IXYS Integrated Circuits Division агент по продажам - PMIC - драйверы Gate - IX4427MTR IX4428MTR

номер части	Производитель / Марка	Краткое описание	Статус детали	Управляемая конфигурация	Тип канала	Количество драйверов	Тип ворот	Напряжение - Поставка	Напряжение логики - VIL, VIH	Текущий - пиковый выход (источник, раковина)	Тип ввода	Высокое боковое напряжение - макс (бутстрап)	Время нарастания / падения (Тип)	Рабочая Температура	Тип монтажа	Упаковка / чехол	Пакет устройств поставщика
IX4427MTR	IXYS Integrated Circuits Division	IC MOSFET DVR NONINV 1.5A 8-DFN	в производстве	Low-Side	Independent	2	N-Channel, P-Channel MOSFET	4.5 V ~ 30 V	0.8V, 2.4V	1.5A, 1.5A	Non-Inverting	-	10ns, 8ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-VDFN Exposed Pad	8-DFN (3x3)
IX4428MTR	IXYS Integrated Circuits Division	IC MOSFET DVR INV/NON 1.5A 8-DFN	в производстве	Low-Side	Independent	2	N-Channel, P-Channel MOSFET	4.5 V ~ 30 V	0.8V, 2.4V	1.5A, 1.5A	Inverting, Non-Inverting	-	10ns, 8ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-VDFN Exposed Pad	8-DFN (3x3)
IXDD609SIA	IXYS Integrated Circuits Division	IC GATE DVR 9A NON-INV 8-SOIC	в производстве	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	9A, 9A	Non-Inverting	-	22ns, 15ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IXDN604SIA	IXYS Integrated Circuits Division	IC GATE DVR 4A DUAL NONINV 8SOIC	в производстве	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	4A, 4A	Non-Inverting	-	9ns, 8ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IXDD604SIA	IXYS Integrated Circuits Division	IC GATE DVR 4A DUAL ENABLE 8SOIC	в производстве	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	4A, 4A	Non-Inverting	-	9ns, 8ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IXDD609SI	IXYS Integrated Circuits Division	IC GATE DVR 9A NON-INV 8-SOIC	в производстве	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	9A, 9A	Non-Inverting	-	22ns, 15ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
IXDN609SI	IXYS Integrated Circuits Division	IC GATE DVR 9A NON-INV 8-SOIC	в производстве	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	9A, 9A	Non-Inverting	-	22ns, 15ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
IXDD604SI	IXYS Integrated Circuits Division	IC GATE DVR 4A DUAL ENABLE 8SOIC	в производстве	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	4A, 4A	Non-Inverting	-	9ns, 8ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
IXDF604SI	IXYS Integrated Circuits Division	IC GATE DVR 4A DUAL IN/NON 8SOIC	в производстве	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	4A, 4A	Inverting, Non-Inverting	-	9ns, 8ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
IXDN604SI	IXYS Integrated Circuits Division	IC GATE DVR 4A DUAL NONINV 8SOIC	в производстве	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	4A, 4A	Non-Inverting	-	9ns, 8ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
IXDN630YI	IXYS Integrated Circuits Division	IC GATE DRIVER LOW SIDE 5TO263	в производстве	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	12.5 V ~ 35 V	0.8V, 3.5V	30A, 30A	Non-Inverting	-	11ns, 11ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	TO-263-6, D²Pak (5 Leads + Tab), TO-263BA	TO-263-5
IXDN630CI	IXYS Integrated Circuits Division	IC GATE DRIVER LOW SIDE 5TO220	в производстве	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	12.5 V ~ 35 V	0.8V, 3.5V	30A, 30A	Non-Inverting	-	11ns, 11ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-5	TO-220-5
IXDD630YI	IXYS Integrated Circuits Division	IC GATE DRIVER LOW SIDE 5TO263	в производстве	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	12.5 V ~ 35 V	0.8V, 3.5V	30A, 30A	Non-Inverting	-	11ns, 11ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	TO-263-6, D²Pak (5 Leads + Tab), TO-263BA	TO-263-5
IXDD630MYI	IXYS Integrated Circuits Division	IC GATE DRIVER LOW SIDE TO-263-5	в производстве	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	9 V ~ 35 V	0.8V, 3.5V	30A, 30A	Non-Inverting	-	11ns, 11ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	TO-263-6, D²Pak (5 Leads + Tab), TO-263BA	TO-263-5
IXDD609D2TR	IXYS Integrated Circuits Division	IC GATE DVR 9A NON-INV 8DFN	в производстве	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	9A, 9A	Non-Inverting	-	22ns, 15ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-VDFN Exposed Pad	8-DFN-EP (5x4)
