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Toshiba Semiconductor and Storage |
DIODE GEN PURP 200V 1A MFLAT |
в производстве | Standard | 200V | 1A | 980mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | SMD Поверхностный монтаж | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 1A S-FLAT |
в производстве | Schottky | 30V | 1A | 360mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 30V | 82pF @ 10V, 1MHz | SMD Поверхностный монтаж | SOD-123F | S-FLAT (1.6x3.5) | 150°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 1.5A S-FLAT |
в производстве | Schottky | 30V | 1.5A | 460mV @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 60µA @ 30V | 50pF @ 10V, 1MHz | SMD Поверхностный монтаж | SOD-123F | S-FLAT (1.6x3.5) | 150°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 1.5A S-FLAT |
в производстве | Schottky | 30V | 1.5A | 400mV @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 30V | 82pF @ 10V, 1MHz | SMD Поверхностный монтаж | SOD-123F | S-FLAT (1.6x3.5) | 150°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 1.5A S-FLAT |
в производстве | Schottky | 40V | 1.5A | 550mV @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 60µA @ 40V | 35pF @ 10V, 1MHz | SMD Поверхностный монтаж | SOD-123F | S-FLAT (1.6x3.5) | 150°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 1A US-FLAT |
в производстве | Schottky | 40V | 1A | 490mV @ 700mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 60µA @ 40V | 35pF @ 10V, 1MHz | SMD Поверхностный монтаж | SC-76, SOD-323 | US-FLAT (1.25x2.5) | 150°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 1A SFLAT |
в производстве | Schottky | 30V | 1A | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 30V | - | SMD Поверхностный монтаж | SOD-123F | S-FLAT (1.6x3.5) | -40°C ~ 150°C |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 40V 1A S-FLAT |
в производстве | Standard | 40V | 1A | 490mV @ 700mA | Standard Recovery >500ns, > 200mA (Io) | - | 60µA @ 40V | 35pF @ 10V, 1MHz | SMD Поверхностный монтаж | SOD-123F | S-FLAT (1.6x3.5) | 150°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 1A S-FLAT |
в производстве | Schottky | 40V | 1A | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 40V | 62pF @ 10V, 1MHz | SMD Поверхностный монтаж | SOD-123F | S-FLAT (1.6x3.5) | 150°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 800V 500MA S-FLAT |
в производстве | Standard | 800V | 500mA | 3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 50µA @ 800V | - | SMD Поверхностный монтаж | SOD-123F | S-FLAT (1.6x3.5) | -40°C ~ 150°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 1.5A US-FLAT |
в производстве | Schottky | 30V | 1.5A | 460mV @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 60µA @ 30V | 50pF @ 10V, 1MHz | SMD Поверхностный монтаж | SC-76, SOD-323 | US-FLAT (1.25x2.5) | 150°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 2A S-FLAT |
в производстве | Schottky | 30V | 2A | 450mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 30V | 82pF @ 10V, 1MHz | SMD Поверхностный монтаж | SOD-123F | S-FLAT (1.6x3.5) | 150°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 600V 1A M-FLAT |
в производстве | Standard | 600V | 1A | 2V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 600V | - | SMD Поверхностный монтаж | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 2A S-FLAT |
в производстве | Schottky | 40V | 2A | 600mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 60µA @ 40V | 35pF @ 10V, 1MHz | SMD Поверхностный монтаж | SOD-123F | S-FLAT (1.6x3.5) | 150°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 2A S-FLAT |
в производстве | Schottky | 40V | 2A | 520mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 40V | 62pF @ 10V, 1MHz | SMD Поверхностный монтаж | SOD-123F | S-FLAT (1.6x3.5) | 150°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 3A S-FLAT |
в производстве | Schottky | 30V | 3A | 490mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 30V | 82pF @ 10V, 1MHz | SMD Поверхностный монтаж | SOD-123F | S-FLAT (1.6x3.5) | 150°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 2A SFLAT |
в производстве | Schottky | 30V | 2A | 490mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 60µA @ 30V | 50pF @ 10V, 1MHz | SMD Поверхностный монтаж | SOD-123F | S-FLAT (1.6x3.5) | 150°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 2A S-FLAT |
в производстве | Schottky | 30V | 2A | 490mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 30V | 90pF @ 10V, 1MHz | SMD Поверхностный монтаж | SOD-123F | S-FLAT (1.6x3.5) | -40°C ~ 150°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 3A S-FLAT |
в производстве | Schottky | 30V | 3A (DC) | 520mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 30V | 90pF @ 10V, 1MHz | SMD Поверхностный монтаж | SOD-123F | S-FLAT (1.6x3.5) | -40°C ~ 150°C |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 200V 1A SFLAT |
в производстве | Standard | 200V | 1A | 980mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | SMD Поверхностный монтаж | SOD-123F | S-FLAT (1.6x3.5) | -40°C ~ 150°C |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 900V 500MA M-FLAT |
в производстве | Standard | 900V | 500mA | 2.5V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 50µA @ 900V | - | SMD Поверхностный монтаж | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 125°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 1A M-FLAT |
в производстве | Schottky | 30V | 1A | 370mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5mA @ 30V | 70pF @ 10V, 1MHz | SMD Поверхностный монтаж | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 125°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 1A M-FLAT |
в производстве | Schottky | 30V | 1A | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | 70pF @ 10V, 1MHz | SMD Поверхностный монтаж | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 600V 2A MFLAT |
в производстве | Standard | 600V | 2A | 2V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 50µA @ 600V | - | SMD Поверхностный монтаж | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 3A S-FLAT |
