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Diodes Incorporated |
IC GATE DRVR IGBT/MOSFET SOT26 |
в производстве | Low-Side | Single | 1 | IGBT, SiC MOSFET | 40V (Max) | - | 10A, 10A | Non-Inverting | - | 48ns, 35ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23-6 | SOT-26 |
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Diodes Incorporated |
IC GATE DRVR IGBT/MOSFET SOT23-6 |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 40V (Max) | - | 5A, 5A | Non-Inverting | - | 8.9ns, 8.9ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23-6 | SOT-23-6 |
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Diodes Incorporated |
IC GATE DRVR IGBT/MOSFET SOT26 |
в производстве | Low-Side | Single | 1 | IGBT, SiC MOSFET | 40V (Max) | - | 10A, 10A | Non-Inverting | - | 48ns, 35ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23-6 | SOT-26 |
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Diodes Incorporated |
IC SYNCH MOSFET CNTRLR 4A 8SO |
в производстве | High-Side or Low-Side | Single | 1 | N-Channel MOSFET | 5 V ~ 15 V | - | 2.5A, 6A | Non-Inverting | - | 450ns, 21ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
IC GATE DRVR IGBT/MOSFET SOT23-6 |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 20V (Max) | - | 9A, 9A | Non-Inverting | - | 8.3ns, 10.8ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23-6 | SOT-23-6 |
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Diodes Incorporated |
IC GATE DRVR HV SO8 |
в производстве | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 600V | 70ns, 35ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
IC SYNCH MOSFET CNTLR 8SO |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 4.5 V ~ 25 V | - | 4A, 9A | Non-Inverting | - | 77ns, 26ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
SYNCH MOSFET CONTROLLERSO-7TR |
в производстве | High-Side or Low-Side | Single | 1 | N-Channel MOSFET | 4 V ~ 20 V | - | 2A, 5A | - | - | 695ns, 131ns | -50°C ~ 150°C | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width), 7 Leads | 7-SO |
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Diodes Incorporated |
SYNCH MOSFET CONTROLLER SO-7 TR |
в производстве | High-Side or Low-Side | Single | 1 | N-Channel MOSFET | 4 V ~ 20 V | - | 2A, 5A | - | - | 695ns, 131ns | -50°C ~ 150°C | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width), 7 Leads | 7-SO |
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Diodes Incorporated |
IC SYNCH MOSFET CNTLR 8SO |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 40V (Max) | - | 2A, 7A | Non-Inverting | - | 175ns, 20ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
IC GATE DVR HV W-DFN3030-10 |
в производстве | - | - | - | - | - | - | - | - | - | - | - | SMD Поверхностный монтаж | 10-WFDFN Exposed Pad | W-DFN3030-10 |
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Diodes Incorporated |
IC GATE DRVR IGBT/MOSFET SOT23-6 |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 40V (Max) | - | 2A, 2A | Non-Inverting | - | 210ns, 240ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23-6 | SOT-26 |
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Diodes Incorporated |
IC GATE DVR IGBT/MOSFET SOT26 |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 25V (Max) | - | 10A, 10A | Non-Inverting | - | 48ns, 35ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23-6 | SOT-26 |
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Diodes Incorporated |
IC GATE HV DRIVER MSOP-10 |
в производстве | Half-Bridge | Single | 2 | N-Channel MOSFET | 8 V ~ 14 V | 0.8V, 2.4V | 1.5A, 2A | CMOS/TTL | 50V | 17ns, 12ns | -40°C ~ 125°C (TA) | SMD Поверхностный монтаж | 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) | 10-MSOP |
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Diodes Incorporated |
SYNCH MOSFET CONTROLLER SOT23 T |
в производстве | Low-Side | Synchronous | 1 | N-Channel MOSFET | 3.5 V ~ 40 V | - | 1.5A, 3A | - | - | 360ns, 210ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23-6 | SOT-26 |
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Diodes Incorporated |
IC GATE DRVR IGBT/MOSFET SOT23-6 |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 12V (Max) | - | 9A, 9A | Non-Inverting | - | 7.3ns, 11ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23-6 | SOT-23-6 |
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Diodes Incorporated |
HVGATEDRIVERW-DFN3030-10 |
в производстве | - | - | - | - | - | - | - | - | - | - | - | SMD Поверхностный монтаж | 10-WFDFN Exposed Pad | W-DFN3030-10 |
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Diodes Incorporated |
HVGATEDRIVERW-DFN3030-10 |
в производстве | - | - | - | - | - | - | - | - | - | - | - | SMD Поверхностный монтаж | 10-WFDFN Exposed Pad | W-DFN3030-10 |
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Diodes Incorporated |
HVGATEDRIVERW-DFN3030-10 |
в производстве | - | - | - | - | - | - | - | - | - | - | - | SMD Поверхностный монтаж | 10-WFDFN Exposed Pad | W-DFN3030-10 |
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Diodes Incorporated |
IC SYNCH MOSFET CNTLR 8SO |
в производстве | High-Side or Low-Side | Single | 1 | N-Channel MOSFET | 5 V ~ 25 V | - | 2.5A, 7A | Non-Inverting | - | 480ns, 50ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
IC GATE DVR HV 10-WDFN |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 100V | 70ns, 35ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 10-WFDFN Exposed Pad | W-DFN3030-10 |
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Diodes Incorporated |
IC GATE DRVR HALF BRIDGE SO-8 |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 250V | 70ns, 35ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
IC GATE DVR HV 10-WDFN |
в производстве | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 100V | 70ns, 35ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 10-WFDFN Exposed Pad | W-DFN3030-10 |
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Diodes Incorporated |
