номер части Производитель / Марка Краткое описание Статус деталиТип диодаТехнологииНапряжение - Реверс пика (макс.)Текущий - средний отрегулированный (Io)Напряжение - Вперед (Vf) (Макс.) @ ЕслиТекущий - обратный утечек @ VrРабочая ТемператураТип монтажаУпаковка / чехолПакет устройств поставщика
Comchip Technology BRIDGE RECTIFIER 40V 1A MBS в производствеSingle PhaseSchottky40V1A550mV @ 1A500µA @ 40V-55°C ~ 125°C (TJ)SMD Поверхностный монтажTO-269AA, 4-BESOPMBS
Comchip Technology BRIDGE RECTIFIER 100V 1A MBS в производствеSingle PhaseSchottky100V1A850mV @ 1A500µA @ 100V-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-269AA, 4-BESOPMBS
Vishay Semiconductor Diodes Division DIODE BRIDGE 0.5A 600V MBS в производствеSingle PhaseStandard600V500mA1V @ 500mA5µA @ 600V-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-269AA, 4-BESOPTO-269AA (MBS)
Micro Commercial Co DIODE BRIDGE GPP 2A 1000V SDB-1 в производствеSingle PhaseStandard1kV2A1.2V @ 2A10µA @ 1000V-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-SMD, Gull WingSDB-1
ON Semiconductor DIODE BRIDGE 600V 1.5A 4-SMD в производствеSingle PhaseStandard600V1.5A1.1V @ 1.5A5µA @ 600V-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-SMD, Gull Wing4-SDIP
ON Semiconductor DIODE BRIDGE 50V 1.5A 4-SMD в производствеSingle PhaseStandard50V1.5A1.1V @ 1A5µA @ 50V-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-SMD, Gull Wing4-SDIP
ON Semiconductor DIODE BRIDGE 1000V 2A SDIP в производствеSingle PhaseStandard1kV2A1.1V @ 2A3µA @ 1000V-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-SMD, Gull Wing4-SDIP
ON Semiconductor DIODE BRIDGE 50V 2A SDIP в производствеSingle PhaseStandard50V2A1.1V @ 2A3µA @ 50V-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-SMD, Gull Wing4-SDIP
ON Semiconductor DIODE BRIDGE 100V 2A SDIP в производствеSingle PhaseStandard100V2A1.1V @ 2A3µA @ 100V-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-SMD, Gull Wing4-SDIP
Comchip Technology RECT BRIDGE GPP 400V 2A DFS в производствеSingle PhaseStandard400V2A1.1V @ 2A10µA @ 400V-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-SMD, Gull WingDFS
Diodes Incorporated RECT BRIDGE GP 600V 0.5A MINIDIP в производствеSingle PhaseStandard600V500mA1.15V @ 400mA5µA @ 600V-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-SMD4-MiniDIP
Vishay Semiconductor Diodes Division RECTIFIER BRIDGE 1AMP 200V DFS в производствеSingle PhaseStandard200V1A1.1V @ 1A5µA @ 200V-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-SMD, Gull WingDFS
Vishay Semiconductor Diodes Division DIODE GPP 1A 600V 4SMD в производствеSingle PhaseStandard600V1A1.1V @ 1A5µA @ 600V-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-SMD, Gull WingDFS
Bourns Inc. DIO BR VRRM 100V 2A MBS в производствеSingle PhaseSchottky100V2A850mV @ 1A100µA @ 100V-55°C ~ 125°C (TC)SMD Поверхностный монтажChip, Concave Terminals
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Vishay Semiconductor Diodes Division DIODE 0.5A 400V 150NS MBS в производствеSingle PhaseStandard400V500mA1.25V @ 400mA5µA @ 400V-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-269AA, 4-BESOPTO-269AA (MBS)
