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Infineon Technologies |
IC DRIVER BRIDGE 3PHASE 44PLCC |
в производстве | Half-Bridge | 3-Phase | 6 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.2V | 250mA, 500mA | Inverting | 600V | 80ns, 35ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 44-LCC (J-Lead), 32 Leads | 44-PLCC, 32 Leads (16.58x16.58) |
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IXYS-RF |
15A 15V MOSFET DRIVER |
в производстве | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 8 V ~ 18 V | 0.8V, 3.5V | 15A, 15A | Non-Inverting | - | 4ns, 4ns | -40°C ~ 85°C | SMD Поверхностный монтаж | 6-SMD, Flat Leads | 6-SMD |
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Power Integrations |
IC DUAL GATE DRIVER 8A |
в производстве | High-Side or Low-Side | Independent | 2 | IGBT | 14.5 V ~ 15.5 V | - | 8A, 8A | - | 1200V | 17ns, 15ns | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | Module | Module |
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Power Integrations |
IC DUAL GATE DRIVER 8A |
в производстве | High-Side or Low-Side | Independent | 2 | IGBT | 14.5 V ~ 15.5 V | - | 8A, 8A | - | 1700V | 17ns, 15ns | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | Module | Module |
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Power Integrations |
IC DUAL GATE DRIVER |
в производстве | Half-Bridge | Independent | 2 | IGBT | 14.5 V ~ 15.5 V | - | 8A, 15A | - | 600V | 5ns, 10ns | -20°C ~ 85°C (TA) | SMD Поверхностный монтаж | Module | Module |
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Power Integrations |
IC DUAL GATE DRIVER |
в производстве | Half-Bridge | Independent | 2 | IGBT | 14.5 V ~ 15.5 V | - | 8A, 15A | - | 600V | 5ns, 10ns | -20°C ~ 85°C (TA) | SMD Поверхностный монтаж | Module | Module |
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Power Integrations |
IC DUAL GATE DRIVER |
в производстве | Half-Bridge | Independent | 2 | IGBT | 14.5 V ~ 15.5 V | - | 8A, 15A | - | 600V | 5ns, 10ns | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | Module | Module |
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Power Integrations |
IC DUAL GATE DRIVER |
в производстве | Half-Bridge | Independent | 2 | IGBT | 14.5 V ~ 15.5 V | - | 8A, 15A | - | 1200V | 5ns, 10ns | -20°C ~ 85°C (TA) | SMD Поверхностный монтаж | Module | Module |
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Power Integrations |
IC DUAL GATE DRIVER |
в производстве | Half-Bridge | Independent | 2 | IGBT | 14.5 V ~ 15.5 V | - | 8A, 15A | - | 1700V | 5ns, 10ns | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | Module | Module |
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Power Integrations |
IC DUAL GATE DRIVER |
в производстве | Half-Bridge | Independent | 2 | IGBT | 14.5 V ~ 15.5 V | - | 8A, 15A | - | 1200V | 5ns, 10ns | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | Module | Module |
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Power Integrations |
IC DUAL GATE DRIVER |
в производстве | Half-Bridge | Independent | 2 | IGBT | 14.5 V ~ 15.5 V | - | 8A, 15A | - | 1700V | 5ns, 10ns | -20°C ~ 85°C (TA) | SMD Поверхностный монтаж | Module | Module |
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Power Integrations |
GATE DRIVER CORE SCALE-2 4500V |
в производстве | High-Side or Low-Side | Single | 1 | IGBT | 14.5 V ~ 15.5 V | - | 50A, 50A | - | 4500V | 30ns, 25ns | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | Module | Module |
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Power Integrations |
IC DUAL GATE DRIVER 30A |
в производстве | Half-Bridge | - | 2 | IGBT | 14 V ~ 16 V | - | 30A, 30A | - | - | - | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | Module | Module |
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Power Integrations |
IC DUAL GATE DRIVER 30A |
в производстве | Half-Bridge | - | 2 | IGBT | 14 V ~ 16 V | - | 30A, 30A | - | - | - | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | Module | Module |
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Power Integrations |
IC DUAL GATE DRIVER 20A |
в производстве | Half-Bridge | Independent | 2 | IGBT | 14.5 V ~ 15.5 V | - | 20A, 20A | - | 1700V | 7ns, 25ns | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | Module | Module |
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Power Integrations |
IC DUAL GATE DRIVER 20A |
в производстве | Half-Bridge | Independent | 2 | IGBT | 14.5 V ~ 15.5 V | - | 20A, 20A | - | 1700V | 7ns, 25ns | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | Module | Module |
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Power Integrations |
IC DUAL GATE DRIVER 20A |
