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Microchip Technology |
IC DRIVER MOSF HI SIDE HS 8-SOIC |
в производстве | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 12 V ~ 36 V | 0.8V, 2V | - | Non-Inverting | - | 400ns, 400ns | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 8DIP |
в производстве | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 3V | 210mA, 360mA | Non-Inverting | 600V | 100ns, 50ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Renesas Electronics America Inc. |
IC DVR HS DUAL MOSFET 8-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 15 V | 0.8V, 2.4V | 2A, 2A | Inverting | - | 7.5ns, 10ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DRIVER HALF BRIDGE 600V 8SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 1.9A, 2.3A | Inverting, Non-Inverting | 600V | 40ns, 20ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC DRIVER PRE FET 6 CHAN 28-SSOP |
в производстве | Low-Side | Independent | 6 | N-Channel MOSFET | 4.5 V ~ 5.5 V | - | 1.2mA, 1.2mA | Non-Inverting | - | 3.5µs, 3µs | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 28-SSOP (0.209", 5.30mm Width) | 28-SSOP |
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IXYS Integrated Circuits Division |
MOSFET DVR ULT FAST 14A 8-DIP |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 14A, 14A | Non-Inverting | - | 25ns, 18ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
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Microchip Technology |
IC MOSFET DRIVER 30V 1.5A 8-SOIC |
в производстве | High-Side or Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 30 V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 25ns, 33ns | 0°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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pSemi |
HIGH-SPEED FET DRIVER 33 MHZ |
в производстве | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4 V ~ 5.5 V | - | 2A, 4A | - | 100V | 2.5ns, 2.5ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | Die | Die |
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Renesas Electronics America Inc. |
IC MOSFET DRIVER DUAL POWER 8-SOIC |
в производстве | High-Side or Low-Side | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 15 V | 0.8V, 2V | - | Inverting | - | 20ns, 20ns | 0°C ~ 70°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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NXP USA Inc. |
IC H-BRIDGE PRE-DRIVER 20SOIC |
в производстве | Half-Bridge | Independent | 4 | N-Channel MOSFET | 5.5 V ~ 28 V | 0.8V, 2V | 1A, 1A | Non-Inverting | 55V | 80ns, 80ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 20-SOIC (0.295", 7.50mm Width) | 20-SOIC |
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Infineon Technologies |
IC HIGH SIDE DRIVER SGL 8-DIP |
в производстве | High-Side | Single | 1 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 6V, 9.5V | 250mA, 500mA | Non-Inverting | 600V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Maxim Integrated |
IC MOSFET DRV DUAL NONINV 8-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 20ns, 20ns | 0°C ~ 70°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC MOSFET DRIVER 30V 1.5A 8-SOIC |
в производстве | High-Side or Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 30 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting | - | 25ns, 33ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC MOSFET DRIVER 30V 1.5A 8-SOIC |
в производстве | High-Side or Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 30 V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 25ns, 33ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC MOSFET DVR SYNC 4.5A HS 8SOIC |
в производстве | Half-Bridge | Synchronous | 2 | N-Channel MOSFET | 4 V ~ 6.85 V | - | 3A, 4.5A | Non-Inverting | 33V | 17ns, 12ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC RELAY DRIVER 16SOIC |
в производстве | Low-Side | Single | 1 | N-Channel MOSFET | 10 V ~ 450 V | - | - | Non-Inverting | - | 30ns, 30ns | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 16-SOIC (0.154", 3.90mm Width), 14 Leads | 16-SOIC |
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Maxim Integrated |
IC DRIVER MOSFET DUAL POWER 8-DIP |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 17 V | 0.8V, 2V | - | Inverting | - | 20ns, 20ns | 0°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Infineon Technologies |
IC DRIVER HI/LO SIDE 600V 8-DIP |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 4A, 4A | Non-Inverting | 600V | 22ns, 18ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Infineon Technologies |
IC DRIVER HALF BRIDGE 8DIP |
в производстве | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.9V | 200mA, 350mA | Non-Inverting | 600V | 150ns, 50ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Texas Instruments |
IC GATE DVR HI/LO 600V 4A 14SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 18 V | 1.2V, 2.7V | 4A, 4A | Non-Inverting | 600V | 15ns, 15ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 14-SOIC (0.154", 3.90mm Width) | 14-SOIC |
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IXYS Integrated Circuits Division |
IC GATE DVR 4A INV 8-SOIC |
в производстве | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 4A, 4A | Inverting | - | 9ns, 8ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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Infineon Technologies |
IC DRIVER HALF-BRIDGE 8-DIP |
в производстве | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 8.3V, 12.6V | 250mA, 500mA | Non-Inverting | 600V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Infineon Technologies |
IC DRIVER HALF-BRIDGE 14-SOIC |
в производстве | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 1.9A, 2.3A | Non-Inverting | 600V | 40ns, 20ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 14-SOIC (0.154", 3.90mm Width) | 14-SOIC |
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Maxim Integrated |
IC MOSFET DRV DUAL NONINV 8-SOIC |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 20ns, 20ns | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DRIVER 1CHAN HV 600V 8SOIC |
в производстве | High-Side or Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 9 V ~ 20 V | 0.8V, 3V | 250mA, 500mA | Non-Inverting | 600V | 80ns, 40ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC MOSFET DRVR SGL HS 9A 8-SOIC |
