номер части Производитель / Марка Краткое описание Статус деталиТип транзистораТок - коллектор (Ic) (макс.)Напряжение - Разрыв эмиттера коллектора (макс.)Vce Saturation (Макс.) @ Ib, IcТок - отсечка коллектора (макс.)Постоянный ток постоянного тока (hFE) (мин.) @ Ic, VceМощность - макс.Частота - переходРабочая ТемператураТип монтажаУпаковка / чехолПакет устройств поставщика
Infineon Technologies TRANSISTOR NPN 45V 0.1A SOT-23 устарелыйNPN100mA45V550mV @ 1.25mA, 50mA20nA (ICBO)250 @ 2mA, 5V330mW250MHz150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23-3
Infineon Technologies TRANSISTOR NPN 45V 0.1A SOT-23 устарелыйNPN100mA45V550mV @ 1.25mA, 50mA20nA (ICBO)380 @ 2mA, 5V330mW250MHz150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23-3
ON Semiconductor TRANSISTOR PNP 150V 0.5A SOT23 в производствеPNP500mA150V500mV @ 5mA, 50mA50nA (ICBO)60 @ 10mA, 5V300mW300MHz-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23-3 (TO-236)
ON Semiconductor TRANSISTOR PNP DARL 30V 0.5A SOT23 в производствеPNP - Darlington500mA30V1.5V @ 100µA, 100mA100nA (ICBO)20000 @ 100mA, 5V225mW125MHz-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23-3 (TO-236)
ON Semiconductor TRANSISTOR NPN 60V 0.5A SOT23 в производствеNPN500mA60V250mV @ 10mA, 100mA100nA100 @ 100mA, 1V225mW100MHz-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23-3 (TO-236)
ON Semiconductor TRANSISTOR PNP DARL 30V 0.5A SOT23 в производствеPNP - Darlington500mA30V1.5V @ 100µA, 100mA100nA (ICBO)10000 @ 100mA, 5V225mW125MHz-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23-3 (TO-236)
ON Semiconductor TRANSISTOR NPN DARL 30V 0.3A SOT23 в производствеNPN - Darlington300mA30V1.5V @ 100µA, 100mA100nA (ICBO)20000 @ 100mA, 5V225mW125MHz-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23-3 (TO-236)
ON Semiconductor TRANSISTOR NPN 50V 0.15A TO-92 в производствеNPN150mA50V300mV @ 10mA, 100mA100nA (ICBO)120 @ 1mA, 6V250mW300MHz150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92-3
ON Semiconductor TRANSISTOR NPN 80V 0.1A SOT-23 в производствеNPN100mA80V200mV @ 15mA, 50mA100nA (ICBO)20 @ 10mA, 1V225mW60MHz-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23-3 (TO-236)
ON Semiconductor TRANSISTOR NPN 140V 0.6A TO-92 в производствеNPN600mA140V250mV @ 5mA, 50mA100nA (ICBO)60 @ 10mA, 5V625mW300MHz150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92-3
ON Semiconductor TRANSISTOR NPN 45V 0.2A SOT23 в производствеNPN200mA45V600mV @ 5mA, 100mA100nA500 @ 100µA, 5V225mW700MHz-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23-3 (TO-236)
ON Semiconductor TRANSISTOR PNP 40V 0.2A SOT23 устарелыйPNP200mA40V400mV @ 5mA, 50mA
-
100 @ 10mA, 1V350mW250MHz
-
SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23-3
ON Semiconductor TRANSISTOR NPN 65V 0.1A SOT-23 в производствеNPN100mA65V600mV @ 5mA, 100mA15nA (ICBO)420 @ 2mA, 5V310mW300MHz150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23-3
ON Semiconductor TRANSISTOR NPN 120V 0.05A SOT-23 в производствеNPN50mA120V300mV @ 1mA, 10mA50nA (ICBO)200 @ 1mA, 6V300mW110MHz150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23-3
ON Semiconductor TRANSISTOR PNP 65V 0.1A TO-92 в производствеPNP100mA65V650mV @ 5mA, 100mA15nA (ICBO)200 @ 2mA, 5V500mW150MHz150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92-3
ON Semiconductor TRANSISTOR PNP 40V 0.2A SOT-23 в производствеPNP200mA40V400mV @ 5mA, 50mA