в производстве | Half-Bridge | Independent | 2 | IGBT | 14.5 V ~ 15.5 V | - | 20A, 20A | - | 1200V | 7ns, 25ns | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | Module | Module |
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Power Integrations |
IC DUAL GATE DRIVER 20A |
в производстве | Half-Bridge | Independent | 2 | IGBT | 14.5 V ~ 15.5 V | - | 20A, 20A | - | 1200V | 7ns, 25ns | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | Module | Module |
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Power Integrations |
IC DUAL GATE DRIVER 20A |
в производстве | Half-Bridge | Independent | 2 | IGBT | 14.5 V ~ 15.5 V | - | 20A, 20A | - | 1700V | 7ns, 25ns | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | Module | Module |
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Power Integrations |
IC SINGLE GATE DRIVER 35A |
в производстве | High-Side or Low-Side | Single | 1 | IGBT | 23.5 V ~ 26.5 V | - | 35A, 35A | - | 6500V | 9ns, 30ns | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | Module | Module |
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Diodes Incorporated |
IC GATE DRVR IGBT/MOSFET SOT23-6 |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 40V (Max) | - | 2A, 2A | Non-Inverting | - | 210ns, 240ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23-6 | SOT-26 |
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Silego Technology |
N-CHANNEL MOSFET DRIVERS WITH IN |
в производстве | High-Side | Single | 1 | N-Channel MOSFET | 4.75 V ~ 5.25 V | 0.4V, 5.5V | 32µA, 400µA | CMOS | - | - | -55°C ~ 125°C | SMD Поверхностный монтаж | 8-WFDFN Exposed Pad | 8-TDFN (2x2) |
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STMicroelectronics |
IC MOSFET DRIVER HIGH CURR 8SOIC |
устарелый | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 5 V ~ 12 V | 1V, 2.3V | 2A, 2A | Non-Inverting | 41V | - | 0°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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STMicroelectronics |
IC MOSFET DRIVER HI CURNT 8SOIC |
устарелый | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 5 V ~ 12 V | 1V, 2.3V | 2A, 2A | Non-Inverting | 41V | - | 0°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SO |
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ON Semiconductor |
IC MOSFET DVR SYNC VR12 8-SOIC |
в производстве | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.5 V ~ 13.2 V | 0.7V, 3.4V | - | Non-Inverting | 35V | 16ns, 11ns | 0°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC MOSFET DVR SYNC VR12 8-SOIC |
в производстве | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.5 V ~ 13.2 V | 0.7V, 3.4V | - | Non-Inverting | 35V | 16ns, 11ns | 0°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Diodes Incorporated |
IC GATE DVR IGBT/MOSFET SOT26 |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 25V (Max) | - | 10A, 10A | Non-Inverting | - | 48ns, 35ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23-6 | SOT-26 |
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Diodes Incorporated |
IC GATE HV DRIVER MSOP-10 |
в производстве | Half-Bridge | Single | 2 | N-Channel MOSFET | 8 V ~ 14 V | 0.8V, 2.4V | 1.5A, 2A | CMOS/TTL | 50V | 17ns, 12ns | -40°C ~ 125°C (TA) | SMD Поверхностный монтаж | 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) | 10-MSOP |
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Microchip Technology |
IC MOSFET DVR 0.5A SINGLE 2X2 QF |
в производстве | High-Side or Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 500mA, 500mA | Inverting | - | 40ns, 28ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 6-VDFN Exposed Pad | 6-DFN (2x2) |
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Microchip Technology |
IC MOSFET DVR 0.5A SINGLE 2X2 QF |
в производстве | High-Side or Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 500mA, 500mA | Non-Inverting | - | 40ns, 28ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 6-VDFN Exposed Pad | 6-DFN (2x2) |
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ON Semiconductor |
IC MOSFET DRIVER DUAL 12V 8-DFN |
в производстве | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.6 V ~ 13.2 V | 0.8V, 2V | - | Inverting, Non-Inverting | 35V | 20ns, 11ns | 0°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VFDFN Exposed Pad | 8-DFN (3x3) |
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ON Semiconductor |
IC MOSFET DRIVER DUAL 12V 8SOIC |
в производстве | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.6 V ~ 13.2 V | 0.8V, 2V | - | Inverting, Non-Inverting | 35V | 20ns, 11ns | 0°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC MOSFET DRIVER BUCK DUAL QFN |
в производстве | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.5 V ~ 13.2 V | 1V, 2V | - | Non-Inverting | 35V | 16ns, 11ns | 0°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VFDFN Exposed Pad | 8-DFN (3x3) |