IX4428N	IXYS Integrated Circuits Division	IC MOSFET DRIVER 1.5A 8SOIC	в производстве	Low-Side	Independent	2	N-Channel, P-Channel MOSFET	4.5 V ~ 30 V	0.8V, 2.4V	1.5A, 1.5A	Inverting, Non-Inverting	-	10ns, 8ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IX4426N	IXYS Integrated Circuits Division	IC MOSFET DRIVER 1.5A 8SOIC	в производстве	Low-Side	Independent	2	N-Channel, P-Channel MOSFET	4.5 V ~ 30 V	0.8V, 2.4V	1.5A, 1.5A	Inverting	-	10ns, 8ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IX4427N	IXYS Integrated Circuits Division	IC MOSFET DRIVER 1.5A 8SOIC	в производстве	Low-Side	Independent	2	N-Channel, P-Channel MOSFET	4.5 V ~ 30 V	0.8V, 2.4V	1.5A, 1.5A	Non-Inverting	-	10ns, 8ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IX4340NE	IXYS Integrated Circuits Division	5-AMP DUAL LOW-SIDE MOSFET DRIVE	в производстве	Low-Side	Independent	2	N-Channel, P-Channel MOSFET	5 V ~ 20 V	0.8V, 2.5V	5A, 5A	Non-Inverting	-	7ns, 7ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC
IXDN602SIA	IXYS Integrated Circuits Division	DUAL LOW SIDE MOSFET DRIVER	в производстве	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	2A, 2A	Non-Inverting	-	7.5ns, 6.5ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IXDF602SIA	IXYS Integrated Circuits Division	MOSFET N-CH 2A DUAL LO SIDE 8-SO	в производстве	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	2A, 2A	Inverting, Non-Inverting	-	7.5ns, 6.5ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IXDI602SIA	IXYS Integrated Circuits Division	MOSFET N-CH 2A DUAL LO SIDE 8-SO	в производстве	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	2A, 2A	Inverting	-	7.5ns, 6.5ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IXDD609PI	IXYS Integrated Circuits Division	IC GATE DVR 9A NON-INV 8-DIP	в производстве	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	9A, 9A	Non-Inverting	-	22ns, 15ns	-55°C ~ 150°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-DIP
IXDN604PI	IXYS Integrated Circuits Division	IC GATE DVR 4A DUAL NONINV 8DIP	в производстве	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	4A, 4A	Non-Inverting	-	9ns, 8ns	-55°C ~ 150°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm), 6 Leads	8-DIP
IXDF604SIA	IXYS Integrated Circuits Division	IC GATE DVR 4A DIFF 8-SOIC	в производстве	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	4A, 4A	Inverting, Non-Inverting	-	9ns, 8ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IXDD614PI	IXYS Integrated Circuits Division	MOSFET DVR ULT FAST 14A 8-DIP	в производстве	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	14A, 14A	Non-Inverting	-	25ns, 18ns	-55°C ~ 150°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-DIP
IXDI604SI	IXYS Integrated Circuits Division	IC GATE DVR 4A INV 8-SOIC	в производстве	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	4A, 4A	Inverting	-	9ns, 8ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
IXDD614CI	IXYS Integrated Circuits Division	MOSFET N-CH 14A LO SIDE TO-220-5	в производстве	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	14A, 14A	Non-Inverting	-	25ns, 18ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-5	TO-220-5
IX4424N	IXYS Integrated Circuits Division	IC MOSFET DRIVER 3A SOIC	в производстве	Low-Side	Independent	2	N-Channel, P-Channel MOSFET	4.5 V ~ 30 V	0.8V, 3V	3A, 3A	Non-Inverting	-	18ns, 18ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IX21844N	IXYS Integrated Circuits Division	IC GATE DVR HALF 600V 14SOIC	в производстве	Half-Bridge	Synchronous	2	IGBT, N-Channel MOSFET	10 V ~ 20 V	0.8V, 2V	1.4A, 1.8A	Non-Inverting	600V	23ns, 14ns	-40°C ~ 150°C (TJ)	SMD Поверхностный монтаж	14-SOIC (0.154", 3.90mm Width)	14-SOIC
IXDD609CI	IXYS Integrated Circuits Division	IC GATE DVR 9A DUAL HS TO220-5	в производстве	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	9A, 9A	Non-Inverting	-	22ns, 15ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-5	TO-220-5
IXDI609YI	IXYS Integrated Circuits Division	IC GATE DVR 9A DUAL HS TO263-5	в производстве	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	9A, 9A	Inverting	-	22ns, 15ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	TO-263-6, D²Pak (5 Leads + Tab), TO-263BA	TO-263-5
