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 8 V ~ 18 V | 0.8V, 3.5V | 30A, 30A | Non-Inverting | - | 4ns, 4ns | -40°C ~ 150°C (TJ) | - | 6-SMD, Flat Lead Exposed Pad | - |
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IXYS-RF |
15A 15V MOSFET DRIVER |
в производстве | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 8 V ~ 18 V | 0.8V, 3.5V | 15A, 15A | Non-Inverting | - | 4ns, 4ns | -40°C ~ 85°C | SMD Поверхностный монтаж | 6-SMD, Flat Leads | 6-SMD |
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IXYS-RF |
500V 18A INTEGRATED POWER MOSFET |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 8 V ~ 18 V | 0.8V, 3.5V | 95A, 95A | Non-Inverting | 500V | 3.4ns, 1.65ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 10-SMD, Flat Lead | 10-SMD |
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IXYS-RF |
15A DUAL MOSFET DRIVER |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 8 V ~ 18 V | 0.8V, 3.5V | 15A, 15A | Non-Inverting | - | 4ns, 4ns | -40°C ~ 85°C | SMD Поверхностный монтаж | 8-SMD, Flat Lead | 8-SMD |
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IXYS-RF |
IXZ631DF12N100 1000V 12A INTEGRA |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 8 V ~ 18 V | 0.8V, 3.5V | 72A, 72A | Non-Inverting | 1000V | 2.4ns, 1.55ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 10-SMD, Flat Lead | 10-SMD |
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IXYS-RF |
15A LOW SIDE MOSFET DRIVER IN SM |
в производстве | Low-Side | Single | 2 | N-Channel, P-Channel MOSFET | 8 V ~ 18 V | 0.8V, 3.5V | 15A, 15A | Non-Inverting | - | 4ns, 4ns | -40°C ~ 85°C | SMD Поверхностный монтаж | 16-SMD | - |
