Vishay агент по продажам - Диоды - выпрямители - одиночные - MBR1645-10HE3/45 MBR1645-2HE3/45 - ICCHIP

номер части	Производитель / Марка	Краткое описание	Статус детали	Тип диода	Напряжение - Реверс постоянного тока (Vr) (макс.)	Текущий - средний отрегулированный (Io)	Напряжение - Вперед (Vf) (Макс.) @ Если	скорость	Время обратного восстановления (trr)	Текущий - обратный утечек @ Vr	Емкость @ Vr, F	Тип монтажа	Упаковка / чехол	Пакет устройств поставщика	Рабочая температура - Соединение
MBR1645-10HE3/45	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY ARRAY TO220AB	устарелый	Schottky	45V	16A	750mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 45V	-	Through Hole	TO-220-2	TO-220AC	-65°C ~ 150°C
MBR1645-2HE3/45	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY ARRAY TO220AB	устарелый	Schottky	45V	16A	750mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 45V	-	Through Hole	TO-220-2	TO-220AC	-65°C ~ 150°C
MBR1660-5300HE3/45	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY ARRAY TO220AB	устарелый	Schottky	60V	16A	750mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 60V	-	Through Hole	TO-220-2	TO-220AC	-65°C ~ 150°C
NS8KT-7000HE3/45	Vishay Semiconductor Diodes Division	DIODE GEN PURP TO220AC	устарелый	Standard	800V	8A	1.1V @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 800V	55pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
NS8KT-7002HE3/45	Vishay Semiconductor Diodes Division	DIODE GEN PURP TO220AC	устарелый	Standard	800V	8A	1.1V @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 800V	55pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SB15H45L-5000E3/72	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY	устарелый	-	-	-	-	-	-	-	-	-	-	-	-
SB15H45L-7000E3/72	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY	устарелый	-	-	-	-	-	-	-	-	-	-	-	-
VSB3200-M3/51	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY DO201AD	устарелый	Schottky	200V	3A	1.2V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	60µA @ 200V	175pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-40°C ~ 150°C
UH1B-M3/5AT	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1A SMA	устарелый	Standard	100V	1A	1.05V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	1µA @ 100V	17pF @ 4V, 1MHz	SMD Поверхностный монтаж	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
UH1B-M3/61T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1A SMA	устарелый	Standard	100V	1A	1.05V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	1µA @ 100V	17pF @ 4V, 1MHz	SMD Поверхностный монтаж	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
UH1C-M3/5AT	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1A SMA	устарелый	Standard	150V	1A	1.05V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	1µA @ 150V	17pF @ 4V, 1MHz	SMD Поверхностный монтаж	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
UH1C-M3/61T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1A SMA	устарелый	Standard	150V	1A	1.05V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	1µA @ 150V	17pF @ 4V, 1MHz	SMD Поверхностный монтаж	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
UH2B-M3/52T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 2A SMA	устарелый	Standard	100V	2A	1.05V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	2µA @ 100V	42pF @ 4V, 1MHz	SMD Поверхностный монтаж	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
UH2B-M3/5BT	Vishay Semiconductor Diodes Division	DIODE GEN PURP 2A SMA	устарелый	Standard	100V	2A	1.05V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	2µA @ 100V	42pF @ 4V, 1MHz	SMD Поверхностный монтаж	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
UH2C-M3/52T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 2A SMA	устарелый	Standard	150V	2A	1.05V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	2µA @ 150V	42pF @ 4V, 1MHz	SMD Поверхностный монтаж	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
UH2C-M3/5BT	Vishay Semiconductor Diodes Division	DIODE GEN PURP 2A SMA	устарелый	Standard	150V	2A	1.05V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	2µA @ 150V	42pF @ 4V, 1MHz	SMD Поверхностный монтаж	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
UH6PD-M3H/I	Vishay Semiconductor Diodes Division	DIODE GEN PURP 6A TO277A	устарелый	Standard	200V	6A	1.05V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	40ns	10µA @ 200V	80pF @ 4V, 1MHz	SMD Поверхностный монтаж	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
VS-15ETH03STRL-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 300V 15A TO263AB	Preliminary	Standard	300V	15A	1.25V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	40ns	40µA @ 300V	-	SMD Поверхностный монтаж	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-65°C ~ 175°C
VS-15ETH03STRR-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 300V 15A TO263AB	Preliminary	Standard	300V	15A	1.25V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	40ns	40µA @ 300V	-	SMD Поверхностный монтаж	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-65°C ~ 175°C
VS-15ETH06STRL-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 15A TO263AB	Preliminary	Standard	600V	15A	2.2V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	50µA @ 600V	-	SMD Поверхностный монтаж	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-65°C ~ 175°C
VS-15ETH06STRR-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 15A TO263AB	Preliminary	Standard	600V	15A	2.2V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	50µA @ 600V	-	SMD Поверхностный монтаж	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-65°C ~ 175°C
VS-15ETL06STRL-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 15A TO263AB	Preliminary	Standard	600V	15A	1.05V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	270ns	10µA @ 600V	-	SMD Поверхностный монтаж	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-65°C ~ 175°C
VS-15ETL06STRR-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 15A TO263AB	Preliminary	Standard	600V	15A	1.05V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	270ns	10µA @ 600V	-	SMD Поверхностный монтаж	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-65°C ~ 175°C
VS-15ETX06STRL-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 15A TO263AB	Preliminary	Standard	600V	15A	3.2V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	32ns	50µA @ 600V	-	SMD Поверхностный монтаж	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-65°C ~ 175°C
VS-15ETX06STRR-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 15A TO263AB	Preliminary	Standard	600V	15A	3.2V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	32ns	50µA @ 600V	-	SMD Поверхностный монтаж	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-65°C ~ 175°C