Central Semiconductor Corp IC RECT BRIDGE 100V 2A HD DIP в производствеSingle PhaseSchottky100V2A840mV @ 2A4µA @ 100V-50°C ~ 125°C (TJ)SMD Поверхностный монтаж4-SMD, Gull Wing4-HD DIP
SMC Diode Solutions BRIDGE RECT 1P 600V 1.5A DB-M в производствеSingle PhaseStandard600V1.5A1.1V @ 1.5A5µA @ 600V-55°C ~ 150°C (TJ)Through Hole4-EDIP (0.321", 8.15mm)DB-M
Comchip Technology RECTIFIER BRIDGE 1A 1000V DB в производствеSingle PhaseStandard1kV1A1.1V @ 1A10µA @ 1000V-55°C ~ 150°C (TJ)Through Hole4-EDIP (0.321", 8.15mm)DB
Diodes Incorporated RECT BRIDGE GPP 200V 1A DF-M в производствеSingle PhaseStandard200V1A1.1V @ 1A10µA @ 200V-65°C ~ 150°C (TJ)Through Hole4-EDIP (0.300", 7.62mm)DFM
SMC Diode Solutions BRIDGE RECT 1PHASE 600V 3A KBP в производствеSingle PhaseStandard600V3A1.1V @ 3A5µA @ 600V-55°C ~ 150°C (TJ)Through Hole4-ESIPKBP
SMC Diode Solutions BRIDGE RECT 1PHASE 1KV 3A KBP в производствеSingle PhaseStandard1kV3A1.1V @ 3A5µA @ 1000V-55°C ~ 150°C (TJ)Through Hole4-ESIPKBP
Diodes Incorporated RECT BRIDGE GPP 100V 1A DF-M в производствеSingle PhaseStandard100V1A1.1V @ 1A10µA @ 100V-65°C ~ 150°C (TJ)Through Hole4-EDIP (0.300", 7.62mm)DFM
Diodes Incorporated RECT BRIDGE GPP 400V 1A DF-M в производствеSingle PhaseStandard400V1A1.1V @ 1A10µA @ 400V-65°C ~ 150°C (TJ)Through Hole4-EDIP (0.300", 7.62mm)DFM
Diodes Incorporated RECT BRIDGE GPP 600V 1A DF-M в производствеSingle PhaseStandard600V1A1.1V @ 1A10µA @ 600V-65°C ~ 150°C (TJ)Through Hole4-EDIP (0.300", 7.62mm)DFM
Diodes Incorporated RECT BRIDGE GPP 1000V 1A DF-M в производствеSingle PhaseStandard1kV1A1.1V @ 1A10µA @ 1000V-65°C ~ 150°C (TJ)Through Hole4-EDIP (0.300", 7.62mm)DFM
Vishay Semiconductor Diodes Division DIODE BRIDGE 0.9A 125V 6DIP в производствеSingle PhaseStandard125V900mA1V @ 900mA10µA @ 125V-40°C ~ 125°C (TJ)Through Hole4-EDIP (0.300", 7.62mm)DFM
Central Semiconductor Corp BRIDGE RECT 2A 40V 4SMDIP в производствеSingle PhaseSchottky40V2A450mV @ 2A70µA @ 40V-50°C ~ 125°C (TJ)SMD Поверхностный монтаж4-SMD, Gull Wing4-SMDIP
Diodes Incorporated RECT BRIDGE GPP 100V 2A KBP в производствеSingle PhaseStandard100V2A1.1V @ 2A5µA @ 100V-65°C ~ 150°C (TJ)Through Hole4-SIP, KBPKBP
Diodes Incorporated RECTIFIER BRIDGE GPP 50V 2A KBP в производствеSingle PhaseStandard50V2A1.1V @ 2A5µA @ 50V-65°C ~ 150°C (TJ)Through Hole4-SIP, KBPKBP
Diodes Incorporated RECT BRIDGE GPP 200V 2A KBP в производствеSingle PhaseStandard200V2A1.1V @ 2A5µA @ 200V-65°C ~ 150°C (TJ)Through Hole4-SIP, KBPKBP
Diodes Incorporated RECT BRIDGE GPP 400V 2A KBP в производствеSingle PhaseStandard400V2A1.1V @ 2A5µA @ 400V-65°C ~ 150°C (TJ)Through Hole4-SIP, KBPKBP
Vishay Semiconductor Diodes Division DIODE GPP 0.5A 600V MINI TO269AA в производствеSingle PhaseStandard600V500mA1V @ 400mA5µA @ 600V-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-269AA, 4-BESOPTO-269AA (MBS)
