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Производители для Диоды - выпрямители - одиночные

AVX Corporation
Bourns
Central Semiconductor
Comchip Technology
Sensata Technologies – Crydom
Diodes Incorporated
GeneSiC Semiconductor
Global Power Technologies Group, Inc.
Infineon Technologies
IXYS Corporation
Littelfuse
MACOM Technology Solutions
Micro Commercial Components (MCC)
Microsemi
Nexperia
NXP Semiconductors
ON Semiconductor
Panasonic
Phoenix Contact
Power Integrations
Powerex, Inc.
Renesas Electronics America
ROHM Semiconductor
Sanken Electric Co., Ltd.
Semtech
SMC Diode Solutions
Esterline Connection Technologies
STMicroelectronics
Taiwan Semiconductor
Texas Instruments
Torex Semiconductor
Toshiba Semiconductor and Storage
TT Electronics/Optek Technology
Vishay
WeEn Semiconductors Co., Ltd
Wolfspeed
номер части Производитель / Марка Краткое описание Статус деталиТип диодаНапряжение - Реверс постоянного тока (Vr) (макс.)Текущий - средний отрегулированный (Io)Напряжение - Вперед (Vf) (Макс.) @ ЕслискоростьВремя обратного восстановления (trr)Текущий - обратный утечек @ VrЕмкость @ Vr, FТип монтажаУпаковка / чехолПакет устройств поставщикаРабочая температура - Соединение
1SS401(TE85L,F)
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 20V 300MA SC70 в производствеSchottky20V300mA450mV @ 300mAFast Recovery =< 500ns, > 200mA (Io)
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50µA @ 20V46pF @ 0V, 1MHzSMD Поверхностный монтажSC-70, SOT-323SC-70125°C (Max)
CUS551V30,H3F
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 30V 500MA USC в производствеSchottky30V500mA470mV @ 500mAFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 20V
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SMD Поверхностный монтажSC-76, SOD-323USC125°C (Max)
CTS05S40,L3F
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 40V 500MA CST2 в производствеSchottky40V500mA350mV @ 100mAFast Recovery =< 500ns, > 200mA (Io)
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30µA @ 10V42pF @ 0V, 1MHzSMD Поверхностный монтажSOD-882CST2125°C (Max)
CCS15S30,L3QUF
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 20V 1.5A CST2C в производствеSchottky20V1.5A400mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 30V200pF @ 0V, 1MHzSMD Поверхностный монтаж0603 (1608 Metric)CST2C125°C (Max)
CCS15S30,L3F
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 20V 1.5A CST2C в производствеSchottky20V1.5A400mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 30V200pF @ 0V, 1MHzSMD Поверхностный монтаж0603 (1608 Metric)CST2C125°C (Max)
1SS307E,L3F
 Toshiba Semiconductor and Storage DIODE GEN PURP 80V 100MA SC79 в производствеStandard80V100mA1.3V @ 100mASmall Signal =< 200mA (Io), Any Speed
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10nA @ 80V6pF @ 0V, 1MHzSMD Поверхностный монтажSC-79, SOD-523SC-79150°C (Max)
CCS15F40,L3F
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 40V 1.5A CST2C в производствеSchottky40V1.5A640mV @ 1.5AFast Recovery =< 500ns, > 200mA (Io)
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25µA @ 40V130pF @ 0V, 1MHzSMD Поверхностный монтаж0603 (1608 Metric)CST2C150°C (Max)
CRS06(TE85L,Q,M)
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 20V 1A SFLAT в производствеSchottky20V1A360mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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1mA @ 20V60pF @ 10V, 1MHzSMD Поверхностный монтажSOD-123FS-FLAT (1.6x3.5)-40°C ~ 125°C
CMS01(TE12L,Q,M)
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 30V 3A MFLAT в производствеSchottky30V3A370mV @ 3AFast Recovery =< 500ns, > 200mA (Io)
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5mA @ 30V
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SMD Поверхностный монтажSOD-128M-FLAT (2.4x3.8)-40°C ~ 125°C
CMH08A(TE12L,Q,M)
 Toshiba Semiconductor and Storage DIODE GEN PURP 400V 2A MFLAT в производствеStandard400V2A1.8V @ 2AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 400V
