Toshiba Semiconductor and Storage агент по продажам - Диоды - выпрямители - одиночные - TRS8E65C,S1Q CMS01(TE12L) - ICCHIP

номер части	Производитель / Марка	Краткое описание	Статус детали	Тип диода	Напряжение - Реверс постоянного тока (Vr) (макс.)	Текущий - средний отрегулированный (Io)	Напряжение - Вперед (Vf) (Макс.) @ Если	скорость	Время обратного восстановления (trr)	Текущий - обратный утечек @ Vr	Емкость @ Vr, F	Тип монтажа	Упаковка / чехол	Пакет устройств поставщика	Рабочая температура - Соединение
TRS8E65C,S1Q	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 650V 8A TO220-2L	в производстве	Silicon Carbide Schottky	650V	8A (DC)	1.7V @ 8A	No Recovery Time > 500mA (Io)	0ns	90µA @ 650V	44pF @ 650V, 1MHz	Through Hole	TO-220-2	TO-220-2L	175°C (Max)
CMS01(TE12L)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 3A MFLAT	Discontinued at -	Schottky	30V	3A	370mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 30V	-	SMD Поверхностный монтаж	SOD-128	M-FLAT (2.4x3.8)	-40°C ~ 125°C
CMS02(TE12L)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 3A MFLAT	Discontinued at -	Schottky	30V	3A	400mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	SMD Поверхностный монтаж	SOD-128	M-FLAT (2.4x3.8)	-40°C ~ 125°C
CMS03(TE12L)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 3A MFLAT	Discontinued at -	Schottky	30V	3A	450mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	SMD Поверхностный монтаж	SOD-128	M-FLAT (2.4x3.8)	-40°C ~ 150°C
CMS04(TE12L)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 5A MFLAT	Discontinued at -	Schottky	30V	5A	370mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	8mA @ 30V	-	SMD Поверхностный монтаж	SOD-128	M-FLAT (2.4x3.8)	-40°C ~ 125°C
CMS09(TE12L)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 1A MFLAT	Discontinued at -	Schottky	30V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	SMD Поверхностный монтаж	SOD-128	M-FLAT (2.4x3.8)	-40°C ~ 150°C
CMS11(TE12L)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 2A MFLAT	Discontinued at -	Schottky	40V	2A	550mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	SMD Поверхностный монтаж	SOD-128	M-FLAT (2.4x3.8)	-40°C ~ 150°C
CRH01(TE85L)	Toshiba Semiconductor and Storage	DIODE GEN PURP 200V 1A SFLAT	Discontinued at -	Standard	200V	1A	980mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	-	SMD Поверхностный монтаж	SOD-123F	S-FLAT (1.6x3.5)	-40°C ~ 150°C
CRS01(TE85L)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 1A SFLAT	Discontinued at -	Schottky	30V	1A	360mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.5mA @ 30V	-	SMD Поверхностный монтаж	SOD-123F	S-FLAT (1.6x3.5)	-40°C ~ 125°C
CRS04(TE85L)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 1A SFLAT	Discontinued at -	Schottky	40V	1A	510mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 40V	-	SMD Поверхностный монтаж	SOD-123F	S-FLAT (1.6x3.5)	-40°C ~ 150°C
CRS08(TE85L)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 1.5A SFLAT	Discontinued at -	Schottky	30V	1.5A	360mV @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 30V	-	SMD Поверхностный монтаж	SOD-123F	S-FLAT (1.6x3.5)	-40°C ~ 125°C
CRS09(TE85L)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 1.5A SFLAT	Discontinued at -	Schottky	30V	1.5A	460mV @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 30V	-	SMD Поверхностный монтаж	SOD-123F	S-FLAT (1.6x3.5)	-40°C ~ 150°C
CRS11(TE85L)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 1A SFLAT	Discontinued at -	Schottky	30V	1A	360mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.5mA @ 30V	-	SMD Поверхностный монтаж	SOD-123F	S-FLAT (1.6x3.5)	-40°C ~ 125°C
CUS01(TE85L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 1A USFLAT	в производстве	Schottky	30V	1A	390mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.5mA @ 30V	-	SMD Поверхностный монтаж	SC-76, SOD-323	US-FLAT (1.25x2.5)	-40°C ~ 125°C
CUS02(TE85L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 1A USFLAT	в производстве	Schottky	30V	1A	470mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 30V	-	SMD Поверхностный монтаж	SC-76, SOD-323	US-FLAT (1.25x2.5)	-40°C ~ 150°C
U1GWJ49(TE12L,F)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 1A PWMINI	устарелый	Schottky	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	SMD Поверхностный монтаж	TO-243AA	PW-MINI	-40°C ~ 125°C
