|
|
Microchip Technology |
IC MOSFET DRIVER 500MA SOT23-5 |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 500mA, 500mA | Non-Inverting | - | 19ns, 15ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SC-74A, SOT-753 | SOT-23-5 |
|
|
Microchip Technology |
IC MOSFET DVR 1.5A HS SOT23-5 |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 20ns, 20ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SC-74A, SOT-753 | SOT-23-5 |
|
|
Microchip Technology |
IC MOSFET DVR 1.5A HS SOT23-5 |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting | - | 20ns, 20ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SC-74A, SOT-753 | SOT-23-5 |
|
|
Microchip Technology |
IC DRIVER MOSFET 1.5A DUAL 8-MLF |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 20 V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 20ns, 18ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-VDFN Exposed Pad, 8-MLF® | 8-MLF® (3x3) |
|
|
Microchip Technology |
IC MOSFET DRVR 6A NON INV 8-MLF |
в производстве | Low-Side | Single | 1 | P-Channel MOSFET | 4.5 V ~ 13.2 V | 1.607V, 1.615V | 6A, 6A | Non-Inverting | - | 10ns, 10ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-VFDFN Exposed Pad, 8-MLF® | 8-MLF® (2x2) |
|
|
Microchip Technology |
IC MOSFET DRIVER HI VOLT 400V 8S |
в производстве | High-Side | Single | 1 | N-Channel, P-Channel MOSFET | 3.15 V ~ 5.5 V | 0.5V, 3.15V | - | Non-Inverting | 400V | 650µs, 3ms (Max) | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Microchip Technology |
IC MOSFET DVR 1.5A DUAL HS 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 25ns, 25ns | 0°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Microchip Technology |
IC MOSFET DVR 6A 8SOIC |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 6A, 6A | Non-Inverting | - | 20ns, 20ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Microchip Technology |
IC MOSFET DVR 6A 8SOIC |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 6A, 6A | Inverting | - | 20ns, 20ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Microchip Technology |
IC MOSFET DVR 1.5A DUAL HS 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting, Non-Inverting | - | 25ns, 25ns | 0°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Microchip Technology |
IC DRIVER MOSFET HI SIDE SOT143 |
в производстве | High-Side | Single | 1 | N-Channel MOSFET | 2.7 V ~ 9 V | 0.8V, 2.4V | - | Non-Inverting | - | - | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | TO-253-4, TO-253AA | SOT-143 |
|
|
Microchip Technology |
IC MOSFET DRIVER HI VOLT 400V 8S |
в производстве | High-Side | Synchronous | 2 | N-Channel MOSFET | 3.15 V ~ 5.5 V | 0.5V, 3.15V | - | Non-Inverting | 400V | 650µs, 3ms (Max) | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Microchip Technology |
IC DRIVER MOSFET 9A LOSIDE 8SOIC |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 9A, 9A | Non-Inverting | - | 20ns, 24ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Microchip Technology |
IC DRIVER MOSF HI/LO SIDE 8SOIC |
в производстве | High-Side or Low-Side | Single | 1 | N-Channel MOSFET | 2.75 V ~ 30 V | 0.8V, 2V | - | Non-Inverting | - | - | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Microchip Technology |
IC MOSFET DRIVER HIGH/LOW 8SOIC |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 5.5 V | - | 2A, 2A | Non-Inverting | 36V | 10ns, 10ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Microchip Technology |
IC MOSFET DVR 9A NON-INV 8SOIC |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 10A, 10A | Non-Inverting | - | 38ns, 33ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Microchip Technology |
IC MOSFET DVR 12A HS 8SOIC |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 13A, 13A | Inverting | - | 30ns, 32ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Microchip Technology |
IC DRIVER MOSF HI/LOW SIDE 8SOIC |
в производстве | High-Side or Low-Side | Single | 1 | N-Channel MOSFET | 2.75 V ~ 30 V | 0.8V, 2V | - | Non-Inverting | - | - | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Microchip Technology |
IC MOSFET DVR AND/INV 16SOIC |
в производстве | Low-Side | Independent | 4 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.2A, 1.2A | Inverting, Non-Inverting | - | 15ns, 15ns | 0°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
|
|
Microchip Technology |
IC MOSFET DVR 1.5A SINGLE SOT-23 |
в производстве | High-Side or Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 1.5A, 1.5A | Non-Inverting | - | 11.5ns, 10ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23-6 | SOT-23-6 |
|
|
Microchip Technology |
IC DRIVER MOSF LOW SIDE SOT143-4 |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.2A, 1.2A | Inverting | - | 14ns, 16ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | TO-253-4, TO-253AA | SOT-143 |
|
|
Microchip Technology |
IC DVR MOSFET LOW SIDE 4TQFN |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 3V | 1.5A, 1.5A | Non-Inverting | - | 12ns, 12ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 4-UQFN | 4-TQFN (1.2x1.2) |
|
|
Microchip Technology |
IC DRIVER MOSFET 1.5A DUAL 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting, Non-Inverting | - | 20ns, 29ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Microchip Technology |