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SMD Поверхностный монтажSOD-128M-FLAT (2.4x3.8)-40°C ~ 150°C
TRS10E65C,S1Q
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 650V 10A TO220-2L в производствеSilicon Carbide Schottky650V10A (DC)1.7V @ 10ANo Recovery Time > 500mA (Io)0ns90µA @ 650V
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Through HoleTO-220-2TO-220-2L175°C (Max)
TBAS16,LM
 Toshiba Semiconductor and Storage DIODE GEN PURP 80V 215MA SOT23-3 в производствеStandard80V215mA
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Standard Recovery >500ns, > 200mA (Io)
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-
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SMD Поверхностный монтажSOT-23-3 Flat LeadsSOT-23-3
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1SS417CT,L3F
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 40V 100MA FSC в производствеSchottky40V100mA620mV @ 100mASmall Signal =< 200mA (Io), Any Speed
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5µA @ 40V15pF @ 0V, 1MHzSMD Поверхностный монтаж2-SMD, Flat LeadfSC125°C (Max)
1SS370TE85LF
 Toshiba Semiconductor and Storage DIODE GEN PURP 200V 100MA SC70 в производствеStandard200V100mA1.2V @ 100mASmall Signal =< 200mA (Io), Any Speed60ns1µA @ 200V3pF @ 0V, 1MHzSMD Поверхностный монтажSC-70, SOT-323SC-70125°C (Max)
CRS09(TE85L,Q,M)
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 30V 1.5A SFLAT в производствеSchottky30V1.5A460mV @ 1.5AFast Recovery =< 500ns, > 200mA (Io)
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50µA @ 30V90pF @ 10V, 1MHzSMD Поверхностный монтажSOD-123FS-FLAT (1.6x3.5)-40°C ~ 150°C
TRS12E65C,S1Q
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 650V 12A TO220-2L в производствеSilicon Carbide Schottky650V12A (DC)1.7V @ 12ANo Recovery Time > 500mA (Io)0ns90µA @ 170V65pF @ 650V, 1MHzThrough HoleTO-220-2TO-220-2L175°C (Max)
CUS08F30,H3F
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 30V 800MA USC в производствеSchottky30V800mA220mV @ 10mAFast Recovery =< 500ns, > 200mA (Io)
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50µA @ 30V170pF @ 0V, 1MHzSMD Поверхностный монтажSC-76, SOD-323USC125°C (Max)
1SS367,H3F
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 10V 100MA SC76 в производствеSchottky10V100mA500mV @ 100mASmall Signal =< 200mA (Io), Any Speed
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20µA @ 10V40pF @ 0V, 1MHzSMD Поверхностный монтажSC-76, SOD-323
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125°C (Max)
CUS05S30,H3F
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 30V 500MA USC в производствеSchottky30V500mA340mV @ 100mAFast Recovery =< 500ns, > 200mA (Io)
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150µA @ 10V55pF @ 0V, 1MHzSMD Поверхностный монтажSC-76, SOD-323USC125°C (Max)
CMF04(TE12L,Q)
 Toshiba Semiconductor and Storage DIODE GEN PURP 800V 500MA MFLAT в производствеStandard800V500mA2.5V @ 500mAFast Recovery =< 500ns, > 200mA (Io)100ns50µA @ 800V
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SMD Поверхностный монтажSOD-128M-FLAT (2.4x3.8)-40°C ~ 150°C
BAS516,L3F
 Toshiba Semiconductor and Storage DIODE GEN PURP 100V 250MA ESC в производствеStandard100V250mA1.25V @ 150mAFast Recovery =< 500ns, > 200mA (Io)3ns200nA @ 80V0.35pF @ 0V, 1MHzSMD Поверхностный монтажSC-79, SOD-523ESC150°C (Max)
BAS316,H3F
 Toshiba Semiconductor and Storage DIODE GEN PURP 100V 250MA USC в производствеStandard100V250mA1.25V @ 150mAFast Recovery =< 500ns, > 200mA (Io)3ns200nA @ 80V0.35pF @ 0V, 1MHzSMD Поверхностный монтажSC-76, SOD-323USC150°C (Max)
BAS516,H3F
 Toshiba Semiconductor and Storage DIODE GEN PURP 100V 250MA ESC в производствеStandard100V250mA1.25V @ 150mAFast Recovery =< 500ns, > 200mA (Io)3ns200nA @ 80V0.35pF @ 0V, 1MHzSMD Поверхностный монтажSC-79, SOD-523ESC150°C (Max)
1SS187,LF
 Toshiba Semiconductor and Storage DIODE GEN PURP 80V 100MA S-MINI в производствеStandard80V100mA1.2V @ 100mASmall Signal =< 200mA (Io), Any Speed4ns500nA @ 80V4pF @ 0V, 1MHzSMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3S-Mini125°C (Max)