DSF07S30U(TPH3,F)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 700MA USC	устарелый	Schottky	30V	700mA	450mV @ 700mA	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 30V	170pF @ 0V, 1MHz	SMD Поверхностный монтаж	SC-76, SOD-323	USC	125°C (Max)
DSF05S30U(TPH3,F)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 500MA USC	устарелый	Schottky	30V	500mA	450mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	-	-	SMD Поверхностный монтаж	SC-76, SOD-323	USC	125°C (Max)
CMH05A(TE12L,Q,M)	Toshiba Semiconductor and Storage	DIODE GEN PURP 400V 1A MFLAT	в производстве	Standard	400V	1A	1.8V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	-	SMD Поверхностный монтаж	SOD-128	M-FLAT (2.4x3.8)	-40°C ~ 150°C
1SS389,H3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 100MA ESC	устарелый	Schottky	40V	100mA	600mV @ 50mA	Small Signal =< 200mA (Io), Any Speed	-	5µA @ 10V	25pF @ 0V, 1MHz	SMD Поверхностный монтаж	SC-79, SOD-523	ESC	125°C (Max)
DSF01S30SC(TPL3)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 100MA SC2	в производстве	Schottky	30V	100mA	500mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	50µA @ 30V	9.3pF @ 0V, 1MHz	SMD Поверхностный монтаж	2-SMD, No Lead	SC2	125°C (Max)
DSR01S30SC(TPL3)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 100MA SC2	в производстве	Schottky	30V	100mA	620mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	700µA @ 30V	8.2pF @ 0V, 1MHz	SMD Поверхностный монтаж	2-SMD, No Lead	SC2	125°C (Max)
CBS05F30(TPL3)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 500MA CST2B	Discontinued at -	Schottky	30V	500mA	450mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 30V	118pF @ 0V, 1MHz	SMD Поверхностный монтаж	2-SMD, No Lead	CST2B	125°C (Max)
1SS397TE85LF	Toshiba Semiconductor and Storage	DIODE GEN PURP 400V 100MA SC70	в производстве	Standard	400V	100mA	1.3V @ 100mA	Small Signal =< 200mA (Io), Any Speed	500ns	1µA @ 400V	5pF @ 0V, 1MHz	SMD Поверхностный монтаж	SC-70, SOT-323	SC-70	125°C (Max)
1SS416CT,L3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 100MA FSC	в производстве	Schottky	30V	100mA	500mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	50µA @ 30V	15pF @ 0V, 1MHz	SMD Поверхностный монтаж	2-SMD, Flat Lead	fSC	125°C (Max)
1SS424(TPL3,F)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 20V 200MA SSM	в производстве	Schottky	20V	200mA	500mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	-	50µA @ 20V	20pF @ 0V, 1MHz	SMD Поверхностный монтаж	SC-75, SOT-416	SSM	125°C (Max)
1SS307(TE85L,F)	Toshiba Semiconductor and Storage	DIODE GEN PURP 30V 100MA SMINI	в производстве	Standard	30V	100mA	1.3V @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	10µA @ 30V	6pF @ 0V, 1MHz	SMD Поверхностный монтаж	TO-236-3, SC-59, SOT-23-3	S-Mini	125°C (Max)
CCS15S30,L3IDTF	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 20V 1.5A CST2C	Discontinued at -	Schottky	20V	1.5A	400mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	200pF @ 0V, 1MHz	SMD Поверхностный монтаж	0603 (1608 Metric)	CST2C	125°C (Max)
1SS193S,LF(D	Toshiba Semiconductor and Storage	DIODE GEN PURP 80V 100MA SMINI	устарелый	Standard	80V	100mA	1.2V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	500nA @ 80V	3pF @ 0V, 1MHz	SMD Поверхностный монтаж	TO-236-3, SC-59, SOT-23-3	S-Mini	125°C (Max)
CLH01(TE16L,Q)	Toshiba Semiconductor and Storage	DIODE GEN PURP 200V 3A L-FLAT	устарелый	Standard	200V	3A (DC)	0.98V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	-	SMD Поверхностный монтаж	L-FLAT™	L-FLAT™ (4x5.5)	-40°C ~ 150°C
CLH01(TE16R,Q)	Toshiba Semiconductor and Storage	DIODE GEN PURP 200V 3A L-FLAT	устарелый	Standard	200V	3A (DC)	0.98V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	-	SMD Поверхностный монтаж	L-FLAT™	L-FLAT™ (4x5.5)	-40°C ~ 150°C
CLH02(TE16L,Q)	Toshiba Semiconductor and Storage	DIODE GEN PURP 300V 3A L-FLAT	устарелый	Standard	300V	3A (DC)	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	-	SMD Поверхностный монтаж	L-FLAT™	L-FLAT™ (4x5.5)	-40°C ~ 150°C
CLH02(TE16R,Q)	Toshiba Semiconductor and Storage	DIODE GEN PURP 300V 3A L-FLAT	устарелый	Standard	300V	3A (DC)	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	-	SMD Поверхностный монтаж	L-FLAT™	L-FLAT™ (4x5.5)	-40°C ~ 150°C