VS-19TQ015STRR-M3	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 19A 15V D2PAK	Preliminary	Schottky	15V	19A	460mV @ 38A	Fast Recovery =< 500ns, > 200mA (Io)	-	10.5mA @ 15V	2000pF @ 5V, 1MHz	SMD Поверхностный монтаж	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 125°C
VS-20CTH03STRL-M3	Vishay Semiconductor Diodes Division	DIODE STANDARD 300V 10A TO263AB	Preliminary	Standard	300V	10A	1.25V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	20µA @ 300V	-	SMD Поверхностный монтаж	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 175°C
VS-20CTH03STRR-M3	Vishay Semiconductor Diodes Division	DIODE STANDARD 300V 10A TO263AB	Preliminary	Standard	300V	10A	1.25V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	20µA @ 300V	-	SMD Поверхностный монтаж	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 175°C
VS-30ETH06STRL-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 30A TO263AB	Preliminary	Standard	600V	30A	2.6V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	50µA @ 600V	-	SMD Поверхностный монтаж	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-65°C ~ 175°C
VS-30ETH06STRR-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 30A TO263AB	Preliminary	Standard	600V	30A	2.6V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	50µA @ 600V	-	SMD Поверхностный монтаж	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-65°C ~ 175°C
VS-8ETH03STRL-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 300V 8A TO263AB	Preliminary	Standard	300V	8A	1.25V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	20µA @ 300V	-	SMD Поверхностный монтаж	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-65°C ~ 175°C
VS-8ETH03STRR-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 300V 8A TO263AB	Preliminary	Standard	300V	8A	1.25V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	20µA @ 300V	-	SMD Поверхностный монтаж	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-65°C ~ 175°C
VS-8ETH06STRL-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 8A TO263AB	Preliminary	Standard	600V	8A	2.4V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	50µA @ 600V	-	SMD Поверхностный монтаж	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-65°C ~ 175°C
VS-8ETH06STRR-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 8A TO263AB	Preliminary	Standard	600V	8A	2.4V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	50µA @ 600V	-	SMD Поверхностный монтаж	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-65°C ~ 175°C
VS-8ETL06STRL-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 8A TO263AB	Preliminary	Standard	600V	8A	1.05V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	-	SMD Поверхностный монтаж	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-65°C ~ 175°C
VS-8ETL06STRR-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 8A TO263AB	Preliminary	Standard	600V	8A	1.05V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	-	SMD Поверхностный монтаж	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-65°C ~ 175°C
VS-8ETU04STRL-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 8A TO262	Preliminary	Standard	400V	8A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	10µA @ 400V	-	SMD Поверхностный монтаж	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-65°C ~ 175°C
VS-8ETU04STRR-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 8A TO263AB	Preliminary	Standard	400V	8A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	10µA @ 400V	-	SMD Поверхностный монтаж	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-65°C ~ 175°C
VS-8ETX06STRL-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 8A TO263AB	Preliminary	Standard	600V	8A	3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	24ns	50µA @ 600V	-	SMD Поверхностный монтаж	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-65°C ~ 175°C
VS-8ETX06STRR-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 8A TO263AB	Preliminary	Standard	600V	8A	3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	24ns	50µA @ 600V	-	SMD Поверхностный монтаж	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-65°C ~ 175°C
VS-HFA04TB60SL-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 4A D2PAK	Preliminary	Standard	600V	4A (DC)	2.2V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	42ns	3µA @ 600V	-	SMD Поверхностный монтаж	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
VS-HFA04TB60SR-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 4A D2PAK	Preliminary	Standard	600V	4A (DC)	2.2V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	42ns	3µA @ 600V	-	SMD Поверхностный монтаж	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
VS-HFA06TB120SL-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 6A D2PAK	Preliminary	Standard	1200V	6A (DC)	3.9V @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	80ns	5µA @ 1200V	-	SMD Поверхностный монтаж	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
VS-HFA06TB120SR-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 6A D2PAK	Preliminary	Standard	1200V	6A (DC)	3.9V @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	80ns	5µA @ 1200V	-	SMD Поверхностный монтаж	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
VS-HFA08TB60SL-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 8A D2PAK	Preliminary	Standard	600V	8A (DC)	2.1V @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	55ns	5µA @ 600V	-	SMD Поверхностный монтаж	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
VS-HFA08TB60SR-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 8A D2PAK	Preliminary	Standard	600V	8A (DC)	2.1V @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	55ns	5µA @ 600V	-	SMD Поверхностный монтаж	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
VS-HFA15TB60SL-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 15A D2PAK	Preliminary	Standard	600V	15A (DC)	2V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	10µA @ 600V	-	SMD Поверхностный монтаж	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
VS-HFA15TB60SR-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 15A D2PAK	Preliminary	Standard	600V	15A (DC)	2V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	10µA @ 600V	-	SMD Поверхностный монтаж	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
VS-HFA16TB120SL-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 16A D2PAK	Preliminary	Standard	1200V	16A (DC)	3.93V @ 32A	Fast Recovery =< 500ns, > 200mA (Io)	135ns	20µA @ 1200V	-	SMD Поверхностный монтаж	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
VS-HFA16TB120SR-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 16A D2PAK	Preliminary	Standard	1200V	16A (DC)	3.93V @ 32A	Fast Recovery =< 500ns, > 200mA (Io)	135ns	20µA @ 1200V	-	SMD Поверхностный монтаж	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C

Производители для Диоды - выпрямители - одиночные