номер части Производитель / Марка Краткое описание Статус деталиТип транзистораТок - коллектор (Ic) (макс.)Напряжение - Разрыв эмиттера коллектора (макс.)Vce Saturation (Макс.) @ Ib, IcТок - отсечка коллектора (макс.)Постоянный ток постоянного тока (hFE) (мин.) @ Ic, VceМощность - макс.Частота - переходРабочая ТемператураТип монтажаУпаковка / чехолПакет устройств поставщика
STMicroelectronics TRANSISTOR PNP 400V 1A TO-92 в производствеPNP1A400V500mV @ 100mA, 500mA1mA16 @ 350mA, 5V1.5W
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150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA)TO-92
Diodes Incorporated TRANSISTOR NPN 150V 5A SOT-223 в производствеNPN5A150V355mV @ 500mA, 5A50nA (ICBO)100 @ 1A, 5V3W90MHz-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-261-4, TO-261AASOT-223
Diodes Incorporated TRANSISTOR NPN 60V 6A SOT-223 в производствеNPN6A60V375mV @ 300mA, 6A50nA (ICBO)100 @ 2A, 1V3W130MHz-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-261-4, TO-261AASOT-223
Diodes Incorporated TRANSISTOR PNP 40V 3A D-PAK в производствеPNP3A40V450mV @ 300mA, 3A20nA300 @ 10mA, 2V3.9W100MHz-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-252-3, DPak (2 Leads + Tab), SC-63TO-252-3
Diodes Incorporated TRANSISTOR NPN 45V 3A D-PAK в производствеNPN3A45V350mV @ 150mA, 3A20nA150 @ 2A, 2V3.9W
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-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-252-3, DPak (2 Leads + Tab), SC-63TO-252-3
Central Semiconductor Corp TRANSISTOR PNP 80V 0.5A TO92 в производствеPNP500mA80V250mV @ 10mA, 100mA100nA (ICBO)100 @ 100mA, 1V625mW50MHz-65°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA)TO-92
Diodes Incorporated TRANSISTOR PNP 60V 6A D-PAK в производствеPNP6A60V400mV @ 600mA, 6A20nA (ICBO)100 @ 2A, 1V4.2W120MHz-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-252-3, DPak (2 Leads + Tab), SC-63TO-252-3
ON Semiconductor TRANSISTOR NPN DARL 100V 8A D2PAK в производствеNPN - Darlington8A100V2.5V @ 80mA, 8A50µA1000 @ 3A, 4V80W
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150°C (TJ)SMD Поверхностный монтажTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263 (D2Pak)
ON Semiconductor TRANSISTOR NPN DARL 100V 5A TO220AB в производствеNPN - Darlington5A100V4V @ 20mA, 5A500µA1000 @ 3A, 3V2W
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-65°C ~ 150°C (TJ)Through HoleTO-220-3TO-220AB
ON Semiconductor TRANSISTOR PNP 60V 10A TO220AB в производствеPNP10A60V1V @ 400mA, 8A10µA40 @ 4A, 1V2W40MHz-55°C ~ 150°C (TJ)Through HoleTO-220-3TO-220AB
ON Semiconductor TRANSISTOR NPN 800V 3A TO-220 в производствеNPN3A800V2V @ 300mA, 1.5A10µA (ICBO)20 @ 200mA, 5V50W15MHz150°C (TJ)Through HoleTO-220-3TO-220-3
ON Semiconductor TRANSISTOR NPN 150V 8A TO220AB в производствеNPN8A150V500mV @ 100mA, 1A100µA20 @ 4A, 2V50W30MHz-65°C ~ 150°C (TJ)Through HoleTO-220-3TO-220AB
Central Semiconductor Corp TRANSISTOR NPN 40V 0.8A TO-18 в производствеNPN800mA40V1V @ 50mA, 500mA10nA (ICBO)100 @ 150mA, 10V500mW300MHz-65°C ~ 200°C (TJ)Through HoleTO-206AA, TO-18-3 Metal CanTO-18
Central Semiconductor Corp TRANSISTOR PNP 60V 0.6A TO-18 в производствеPNP600mA60V1.6V @ 50mA, 500mA10nA (ICBO)100 @ 150mA, 10V400mW200MHz-65°C ~ 200°C (TJ)Through HoleTO-206AA, TO-18-3 Metal CanTO-18
Central Semiconductor Corp TRANSISTOR PNP 60V 0.6A TO-39 в производствеPNP600mA60V1.6V @ 50mA, 500mA10nA (ICBO)100 @ 150mA, 10V600mW200MHz-65°C ~ 200°C (TJ)Through HoleTO-205AD, TO-39-3 Metal CanTO-39