CTS05F40,L3F
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 40V 500MA CST2 в производствеSchottky40V500mA810mV @ 500mAFast Recovery =< 500ns, > 200mA (Io)
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15µA @ 40V28pF @ 0V, 1MHzSMD Поверхностный монтажSOD-882CST2150°C (Max)
DSR01S30SC,L3F
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 30V 100MA SC2 в производствеSchottky30V100mA620mV @ 100mASmall Signal =< 200mA (Io), Any Speed
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700µA @ 30V8.2pF @ 0V, 1MHzSMD Поверхностный монтаж2-SMD, No LeadSC2125°C (Max)
CUS05F40,H3F
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 40V 500MA USC в производствеSchottky40V500mA810mV @ 500mAFast Recovery =< 500ns, > 200mA (Io)
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15µA @ 40V28pF @ 0V, 1MHzSMD Поверхностный монтажSC-76, SOD-323USC150°C (Max)
1SS294,LF
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 40V 100MA SMINI в производствеSchottky40V100mA600mV @ 100mASmall Signal =< 200mA (Io), Any Speed
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5µA @ 40V25pF @ 0V, 1MHzSMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3S-Mini125°C (Max)
CUS10F40,H3F
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 40V 1A USC в производствеSchottky40V1A670mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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20µA @ 40V74pF @ 0V, 1MHzSMD Поверхностный монтажSC-76, SOD-323USC150°C (Max)
CBS10F40,L3F
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 40V 1A CST2B в производствеSchottky40V1A700mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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20µA @ 40V74pF @ 0V, 1MHzSMD Поверхностный монтажSOD-882CST2B150°C (Max)
CBS10S30,L3F
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 20V 1A CST2B в производствеSchottky20V1A450mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 30V135pF @ 0V, 1MHzSMD Поверхностный монтаж2-SMD, No LeadCST2B125°C (Max)
CBS10S40,L3F
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 40V 1A CST2B в производствеSchottky40V1A550mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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150µA @ 40V120pF @ 0V, 1MHzSMD Поверхностный монтаж2-SMD, No LeadCST2B125°C (Max)
CRG03(TE85L,Q,M)
 Toshiba Semiconductor and Storage DIODE GEN PURP 400V 1A SFLAT в производствеStandard400V1A1V @ 1AStandard Recovery >500ns, > 200mA (Io)
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10µA @ 400V
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SMD Поверхностный монтажSOD-123FS-FLAT (1.6x3.5)-40°C ~ 150°C
CRG01(TE85L,Q,M)
 Toshiba Semiconductor and Storage DIODE GEN PURP 100V 700MA SFLAT в производствеStandard100V700mA1.1V @ 700mAStandard Recovery >500ns, > 200mA (Io)
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10µA @ 100V
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SMD Поверхностный монтажSOD-123FS-FLAT (1.6x3.5)-40°C ~ 150°C
CRG07(TE85L,Q,M)
 Toshiba Semiconductor and Storage DIODE GEN PURP 400V 700MA S-FLAT в производствеStandard400V700mA1.1V @ 700mAStandard Recovery >500ns, > 200mA (Io)
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10µA @ 400V
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SMD Поверхностный монтажSOD-123FS-FLAT (1.6x3.5)175°C (Max)
CRG09(TE85L,Q,M)
 Toshiba Semiconductor and Storage DIODE GEN PURP 400V 1A S-FLAT в производствеStandard400V1A1.1V @ 700mAStandard Recovery >500ns, > 200mA (Io)
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10µA @ 400V
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SMD Поверхностный монтажSOD-123FS-FLAT (1.6x3.5)-40°C ~ 150°C
CRG02(TE85L,Q,M)
 Toshiba Semiconductor and Storage DIODE GEN PURP 400V 700MA SFLAT в производствеStandard400V700mA1.1V @ 700mAStandard Recovery >500ns, > 200mA (Io)
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10µA @ 400V
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SMD Поверхностный монтажSOD-123FS-FLAT (1.6x3.5)-40°C ~ 150°C