-
100 @ 10mA, 1V300mW250MHz-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23-3 (TO-236)
Nexperia USA Inc. TRANSISTOR PNP 45V 0.1A SOT23 в производствеPNP100mA45V550mV @ 1.25mA, 50mA20nA (ICBO)250 @ 2mA, 5V250mW100MHz150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3TO-236AB (SOT23)
Nexperia USA Inc. TRANSISTOR PNP 45V 0.1A SOT23 в производствеPNP100mA45V550mV @ 1.25mA, 50mA20nA (ICBO)250 @ 2mA, 5V250mW100MHz150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3TO-236AB (SOT23)
Infineon Technologies TRANSISTOR PNP 60V 0.6A SOT-23 устарелыйPNP600mA60V1.6V @ 50mA, 500mA10nA (ICBO)100 @ 150mA, 10V330mW200MHz150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23-3
ON Semiconductor TRANSISTOR NPN DARL 40V 0.5A SOT23 в производствеNPN - Darlington500mA40V1.5V @ 500µA, 500mA1µA20000 @ 100mA, 5V225mW
-
-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23-3 (TO-236)
ON Semiconductor TRANSISTOR PNP 40V 0.6A SOT-23 устарелыйPNP600mA40V750mV @ 50mA, 500mA
-
100 @ 150mA, 2V350mW200MHz
-
SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23-3
ON Semiconductor TRANSISTOR PNP 45V 0.5A SOT23 в производствеPNP500mA45V620mV @ 50mA, 500mA100nA (ICBO)100 @ 100mA, 1V300mW
-
-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23-3 (TO-236)
ON Semiconductor TRANSISTOR NPN 45V 0.5A SOT23 в производствеNPN500mA45V620mV @ 50mA, 500mA100nA (ICBO)100 @ 100mA, 1V300mW
-
-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23-3 (TO-236)
ON Semiconductor TRANSISTOR PNP 100V 0.1A SOT-23 в производствеPNP100mA100V250mV @ 2.5mA, 25mA100nA (ICBO)30 @ 25mA, 1V225mW95MHz-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23-3 (TO-236)
ON Semiconductor TRANSISTOR PNP 120V 0.05A SOT-23 в производствеPNP50mA120V300mV @ 1mA, 10mA
-
300 @ 1mA, 6V300mW50MHz150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23-3
ON Semiconductor TRANSISTOR PNP 120V 0.05A TO92-3 в производствеPNP50mA120V300mV @ 1mA, 10mA1µA200 @ 1mA, 6V500mW100MHz150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92-3
ON Semiconductor TRANSISTOR NPN 25V 0.8A SOT-23 в производствеNPN800mA25V400mV @ 20mA, 500mA100nA (ICBO)160 @ 100mA, 1V200mW120MHz150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23-3
Diodes Incorporated TRANSISTOR NPN 300V 0.5A SOT23-3 в производствеNPN500mA300V500mV @ 2mA, 20mA100nA (ICBO)40 @ 30mA, 10V300mW50MHz-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23-3
Diodes Incorporated TRANSISTOR PNP 80V 0.5A SOT23-3 в производствеPNP500mA80V250mV @ 10mA, 100mA100nA (ICBO)100 @ 100mA, 1V300mW50MHz-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23-3
Diodes Incorporated TRANSISTOR PNP 60V 0.5A SOT23-3 в производствеPNP500mA60V250mV @ 10mA, 100mA100nA (ICBO)100 @ 100mA, 1V300mW50MHz-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23-3
Diodes Incorporated TRANSISTOR PNP 300V 0.5A SOT23-3 в производствеPNP500mA300V500mV @ 2mA, 20mA250nA (ICBO)25 @ 30mA, 10V300mW50MHz-55°C ~ 150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23-3
ON Semiconductor TRANSISTOR NPN 45V 0.1A TO-92 в производствеNPN100mA45V600mV @ 5mA, 100mA15nA (ICBO)420 @ 2mA, 5V500mW300MHz150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92-3
ON Semiconductor TRANSISTOR PNP 30V 0.1A TO-92 в производствеPNP100mA30V650mV @ 5mA, 100mA15nA (ICBO)200 @ 2mA, 5V500mW150MHz150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92-3
