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Maxim Integrated |
IC MOSFET DRVR 4A DUAL 8TDFN |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4 V ~ 14 V | 0.8V, 2.1V | 4A, 4A | Inverting | - | 40ns, 25ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-WDFN Exposed Pad | 8-TDFN-EP (3x3) |
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Maxim Integrated |
IC HALF-BRIDGE TDFN-8 |
в производстве | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.2 V ~ 5.5 V | - | 2.2A, 2.7A | Non-Inverting | 30V | 14ns, 7ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-WFDFN Exposed Pad | 8-TDFN-EP (2x2) |
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Maxim Integrated |
IC MOSFET DVR NOTEBOOK |
в производстве | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.2 V ~ 5.5 V | - | 2A, 2.7A | Non-Inverting | 24V | 10ns, 8ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-WQFN Exposed Pad | 8-TQFN (3x3) |
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Maxim Integrated |
IC DRIVER MOSFET DUAL 8-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 2A, 2A | Inverting | - | 25ns, 20ns | 0°C ~ 70°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Maxim Integrated |
IC MOSFET DRIVER 6-TDFN |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 4 V ~ 12.6 V | 0.8V, 2.4V | 1.3A, 7.6A | Inverting, Non-Inverting | - | 82ns, 12.5ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 6-WDFN Exposed Pad | 6-TDFN-EP (3x3) |
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Maxim Integrated |
IC MOSFET DVR HIGH SPEED SOT23-6 |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 4 V ~ 12.6 V | 0.8V, 2.4V | 1.3A, 7.6A | Inverting, Non-Inverting | - | 82ns, 12.5ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23-6 | SOT-23-6 |
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Maxim Integrated |
IC GATE DRVR 2CH 16NS 10TDFN |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 28 V | 0.8V, 2V | 2A, 4A | Non-Inverting | - | 42ns, 30ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 10-WFDFN Exposed Pad | 10-TDFN (3x3) |
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Maxim Integrated |
IC MOSFET DRVR DUAL 8-TDFN |
устарелый | Low-Side | Independent | 2 | N-Channel MOSFET | 4 V ~ 15 V | 0.8V, 2.1V | 4A, 4A | Inverting, Non-Inverting | - | 32ns, 26ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-WDFN Exposed Pad | 8-TDFN-EP (3x3) |
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Maxim Integrated |
IC MOSFET DRIVER 6-TDFN |
устарелый | Low-Side | Single | 1 | N-Channel MOSFET | 4 V ~ 15 V | 0.8V, 2.1V | 4A, 4A | Inverting, Non-Inverting | - | 32ns, 26ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 6-WDFN Exposed Pad | 6-TDFN-EP (3x3) |
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Maxim Integrated |
IC MOSFET DRVR COTS |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 2A, 2A | Inverting, Non-Inverting | - | 25ns, 20ns | -55°C ~ 125°C (TA) | Through Hole | 8-CDIP (0.300", 7.62mm) | 8-CERDIP |
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Maxim Integrated |
IC MOSFET DRVR DUAL INV 8-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting | - | 20ns, 20ns | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Maxim Integrated |
IC MOSFET DRVR 4A DUAL 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4 V ~ 14 V | 0.8V, 2.1V | 4A, 4A | Inverting | - | 40ns, 25ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Maxim Integrated |
IC MOSFET DRVR 4A DUAL 8UMAX |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4 V ~ 14 V | 0.8V, 2.1V | 4A, 4A | Non-Inverting | - | 40ns, 25ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-uMax-EP |
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Maxim Integrated |
IC MOSFET DVR DUAL POWER 8-SOIC |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 17 V | 0.8V, 2V | - | Inverting | - | 20ns, 20ns | 0°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Maxim Integrated |
IC MOSF DRVR HALF BRDG HS 8-SOIC |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8 V ~ 12.6 V | - | 3A, 3A | Non-Inverting | 125V | 50ns, 40ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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Maxim Integrated |
IC DRIVER MOSFET DUAL 8-DIP |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 1.5A, 1.5A | Inverting | - | 25ns, 25ns | 0°C ~ 70°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Maxim Integrated |