CRG04(TE85L,Q,M)
 Toshiba Semiconductor and Storage DIODE GEN PURP 600V 1A SFLAT в производствеStandard600V1A1.1V @ 1AStandard Recovery >500ns, > 200mA (Io)
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10µA @ 600V
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SMD Поверхностный монтажSOD-123FS-FLAT (1.6x3.5)-40°C ~ 150°C
1SS250(TE85L,F)
 Toshiba Semiconductor and Storage DIODE GEN PURP 200V 100MA SC59 устарелыйStandard200V100mA1.2V @ 100mASmall Signal =< 200mA (Io), Any Speed60ns1µA @ 200V3pF @ 0V, 1MHzSMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SC-59125°C (Max)
CRF03(TE85L,Q,M)
 Toshiba Semiconductor and Storage DIODE GEN PURP 600V 700MA SFLAT в производствеStandard600V700mA2V @ 700mAFast Recovery =< 500ns, > 200mA (Io)100ns50µA @ 600V
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SMD Поверхностный монтажSOD-123FS-FLAT (1.6x3.5)-40°C ~ 150°C
CRG05(TE85L,Q,M)
 Toshiba Semiconductor and Storage DIODE GEN PURP 800V 1A S-FLAT в производствеStandard800V1A1.2V @ 1AStandard Recovery >500ns, > 200mA (Io)
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10µA @ 800V
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SMD Поверхностный монтажSOD-123FS-FLAT (1.6x3.5)-40°C ~ 150°C
CMG05(TE12L,Q,M)
 Toshiba Semiconductor and Storage DIODE GEN PURP 400V 1A M-FLAT в производствеStandard400V1A1.1V @ 1AStandard Recovery >500ns, > 200mA (Io)
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10µA @ 400V
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SMD Поверхностный монтажSOD-128M-FLAT (2.4x3.8)-40°C ~ 150°C
CRH02(TE85L,Q,M)
 Toshiba Semiconductor and Storage DIODE GEN PURP 200V 500MA S-FLAT в производствеStandard200V500mA950mV @ 500mAFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 200V
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SMD Поверхностный монтажSOD-123FS-FLAT (1.6x3.5)150°C (Max)
CUS10I30A(TE85L,QM
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 30V 1A US-FLAT в производствеSchottky30V1A390mV @ 700mAFast Recovery =< 500ns, > 200mA (Io)
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60µA @ 30V50pF @ 10V, 1MHzSMD Поверхностный монтажSC-76, SOD-323US-FLAT (1.25x2.5)150°C (Max)
CUS06(TE85L,Q,M)
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 20V 1A US-FLAT в производствеSchottky20V1A450mV @ 700mAFast Recovery =< 500ns, > 200mA (Io)
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30µA @ 20V40pF @ 10V, 1MHzSMD Поверхностный монтажSC-76, SOD-323US-FLAT (1.25x2.5)-40°C ~ 150°C
CMG06(TE12L,Q,M)
 Toshiba Semiconductor and Storage DIODE GEN PURP 600V 1A M-FLAT в производствеStandard600V1A1.1V @ 1AStandard Recovery >500ns, > 200mA (Io)
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10µA @ 600V
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SMD Поверхностный монтажSOD-128M-FLAT (2.4x3.8)-40°C ~ 150°C
CUS05(TE85L,Q,M)
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 20V 1A US-FLAT в производствеSchottky20V1A370mV @ 700mAFast Recovery =< 500ns, > 200mA (Io)
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1mA @ 20V40pF @ 10V, 1MHzSMD Поверхностный монтажSC-76, SOD-323US-FLAT (1.25x2.5)-40°C ~ 125°C
CUS03(TE85L,Q,M)
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 40V 700MA US-FLAT в производствеSchottky40V700mA520mV @ 700mAFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 40V45pF @ 10V, 1MHzSMD Поверхностный монтажSC-76, SOD-323US-FLAT (1.25x2.5)-40°C ~ 150°C
CUS04(TE85L,Q,M)
 Toshiba Semiconductor and Storage DIODE SCHOTTKY 60V 700MA US-FLAT в производствеSchottky60V700mA580mV @ 700mAFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 60V38pF @ 10V, 1MHzSMD Поверхностный монтажSC-76, SOD-323US-FLAT (1.25x2.5)-40°C ~ 150°C
CMG07(TE12L,Q,M)
 Toshiba Semiconductor and Storage DIODE GEN PURP 400V 1A M-FLAT в производствеStandard400V1A
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Fast Recovery =< 500ns, > 200mA (Io)100ns
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SMD Поверхностный монтажSOD-128M-FLAT (2.4x3.8)
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