|
|
Maxim Integrated |
IC DVR MOSFET HI-SIDE NCH 8-UMAX |
в производстве | High-Side | Single | 1 | N-Channel MOSFET | 5 V ~ 26 V | 0.6V, 2V | - | Non-Inverting | - | - | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-uMAX |
|
|
Maxim Integrated |
IC DRIVER MOSFET DUAL 8-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 2A, 2A | Inverting | - | 25ns, 20ns | 0°C ~ 70°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Maxim Integrated |
IC DVR MOSFET DUAL NON-INV 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 2A, 2A | Non-Inverting | - | 25ns, 20ns | 0°C ~ 70°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Maxim Integrated |
IC DVR MOSFET HI-SIDE NCH 8-UMAX |
в производстве | High-Side | Single | 1 | N-Channel MOSFET | 5 V ~ 26 V | 0.6V, 2V | - | Non-Inverting | - | - | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-uMAX |
|
|
Maxim Integrated |
IC DRVR FET P-P 8-UMAX |
в производстве | Low-Side | Synchronous | 2 | N-Channel MOSFET | 4.5 V ~ 15 V | - | 3A, 3A | RC Input Circuit | - | 10ns, 10ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-uMax-EP |
|
|
Maxim Integrated |
IC MOSFET DRIVER 12-TQFN |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8 V ~ 12.6 V | 0.8V, 2V | 2A, 2A | Inverting, Non-Inverting | 125V | 65ns, 65ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 12-WQFN Exposed Pad | 12-TQFN (4x4) |
|
|
Maxim Integrated |
IC MOSFET DRVR 4A DUAL 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4 V ~ 14 V | 0.8V, 2.1V | 4A, 4A | Non-Inverting | - | 40ns, 25ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Maxim Integrated |
IC MOSFET DRV DUAL NONINV 8-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 20ns, 20ns | 0°C ~ 70°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Maxim Integrated |
IC DRIVER MOSFET DUAL POWER 8-DIP |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 17 V | 0.8V, 2V | - | Inverting | - | 20ns, 20ns | 0°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
Maxim Integrated |
IC MOSFET DRV DUAL NONINV 8-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 20ns, 20ns | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Maxim Integrated |
IC MOSFET DRVR DUAL NONINV 8-DIP |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 20ns, 20ns | 0°C ~ 70°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
Maxim Integrated |
IC DRIVER MOSFET SNGL 6A HS 8DIP |
в производстве | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 6A, 6A | Non-Inverting | - | 25ns, 25ns | 0°C ~ 70°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
Maxim Integrated |
IC MOSFET DRVR SGL 6A HS 8-DIP |
в производстве | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 6A, 6A | Non-Inverting | - | 25ns, 25ns | -40°C ~ 85°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
Maxim Integrated |
IC DRIVER MOSFET DUAL 8-DIP |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 2A, 2A | Inverting | - | 25ns, 20ns | 0°C ~ 70°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
Maxim Integrated |
IC MOSF DRVR HALF BRDG HS 8-SOIC |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8 V ~ 12.6 V | 0.8V, 2V | 3A, 3A | Inverting, Non-Inverting | 125V | 50ns, 40ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
|
|
Maxim Integrated |
IC DRIVER MOSFET 6A HS 8-SOIC |
в производстве | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 6A, 6A | Non-Inverting | - | 25ns, 25ns | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Maxim Integrated |
IC DRIVER MOSFET 8-SOIC |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8 V ~ 12.6 V | 0.8V, 2V | 2A, 2A | Non-Inverting | 175V | 65ns, 65ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Maxim Integrated |
IC MOSFET DVR NOTEBOOK |
в производстве | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.2 V ~ 5.5 V | - | 2A, 2.7A | Non-Inverting | 24V | 10ns, 8ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-WQFN Exposed Pad | 8-TQFN (3x3) |
|
|
Maxim Integrated |
IC MOSFET DRVR INV/NONINV 8-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting, Non-Inverting | - | 20ns, 20ns | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Maxim Integrated |
IC DRIVER MOSFET DUAL 8-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 2A, 2A | Inverting | - | 25ns, 20ns | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Maxim Integrated |
IC DRIVER MOSFET DUAL 8-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 2A, 2A | Non-Inverting | - | 25ns, 20ns | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Maxim Integrated |
IC DRVR MOSFET DUAL 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 1.5A, 1.5A | Non-Inverting | - | 25ns, 25ns | 0°C ~ 70°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Maxim Integrated |
IC DRVR MOSFET DUAL 8-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 1.5A, 1.5A | Inverting, Non-Inverting | - | 25ns, 25ns | 0°C ~ 70°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Maxim Integrated |
IC MOSFET DRVR DUAL NONINV 8-DIP |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 20ns, 20ns | -40°C ~ 85°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
Maxim Integrated |
IC DRIVER MOSFET SNGL 6A HS 8DIP |
в производстве | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 6A, 6A | Inverting | - | 25ns, 25ns | 0°C ~ 70°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
Maxim Integrated |
IC MOSFET DRV SGL 6A HS 8-SOIC |
в производстве | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 6A, 6A | Inverting | - | 25ns, 25ns | 0°C ~ 70°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Maxim Integrated |
IC MOSFET DRVR SGL 6A HS 8-SOIC |