ON Semiconductor TRANSISTOR NPN 30V 0.1A TO-92 в производствеNPN100mA30V600mV @ 5mA, 100mA15nA (ICBO)200 @ 2mA, 5V500mW300MHz150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92-3
ON Semiconductor TRANSISTOR PNP 40V 0.2A TO-92 в производствеPNP200mA40V400mV @ 5mA, 50mA
-
100 @ 10mA, 1V625mW250MHz-55°C ~ 150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92-3
ON Semiconductor TRANSISTOR NPN 30V 0.1A TO-92 в производствеNPN100mA30V600mV @ 5mA, 100mA15nA (ICBO)420 @ 2mA, 5V500mW300MHz150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92-3
ON Semiconductor TRANSISTOR PNP 45V 0.1A TO-92 в производствеPNP100mA45V650mV @ 5mA, 100mA15nA (ICBO)200 @ 2mA, 5V500mW150MHz150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92-3
ON Semiconductor TRANSISTOR NPN 30V 0.1A TO-92 в производствеNPN100mA30V600mV @ 5mA, 100mA15nA (ICBO)420 @ 2mA, 5V500mW300MHz150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92-3
ON Semiconductor TRANSISTOR NPN 65V 0.1A TO-92 в производствеNPN100mA65V600mV @ 5mA, 100mA15nA (ICBO)420 @ 2mA, 5V500mW300MHz150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92-3
ON Semiconductor TRANSISTOR PNP 30V 0.1A TO-92 в производствеPNP100mA30V650mV @ 5mA, 100mA15nA (ICBO)420 @ 2mA, 5V500mW150MHz150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92-3
ON Semiconductor TRANSISTOR NPN 40V 0.6A SOT-23 устарелыйNPN600mA40V1V @ 50mA, 500mA10nA (ICBO)100 @ 150mA, 10V350mW300MHz
-
SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3SOT-23-3
ON Semiconductor TRANSISTOR PNP 30V 0.1A TO-92 в производствеPNP100mA30V650mV @ 5mA, 100mA15nA (ICBO)200 @ 2mA, 5V500mW150MHz150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92-3
Diodes Incorporated TRANSISTOR NPN 65V 0.1A X2-DFN1006-3 в производствеNPN100mA65V600mV @ 5mA, 100mA15nA200 @ 2mA, 5V410mW300MHz-55°C ~ 150°C (TJ)SMD Поверхностный монтаж3-XFDFNX2-DFN1006-3
Nexperia USA Inc. TRANSISTOR NPN 45V 0.1A SOT883 в производствеNPN100mA45V400mV @ 5mA, 100mA15nA (ICBO)420 @ 2mA, 5V250mW100MHz150°C (TJ)SMD Поверхностный монтажSC-101, SOT-883DFN1006-3
Nexperia USA Inc. TRANSISTOR NPN 80V 0.5A TO236AB в производствеNPN500mA80V250mV @ 10mA, 100mA50nA (ICBO)100 @ 100mA, 1V250mW100MHz150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3TO-236AB (SOT23)
Nexperia USA Inc. TRANSISTOR NPN 80V 0.5A TO236AB в производствеNPN500mA80V250mV @ 10mA, 100mA50nA (ICBO)100 @ 100mA, 1V250mW100MHz150°C (TJ)SMD Поверхностный монтажTO-236-3, SC-59, SOT-23-3TO-236AB (SOT23)
Nexperia USA Inc. TRANSISTOR NPN 40V 0.2A SOT883 в производствеNPN200mA40V300mV @ 5mA, 50mA50nA (ICBO)100 @ 10mA, 1V590mW300MHz150°C (TJ)SMD Поверхностный монтажSC-101, SOT-883DFN1006-3
ON Semiconductor TRANSISTOR PNP 45V 0.1A TO-92 в производствеPNP100mA45V650mV @ 5mA, 100mA15nA (ICBO)420 @ 2mA, 5V500mW150MHz150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92-3
ON Semiconductor TRANSISTOR PNP 50V 0.15A TO-92 в производствеPNP150mA50V300mV @ 10mA, 100mA100nA (ICBO)120 @ 2mA, 6V400mW80MHz150°C (TJ)Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)TO-92-3
Nexperia USA Inc. TRANSISTOR NPN 40V 0.6A SOT323-3 в производствеNPN600mA40V1V @ 50mA, 500mA10nA (ICBO)100 @ 150mA, 10V200mW300MHz150°C (TJ)SMD Поверхностный монтажSC-70, SOT-323SOT-323-3
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