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ON Semiconductor |
IC MOSFET DRIVER DUAL 12V 8SOIC |
в производстве | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4.6 V ~ 13.2 V | 0.8V, 2V | - | Inverting, Non-Inverting | 35V | 20ns, 11ns | -20°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Diodes Incorporated |
SYNCH MOSFET CONTROLLER SOT23 T |
в производстве | Low-Side | Synchronous | 1 | N-Channel MOSFET | 3.5 V ~ 40 V | - | 1.5A, 3A | - | - | 360ns, 210ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23-6 | SOT-26 |
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Microchip Technology |
IC POWER MOSFET DVR 1.5A SOT23-5 |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 20ns, 20ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SC-74A, SOT-753 | SOT-23-5 |
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Microchip Technology |
IC MOSFET DVR DUAL-INV 4A 8-MSOP |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 4A, 4A | Inverting | - | 15ns, 15ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-MSOP-EP |
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Microchip Technology |
IC MOSFET DVR HIGH-SIDE 4TQFN |
в производстве | High-Side | Single | 1 | N-Channel MOSFET | 2.7 V ~ 9 V | 0.8V, 3V | - | Non-Inverting | - | - | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 4-UDFN Exposed Pad, 4-TMLF® | 4-TQFN (1.2x1.2) |
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Microchip Technology |
IC DRIVER MOSFET 85V 8-SOIC |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 5.25 V ~ 16 V | 0.8V, 2.2V | 1.5A, 1A | Non-Inverting | - | 20ns, 20ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Diodes Incorporated |
IC GATE DRVR IGBT/MOSFET SOT23-6 |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 12V (Max) | - | 9A, 9A | Non-Inverting | - | 7.3ns, 11ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23-6 | SOT-23-6 |
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Microchip Technology |
IC DRIVER MOSFET 1.5A DUAL 8-MLF |
Discontinued at - | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 20 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting, Non-Inverting | - | 20ns, 18ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-VFDFN Exposed Pad, 8-MLF® | 8-MLF® (2x2) |
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Texas Instruments |
IC DUAL PERIPHERAL DRVR 8SO |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.75 V ~ 5.25 V | 0.8V, 2V | 500mA, 500mA | Non-Inverting | - | 5ns, 7ns | 0°C ~ 70°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.209", 5.30mm Width) | 8-SO |
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Texas Instruments |
IC DUAL PERIPHERAL DRVR 8SO |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.75 V ~ 5.25 V | 0.8V, 2V | 500mA, 500mA | Inverting | - | 5ns, 7ns | 0°C ~ 70°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.209", 5.30mm Width) | 8-SO |
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Microchip Technology |
IC MOSFET DVR 1.5A SINGLE SOT-23 |
в производстве | High-Side or Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 1.5A, 1.5A | Inverting | - | 11.5ns, 10ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | SOT-23-6 | SOT-23-6 |
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Microchip Technology |
IC MOSFET DVR 85V HALF BRDG |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 5.5 V ~ 16 V | 0.8V, 2.2V | 1A, 1A | Non-Inverting | 108V | 20ns, 20ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC DUAL PERIPHERAL DRVR 8-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.75 V ~ 5.25 V | 0.8V, 2V | 500mA, 500mA | Non-Inverting | - | 5ns, 7ns | 0°C ~ 70°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC DUAL PERIPHERAL DRVR 8-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.75 V ~ 5.25 V | 0.8V, 2V | 500mA, 500mA | Inverting | - | 5ns, 7ns | 0°C ~ 70°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC DUAL PERIPHERAL DRVR 8SO |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.75 V ~ 5.25 V | 0.8V, 2V | 500mA, 500mA | Inverting | - | 5ns, 7ns | 0°C ~ 70°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.209", 5.30mm Width) | 8-SO |
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Microchip Technology |
IC DRIVER MOSFET 85V 10-DFN |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 5.25 V ~ 16 V | 0.8V, 2.2V | 1.5A, 1A | Non-Inverting | - | 20ns, 20ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 10-UFDFN Exposed Pad | 10-TDFN (2.5x2.5) |
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Diodes Incorporated |
HVGATEDRIVERW-DFN3030-10 |
в производстве | - | - | - | - | - | - | - | - | - | - | - | SMD Поверхностный монтаж | 10-WFDFN Exposed Pad | W-DFN3030-10 |