в производстве | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4 V ~ 15 V | 1.1V, 2.7V | 9A, 9A | Non-Inverting | - | 20ns, 20ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC DRVR HALF BRDG 100V 2A 8-SOIC |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 9 V ~ 14 V | 2.3V, - | 2A, 2A | Non-Inverting | 118V | 570ns, 430ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC DRIVER MOSF W/LOSS PROT 8SOIC |
в производстве | High-Side | Single | 1 | N-Channel MOSFET | 7 V ~ 26 V | 1.5V, 3.5V | - | Non-Inverting | - | - | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Texas Instruments |
IC MOSFET DRVR SGL HS 9A 8-DIP |
в производстве | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4 V ~ 15 V | 1.1V, 2.7V | 9A, 9A | Inverting | - | 20ns, 20ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Texas Instruments |
IC MOSFET DRVR SGL HS 9A 8-DIP |
в производстве | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4 V ~ 15 V | 1.1V, 2.7V | 9A, 9A | Non-Inverting | - | 20ns, 20ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Texas Instruments |
IC GATE DRIVER HALF BRIDGE 10SON |
устарелый | Half-Bridge | Independent | 2 | N-Channel MOSFET | 4.5 V ~ 5.5 V | 1.76V, 1.89V | 1.2A, 5A | Non-Inverting | 107V | 7ns, 1.5ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 10-WDFN Exposed Pad | 10-WSON (4x4) |
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Infineon Technologies |
IC DVR HALF BRIDGE 8-DIP |
в производстве | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 1.9A, 2.3A | Non-Inverting | 600V | 40ns, 20ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Texas Instruments |
IC MOSFET DRVR SGL HS 9A 8-MSOP |
в производстве | Low-Side | Single | 1 | N-Channel, P-Channel MOSFET | 4 V ~ 15 V | 1V, 2V | 9A, 9A | Inverting | - | 20ns, 20ns | -55°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-MSOP-PowerPad |
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Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 16SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 6V, 9.5V | 3A, 3A | Non-Inverting | 200V | 10ns, 15ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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Texas Instruments |
IC DVR HALF-BRIDGE HV 8SOPWRPAD |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 9 V ~ 14 V | 2.3V, - | 3A, 3A | Non-Inverting | 118V | 430ns, 260ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-PowerSOIC (0.154", 3.90mm Width) | 8-SO PowerPad |
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Texas Instruments |
IC DVR HALF-BRIDGE HV 8-SOIC |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 9 V ~ 14 V | 2.3V, - | 3A, 3A | Non-Inverting | 118V | 430ns, 260ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC MOSFET DVR HI/LO SIDE 14-DIP |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 6V, 9.5V | 250mA, 500mA | Non-Inverting | 600V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | 14-DIP |
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Infineon Technologies |
IC MOSFET DRVR HI/LO SIDE 16SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 6V, 9.5V | 250mA, 500mA | Non-Inverting | 600V | 80ns, 40ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 8SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.7V | 1.9A, 2.3A | Non-Inverting | 600V | 40ns, 20ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 8DIP |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.7V | 1.9A, 2.3A | Non-Inverting | 600V | 40ns, 20ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 8-DIP |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 10 V ~ 20 V | 0.7V, 2.2V | 1A, 1A | Inverting | 200V | 35ns, 20ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Infineon Technologies |
IC DRIVER HALF BRIDGE 8DIP |
в производстве | Half-Bridge | Synchronous | 2 | IGBT, N-Channel MOSFET | 5 V ~ 20 V | 0.8V, 2.9V | 200mA, 350mA | Non-Inverting | 600V | 130ns, 50ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Maxim Integrated |
IC MOSFET DRVR DUAL NONINV 8-DIP |
в производстве | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 20ns, 20ns | 0°C ~ 70°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Microchip Technology |
IC DRIVR MOSF 12A LOSIDE TO220-5 |
в производстве | Low-Side | Single | 1 | IGBT, N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 12A, 12A | Non-Inverting | - | 20ns, 24ns | 0°C ~ 70°C (TA) | Through Hole | TO-220-5 | TO-220-5 |
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Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 14DIP |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 6V, 9.5V | 3A, 3A | Non-Inverting | 200V | 10ns, 15ns | -40°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | 14-DIP |
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Linear Technology/Analog Devices |
IC HIGH-SIDE DVR HS HV 8-MSOP |
в производстве | High-Side | Single | 1 | N-Channel MOSFET | 4 V ~ 15 V | 1.3V, 1.6V | 2.4A, 2.4A | Non-Inverting | 80V | 10ns, 7ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-MSOP-EP |
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Microchip Technology |
IC DRIVER MOSF QUAD 1.2A 16SOIC |
в производстве | Low-Side | Independent | 4 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.2A, 1.2A | Inverting, Non-Inverting | - | 14ns, 13ns | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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Microchip Technology |
IC DRIVER MOSF QUAD 1.2A 16-SOIC |
в производстве | Low-Side | Independent | 4 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.2A, 1.2A | Non-Inverting | - | 14ns, 13ns | -40°C ~ 85°C (TA) | SMD Поверхностный монтаж | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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Linear Technology/Analog Devices |
IC MOSFET DRIVER N-CH 8-MSOP |
в производстве | Half-Bridge | Independent | 2 | N-Channel MOSFET | 7.2 V ~ 13.5 V | 1.85V, 3.25V | 2.5A, 3A | Non-Inverting | 114V | 8ns, 5ns | -40°C ~ 125°C (TJ) | SMD Поверхностный монтаж | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-MSOP-EP |
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Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 14SOIC |
в производстве | Half-Bridge | Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.7V | 1.9A, 2.3A | Non-Inverting | 600V | 40ns, 20ns | -40°C ~ 150°C (TJ) | SMD Поверхностный монтаж | 14-SOIC (0.154", 3.90mm Width) | 14-SOIC |