IC DRVR MOSFET QUAD 18-DIP |
в производстве | High-Side | Independent | 4 | N-Channel MOSFET | 4.5 V ~ 16.5 V | 0.8V, 2.4V | - | Non-Inverting | - | 1.7µs, 2.5µs | 0°C ~ 70°C (TA) | Through Hole | 18-DIP (0.300", 7.62mm) | 18-PDIP |
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Maxim Integrated |
IC HALF-BRIDGE MOSFET DVR 8-SOIC |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8 V ~ 12.6 V | 0.8V, 2V | 2A, 2A | Non-Inverting | 175V | 65ns, 65ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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Maxim Integrated |
IC MOSFET DRVR 4A DUAL 8TDFN |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4 V ~ 14 V | 2V, 4.25V | 4A, 4A | Non-Inverting | - | 40ns, 25ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-WDFN Exposed Pad | 8-TDFN-EP (3x3) |
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Maxim Integrated |
IC MOSFET DRVR 4A DUAL 8UMAX |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4 V ~ 14 V | 2V, 4.25V | 4A, 4A | Inverting | - | 40ns, 25ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-uMax-EP |
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Maxim Integrated |
IC MOSFET DRVR 4A DUAL 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4 V ~ 14 V | 0.8V, 2.1V | 4A, 4A | Inverting, Non-Inverting | - | 40ns, 25ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Maxim Integrated |
IC MOSFET DRVR 4A DUAL 8UMAX |
в производстве | Low-Side | Independent | 2 | IGBT, SiC MOSFET | 4 V ~ 14 V | 2V, 4.25V | 4A, 4A | Inverting, Non-Inverting | - | 40ns, 25ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-uMax-EP |
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Maxim Integrated |
IC MOSFET DRVR 4A DUAL 8SOIC |
в производстве | Low-Side | Independent | 2 | IGBT, SiC MOSFET | 4 V ~ 14 V | 2V, 4.25V | 4A, 4A | Inverting, Non-Inverting | - | 40ns, 25ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Maxim Integrated |
IC MOSFET DRVR 4A DUAL 8UMAX |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4 V ~ 14 V | 2V, 4.25V | 4A, 4A | Non-Inverting | - | 40ns, 25ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-uMax-EP |
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Maxim Integrated |
IC MOSFET DRVR 4A DUAL 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4 V ~ 14 V | 2V, 4.25V | 4A, 4A | Non-Inverting | - | 40ns, 25ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Maxim Integrated |
IC MOSFET DVR DUAL POWER 8-DIP |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 17 V | 0.8V, 2V | - | Inverting | - | 20ns, 20ns | 0°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Maxim Integrated |
IC DRIVER MOSFET HS 10-UMAX |
в производстве | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.5 V ~ 6.5 V | 0.8V, 2.5V | - | Non-Inverting | - | 14ns, 9ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) | 10-uMAX |
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Maxim Integrated |
IC DRVR MOSFET DUAL 8-DIP |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 1.5A, 1.5A | Non-Inverting | - | 25ns, 25ns | 0°C ~ 70°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Maxim Integrated |
IC DRIVER MOSFET DUAL 8-DIP |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 2A, 2A | Inverting, Non-Inverting | - | 25ns, 20ns | 0°C ~ 70°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Maxim Integrated |
IC DRVR DL PHASE HS 16-QSOP |
в производстве | Half-Bridge | Synchronous | 4 | N-Channel MOSFET | 4.5 V ~ 7 V | 0.8V, 2.6V | 6A, 6A | Non-Inverting | 30V | 14ns, 9ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 16-SSOP (0.154", 3.90mm Width) | 16-QSOP |
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Maxim Integrated |
IC DRVR MOSFET DUAL 20-TQFN |
в производстве | Half-Bridge | Synchronous | 4 | N-Channel MOSFET | 4.5 V ~ 28 V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 16ns, 14ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 20-WFQFN Exposed Pad | 20-TQFN (4x4) |
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Maxim Integrated |
IC MOSFET DRVR DUAL 8-SOIC |
устарелый | Low-Side | Independent | 2 | N-Channel MOSFET | 4 V ~ 15 V | 0.8V, 2.1V | 4A, 4A | Inverting | - | 32ns, 26ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Maxim Integrated |
IC DRIVER HALF BRDG HS 8-SOIC |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8 V ~ 12.6 V | 0.8V, 2V | 2A, 2A | Non-Inverting | 125V | 65ns, 65ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Maxim Integrated |
