номер части Производитель / Марка Краткое описание Статус деталиУправляемая конфигурацияТип каналаКоличество драйверовТип воротНапряжение - ПоставкаНапряжение логики - VIL, VIHТекущий - пиковый выход (источник, раковина)Тип вводаВысокое боковое напряжение - макс (бутстрап)Время нарастания / падения (Тип)Рабочая ТемператураТип монтажаУпаковка / чехолПакет устройств поставщика
Microchip Technology IC MOSFET DVR 0.5A SINGLE SOT-23 в производствеHigh-Side or Low-SideSingle1N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2V500mA, 500mAInverting
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40ns, 28ns-40°C ~ 150°C (TJ)SMD Поверхностный монтажSOT-23-6SOT-23
Microchip Technology IC MOSFET DVR 85V HALF BRDG в производствеHalf-BridgeIndependent2N-Channel MOSFET5.5 V ~ 16 V0.8V, 2.2V1A, 1ANon-Inverting108V20ns, 20ns-40°C ~ 125°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
Microchip Technology IC DRIVER MOSFET 1.5A DUAL 8SOIC в производствеLow-SideIndependent2N-Channel MOSFET4.5 V ~ 20 V0.8V, 2.4V1.5A, 1.5AInverting
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20ns, 18ns-40°C ~ 125°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width) Exposed Pad8-SOIC-EP
Microchip Technology IC DRIVER MOSFET 1.5A DUAL 8-MLF в производствеLow-SideIndependent2N-Channel MOSFET4.5 V ~ 20 V0.8V, 2.4V1.5A, 1.5AInverting
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20ns, 18ns-40°C ~ 125°C (TJ)SMD Поверхностный монтаж8-VFDFN Exposed Pad, 8-MLF®8-MLF® (2x2)
Microchip Technology IC DRIVER MOSFET 1.5A DUAL 8MSOP в производствеLow-SideIndependent2N-Channel MOSFET4.5 V ~ 20 V0.8V, 2.4V1.5A, 1.5AInverting
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20ns, 18ns-40°C ~ 125°C (TJ)SMD Поверхностный монтаж8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad8-MSOP-EP
Microchip Technology IC DRIVER MOSFET 1.5A DUAL 8SOIC в производствеLow-SideIndependent2N-Channel MOSFET4.5 V ~ 20 V0.8V, 2.4V1.5A, 1.5ANon-Inverting
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20ns, 18ns-40°C ~ 125°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width) Exposed Pad8-SOIC-EP
Microchip Technology IC MOSFET DVR 85V HALF BRDG в производствеHalf-BridgeIndependent2N-Channel MOSFET5.5 V ~ 16 V0.8V, 2.2V1A, 1ANon-Inverting108V20ns, 20ns-40°C ~ 125°C (TJ)SMD Поверхностный монтаж10-UFDFN Exposed Pad10-TDFN (2.5x2.5)
Microchip Technology IC MOSFET DVR 85V HALF BRDG Discontinued at -Half-BridgeIndependent2N-Channel MOSFET5.5 V ~ 16 V0.8V, 2.2V1A, 1ANon-Inverting108V20ns, 20ns-40°C ~ 125°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
Microchip Technology IC MOSFET DVR 1.5A DUAL HS 8DFN в производствеLow-SideIndependent2N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2.4V1.5A, 1.5AInverting
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19ns, 19ns-40°C ~ 150°C (TJ)SMD Поверхностный монтаж8-VDFN Exposed Pad8-DFN-S (6x5)
Microchip Technology IC MOSFET DVR 1.5A DUAL HS 8DFN в производствеLow-SideIndependent2N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2.4V1.5A, 1.5AInverting
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19ns, 19ns-40°C ~ 150°C (TJ)SMD Поверхностный монтаж8-VDFN Exposed Pad8-DFN-S (6x5)
Microchip Technology IC DRIVER MOSFET 1.5A DUAL 8SOIC в производствеLow-SideIndependent2N-Channel MOSFET4.5 V ~ 20 V0.8V, 2.4V1.5A, 1.5AInverting, Non-Inverting
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20ns, 18ns-40°C ~ 125°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width) Exposed Pad8-SOIC-EP
Microchip Technology IC MOSFET DVR 1.5A DUAL 8MSOP в производствеLow-SideIndependent2N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2V1.5A, 1.5AInverting
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11.5ns, 10ns-40°C ~ 150°C (TJ)SMD Поверхностный монтаж8-TSSOP, 8-MSOP (0.118", 3.00mm Width)8-MSOP
