IXYS Integrated Circuits Division агент по продажам - PMIC - драйверы Gate - IXDN609CI IXDN609YI - ICCHIP

номер части	Производитель / Марка	Краткое описание	Статус детали	Управляемая конфигурация	Тип канала	Количество драйверов	Тип ворот	Напряжение - Поставка	Напряжение логики - VIL, VIH	Текущий - пиковый выход (источник, раковина)	Тип ввода	Высокое боковое напряжение - макс (бутстрап)	Время нарастания / падения (Тип)	Рабочая Температура	Тип монтажа	Упаковка / чехол	Пакет устройств поставщика
IXDN609CI	IXYS Integrated Circuits Division	IC GATE DVR 9A NON-INV TO220-5	в производстве	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	9A, 9A	Non-Inverting	-	22ns, 15ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-5 Formed Leads	TO-220-5
IXDN609YI	IXYS Integrated Circuits Division	IC GATE DVR 9A NON-INV TO263-5	в производстве	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	9A, 9A	Non-Inverting	-	22ns, 15ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	TO-263-6, D²Pak (5 Leads + Tab), TO-263BA	TO-263-5
IXDD614SITR	IXYS Integrated Circuits Division	14A 8SOIC EXP MTL NON INV W/ENAB	в производстве	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	14A, 14A	Non-Inverting	-	25ns, 18ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
IXDI614SITR	IXYS Integrated Circuits Division	14A 8LEAD SOIC EXP MTL INVERTING	в производстве	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	14A, 14A	Inverting	-	25ns, 18ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
IXDN614SITR	IXYS Integrated Circuits Division	14A 8SOIC EXP MTL NON INVERTING	в производстве	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	14A, 14A	Non-Inverting	-	25ns, 18ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
IXDD614SI	IXYS Integrated Circuits Division	14A 8SOIC EXP MTL NON INV W/ENAB	в производстве	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	14A, 14A	Non-Inverting	-	25ns, 18ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
IXDI614SI	IXYS Integrated Circuits Division	14A 8LEAD SOIC EXP MTL INVERTING	в производстве	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	14A, 14A	Inverting	-	25ns, 18ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
IXDN614SI	IXYS Integrated Circuits Division	14A 8SOIC EXP MTL NON INVERTING	в производстве	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	14A, 14A	Non-Inverting	-	25ns, 18ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
IXDI614CI	IXYS Integrated Circuits Division	14A 5 PIN TO-220 INVERTING	в производстве	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	14A, 14A	Inverting	-	25ns, 18ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-5 Formed Leads	TO-220-5
IXDI614YI	IXYS Integrated Circuits Division	14A 5 LEAD TO-263 INVERTING	в производстве	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	14A, 14A	Inverting	-	25ns, 18ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	TO-263-6, D²Pak (5 Leads + Tab), TO-263BA	TO-263-5
IXDN614CI	IXYS Integrated Circuits Division	14A 5PIN TO-220 NON INVERTING	в производстве	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	14A, 14A	Non-Inverting	-	25ns, 18ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-5 Formed Leads	TO-220-5
IXDN614YI	IXYS Integrated Circuits Division	14A 5LEAD TO-263 NON INVERTING	в производстве	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	14A, 14A	Non-Inverting	-	25ns, 18ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	TO-263-6, D²Pak (5 Leads + Tab), TO-263BA	TO-263-5
IXDI630CI	IXYS Integrated Circuits Division	IC GATE DRIVER LOW SIDE 5TO220	в производстве	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	12.5 V ~ 35 V	0.8V, 3.5V	30A, 30A	Inverting	-	11ns, 11ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-5	TO-220-5
IXDD630CI	IXYS Integrated Circuits Division	IC GATE DRIVER LOW SIDE 5TO220	в производстве	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	12.5 V ~ 35 V	0.8V, 3.5V	30A, 30A	Non-Inverting	-	11ns, 11ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-5	TO-220-5
IXDD630MCI	IXYS Integrated Circuits Division	IC GATE DRIVER LOW SIDE 5TO220	в производстве	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	9 V ~ 35 V	0.8V, 3.5V	30A, 30A	Non-Inverting	-	11ns, 11ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-5	TO-220-5
IXDI630MCI	IXYS Integrated Circuits Division	IC GATE DRIVER LOW SIDE 5TO220	в производстве	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	9 V ~ 35 V	0.8V, 3.5V	30A, 30A	Inverting	-	11ns, 11ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-5	TO-220-5
IXDI630YI	IXYS Integrated Circuits Division	IC GATE DRIVER LOW SIDE 5TO263	в производстве	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	12.5 V ~ 35 V	0.8V, 3.5V	30A, 30A	Inverting	-	11ns, 11ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	TO-263-6, D²Pak (5 Leads + Tab), TO-263BA	TO-263-5
IXDI630MYI	IXYS Integrated Circuits Division	IC GATE DRIVER LOW SIDE 5TO263	в производстве	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	9 V ~ 35 V	0.8V, 3.5V	30A, 30A	Inverting	-	11ns, 11ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	TO-263-6, D²Pak (5 Leads + Tab), TO-263BA	TO-263-5
IXDN630MCI	IXYS Integrated Circuits Division	IC GATE DRIVER LOW SIDE 5TO220	в производстве	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	9 V ~ 35 V	0.8V, 3.5V	30A, 30A	Non-Inverting	-	11ns, 11ns	-55°C ~ 150°C (TJ)	Through Hole	TO-220-5	TO-220-5
IXDN630MYI	IXYS Integrated Circuits Division	IC GATE DRIVER LOW SIDE 5TO263	в производстве	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	9 V ~ 35 V	0.8V, 3.5V	30A, 30A	Non-Inverting	-	11ns, 11ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	TO-263-6, D²Pak (5 Leads + Tab), TO-263BA	TO-263-5
IXDD614D2TR	IXYS Integrated Circuits Division	14A 5LEAD TO-263 NON INVERTING	устарелый	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3V	14A, 14A	Non-Inverting	-	25ns, 18ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	TO-263-6, D²Pak (5 Leads + Tab), TO-263BA	TO-263 (D²Pak)
IX2204NE	IXYS Integrated Circuits Division	IC IGBT GATE DVR DUAL 16SOIC	устарелый	Low-Side	Independent	2	IGBT	-10 V ~ 25 V	0.8V, 2V	2A, 4A	Non-Inverting	-	-, 8ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	16-SOIC (0.154", 3.90mm Width)	16-SOIC
IX2204NETR	IXYS Integrated Circuits Division	IC IGBT GATE DVR DUAL 16SOIC	устарелый	Low-Side	Independent	2	IGBT	-10 V ~ 25 V	0.8V, 2V	2A, 4A	Non-Inverting	-	-, 8ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	16-SOIC (0.154", 3.90mm Width)	16-SOIC
IXDN604WW	IXYS Integrated Circuits Division	4 AMP GATE DRIVER FOR WHOLE WAF	устарелый	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IX4340NETR	IXYS Integrated Circuits Division	5-AMP DUAL LOW-SIDE MOSFET DRIVE	устарелый	Low-Side	Independent	2	N-Channel, P-Channel MOSFET	5 V ~ 20 V	0.8V, 2.5V	5A, 5A	Non-Inverting	-	7ns, 7ns	-55°C ~ 150°C (TJ)	SMD Поверхностный монтаж	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC

Производители для PMIC - драйверы Gate