SMC Diode Solutions BRIDGE RECT 1PHASE 1KV 4A KBP в производствеSingle PhaseStandard1kV4A1.1V @ 4A5µA @ 1000V-55°C ~ 150°C (TJ)Through Hole4-ESIPKBP
Comchip Technology RECT BRIDGE GP 1000V 4A Z4-D в производствеSingle PhaseStandard1kV4A950mV @ 4A5µA @ 1000V-55°C ~ 175°C (TJ)SMD Поверхностный монтажZ4-DZ4-D
ON Semiconductor RECTIFIER BRIDGE 50V 1.5A 4-DIP в производствеSingle PhaseStandard50V1.5A1.1V @ 1A10µA @ 50V-55°C ~ 150°C (TJ)Through Hole4-EDIP (0.300", 7.62mm)4-DIP
Comchip Technology DIODE BRIDGE 2A 60V TO-269AA в производствеSingle PhaseSchottky60V2A700mV @ 2A500µA @ 60V-55°C ~ 125°C (TJ)SMD Поверхностный монтажTO-269AA, 4-BESOPMini-Dip (TO-269AA)
Diodes Incorporated RECT BRIDGE GPP 600V 2A KBP в производствеSingle PhaseStandard600V2A1.1V @ 2A5µA @ 600V-65°C ~ 150°C (TJ)Through Hole4-SIP, KBPKBP
Diodes Incorporated RECT BRIDGE GPP 600V 1.5A KBP в производствеSingle PhaseStandard600V1.5A1.1V @ 1.5A5µA @ 600V-65°C ~ 150°C (TJ)Through Hole4-SIP, KBPKBP
Micro Commercial Co RECTIFIER BRIDGE 1A 400V DB-1 в производствеSingle PhaseStandard400V1A1.1V @ 1A10µA @ 400V-55°C ~ 150°C (TJ)Through Hole4-EDIP (0.321", 8.15mm)DB-1
Comchip Technology RECT BRIDGE GPP 600V 2A DFS в производствеSingle PhaseStandard600V2A1.1V @ 2A10µA @ 600V-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-SMD, Gull WingDFS
Micro Commercial Co RECTIFIER BRIDGE 1A 50V DB-1 в производствеSingle PhaseStandard50V1A1.1V @ 1A10µA @ 50V-55°C ~ 150°C (TJ)Through Hole4-EDIP (0.321", 8.15mm)DB-1
Micro Commercial Co RECTIFIER BRIDGE 1A 100V DB-1 в производствеSingle PhaseStandard100V1A1.1V @ 1A10µA @ 100V-55°C ~ 150°C (TJ)Through Hole4-EDIP (0.321", 8.15mm)DB-1
Vishay Semiconductor Diodes Division DIODE GPP 1A 1000V 4DIP в производствеSingle PhaseStandard1kV1A1.1V @ 1A5µA @ 1000V-55°C ~ 150°C (TJ)Through Hole4-EDIP (0.300", 7.62mm)DFM
Micro Commercial Co RECTIFIER BRIDGE 1A 600V DB-1 в производствеSingle PhaseStandard600V1A1.1V @ 1A10µA @ 600V-55°C ~ 150°C (TJ)Through Hole4-EDIP (0.321", 8.15mm)DB-1
Comchip Technology RECT BRIDGE GPP 1000V 2A DFS в производствеSingle PhaseStandard1kV2A1.1V @ 2A10µA @ 1000V-55°C ~ 150°C (TJ)SMD Поверхностный монтаж4-SMD, Gull WingDFS
Vishay Semiconductor Diodes Division DIODE GPP 1A 600V 4DIP в производствеSingle PhaseStandard600V1A1.1V @ 1A5µA @ 600V-55°C ~ 150°C (TJ)Through Hole4-EDIP (0.300", 7.62mm)DFM
Diodes Incorporated RECT BRIDGE GPP 1000V 2A KBP в производствеSingle PhaseStandard1kV2A1.1V @ 2A5µA @ 1000V-65°C ~ 150°C (TJ)Through Hole4-SIP, KBPKBP
Diodes Incorporated RECT BRIDGE GPP 2A 800V KBP в производствеSingle PhaseStandard800V2A1.1V @ 2A5µA @ 800V-65°C ~ 150°C (TJ)Through Hole4-SIP, KBPKBP
Vishay Semiconductor Diodes Division DIODE BRIDGE 2A 800V 1PH WOG в производствеSingle PhaseStandard800V2A1.1V @ 2A5µA @ 800V-55°C ~ 150°C (TJ)Through Hole4-Circular, WOGWOG
Vishay Semiconductor Diodes Division RECTIFIER BRIDGE 1.5A 600V WOG в производствеSingle PhaseStandard600V1.5A1V @ 1A5µA @ 600V-55°C ~ 150°C (TJ)Through Hole4-Circular, WOGWOG
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