Microchip Technology IC MOSFET DVR 1.5A DUAL 8MSOP в производствеLow-SideIndependent2N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2V1.5A, 1.5AInverting, Non-Inverting
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11.5ns, 10ns-40°C ~ 150°C (TJ)SMD Поверхностный монтаж8-TSSOP, 8-MSOP (0.118", 3.00mm Width)8-MSOP
Microchip Technology IC MOSFET DVR 1.5A DUAL 8SOIC в производствеLow-SideIndependent2N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2V1.5A, 1.5AInverting, Non-Inverting
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11.5ns, 10ns-40°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
Microchip Technology IC MOSFET DVR 1.5A DUAL 8SOIC в производствеLow-SideIndependent2N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2V1.5A, 1.5AInverting, Non-Inverting
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11.5ns, 10ns-40°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
Microchip Technology IC DRIVER MOSFET 1.5A DUAL 8MSOP в производствеLow-SideIndependent2N-Channel MOSFET4.5 V ~ 20 V0.8V, 2.4V1.5A, 1.5AInverting, Non-Inverting
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20ns, 18ns-40°C ~ 125°C (TJ)SMD Поверхностный монтаж8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad8-MSOP-EP
Microchip Technology IC MOSFET DVR 1.5A DUAL 8TDFN в производствеLow-SideIndependent2N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2V1.5A, 1.5AInverting
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11.5ns, 10ns-40°C ~ 150°C (TJ)SMD Поверхностный монтаж8-WFDFN Exposed Pad8-TDFN (2x3)
Microchip Technology IC MOSFET DVR 1.5A DUAL 8SOIC в производствеLow-SideIndependent2N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2V1.5A, 1.5AInverting
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11.5ns, 10ns-40°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
Microchip Technology IC MOSFET DVR 1.5A DUAL 8TDFN в производствеLow-SideIndependent2N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2V1.5A, 1.5ANon-Inverting
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11.5ns, 10ns-40°C ~ 150°C (TJ)SMD Поверхностный монтаж8-WFDFN Exposed Pad8-TDFN (2x3)
Microchip Technology IC MOSFET DVR 1.5A DUAL 8MSOP в производствеLow-SideIndependent2N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2V1.5A, 1.5ANon-Inverting
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11.5ns, 10ns-40°C ~ 150°C (TJ)SMD Поверхностный монтаж8-TSSOP, 8-MSOP (0.118", 3.00mm Width)8-MSOP
Microchip Technology IC MOSFET DVR 1.5A DUAL 8SOIC в производствеLow-SideIndependent2N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2V1.5A, 1.5ANon-Inverting
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11.5ns, 10ns-40°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
Microchip Technology IC MOSFET DVR 1.5A DUAL 8TDFN в производствеLow-SideIndependent2N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2V1.5A, 1.5AInverting, Non-Inverting
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11.5ns, 10ns-40°C ~ 150°C (TJ)SMD Поверхностный монтаж8-WFDFN Exposed Pad8-TDFN (2x3)
Microchip Technology IC MOSFET DVR 1.5A DUAL 8SOIC в производствеLow-SideIndependent2N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2V1.5A, 1.5AInverting
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11.5ns, 10ns-40°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
Microchip Technology IC MOSFET DRIVER 6A HS 8-MSOP в производствеLow-SideSingle1N-Channel MOSFET4.5 V ~ 13.2 V1.607V, 1.615V6A, 6AInverting
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10ns, 10ns-40°C ~ 125°C (TJ)SMD Поверхностный монтаж8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad8-MSOP-EP
Microchip Technology IC MOSFET DRVR 6A NON INV 8-MSOP в производствеLow-SideSingle1P-Channel MOSFET4.5 V ~ 13.2 V1.607V, 1.615V6A, 6ANon-Inverting
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10ns, 10ns-40°C ~ 125°C (TJ)SMD Поверхностный монтаж8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad8-MSOP-EP