Central Semiconductor Corp TRANSISTOR NPN 250V TO-39 в производствеNPN
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250V
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20µA (ICBO)40 @ 20mA, 10V
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15MHz-65°C ~ 200°C (TJ)Through HoleTO-205AD, TO-39-3 Metal CanTO-39
ON Semiconductor TRANSISTOR NPN 100V 25A TO247 в производствеNPN25A100V4V @ 5A, 25A1mA15 @ 15A, 4V125W3MHz-65°C ~ 150°C (TJ)Through HoleTO-247-3TO-247
ON Semiconductor TRANSISTOR PNP 100V 25A TO247 в производствеPNP25A100V4V @ 5A, 25A1mA15 @ 15A, 4V125W3MHz-65°C ~ 150°C (TJ)Through HoleTO-247-3TO-247
Sanken TRANSISTOR NPN 120V 7A TO3P в производствеNPN7A120V500mV @ 300mA, 3A100µA (ICBO)70 @ 3A, 4V70W30MHz150°C (TJ)Through HoleTO-3P-3, SC-65-3TO-3P
ON Semiconductor TRANSISTOR NPN 230V 15A TO247 в производствеNPN15A230V2V @ 1A, 10A50µA (ICBO)50 @ 7A, 5V200W30MHz-65°C ~ 150°C (TJ)Through HoleTO-247-3TO-247
ON Semiconductor TRANSISTOR PNP 230V 15A TO247 в производствеPNP15A230V2V @ 1A, 10A50µA (ICBO)50 @ 7A, 5V200W30MHz-65°C ~ 150°C (TJ)Through HoleTO-247-3TO-247
ON Semiconductor TRANSISTOR NPN 60V 15A TO3 в производствеNPN15A60V3V @ 3.3A, 10A700µA20 @ 4A, 4V115W2.5MHz-65°C ~ 200°C (TJ)Through HoleTO-204AA, TO-3TO-204 (TO-3)
ON Semiconductor TRANSISTOR NPN 260V 15A TO264 в производствеNPN15A260V3V @ 1A, 10A50µA (ICBO)75 @ 5A, 5V200W30MHz-65°C ~ 150°C (TJ)Through HoleTO-264-3, TO-264AATO-264
Sanken TRANSISTOR NPN 400V 18A TO3P в производствеNPN18A400V500mV @ 2A, 10A100µA (ICBO)10 @ 10A, 4V130W10MHz150°C (TJ)Through HoleTO-3P-3, SC-65-3TO-3P
ON Semiconductor TRANSISTOR NPN DARL 100V 20A TO247 в производствеNPN - Darlington20A100V3V @ 200mA, 20A1mA750 @ 10A, 3V160W4MHz-65°C ~ 150°C (TJ)Through HoleTO-247-3TO-247
ON Semiconductor TRANSISTOR PNP DARL 100V 20A TO247 в производствеPNP - Darlington20A100V3V @ 200mA, 20A1mA750 @ 10A, 3V160W4MHz-65°C ~ 150°C (TJ)Through HoleTO-247-3TO-247
ON Semiconductor TRANSISTOR NPN 140V 20A TO3 в производствеNPN20A140V1V @ 500mA, 5A250µA25 @ 5A, 2V250W2MHz-65°C ~ 200°C (TJ)Through HoleTO-204AA, TO-3TO-204 (TO-3)
ON Semiconductor TRANSISTOR NPN 800V 20A TO-264 в производствеNPN20A800V3V @ 2.75A, 11A1mA5.5 @ 11A, 5V200W
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150°C (TJ)Through HoleTO-264-3, TO-264AATO-264-3
ON Semiconductor TRANSISTOR PNP 250V 16A TO3 в производствеPNP16A250V4V @ 3.2A, 16A500µA15 @ 8A, 4V250W4MHz-65°C ~ 200°C (TJ)Through HoleTO-204AA, TO-3TO-204 (TO-3)
ON Semiconductor TRANSISTOR NPN 250V 16A TO3 в производствеNPN16A250V4V @ 3.2A, 16A500µA15 @ 8A, 4V250W4MHz-65°C ~ 200°C (TJ)Through HoleTO-204AA, TO-3TO-204 (TO-3)
STMicroelectronics TRANSISTOR NPN DARL 1200V 0.1A TO220 в производствеNPN - Darlington100mA1200V2V @ 500µA, 50mA100µA200 @ 30mA, 10V40W
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150°C (TJ)Through HoleTO-220-3TO-220AB
Diodes Incorporated TRANSISTOR NPN 100V 0.5A SOT23-3 в производствеNPN - Avalanche Mode500mA100V500mV @ 1mA, 10mA100nA (ICBO)25 @ 10mA, 10V330mW40MHz-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23-3
ON Semiconductor TRANSISTOR NPN DARL 120V 50A TO3 в производствеNPN - Darlington50A120V3.5V @ 500mA, 50A2mA1000 @ 25A, 5V300W
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-55°C ~ 200°C (TJ)Through HoleTO-204AETO-3
Microsemi Corporation TRANSISTOR PNP 60V 0.6A в производствеPNP600mA60V1.6V @ 50mA, 500mA50nA100 @ 150mA, 10V500mW