в производстве | Schottky | 40V | 3A | 550mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 40V | 62pF @ 10V, 1MHz | SMD Поверхностный монтаж | SOD-123F | S-FLAT (1.6x3.5) | 150°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 600V 2A M-FLAT |
в производстве | Standard | 600V | 2A | 1.1V @ 2A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | - | SMD Поверхностный монтаж | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 60V 1A S-FLAT |
в производстве | Schottky | 60V | 1A | 550mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 60V | 40pF @ 10V, 1MHz | SMD Поверхностный монтаж | SOD-123F | S-FLAT (1.6x3.5) | 150°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 2A M-FLAT |
в производстве | Schottky | 30V | 2A | 480mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 30V | 90pF @ 10V, 1MHz | SMD Поверхностный монтаж | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 400V 2A M-FLAT |
в производстве | Standard | 400V | 2A | 1.1V @ 2A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | - | SMD Поверхностный монтаж | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 60V 1A SFLAT |
в производстве | Schottky | 60V | 1A | 580mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | - | SMD Поверхностный монтаж | SOD-123F | S-FLAT (1.6x3.5) | -40°C ~ 150°C |
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Toshiba Semiconductor and Storage |
X35 PB-F DIODE M-FLAT MOQ3000 V |
в производстве | - | - | - | - | - | - | - | - | - | - | - | - |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 2A MFLAT |
в производстве | Schottky | 30V | 2A | 450mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | SMD Поверхностный монтаж | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 200V 2A M-FLAT |
в производстве | Standard | 200V | 2A | 980mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 10µA @ 200V | - | SMD Поверхностный монтаж | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 1A M-FLAT |
в производстве | Schottky | 30V | 1A | 360mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 30V | 82pF @ 10V, 1MHz | SMD Поверхностный монтаж | SOD-128 | M-FLAT (2.4x3.8) | 150°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 1A M-FLAT |
в производстве | Schottky | 40V | 1A | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 40V | 62pF @ 10V, 1MHz | SMD Поверхностный монтаж | SOD-128 | M-FLAT (2.4x3.8) | 150°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 2A M-FLAT |
в производстве | Schottky | 30V | 2A | 450mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 30V | 82pF @ 10V, 1MHz | SMD Поверхностный монтаж | SOD-128 | M-FLAT (2.4x3.8) | 150°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 80V 100MA SC59-3 |
в производстве | Standard | 80V | 100mA | 1.2V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 500nA @ 80V | 4pF @ 0V, 1MHz | SMD Поверхностный монтаж | TO-236-3, SC-59, SOT-23-3 | SC-59-3 | 125°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 1.5A M-FLAT |
в производстве | Schottky | 40V | 1.5A | 490mV @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 40V | 62pF @ 10V, 1MHz | SMD Поверхностный монтаж | SOD-128 | M-FLAT (2.4x3.8) | 150°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 3A M-FLAT |
в производстве | Schottky | 30V | 3A | 490mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 30V | 82pF @ 10V, 1MHz | SMD Поверхностный монтаж | SOD-128 | M-FLAT (2.4x3.8) | 150°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 2A M-FLAT |
в производстве | Schottky | 40V | 2A | 520mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 40V | 62pF @ 10V, 1MHz | SMD Поверхностный монтаж | SOD-128 | M-FLAT (2.4x3.8) | 150°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 3A M-FLAT |
в производстве | Schottky | 40V | 3A | 550mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 40V | 62pF @ 10V, 1MHz | SMD Поверхностный монтаж | SOD-128 | M-FLAT (2.4x3.8) | 150°C (Max) |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 60V 2A MFLAT |
в производстве | Schottky | 60V | 2A | 580mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 60V | - | SMD Поверхностный монтаж | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 400V 1A M-FLAT |
в производстве | Standard | 400V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 10µA @ 400V | - | SMD Поверхностный монтаж | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 400V 1A M-FLAT |
в производстве | Standard | 400V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | - | SMD Поверхностный монтаж | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 40V 3A MFLAT |
в производстве | Schottky | 40V | 3A | 550mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 40V | - | SMD Поверхностный монтаж | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 400V 2A M-FLAT |
в производстве | Standard | 400V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 10µA @ 400V | - | SMD Поверхностный монтаж | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 60V 3A M-FLAT |
в производстве | Schottky | 60V | 3A | 580mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 60V | 102pF @ 10V, 1MHz | SMD Поверхностный монтаж | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 200V 3A M-FLAT |
в производстве | Standard | 200V | 3A | 980mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 10µA @ 200V | - | SMD Поверхностный монтаж | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
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Toshiba Semiconductor and Storage |
DIODE GEN PURP 400V 3A M-FLAT |
в производстве | Standard | 400V | 3A | 1.8V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 10µA @ 400V | - | SMD Поверхностный монтаж | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
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Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 650V 6A TO220-2L |
устарелый | Silicon Carbide Schottky | 650V | 6A (DC) | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 90µA @ 650V | 35pF @ 650V, 1MHz | Through Hole | TO-220-2 | TO-220-2L | 175°C (Max) |