Microchip Technology IC MOSFET DRIVER HI SPEED 8SOIC в производствеHalf-BridgeIndependent2N-Channel, P-Channel MOSFET4.5 V ~ 13 V0.8V, 1.5V2A, 2ANon-Inverting
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10ns, 10ns-20°C ~ 125°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
Microchip Technology IC MOSFET DVR 1.5A DUAL HS 8DFN в производствеLow-SideIndependent2N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2.4V1.5A, 1.5ANon-Inverting
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19ns, 19ns-40°C ~ 150°C (TJ)SMD Поверхностный монтаж8-VDFN Exposed Pad8-DFN-S (6x5)
Microchip Technology IC MOSFET DVR 1.5A DUAL HS 8DFN в производствеLow-SideIndependent2N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2.4V1.5A, 1.5AInverting, Non-Inverting
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25ns, 25ns-40°C ~ 150°C (TJ)SMD Поверхностный монтаж8-VDFN Exposed Pad8-DFN-S (6x5)
Microchip Technology IC MOSFET DVR 1.5A DUAL HS 8DFN в производствеLow-SideIndependent2N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2.4V1.5A, 1.5AInverting
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19ns, 19ns-40°C ~ 150°C (TJ)SMD Поверхностный монтаж8-VDFN Exposed Pad8-DFN-S (6x5)
Microchip Technology IC MOSFET DVR 1.5A DUAL HS 8DFN в производствеLow-SideIndependent2N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2.4V1.5A, 1.5AInverting, Non-Inverting
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19ns, 19ns-40°C ~ 150°C (TJ)SMD Поверхностный монтаж8-VDFN Exposed Pad8-DFN-S (6x5)
Microchip Technology IC MOSFET DVR 1.5A DUAL HS 8DFN в производствеLow-SideIndependent2N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2.4V1.5A, 1.5AInverting, Non-Inverting
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19ns, 19ns-40°C ~ 150°C (TJ)SMD Поверхностный монтаж8-VDFN Exposed Pad8-DFN-S (6x5)
Microchip Technology IC MOSFET DVR 1.5A DUAL HS 8DFN в производствеLow-SideIndependent2N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2.4V1.5A, 1.5AInverting
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19ns, 19ns-40°C ~ 150°C (TJ)SMD Поверхностный монтаж8-VDFN Exposed Pad8-DFN-S (6x5)
Microchip Technology IC MOSFET DVR 1.5A DUAL HS 8DFN в производствеLow-SideIndependent2N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2.4V1.5A, 1.5ANon-Inverting
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19ns, 19ns-40°C ~ 150°C (TJ)SMD Поверхностный монтаж8-VDFN Exposed Pad8-DFN-S (6x5)
Microchip Technology IC MOSFET DVR 1.5A DUAL HS 8DFN в производствеLow-SideIndependent2N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2.4V1.5A, 1.5AInverting, Non-Inverting
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25ns, 25ns-40°C ~ 150°C (TJ)SMD Поверхностный монтаж8-VDFN Exposed Pad8-DFN-S (6x5)
Microchip Technology IC MOSFET DRIVER 4.5A 8MSOP в производствеLow-SideSingle1N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2V4.5A, 4.5ANon-Inverting
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9.5ns, 9ns-40°C ~ 150°C (TJ)SMD Поверхностный монтаж8-TSSOP, 8-MSOP (0.118", 3.00mm Width)8-MSOP
Microchip Technology IC MOSFET DVR 1.2A DUAL HS 8DIP в производствеLow-SideIndependent2N-Channel, P-Channel MOSFET4.5 V ~ 16 V0.8V, 3V1.2A, 1.2AInverting, Non-Inverting
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35ns, 25ns0°C ~ 70°C (TA)Through Hole8-DIP (0.300", 7.62mm)8-PDIP
Microchip Technology IC MOSFET DRIVER 4.5A 8MSOP в производствеLow-SideSingle1N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2V4.5A, 4.5AInverting
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9.5ns, 9ns-40°C ~ 150°C (TJ)SMD Поверхностный монтаж8-TSSOP, 8-MSOP (0.118", 3.00mm Width)8-MSOP
Microchip Technology IC MOSFET DRIVER 4.5A 8SOIC в производствеLow-SideSingle1N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2V4.5A, 4.5AInverting