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-65°C ~ 200°C (TJ)SMD Поверхностный монтаж3-SMD, No LeadUB
Microsemi Corporation TRANSISTOR NPN 50V 0.8A 3PIN SMD в производствеNPN800mA50V1V @ 50mA, 500mA50nA100 @ 150mA, 10V500mW
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-65°C ~ 200°C (TJ)SMD Поверхностный монтаж3-SMD, No Lead3-SMD
Microsemi Corporation TRANSISTOR NPN 80V 1A UB в производствеNPN1A80V500mV @ 50mA, 500mA10µA (ICBO)50 @ 500mA, 10V500mW
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-65°C ~ 200°C (TJ)SMD Поверхностный монтаж3-SMD, No LeadUB
Microsemi Corporation TRANSISTOR NPN 80V 1A TO-5 в производствеNPN1A80V500mV @ 50mA, 500mA10µA (ICBO)50 @ 500mA, 10V800mW
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-65°C ~ 200°C (TJ)Through HoleTO-205AA, TO-5-3 Metal CanTO-5
M/A-Com Technology Solutions TRANSISTOR PNP 80V 2A TO39 в производствеPNP2A80V1.5V @ 500mA, 5A50µA70 @ 2.5A, 5V1W
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-65°C ~ 200°C (TJ)Through HoleTO-205AD, TO-39-3 Metal CanTO-39
ON Semiconductor TRANSISTOR NPN 65V 0.1A SOT-23 в производствеNPN100mA65V600mV @ 5mA, 100mA15nA (ICBO)200 @ 2mA, 5V300mW100MHz-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23-3 (TO-236)
ON Semiconductor TRANSISTOR PNP 65V 0.1A SOT-23 в производствеPNP100mA65V650mV @ 5mA, 100mA15nA (ICBO)220 @ 2mA, 5V300mW100MHz-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23-3 (TO-236)
Nexperia USA Inc. TRANSISTOR NPN 45V 0.1A SOT323 в производствеNPN100mA45V400mV @ 5mA, 100mA15nA (ICBO)200 @ 2mA, 5V200mW100MHz150°C (TJ)SMD Поверхностный монтажSC-70, SOT-323SOT-323-3
Nexperia USA Inc. TRANSISTOR NPN 45V 0.1A SOT323 в производствеNPN100mA45V400mV @ 5mA, 100mA15nA (ICBO)200 @ 2mA, 5V200mW100MHz150°C (TJ)SMD Поверхностный монтажSC-70, SOT-323SOT-323-3
ON Semiconductor TRANSISTOR NPN 30V 0.1A SOT-23 в производствеNPN100mA30V600mV @ 5mA, 100mA15nA (ICBO)200 @ 2mA, 5V300mW100MHz-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23-3 (TO-236)
ON Semiconductor TRANSISTOR PNP 45V 0.1A SOT23 в производствеPNP100mA45V650mV @ 5mA, 100mA15nA (ICBO)220 @ 2mA, 5V300mW100MHz-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23-3 (TO-236)
ON Semiconductor TRANSISTOR NPN 45V 0.1A SOT23 в производствеNPN100mA45V600mV @ 5mA, 100mA15nA (ICBO)110 @ 2mA, 5V300mW100MHz-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23-3 (TO-236)
ON Semiconductor TRANSISTOR PNP 65V 0.1A SOT23 в производствеPNP100mA65V650mV @ 5mA, 100mA15nA (ICBO)220 @ 2mA, 5V300mW100MHz-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23-3 (TO-236)
ON Semiconductor TRANSISTOR PNP 30V 0.1A SOT23 в производствеPNP100mA30V650mV @ 5mA, 100mA15nA (ICBO)220 @ 2mA, 5V300mW100MHz-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23-3 (TO-236)
ON Semiconductor TRANSISTOR PNP 65V 0.1A SOT23 в производствеPNP100mA65V650mV @ 5mA, 100mA15nA (ICBO)125 @ 2mA, 5V300mW100MHz-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23-3 (TO-236)
ON Semiconductor TRANSISTOR NPN 45V 0.1A SOT23 в производствеNPN100mA45V600mV @ 5mA, 100mA15nA (ICBO)420 @ 2mA, 5V225mW100MHz-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23-3 (TO-236)
ON Semiconductor TRANSISTOR NPN 30V 0.1A SOT23 в производствеNPN100mA30V600mV @ 5mA, 100mA15nA (ICBO)420 @ 2mA, 5V300mW100MHz-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23-3 (TO-236)
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