|
|
Microchip Technology |
IC DRIVER MOSFET 9A LS 8-SOIC |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 9A, 9A | Non-Inverting | - | 20ns, 24ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Microchip Technology |
IC DRIVER MOSFET 9A LS 8-SOIC |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 9A, 9A | Non-Inverting | - | 20ns, 24ns | 0°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Microchip Technology |
IC MOSFET DVR DUAL-NON 4A 8-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 4A, 4A | Non-Inverting | - | 15ns, 15ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Microchip Technology |
IC DRIVER MOSFET 9A LS 8-DIP |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 9A, 9A | Non-Inverting | - | 20ns, 24ns | 0°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
Microchip Technology |
IC DRIVER MOSFET 9A LS 8-DIP |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 9A, 9A | Inverting | - | 20ns, 24ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
Microchip Technology |
IC MOSFET DVR 3A DUAL HS 8-DIP |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 3A, 3A | Inverting | - | 23ns, 25ns | 0°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
Microchip Technology |
IC MOSFET DVR 3A DUAL HS 8-DIP |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 3A, 3A | Inverting, Non-Inverting | - | 23ns, 25ns | 0°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
Microchip Technology |
IC DRIVER MOSF LO SIDE HS 8-SOIC |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 11 V ~ 50 V | 0.8V, 2V | - | Non-Inverting | - | 700ns, 500ns | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Microchip Technology |
IC MOSFET DVR 3A DUAL HS 16-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 3A, 3A | Non-Inverting | - | 23ns, 25ns | 0°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
|
|
Microchip Technology |
IC MOSFET DRIVER 30V 1.5A 8-SOIC |
в производстве | High-Side or Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 30 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting | - | 25ns, 33ns | 0°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Microchip Technology |
IC MOSFET DVR 1.5A DUAL OD 8SOIC |
в производстве | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 40ns, 40ns (Max) | 0°C ~ 70°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Microchip Technology |
IC MOSFET DVR 1.5A DUAL 8-SOIC |
в производстве | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 40ns, 40ns (Max) | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Microchip Technology |
IC MOSFET DRIVER 9A INV 8DIP |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 9A, 9A | Inverting | - | 60ns, 60ns | 0°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
Microchip Technology |
IC MOSFET DVR 1.5A DUAL OD 8-DIP |
в производстве | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting | - | 40ns, 40ns (Max) | -40°C ~ 85°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
Microchip Technology |
IC RELAY DRIVER 16SOIC |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 10 V ~ 450 V | - | - | Non-Inverting | - | 30ns, 30ns | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 16-SOIC (0.154", 3.90mm Width), 14 Leads | 16-SOIC |
|
|
Microchip Technology |
IC MOSFET DRIVER 6A HS 8CDIP |
в производстве | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 6A, 6A | Non-Inverting | - | 25ns, 25ns | -55°C ~ 150°C (TJ) | Through Hole | 8-CDIP (0.300", 7.62mm) | 8-CERDIP |
|
|
Microchip Technology |
IC MOSFET DVR 6A 8DFN |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 6A, 6A | Non-Inverting | - | 20ns, 20ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VDFN Exposed Pad | 8-DFN-S (6x5) |
|
|
Microchip Technology |
IC DRIVER MOSFET 1.5A DUAL 8SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting | - | 20ns, 29ns | 0°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Microchip Technology |
IC DRIVER MOSFET DUAL 1.5A 8-DIP |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 20ns, 29ns | 0°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
Microchip Technology |
IC MOSFET DVR .5A HS 8SOIC |
в производстве | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 16 V | 0.8V, 2V | 500mA, 500mA | Non-Inverting | - | 25ns, 25ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Microchip Technology |
IC DRIVER MOSFET 6A LO SIDE 8DIP |
в производстве | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 6A, 6A | Non-Inverting | - | 12ns, 13ns | 0°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
Microchip Technology |
IC MOSFET DVR 600V HALF 14SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.2V | 1A, 1A | Non-Inverting | 600V | 31ns, 31ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 14-SOIC (0.154", 3.90mm Width) | 14-SOIC |
|
|
Microchip Technology |
IC DRIVER MOSFET 9A LS 8-SOIC |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 3V | 9A, 9A | Inverting | - | 20ns, 24ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Microchip Technology |
IC DRIVER MOSFET 9A LS 8-SOIC |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 9A, 9A | Inverting | - | 20ns, 24ns | 0°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Microchip Technology |
IC MOSFET DRIVER 3A 8DIP |
в производстве | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 3A, 3A | Inverting, Non-Inverting | - | 25ns, 25ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
Microchip Technology |
IC MOSFET DVR 12A HS 8DIP |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 13A, 13A | Inverting | - | 30ns, 32ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