IC GAN HI FREQ DRIVER 60V 15WLP |
в производстве | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.5 V ~ 5.5 V | 0.4V, 1.6V | 1A, 5A | TTL | 60V | 5ns, 1ns | -40°C ~ 85°C | SMD Поверхностный монтаж | 15-WFBGA, WLBGA | 15-WLP (1.22x2.05) |
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Maxim Integrated |
IC MOSFET DRVR COTS |
в производстве | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 6A, 6A | Non-Inverting | - | 25ns, 25ns | -55°C ~ 125°C (TA) | Through Hole | 8-CDIP (0.300", 7.62mm) | 8-CDIP |
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Maxim Integrated |
IC MOSFET DRVR COTS |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting, Non-Inverting | - | 20ns, 20ns | -55°C ~ 125°C (TA) | Through Hole | 8-CDIP (0.300", 7.62mm) | 8-CERDIP |
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Maxim Integrated |
IC MOSFET DRVR COTS |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 2A, 2A | Non-Inverting | - | 25ns, 20ns | -55°C ~ 125°C (TA) | Through Hole | 8-CDIP (0.300", 7.62mm) | 8-CERDIP |
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Maxim Integrated |
IC MOSFET DRVR COTS |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting | - | 20ns, 20ns | -55°C ~ 125°C (TA) | Through Hole | 8-CDIP (0.300", 7.62mm) | 8-CERDIP |
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Maxim Integrated |
IC DRIVER MOSFET COTS |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 1.5A, 1.5A | Inverting | - | 25ns, 25ns | -55°C ~ 125°C (TA) | Through Hole | 8-CDIP (0.300", 7.62mm) | 8-CERDIP |
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Maxim Integrated |
IC DRIVER MOSFET COTS |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 1.5A, 1.5A | Inverting, Non-Inverting | - | 25ns, 25ns | -55°C ~ 125°C (TA) | Through Hole | 8-CDIP (0.300", 7.62mm) | 8-CERDIP |
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Maxim Integrated |
IC DRIVER MOSFET DUAL 8-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 2A, 2A | Inverting, Non-Inverting | - | 25ns, 20ns | 0°C ~ 70°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Maxim Integrated |
IC GATE DRVR 1CH 16NS 10TDFN |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 4.5 V ~ 28 V | 0.8V, 2V | 4A, 8A | Inverting, Non-Inverting | - | 22ns, 16ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 10-WFDFN Exposed Pad | 10-TDFN-EP (3x3) |
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Maxim Integrated |
IC MOSFET DRVR TTL SOT23-6 |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 4 V ~ 14 V | 0.8V, 2V | 3A, 7A | Inverting, Non-Inverting | - | 25ns, 14ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23-6 | SOT-23-6 |
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Maxim Integrated |
IC MOSFET DRVR 4A DUAL 8UMAX |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4 V ~ 14 V | 0.8V, 2.1V | 4A, 4A | Inverting | - | 40ns, 25ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-uMax-EP |
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Maxim Integrated |
IC MOSFET DRVR DUAL 8-DIP |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting, Non-Inverting | - | 20ns, 20ns | -40°C ~ 85°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Maxim Integrated |
IC DRIVER MOSFET DUAL 8-DIP |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 2A, 2A | Non-Inverting | - | 25ns, 20ns | 0°C ~ 70°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Maxim Integrated |
IC MOSFET DRVR 4A DUAL 8UMAX |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4 V ~ 14 V | 0.8V, 2.1V | 4A, 4A | Inverting, Non-Inverting | - | 40ns, 25ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-uMax-EP |
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Maxim Integrated |
IC MOSFET DRVR DUAL INV 8-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting | - | 20ns, 20ns | 0°C ~ 70°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Maxim Integrated |
IC MOSF DRVR HALF BRDG HS 8-SOIC |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8 V ~ 12.6 V | - | 3A, 3A | Inverting, Non-Inverting | 125V | 50ns, 40ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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Maxim Integrated |
IC HALF-BRIDGE MOSFET DVR 8-SOIC |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 8 V ~ 12.6 V | 0.8V, 2V | 2A, 2A | Inverting, Non-Inverting | 175V | 65ns, 65ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