IC GATE DRVR HALF BRIDGE SO-8 |
в производстве | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 250V | 70ns, 35ns | -40°C ~ 125°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
IC GATE DRVR HV SO8 |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 600V | 70ns, 35ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
IC GATE DRVR HV SO8 |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.7V, 2.3V | 290mA, 600mA | Non-Inverting | 600V | 70ns, 35ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
IC GATE DRVR HALF-BRIDGE 8SO |
устарелый | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 600V | 100ns, 35ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
IC GATE DVR HV W-DFN3030-10 |
в производстве | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 8 V ~ 14 V | 1V, 2.5V | 1.5A, 2.5A | Non-Inverting | 50V | 17ns, 12ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 10-WFDFN Exposed Pad | W-DFN3030-10 |
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Diodes Incorporated |
IC GATE DRVR HALF-BRIDGE 8SO |
устарелый | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 600V | 100ns, 50ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
IC GATE DVR HV W-DFN3030-10 |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8 V ~ 14 V | 1V, 2.5V | 1.5A, 2.5A | Non-Inverting | 50V | 17ns, 13ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 10-WFDFN Exposed Pad | W-DFN3030-10 |
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Diodes Incorporated |
IC GATE DRVR HALF-BRIDGE 8SO |
устарелый | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 210mA, 360mA | Non-Inverting | 600V | 100ns, 50ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
IC GATE DRVR HALF-BRIDGE 8SO |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 600V | 70ns, 35ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
IC GATE DRVR HALF-BRIDGE 8SO |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.6V, 2.5V | 290mA, 600mA | Non-Inverting | 600V | 100ns, 35ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
IC GATE DRVR HALF-BRIDGE 8SO |
в производстве | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 1.9A, 2.3A | Non-Inverting | 600V | 40ns, 20ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
IC OR Controller SRC SELECT 8-SO |
в производстве | High-Side or Low-Side | Single | 1 | P-Channel MOSFET | 4 V ~ 20 V | - | 2A, 5A | - | - | 695ns, 131ns | -50°C ~ 150°C | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
IC GATE DRVR HALF-BRIDGE 8SO |
устарелый | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 600V | 70ns, 35ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
IC GATE DRVR HALF-BRIDGE 8SO |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.6V, 2.5V | 290mA, 600mA | Non-Inverting | 600V | 100ns, 35ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
IC GATE DRVR HALF-BRIDGE 8SO |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 1.9A, 2.3A | Non-Inverting | 600V | 40ns, 20ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
HV GATE DRIVER SO-28 |
в производстве | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.4V | 200mA, 350mA | Inverting | 600V | 90ns, 35ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 28-SOIC (0.295", 7.50mm Width) | 28-SO |
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Diodes Incorporated |
IC GATE DRVR HALF-BRIDGE 16SO |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 6V, 9.5V | 2.5A, 2.5A | Non-Inverting | 500V | 15ns, 13ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 16-SOIC (0.295", 7.50mm Width) | 16-SO |
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Diodes Incorporated |
IC SYNCH MOSFET CNTRLR 4A 8SO |
в производстве | High-Side or Low-Side | Single | 1 | N-Channel MOSFET | 5 V ~ 15 V | - | 2.5A, 2.5A | Non-Inverting | - | 305ns, 20ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
IC GATE DRVR HALF-BRIDGE 8SO |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 4.5A, 4.5A | Non-Inverting | 600V | 25ns, 20ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
IC GATE DRVR HALF-BRIDGE 16SO |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 6V, 9.5V | 2.5A, 2.5A | Non-Inverting | 600V | 15ns, 13ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 16-SOIC (0.295", 7.50mm Width) | 16-SO |
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Diodes Incorporated |
IC GATE DRVR IGBT/MOSFET SOT23-6 |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 40V (Max) | - | 8A, 8A | Non-Inverting | - | 13.4ns, 12.4ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23-6 | SOT-23-6 |
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Diodes Incorporated |
IC GATE DRVR IGBT/MOSFET SOT363 |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 40V (Max) | - | 2A, 2A | Non-Inverting | - | 210ns, 240ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 6-TSSOP, SC-88, SOT-363 | SOT-363 |
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Diodes Incorporated |
IC GATE DRVR HI/LOW SIDE 10DFN |
в производстве | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Diodes Incorporated |
IC GATE DRVR IGBT/MOSFET SOT26 |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 40V (Max) | - | 5A, 5A | Non-Inverting | - | 8.9ns, 8.9ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23-6 | SOT-23-6 |
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Diodes Incorporated |
IC GATE DRVR IGBT/MOSFET SOT26 |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 12V (Max) | - | 9A, 9A | Non-Inverting | - | 7.3ns, 11ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23-6 | SOT-23-6 |
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Diodes Incorporated |
IC GATE DVR HV 8SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 600V | 70ns, 35ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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Diodes Incorporated |
HV GATE DRIVER W-DFN3030-10 TR |
в производстве | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