Microchip Technology |
IC DRIVER MOSFET 6A LS TO-220-5 |
в производстве | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 6A, 6A | Non-Inverting | - | 12ns, 13ns | 0°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
|
|
Microchip Technology |
IC DRIVER MOSFET 3A DUAL 8DIP |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 3A, 3A | Inverting | - | 28ns, 32ns | 0°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
Microchip Technology |
IC DRIVER MOSFET 3A DUAL 16-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 3A, 3A | Non-Inverting | - | 28ns, 32ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
|
|
Microchip Technology |
IC MOSFET DVR 3A DUAL HS 16-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 3A, 3A | Inverting | - | 23ns, 25ns | 0°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
|
|
Microchip Technology |
IC MOSFET DRIVER 9A INV TO220-5 |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 9A, 9A | Inverting | - | 60ns, 60ns | 0°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
|
|
Microchip Technology |
IC DRIVER MOSF QUAD 1.2A 14DIP |
в производстве | Low-Side | Independent | 4 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.2A, 1.2A | Inverting, Non-Inverting | - | 14ns, 13ns | -40°C ~ 85°C (TA) | Through Hole | 14-DIP (0.300", 7.62mm) | 14-DIP |
|
|
Microchip Technology |
IC MOSFET DVR 1.5A DUAL HS 8CDIP |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 30ns, 30ns | -55°C ~ 125°C (TA) | Through Hole | 8-CDIP (0.300", 7.62mm) | 8-CERDIP |
|
|
Microchip Technology |
IC MOSFET DVR 1.5A DUAL HS 8CDIP |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting | - | 30ns, 30ns | -55°C ~ 125°C (TA) | Through Hole | 8-CDIP (0.300", 7.62mm) | 8-CERDIP |
|
|
Microchip Technology |
IC MOSFET DVR 85V HALF BRDG |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 5.5 V ~ 16 V | 0.8V, 2.2V | 1A, 1A | Non-Inverting | 108V | 20ns, 20ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Microchip Technology |
IC DRIVER MOSFET 1.5A DUAL 8MSOP |
в производстве | Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 20 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting | - | 20ns, 18ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-MSOP-EP |
|
|
Microchip Technology |
IC MOSFET DVR 1.5A DUAL 8MSOP |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 1.5A, 1.5A | Inverting | - | 11.5ns, 10ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-MSOP |
|
|
Microchip Technology |
IC MOSFET DVR 1.5A DUAL 8MSOP |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 1.5A, 1.5A | Inverting, Non-Inverting | - | 11.5ns, 10ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | 8-MSOP |
|
|
Microchip Technology |
IC MOSFET DVR 85V HALF BRDG |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 5.5 V ~ 16 V | 0.8V, 2.2V | 1A, 1A | Non-Inverting | 108V | 20ns, 20ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Microchip Technology |
IC DRIVER MOSFET 85V 10-DFN |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 5.25 V ~ 16 V | 0.8V, 2.2V | 1.5A, 1A | Non-Inverting | - | 20ns, 20ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 10-UFDFN Exposed Pad | 10-TDFN (2.5x2.5) |
|
|
Microchip Technology |
IC MOSFET DVR 1A HS 8SOIC |
в производстве | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 16 V | 0.8V, 2V | 1A, 1A | Non-Inverting | - | 25ns, 25ns | 0°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Microchip Technology |
IC MOSFET DRIVER 6A 8SOIC |
в производстве | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 6A, 6A | Non-Inverting | - | 10ns, 10ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Microchip Technology |
IC MOSFET DVR 1A HS 8DIP |
в производстве | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 16 V | 0.8V, 2V | 1A, 1A | Non-Inverting | - | 25ns, 25ns | 0°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
Microchip Technology |
IC MOSFET DVR 1.5A DUAL HS 8-DIP |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting | - | 25ns, 25ns | 0°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
|
|
Microchip Technology |
4.5A MATCHED HIGH -SPEED LOW-S |
в производстве | Low-Side | Single | 2 | IGBT | 4.5 V ~ 18 V | 0.8V, 2V | 4.5A, 4.5A | Non-Inverting | - | 12ns, 12ns | -40°C ~ 125°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Microchip Technology |
4.5A MATCHED HIGH -SPEED LOW-S |
в производстве | Low-Side | Single | 2 | IGBT | 4.5 V ~ 18 V | 0.8V, 2V | 4.5A, 4.5A | Inverting, Non-Inverting | - | 12ns, 12ns | -40°C ~ 125°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Microchip Technology |
IC MOSFET DVR 1A HS INV 8SOIC |
в производстве | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 16 V | 0.8V, 2V | 1A, 1A | Inverting | - | 25ns, 25ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
|
Microchip Technology |
IC MOSFET DVR 1.5A DUAL HS 8DFN |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting | - | 25ns, 25ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-VDFN Exposed Pad | 8-DFN-S (6x5) |
|
|
Microchip Technology |
4.5A MATCHED HIGH -SPEED LOW-S |
в производстве | Low-Side | Single | 2 | IGBT | 4.5 V ~ 18 V | 0.8V, 2V | 4.5A, 4.5A | Inverting | - | 12ns, 12ns | -40°C ~ 125°C (TA) | SMD Поверхностный монтаж | 8-WFDFN Exposed Pad | 8-TDFN (2x3) |
|
|
Microchip Technology |
4.5A MATCHED HIGH -SPEED LOW-S |
в производстве | Low-Side | Single | 2 | IGBT | 4.5 V ~ 18 V | 0.8V, 2V | 4.5A, 4.5A | Non-Inverting | - | 12ns, 12ns | -40°C ~ 125°C (TA) | SMD Поверхностный монтаж | 8-WFDFN Exposed Pad | 8-TDFN (2x3) |