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9.5ns, 9ns-40°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
Microchip Technology IC MOSFET DRIVER 4.5A 8MSOP в производствеLow-SideSingle1N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2V4.5A, 4.5ANon-Inverting
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9.5ns, 9ns-40°C ~ 150°C (TJ)SMD Поверхностный монтаж8-TSSOP, 8-MSOP (0.118", 3.00mm Width)8-MSOP
Microchip Technology IC MOSFET DRIVER 4.5A 8SOIC в производствеLow-SideSingle1N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2V4.5A, 4.5ANon-Inverting
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9.5ns, 9ns-40°C ~ 150°C (TJ)SMD Поверхностный монтаж8-SOIC (0.154", 3.90mm Width)8-SOIC
Microchip Technology IC MOSFET DRIVER 6A HS 8DFN в производствеLow-SideSingle1IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2.4V6A, 6ANon-Inverting
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20ns, 20ns-40°C ~ 150°C (TJ)SMD Поверхностный монтаж8-VDFN Exposed Pad8-DFN-S (6x5)
Microchip Technology IC MOSFET DRIVER 6A HS 8DFN в производствеLow-SideSingle1IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2.4V6A, 6AInverting
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20ns, 20ns-40°C ~ 150°C (TJ)SMD Поверхностный монтаж8-VDFN Exposed Pad8-DFN-S (6x5)
Microchip Technology IC DRIVER MOSFET 3A DUAL 16-SOIC в производствеLow-SideIndependent2N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2.4V3A, 3AInverting
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28ns, 32ns0°C ~ 150°C (TJ)SMD Поверхностный монтаж16-SOIC (0.295", 7.50mm Width)16-SOIC
Microchip Technology IC MOSFET DRIVER 6A INV 8-MSOP в производствеLow-SideSingle1N-Channel MOSFET4.5 V ~ 13.2 V1.607V, 1.615V6A, 6AInverting
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10ns, 10ns-40°C ~ 125°C (TJ)SMD Поверхностный монтаж8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad8-MSOP-EP
Microchip Technology IC MOSFET DVR 1.5A DUAL HS 8DFN в производствеLow-SideIndependent2N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2.4V1.5A, 1.5ANon-Inverting
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19ns, 19ns-40°C ~ 150°C (TJ)SMD Поверхностный монтаж8-VDFN Exposed Pad8-DFN-S (6x5)
Microchip Technology IC MOSFET DVR 1.5A DUAL HS 8DFN в производствеLow-SideIndependent2N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2.4V1.5A, 1.5AInverting, Non-Inverting
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25ns, 25ns-40°C ~ 150°C (TJ)SMD Поверхностный монтаж8-VDFN Exposed Pad8-DFN-S (6x5)
Microchip Technology IC MOSFET DVR 1.5A DUAL HS 8DFN в производствеLow-SideIndependent2N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2.4V1.5A, 1.5AInverting, Non-Inverting
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19ns, 19ns-40°C ~ 150°C (TJ)SMD Поверхностный монтаж8-VDFN Exposed Pad8-DFN-S (6x5)
Microchip Technology IC MOSFET DVR 1.5A DUAL HS 8DFN в производствеLow-SideIndependent2N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2.4V1.5A, 1.5AInverting, Non-Inverting
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19ns, 19ns-40°C ~ 150°C (TJ)SMD Поверхностный монтаж8-VDFN Exposed Pad8-DFN-S (6x5)
Microchip Technology IC MOSFET DVR 1.5A DUAL HS 8DFN в производствеLow-SideIndependent2N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2.4V1.5A, 1.5ANon-Inverting
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19ns, 19ns-40°C ~ 150°C (TJ)SMD Поверхностный монтаж8-VDFN Exposed Pad8-DFN-S (6x5)
Microchip Technology IC MOSFET DVR 1.5A DUAL HS 8DFN в производствеLow-SideIndependent2N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2.4V1.5A, 1.5AInverting, Non-Inverting
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25ns, 25ns-40°C ~ 150°C (TJ)SMD Поверхностный монтаж8-VDFN Exposed Pad8-DFN-S (6x5)
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