CLH03(TE16L,Q)	Toshiba Semiconductor and Storage	DIODE GEN PURP 400V 3A L-FLAT	устарелый	Standard	400V	3A (DC)	-	Fast Recovery =< 500ns, > 200mA (Io)	35ns	-	-	SMD Поверхностный монтаж	L-FLAT™	L-FLAT™ (4x5.5)	-
CLH03(TE16R,Q)	Toshiba Semiconductor and Storage	DIODE GEN PURP 400V 3A L-FLAT	устарелый	Standard	400V	3A (DC)	-	Fast Recovery =< 500ns, > 200mA (Io)	35ns	-	-	SMD Поверхностный монтаж	L-FLAT™	L-FLAT™ (4x5.5)	-
CLH05(T6L,NKOD,Q)	Toshiba Semiconductor and Storage	DIODE GEN PURP 200V 5A L-FLAT	устарелый	Standard	200V	5A (DC)	0.98V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	-	SMD Поверхностный монтаж	L-FLAT™	L-FLAT™ (4x5.5)	-40°C ~ 150°C
CLH05(TE16R,Q)	Toshiba Semiconductor and Storage	DIODE GEN PURP 200V 5A L-FLAT	устарелый	Standard	200V	5A (DC)	0.98V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	-	SMD Поверхностный монтаж	L-FLAT™	L-FLAT™ (4x5.5)	-40°C ~ 150°C
CLH05,LMBJQ(O	Toshiba Semiconductor and Storage	DIODE GEN PURP 200V 5A L-FLAT	устарелый	Standard	200V	5A (DC)	0.98V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	-	SMD Поверхностный монтаж	L-FLAT™	L-FLAT™ (4x5.5)	-40°C ~ 150°C
CLH06(TE16L,Q)	Toshiba Semiconductor and Storage	DIODE GEN PURP 300V 5A L-FLAT	устарелый	Standard	300V	5A (DC)	-	Fast Recovery =< 500ns, > 200mA (Io)	35ns	-	-	SMD Поверхностный монтаж	L-FLAT™	L-FLAT™ (4x5.5)	-
CLH06(TE16R,Q)	Toshiba Semiconductor and Storage	DIODE GEN PURP 300V 5A L-FLAT	устарелый	Standard	300V	5A (DC)	-	Fast Recovery =< 500ns, > 200mA (Io)	35ns	-	-	SMD Поверхностный монтаж	L-FLAT™	L-FLAT™ (4x5.5)	-
CLH07(TE16L,NMB,Q)	Toshiba Semiconductor and Storage	DIODE GEN PURP 400V 5A L-FLAT	устарелый	Standard	400V	5A (DC)	1.8V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	-	SMD Поверхностный монтаж	L-FLAT™	L-FLAT™ (4x5.5)	-40°C ~ 150°C
CLH07(TE16R,Q)	Toshiba Semiconductor and Storage	DIODE GEN PURP 400V 5A L-FLAT	устарелый	Standard	400V	5A (DC)	1.8V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	-	SMD Поверхностный монтаж	L-FLAT™	L-FLAT™ (4x5.5)	-40°C ~ 150°C
CLS01(T6LSONY,Q)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 10A L-FLAT	устарелый	Schottky	30V	10A (DC)	0.47V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 30V	530pF @ 10V, 1MHz	SMD Поверхностный монтаж	L-FLAT™	L-FLAT™ (4x5.5)	-40°C ~ 125°C
CLS01(TE16L,PAS,Q)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 10A L-FLAT	устарелый	Schottky	30V	10A (DC)	0.47V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 30V	530pF @ 10V, 1MHz	SMD Поверхностный монтаж	L-FLAT™	L-FLAT™ (4x5.5)	-40°C ~ 125°C
CLS01(TE16R,Q)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 10A L-FLAT	устарелый	Schottky	30V	10A (DC)	0.47V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 30V	530pF @ 10V, 1MHz	SMD Поверхностный монтаж	L-FLAT™	L-FLAT™ (4x5.5)	-40°C ~ 125°C
CLS01,LFJFQ(O	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 10A L-FLAT	устарелый	Schottky	30V	10A (DC)	0.47V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 30V	530pF @ 10V, 1MHz	SMD Поверхностный монтаж	L-FLAT™	L-FLAT™ (4x5.5)	-40°C ~ 125°C
CLS02(T6L,CANO-O,Q	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 10A L-FLAT	устарелый	Schottky	40V	10A (DC)	0.55V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 40V	420pF @ 10V, 1MHz	SMD Поверхностный монтаж	L-FLAT™	L-FLAT™ (4x5.5)	-40°C ~ 125°C
CLS02(T6L,CLAR,Q)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 10A L-FLAT	устарелый	Schottky	40V	10A (DC)	0.55V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 40V	420pF @ 10V, 1MHz	SMD Поверхностный монтаж	L-FLAT™	L-FLAT™ (4x5.5)	-40°C ~ 125°C
CLS02(TE16L,HIT,Q)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 10A L-FLAT	устарелый	Schottky	40V	10A (DC)	0.55V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 40V	420pF @ 10V, 1MHz	SMD Поверхностный монтаж	L-FLAT™	L-FLAT™ (4x5.5)	-40°C ~ 125°C
CLS02(TE16L,SQC,Q)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 10A L-FLAT	устарелый	Schottky	40V	10A (DC)	0.55V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 40V	420pF @ 10V, 1MHz	SMD Поверхностный монтаж	L-FLAT™	L-FLAT™ (4x5.5)	-40°C ~ 125°C

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