IX2120B	IXYS Integrated Circuits Division	1200V HIGH AND LOW SIDE GATE DRI	в производстве	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	15 V ~ 20 V	6V, 9.5V	2A, 2A	Non-Inverting	1200V	9.4ns, 9.7ns	-40°C ~ 150°C (TJ)	SMD Поверхностный монтаж	28-SOIC (0.295", 7.50mm Width)	28-SOIC
IX2120BTR	IXYS Integrated Circuits Division	1200V HIGH AND LOW SIDE GATE DRI	в производстве	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	15 V ~ 20 V	6V, 9.5V	2A, 2A	Non-Inverting	1200V	9.4ns, 9.7ns	-40°C ~ 150°C (TJ)	SMD Поверхностный монтаж	28-SOIC (0.295", 7.50mm Width)	28-SOIC
IXDN602PI	IXYS Integrated Circuits Division	MOSFET N-CH 2A DUAL LO SIDE 8-DI	в производстве	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	2A, 2A	Non-Inverting	-	7.5ns, 6.5ns	-55°C ~ 150°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-DIP
IXDI604PI	IXYS Integrated Circuits Division	IC GATE DVR 4A INV 8-DIP	в производстве	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	4A, 4A	Inverting	-	9ns, 8ns	-55°C ~ 150°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-DIP
IXDI604SIA	IXYS Integrated Circuits Division	IC GATE DVR 4A INV 8-SOIC	в производстве	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	4A, 4A	Inverting	-	9ns, 8ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IXDD604PI	IXYS Integrated Circuits Division	IC GATE DVR 4A DUAL ENABLE 8DIP	в производстве	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	4A, 4A	Non-Inverting	-	9ns, 8ns	-55°C ~ 150°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-DIP
IX4423N	IXYS Integrated Circuits Division	IC MOSFET DRIVER 3A SOIC	в производстве	Low-Side	Independent	2	N-Channel, P-Channel MOSFET	4.5 V ~ 30 V	0.8V, 3V	3A, 3A	Inverting	-	18ns, 18ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IXDN602SI	IXYS Integrated Circuits Division	MOSFET N-CH 2A DUAL LO SIDE 8-SO	в производстве	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	2A, 2A	Non-Inverting	-	7.5ns, 6.5ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
IX2113B	IXYS Integrated Circuits Division	IC GATE DVR HIGH/LOW 600V 16SOIC	в производстве	Half-Bridge	Independent	2	IGBT, N-Channel, P-Channel MOSFET	10 V ~ 20 V	6V, 9.5V	2A, 2A	Non-Inverting	600V	9.4ns, 9.7ns	-40°C ~ 150°C (TJ)	SMD Поверхностный монтаж	16-SOIC (0.295", 7.50mm Width)	16-SOIC
IX4427NTR	IXYS Integrated Circuits Division	IC MOSFET DRIVER 1.5A 8SOIC	в производстве	Low-Side	Independent	2	N-Channel, P-Channel MOSFET	4.5 V ~ 30 V	0.8V, 2.4V	1.5A, 1.5A	Non-Inverting	-	10ns, 8ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IX4426NTR	IXYS Integrated Circuits Division	IC MOSFET DRIVER 1.5A 8SOIC	в производстве	Low-Side	Independent	2	N-Channel, P-Channel MOSFET	4.5 V ~ 30 V	0.8V, 2.4V	1.5A, 1.5A	Inverting	-	10ns, 8ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IX4428NTR	IXYS Integrated Circuits Division	IC MOSFET DRIVER 1.5A 8SOIC	в производстве	Low-Side	Independent	2	N-Channel, P-Channel MOSFET	4.5 V ~ 30 V	0.8V, 2.4V	1.5A, 1.5A	Inverting, Non-Inverting	-	10ns, 8ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IX4426MTR	IXYS Integrated Circuits Division	IC MOSFET DVR INV 1.5A 8-DFN	в производстве	Low-Side	Independent	2	N-Channel, P-Channel MOSFET	4.5 V ~ 30 V	0.8V, 2.4V	1.5A, 1.5A	Inverting	-	10ns, 8ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-VDFN Exposed Pad	8-DFN (3x3)
IX4340N	IXYS Integrated Circuits Division	5A DUAL LOW-SIDE NON-INVERTING	в производстве	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IX4340NTR	IXYS Integrated Circuits Division	5A DUAL LOW-SIDE NON-INVERTING	в производстве	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXDF602D2TR	IXYS Integrated Circuits Division	2A MOSFET 8 DFN DUAL INV/NON-INV	в производстве	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	2A, 2A	Inverting, Non-Inverting	-	7.5ns, 6.5ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-VDFN Exposed Pad	8-DFN-EP (5x4)
IXDF602SIATR	IXYS Integrated Circuits Division	2A 8 SOIC DUAL INV/NON-INVERTING	в производстве	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	2A, 2A	Inverting, Non-Inverting	-	7.5ns, 6.5ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IXDI602D2TR	IXYS Integrated Circuits Division	2A 8 DFN DUAL INVERTING	в производстве	Low-Side	Independent	2	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	2A, 2A	Inverting	-	7.5ns, 6.5ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-VDFN Exposed Pad	8-DFN-EP (5x4)

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