IC DRIVER MOSFET 1.5A DUAL 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting | - | 20ns, 29ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Microchip Technology |
IC DRIVER MOSFET 1.5A DUAL 8MSOP |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 20ns, 29ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-MSOP |
|
|
Microchip Technology |
IC DRIVER MOSFET 1.5A DUAL 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 20 V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 20ns, 18ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
|
|
Microchip Technology |
IC DRIVER MOSFET DUAL 1.5A 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting | - | 20ns, 29ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Microchip Technology |
IC DRIVER MOSFET DUAL 1.5A 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 20ns, 29ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Microchip Technology |
IC MOSFET DVR 1.5A DUAL HS 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 25ns, 25ns | 0°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Microchip Technology |
IC MOSFET DVR 1.5A DUAL HS 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting, Non-Inverting | - | 25ns, 25ns | 0°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Microchip Technology |
IC DRIVER MOSFET 6A LOSIDE 8SOIC |
в производстве | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 6A, 6A | Non-Inverting | - | 12ns, 13ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Microchip Technology |
IC DRIVER MOSFET 1.5A DUAL 8-DIP |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting, Non-Inverting | - | 20ns, 29ns | 0°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
Microchip Technology |
IC MOSFET DVR 1.5A DUAL HS 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting, Non-Inverting | - | 19ns, 19ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Microchip Technology |
IC MOSFET DVR 1.5A DUAL HS 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting | - | 19ns, 19ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Microchip Technology |
IC MOSFET DVR 1.5A DUAL HS 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 25ns, 25ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Microchip Technology |
IC MOSFET DRVR DUAL INVERT 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 20 V | 0.8V, 2.4V | 3A, 3A | Inverting | - | 11ns, 11ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC |
|
|
Microchip Technology |
IC DRIVER MOSFET 3A DUAL 8-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 3A, 3A | Inverting | - | 28ns, 32ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Microchip Technology |
IC MOSFET DRIVER 6A HS 8SOIC |
в производстве | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 6A, 6A | Non-Inverting | - | 25ns, 25ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Microchip Technology |
IC MOSFET DRIVER 6A HS 8SOIC |
в производстве | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 6A, 6A | Non-Inverting | - | 25ns, 25ns | 0°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Microchip Technology |
IC MOSFET DRIVER 6A HS 8DIP |
в производстве | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 6A, 6A | Non-Inverting | - | 25ns, 25ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
Microchip Technology |
IC MOSFET DVR 3A DUAL HS 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 4.5A, 4.5A | Non-Inverting | - | 12ns, 12ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Microchip Technology |
IC MOSFET DVR 3A DUAL HS 8DIP |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 4.5A, 4.5A | Inverting | - | 12ns, 12ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
Microchip Technology |
IC DRIVER MOSFET 3A DUAL 8DIP |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 3A, 3A | Non-Inverting | - | 28ns, 32ns | 0°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
Microchip Technology |
IC DRIVER MOSFET 9A LOSIDE 8SOIC |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 9A, 9A | Inverting | - | 20ns, 24ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Microchip Technology |
IC MOSFET DVR 4.5A DUAL 8SOIC |
в производстве | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 4.5A, 4.5A | Inverting | - | 15ns, 18ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Microchip Technology |
IC MOSFET DVR 4.5A DUAL 8SOIC |
в производстве | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 4.5A, 4.5A | Non-Inverting | - | 15ns, 18ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Microchip Technology |
IC MOSFET DRIVER 9A INV 8SOIC |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 10A, 10A | Inverting | - | 38ns, 33ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Microchip Technology |
IC MOSFET DVR 9A NON-INV 8DIP |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 10A, 10A | Non-Inverting | - | 38ns, 33ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
Microchip Technology |
IC MOSFET DRIVER 9A INV 8DIP |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 10A, 10A | Inverting | - | 38ns, 33ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
Microchip Technology |
IC DRIVER MOSFET 100V TTL 8SOIC |
в производстве | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 9 V ~ 16 V | 0.8V, 2.2V | 2A, 3A | Non-Inverting | 118V | 330ns, 200ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