в производстве | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 6A, 6A | Non-Inverting | - | 25ns, 25ns | 0°C ~ 70°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Maxim Integrated |
IC MOSFET DRIVER 6-TDFN |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 4 V ~ 12.6 V | - | 1.3A, 7.6A | Inverting, Non-Inverting | - | 82ns, 12.5ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 6-WDFN Exposed Pad | 6-TDFN-EP (3x3) |
|
|
Maxim Integrated |
IC MOSF DRVR HALF BRDG HS 8-SOIC |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8 V ~ 12.6 V | 0.8V, 2V | 3A, 3A | Non-Inverting | 125V | 50ns, 40ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
|
|
Maxim Integrated |
IC MOSFET DRVR DUAL 8-SOIC |
устарелый | Low-Side | Independent | 2 | N-Channel MOSFET | 4 V ~ 15 V | 0.8V, 2.1V | 4A, 4A | Non-Inverting | - | 32ns, 26ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
|
|
Maxim Integrated |
IC DRIVER MOSFET 8-SOIC |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8 V ~ 12.6 V | 0.8V, 2V | 2A, 2A | Inverting, Non-Inverting | 175V | 65ns, 65ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Maxim Integrated |
IC DRIVER MOSFET 8-SOIC |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8 V ~ 12.6 V | - | 2A, 2A | Non-Inverting | 175V | 65ns, 65ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Maxim Integrated |
IC MOSFET DRVR DUAL 8-SOIC |
устарелый | Low-Side | Independent | 2 | N-Channel MOSFET | 4 V ~ 15 V | 0.8V, 2.1V | 4A, 4A | Non-Inverting | - | 32ns, 26ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Maxim Integrated |
IC MOSFET DRVR DUAL 8-SOIC |
устарелый | Low-Side | Independent | 2 | N-Channel MOSFET | 4 V ~ 15 V | 0.8V, 2.1V | 4A, 4A | Inverting, Non-Inverting | - | 32ns, 26ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Maxim Integrated |
IC DRVR MOSFET QUAD 18-SOIC |
в производстве | High-Side | Independent | 4 | N-Channel MOSFET | 4.5 V ~ 16.5 V | 0.8V, 2.4V | - | Non-Inverting | - | 1.7µs, 2.5µs | 0°C ~ 70°C (TA) | SMD Поверхностный монтаж | 18-SOIC (0.295", 7.50mm Width) | 18-SOIC |
|
|
Maxim Integrated |
IC MOSFET DRIVER 8-SOIC |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8 V ~ 12.6 V | 0.8V, 2V | 2A, 2A | Inverting, Non-Inverting | 125V | 65ns, 65ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
|
|
Maxim Integrated |
IC MOSFET DRVR 4A DUAL 8TDFN |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4 V ~ 14 V | 2V, 4.25V | 4A, 4A | Inverting | - | 40ns, 25ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-WDFN Exposed Pad | 8-TDFN-EP (3x3) |
|
|
Maxim Integrated |
IC MOSFET DRVR 4A DUAL 8TDFN |
в производстве | Low-Side | Independent | 2 | IGBT, SiC MOSFET | 4 V ~ 14 V | 2V, 4.25V | 4A, 4A | Inverting, Non-Inverting | - | 40ns, 25ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-WDFN Exposed Pad | 8-TDFN-EP (3x3) |
|
|
Maxim Integrated |
IC MOSFET DRIVER 8-SOIC |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8 V ~ 12.6 V | - | 2A, 2A | Non-Inverting | 125V | 65ns, 65ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Maxim Integrated |
IC MOSFET DVR DUAL POWER 8-SOIC |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 17 V | 0.8V, 2V | - | Inverting | - | 20ns, 20ns | 0°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Maxim Integrated |
IC MOSFET DRVR INV/NONINV 8-DIP |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting, Non-Inverting | - | 20ns, 20ns | 0°C ~ 70°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
Maxim Integrated |
IC MOSFET DRV SGL 6A HS 8-DIP |
в производстве | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 6A, 6A | Inverting | - | 25ns, 25ns | -40°C ~ 85°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
Maxim Integrated |
IC HALF-BRIDGE MOSFET DVR 8-SOIC |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8 V ~ 12.6 V | - | 2A, 2A | Inverting, Non-Inverting | 175V | 65ns, 65ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
|
|
Maxim Integrated |
IC MOSFET DRIVER 12-TQFN |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8 V ~ 12.6 V | - | 2A, 2A | Inverting, Non-Inverting | 125V | 65ns, 65ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 12-WQFN Exposed Pad | 12-TQFN (4x4) |
|
|
Maxim Integrated |
IC DRVR FET P-P 14-TSSOP |
устарелый | Low-Side | Synchronous | 2 | N-Channel MOSFET | 4.5 V ~ 15 V | - | 3A, 3A | RC Input Circuit | - | 10ns, 10ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 14-TSSOP (0.173", 4.40mm Width) Exposed Pad | 14-TSSOP-EP |
|
|
Maxim Integrated |
IC MOSFET DRIVER 8-SOIC |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8 V ~ 12.6 V | - | 2A, 2A | Non-Inverting | 125V | 65ns, 65ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
|
|
Maxim Integrated |
IC MOSFET DRIVER 8-SOIC |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8 V ~ 12.6 V | - | 2A, 2A | Inverting, Non-Inverting | 125V | 65ns, 65ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Maxim Integrated |
IC MOSFET DRVR 4A DUAL 8TDFN |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4 V ~ 14 V | 0.8V, 2.1V | 4A, 4A | Inverting, Non-Inverting | - | 40ns, 25ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-WDFN Exposed Pad | 8-TDFN (3x3) |
|
|
Maxim Integrated |
IC MOSFET DRIVER HS SOT23 |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 4 V ~ 14 V | 0.8V, 2V | 3A, 7A | Inverting, Non-Inverting | - | 28ns, 13ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23-6 | SOT-23-6 |
|
|
Maxim Integrated |
IC MOSFET DRVR 4A DUAL 8TDFN |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4 V ~ 14 V | 0.8V, 2.1V | 4A, 4A | Non-Inverting | - | 40ns, 25ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-WDFN Exposed Pad | 8-TDFN (3x3) |
